T25xxxH

STANDARD TRIACS

FEATURES

• Ir(RMS) = 25A

• VORM = 400V to SOOV

• High surge current capability

DESCRIPTION

The T25xxxH series of triaes uses a high performance MESA GLASS technology. These parts are intended for general purpose switching and phase control applications.

T0220 non-insulated (Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit
IT(RMs) RMS on-state current Te=SO°C 25 A
(3600 conduction angle)
IrSM Non repetitive surge peak on-state current tp =S.3 ms 262 A
(Tj initial = 25°C) tp = 10 ms 250
12t 12t Value for fusing tp = 10 ms 312 A2s
dl/dt Critical rate of rise of on-state current Repetitive 10 A/)lS
IG = 500mA dio Idt = 1 N)lS. F = 50Hz
Non 50
Repetitive
T5t9 Storage and operating junction temperature range - 40, + 150 °C
Tj - 40, +125
TI Maxirrum lead temperature for soldering during 10s at 260 °C
4.5mm from case Symbol Parameter Voltage Unit
D M S N
VDRM Repetitive peak off-state voltage 400 600 700 SOO V
VRRM Tj = 125°C January 1995

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II 7929237 0074b57 9T9 ..

T25xxxH

THERMAL RESISTANCES

Symbol Parameter Value Unit
RthO-a) Junction to ambient 60 °CIW
RthO-c) Junction to case for O.C 2 °CIW
RthO-c) Junction to case for A.C 360° conduction angle (F=50Hz) 1.5 °CIW GATE CHARACTERISTICS (maximum values)

PG (AV):: 1 W PGM:: 10 W (tp:: 20115) IGM :: 4 A (tp = 20 us)

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Quadrant Sensitivity Unit
12 13
IGT VD=12V (~C) RL=33Q. n- 25°C 1-11-111 MAX 50 50 mA
IV MAX 50 75
VGT VD=12V (~C) RL=33Q. Ti= 25°C HI-Ill-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kn Tj= 125°C 1-1I-11l-IV MIN 0.2 V
tgt VD=VDRM IG= 500mA n- 25°C 1-1I-1il-IV TYP 2 115
IT = 35A
dlGldt = 3A1~s
IH * IT= 250 rnA Gate open Tj:: 25°C MAX 50 75 rnA
IL 1<3= 1.21GT n- 25°C I-Ill-IV TYP 50 75 rnA
II TYP 100 150
VTM * ITM= 35A tp= 380115 n- 25°C MAX 1.5 V
IDRM VD =VDRM Tj= 25°C MAX 10 ~A
IRRM VR =VRRM
Tj= 110°C MAX 3 rnA
dV/dt* VO=67%VDRM Tj= 110°C MIN 500 V/~
Gate open
(dV/dt)c* (dl/dt)c = 11 Alms Tj= 1100C MIN 5 10 V/~ * For either polarity of electrode A2 voltage with reference to electrode Al

ORDERING INFORMATION

CURRENT

25

T

12 M H

T L PACKAGE:

H :: T0220 Non-insulated

SENSITIVITY ~--~.- VOLTAGE

T

TRIAC MESA GLASS ~

_2/_5 LyL~~;~: __

1m 7929237 0074658 835 ..

T25xxxH

Fig.1 : Maximum RMS power dissipation versus RMS on-state current.

P(W}

~r--.--'--'--'--'--'---'--'--'--'

30 ~t--+----I----I--::-+---f---t---::I 25f--..:....r-__:_.,=.-+--!---f-::--t-..:=::..~::+-7'f--i 2Of---+---;--+--!:---f-.::!"""Ioo::--~~£_+--i

2.5 5 7.5 10 12.5 15 17.5 20 22.5 25

Fig.3: RMSon-statecurrentversuscasetemperature.

25


1,\
01. = 1800 \
\
i\
Tcase('C) i\ 20

15

10

5

00 10 20 30 40 50 60 70 80 90 100110120130

Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.

Igt[T1l Ih[T1l

Igt[TJ=25 aC] l;;-:-h[;;TJ;'-,=2~5"'a=c]

2.6 2.4 2.2 2.0

1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4

-40 -20 0 20 40 60 80 100 120 140



I, i
" 19t
,
<, "-
Ih ~ r-,
""' ,
,
~
--.... 1'"-0..
TJ(oC) r--. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (T amb and Tcase) for different thermal resistances heatsink+ contact.

Tease COC)

p (W)

~,---.---.---.--,,---,---,---.I

3Or---~--+---,_--~--tr 25r---~~+-~'_~~~~~~--~1

90

20f---+--~~~~~~Y+r--+---f1

80

15 f---+--+--...p.IC"""""-"k- ........ ~r--+---f 1 00 10r---+---+---'_---P~~~-+---f 110

5r---+---+---'_---r---T~~----f 120

140

Tamb rC)

00 20 40

60

80 100

Fig.4 : Relative variation of thermal impedance versus pulse duration.

ZthlRth 1

0.1

,
'/ "'"'
Zlh(j·c)
I-' /
:
Zlh(j·a
:
r'
I I
I Ip(s)
... 0.01 1E-3

1E-2

1E-1

1E+O 1E+1 1E+25E+2

Fig.6 : Non repetitive surge peak on-state current versus number of cycles.

ITS ",A)

250

200

ITj ini~ial ~ ~~b I
- I
!
I
~ I
f- I
............ ....... r.-
io-
Number of cycles 150

100

50

o 1

100

1000

10

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T25xxxH

Fig.8 : On-state characteristics (maximum values).

Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width: t s 1 Oms, and corresponding value of ft.

I TSM(A). I't (A's) 1000

,ITj i~itiai = ~5dC

r-....... I
-....... ITSM
-. r-.....
- ~
1'1 -.... ........
~
r- i' i'
I
I (ms) 100

Tj initial
25°C ~ /
~
" Tj max
III I
Tj max,:
Vto =O,93V
Rt -001350
.'
VTM(V) 10

10

10 0 .5 1

1.5 2 2.5 3 3.5 4 4.5

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------- ---------~----------------- -----

----- ----- - ---------

T25xxxH

PACKAGEMECHANCALDATA T0220 Non-insulated (Plastic)

DIMENSIONS
REF. Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
A 10.3 0.406
A H B
G ~ ~ 6.3 6.5 0.248 0.256
" 1"1 C 9.1 0.358
..
I I f ~ B D 12.7 0.500

.. ~ '--
F 4.2 0.165
C G 3.0 0.118
0 Ll=' ~ L H 4.5 4.7 0.177 0.185

D I 3.53 3.66 0.139 0.144
P
J 1.2 1.3 0.047 0.051
1·f-!t-N1 M L 0.9 0.035
~~ M 2.7 0.106
N 5.3 0.209
N1 2.54 0.100
0 1.2 1.4 0.047 0.055
P 1.15 0.045 Marking: type number Weight: 1.8 g

Information furnished is believed to be accurate and reliable. However, SGS·THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS- THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.

© 1995 SGS- THOMSON Microelectronics - All rights reserved.

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