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SHINDENGEN

HVX-2 Series Power MOSFET N-Channel Enhancement type

2SK2671 OUTLINE DIMENSIONS


Case : FTO-220
( F5F90HVX2 ) (Unit : mm)

900V 5A

FEATURES
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.

APPLICATION
Switching power supply of AC 240V input
High voltage power supply
Inverter

RATINGS
œAbsolute Maximum Ratings iTc = 25Žj
Item Symbol Conditions Ratings Unit
Storage Temperature T stg -55`150 Ž
Channel Temperature T ch 150
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS }30
Continuous Drain CurrentiDCj ID 5
Continuous Drain CurrentiPeak) I DP Pulse width…10Ês, Duty cycle…1/100 10 A
Continuous Source CurrentiDCj IS 5
Total Power Dissipation PT 40 W
Repetitive Avalanche Current I AR T ch = 150Ž 5 A
Single Avalanche Energy EAS T ch = 25Ž 100 mJ
Repetitive Avalanche Energy EAR T ch = 25Ž 10
Dielectric Strength Vdis Terminals to case,@AC 1 minute 2 kV
Mounting Torque TOR i Recommended torque F0.3 N¥m j 0.5 N¥m

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd


HVX-2 Series Power MOSFET 2SK2671 ( F5F90HVX2 )

œElectrical Characteristics Tc = 25Ž


Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS I D = 1mA, VGS = 0V 900 V
Zero Gate Voltage Drain Current I DSS VDS = 900V, VGS = 0V 250 ÊA
Gate-Source Leakage Current I GSS VGS = }30V, VDS = 0V }0. 1
Forward Transconductance gfs I D = 2. 5A, VDS = 10V 2. 4 4. 0 S
Static Drain-Source On-state Resistance RDS(ON) I D = 2.5A, VGS = 10V 2. 1 2. 8 ¶
Gate Threshold Voltage VTH I D = 1mA, VDS = 10V 2. 5 3. 0 3. 5 V
Source-Drain Diode Forward Voltage VSD I S = 2.5A, VGS = 0V 1. 5
Thermal Resistance Æjc junction to case 3. 12 Ž/L
Total Gate Charge Qg VDD = 400V, VGS = 10V, I D = 5A 45 nC
Input Capacitance Ciss 1140
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1MHZ 23 pF
Output Capacitance C oss 105
Turn-On Time ton I D = 2. 5A, RL = 60¶, VGS = 10V 55 100 ns
Turn-Off Time toff 210 350

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd


2SK2671 Transfer Characteristics
10
Tc = −55°C
25°C

8
Drain Current ID [A]

6 100°C

150°C
4

VDS = 25V
TYP
0
0 5 10 15 20

Gate-Source Voltage VGS [V]


2SK2671 Static Drain-Source On-state Resistance
100
Static Drain-Source On-state Resistance RDS(ON) [Ω]

10

ID = 2.5A

VGS = 10V
pulse test
TYP
0.1
-50 0 50 100 150
Case Temperature Tc [°C]
2SK2671 Gate Threshold Voltage
6

5
Gate Threshold Voltage VTH [V]

1
VDS = 10V
ID = 1mA
TYP
0
-50 0 50 100 150

Case Temperature Tc [°C]


2SK2671 Safe Operating Area
10

100µs

200µs

1
Drain Current ID [A]

R DS(ON) 1ms
limit

10ms
0.1

DC

Tc = 25°C
Single Pulse

0.01
1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2671 Transient Thermal Impedance

10

0.1

Transient Thermal Impedance θjc(t) [°C/W]


0.01
10-4 10-3 10-2 10-1 100 101 102

Time t [s]
2SK2671 Single Avalanche Energy Derating
100
Single Avalanche Energy Derating [%]

80

60

40

20

0
0 50 100 150
Starting Channel Temperature Tch [°C]
2SK2671 Capacitance
10000

Ciss
1000
Capacitance Ciss Coss Crss [pF]

Coss
100

Crss

10

f=1MHz
Ta=25°C
TYP
1
0 20 40 60 80 100

Drain-Source Voltage VDS [V]


2SK2671 Single Avalanche Current - Inductive Load

10
VDD = 100V
VGS = 15V → 0V
Rg = 60Ω
IAS = 5A

EAR = 10mJ EAS = 100mJ

Single Avalanche Current IAS [A]


1
0.1 1 10 100

Inductance L [mH]
2SK2671 Power Derating
100

80
Power Derating [%]

60

40

20

0
0 50 100 150
Case Temperature Tc [°C]
2SK2671 Gate Charge Characteristics
500 20

VDS
400
Drain-Source Voltage VDS [V]

Gate-Source Voltage VGS [V]


VGS 15
VDD = 400V
200V
300
100V

10

200

5
100
ID = 5A
TYP

0 0
0 20 40 60 80 100

Gate Charge Qg [nC]


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