• Design of high-density chips require a

packing density as high as possible.

MOSFET Scaling and
Small Geometry Effects
• Transistors fabricated have sizes as
small as possible.
• The systematic reduction in the
dimensions of devices is referred to
as MOSFET scaling.
• It causes change in MOSFET
operational characteristics.
• There are physical limitations to the
extent of scaling.

• Geometric ratios found in larger Reduction of min feature size for a

devices are usually preserved. typical CMOS gate array process:
• It results in total area reduction
• Hence gives increased overall Year 1985 1987 1989 1991 1993 1995 1997 1999
functional density of the chip.
Feature 2.5 1.7 1.2 1.0 0.8 0.5 0.35 0.25
• Full Scaling: Constant field scaling Size (µm)
• Constant voltage scaling
• Scaling factor S>1
• Scaled device dimensions = larger S ranges from 1.2 to 1.5 for every successive
device dimensions divided by S generations.

•Full Scaling :

*Aims at preserving the magnitude of

internal electric fields in the
MOSFET.
*For this, all potentials must be
scaled by same scaling factor.
*Affects the threshold voltage.
*So, the charge densities must be
increased in the same proportion.

1

• Significant power reduction is most
attractive feature of full scaling.
• However power density per unit area
remains unchanged.
The influence of full scaling on
C-V characteristics of MOSFET:
(Assumed that mobility is not affected significantly by scaling)
• Constant voltage scaling:
*Peripheral and interfacing circuitry may
require certain voltage levels and hence full
scaling is not advisable.
*Constant voltage scaling is preferred here.
*All dimensions of MOSFET are scaled.
However, the power supply voltage and the
terminal voltages remain unchanged.
*To preserve the charge-field relations, doping
densities must be increased.
2
Short Channel Effects
Short Channel Device:
Channel length ≈ Depletion region thickness
OR
Effective channel length ≈ Source / Drain junction Depth

Attributes:

1. Limitations imposed on electron drift

characteristics in the channel
2. Modification of threshold voltage due to the
shortening of channel length