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PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
30 20mΩ 7A G : GATE
D : DRAIN
S : SOURCE
1 OCT-14-2002
NIKO-SEM Dual N-Channel Enhancement Mode P07D03LV
Field Effect Transistor SOP-8
VGS = 10V, ID = 7A 18 25
1
Forward Transconductance gfs VDS = 15V, ID = 5A 16 S
DYNAMIC
Input Capacitance Ciss 830
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 185 pF
Reverse Transfer Capacitance Crss 80
Total Gate Charge2 Qg 9 13
Gate-Source Charge 2
Qgs VDS = 0.5V(BR)DSS, VGS = 5V, 2.8 nC
Gate-Drain Charge2 Qgd ID = 7A 3.1
2
Turn-On Delay Time td(on) 5.7
Rise Time2 tr VDS = 15V 10
2
nS
Turn-Off Delay Time td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω 18
Fall Time2 tf 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current IS 3
A
Pulsed Current3 ISM 6
Forward Voltage1 VSD IF = 1A, VGS = 0V 1 V
Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / µS 15.5 nS
Reverse Recovery Charge Qrr 7.9 nC
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
2 OCT-14-2002
NIKO-SEM Dual N-Channel Enhancement Mode P07D03LV
Field Effect Transistor SOP-8
3 OCT-14-2002
NIKO-SEM Dual N-Channel Enhancement Mode P07D03LV
Field Effect Transistor SOP-8
4 OCT-14-2002
NIKO-SEM Dual N-Channel Enhancement Mode P07D03LV
Field Effect Transistor SOP-8
mm mm
Dimension Dimension
Min. Typ. Max. Min. Typ. Max.
E 1.27 L
5 OCT-14-2002