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2MBI300N-060-04 IGBT Module

600V / 300A 2 in one-package

Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure

Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Equivalent Circuit Schematic
· Industrial machines, such as Welding machines
C2E1

Maximum ratings and characteristics C1 E2


Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Collector-Emitter voltage VCES 600 V ¤ ¤

Gate-Emitter voltage VGES ±20 V


Collector Continuous IC 300 A
current 1ms IC pulse 600 A
G1 E1 G2 E2
-I C 300 A ¤ Current control circuit
1ms -IC pulse 600 A
Max. power dissipation PC W VCE(sat) classification
1100
Operating temperature Tj +150 °C Rank Lenge Conditions
Storage temperature Tstg -40 to +125 °C F 1.85 to 2.10V
Isolation voltage Vis AC 2500 (1min.) V A 2.00 to 2.25V Ic = 300A
Screw torque Mounting *1 3.5 N·m B 2.15 to 2.40V VGE = 15V
Terminals *1 3.5 N·m C 2.30 to 2.60V Tj = 25°C
*1 : Recommendable value : 2.5 to 3.5 N·m(M5) D 2.50 to 2.80V
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES – – 2.0 VGE=0V, VCE=600V mA
Gate-Emitter leakage current IGES – – 30 VCE=0V, VGE=±20V µA
Gate-Emitter threshold voltage VGE(th) 4.5 – 7.5 VCE=20V, IC=300mA V
Collector-Emitter saturation voltage VCE(sat) – – 2.8 VGE=15V, IC=300A V
Input capacitance Cies – 19800 – VGE=0V pF
Output capacitance Coes – 4400 – VCE=10V
Reverse transfer capacitance Cres – 2000 – f=1MHz
Turn-on time ton – 0.6 1.2 VCC=300V µs
tr – 0.2 0.6 IC=300A
Turn-off time toff – 0.6 1.0 VGE=±15V
tf – 0.2 0.35 RG=6.8ohm
Diode forward on voltage VF – – 3.0 IF=300A, VGE=0V V
Reverse recovery time trr – – 0.3 IF=300A µs

Thermal resistance characteristics


Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c) – – 0.11 IGBT °C/W
Thermal resistance Rth(j-c) – – 0.24 Diode °C/W
Rth(c-f)*2 – 0.025 – the base to cooling fin °C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI300N-060-04 IGBT Module

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C

700 700

600 600

500 500
Collector current : Ic [A]

Collector current : Ic [A]


400 400

300 300

200 200

100 100

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage


Tj=25°C Tj=125°C

10 10
VCE [V]

VCE [V]

8 8
Collector-Emitter voltage :

Collector-Emitter voltage :

6 6

4 4

2 2

0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current Switching time vs. Collector current
Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=25°C Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=125°C

1000 1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]

100 100

10 10
0 100 200 300 400 500 0 100 200 300 400 500

Collector current : Ic [A] Collector current : Ic [A]


2MBI300N-060-04 IGBT Module

Switching time vs. RG Dynamic input characteristics


Vcc=300V, Ic=300A, VGE=±15V, Tj=25°C Tj=25°C
500 25

1000
400
Switching time : ton, tr, toff, tf [n sec.]

20

Collector-Emitter voltage : VCE [V]

Gate-Emitter voltage : VGE [V]


300 15

100 200 10

100 5

10 0 0
1 2 10 20 0 500 1000 1500
Gate resistance : RG [ohm] Gate charge : Qg [nC]

Forward current vs. Forward voltage Reverse recovery characteristics


VGE=0V trr, Irr, vs. IF
500

700

600
Reverse recovery time : trr [n sec.]
Reverse recovery current : Irr [A]

500
Forward current : IF [A]

400
100

300

50
200

100

0
0 1 2 3 4 0 100 200 300 400 500

Forward voltage : VF [V] Forward current : IF [A]

Reversed biased safe operating area


Transient thermal resistance +VGE=15V, -VGE <= 15V, Tj < > 6.8 ohm
= 125°C, RG =
3000

2500
Thermal resistance : Rth (j-c) [°C/W]

Collector current : Ic [A]

2000
0.1

1500

1000

0.01 500

0
0.001 0.01 0.1 1 0 100 200 300 400 500 600
Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V]
2MBI300N-060-04 IGBT Module

Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage


Vcc=300V, RG=6.8 ohm, VGE=±15V Tj=25°C
30 100
Switching loss : Eon, Eoff, Err [mJ/cycle]

25

Capacitance : Cies, Coes, Cres [nF]


20

10

15

10

5 1

0
0 100 200 300 400 500 0 5 10 15 20 25 30 35
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]

Outline Drawings, mm

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