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Quarkid : q111613

Name : E.Sagar,M.Pawankumar
Email id : sagarrayal@gmail.com
Mobileno. : 7207165880
Branch : ECE
College : G.PULLAREDDY ENGINEERING COLLEGE,
KURNOOL,
ANDHRAPRADESH.
SINGLE ELECTRON TRANSISTOR

ABSTRACT :
The shotgun marriage of chemistry and engineering called “Nanotechnology” is ushering
in the era of self-replicating machinery and self-assembling consumer goods made from raw
atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology
proposes the construction of novel molecular devices possessing extraordinary properties. The
single electron transistor or SET is a new type of switching device that uses controlled electron
tunneling to amplify current.
By using the “Electron beam lithography” and “Electromigration”, the research
leads to the designing of a single atom transistor with the help of the meticulously synthesized
semiconductor crystals called “quantum dots”, which embodies the electrons confined in a
channel and resembles same in its properties as an real atom.
This paper presents a scenario on existing and ongoing studies on NANO
ELECTRONICS with the theoretical methods relevant to their understanding. Most of the
preceding discussion is premised upon the implicit assumption. That future quantum effect Nano
Electronic Devices will be fabricated in Nano Meter scale using molecules. Conductance
quantization in ballistic regime has been described under various conditions. The behavior of
“Coulomb Island” through which the electrons can only enter by tunneling through one of the
insulators is presented.
At last, the SET presents that it is the different construction is which is based on helical logic,
atomic scale motion of electrons in an applied rotating electric field

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