Surface Structure as a Building-Block of Nanostructures

Y. Fujikawaa and T. Sakurai

Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai
980-8577, Japan
a
fujika-0@imr.tohoku.ac.jp

Keywords: Group IV semiconductor; High-index surface; Quantum dots

The formation of SixGe1-x self-organized quantum dots (huts) on the Si(001)-2x1

surface [1] has attracted much attention because of the position of Ge/Si(001) as the
premier model system for investigating the physics of strain-induced nanostructure
growth. These huts have a highly ordered structure bounded by SiGe{105} facets, but
little is known about the structure of the {105} facet itself. We investigate
Ge(105)-1x2 surfaces formed on Si(105) substrates using STM under various
conditions to document that atomically-resolved STM images of the Ge/Si(105)-1x2
surface exhibit significant bias dependence. With help of first-principles calculations,
we conclude that the surface must have a structure different from the generally
accepted one [1]. Simulated STM images of the new structure model, which consists
of rebonded steps (RS model), are in excellent agreement with the experimental ones
[2]. Additionally, a direct observation of the RS structure is achieved using
non-contact AFM, something not possible with STM [3]. Our model demonstrates the
importance of tensile surface strain coming from the rebonded steps. For example,
hydrogen adsorption on Ge/Si(105) destabilizes the surface significantly because it
increases the surface strain by blocking the optimization of the RS structure [4]. This
result explains the previously reported ability of hydrogen to suppress Ge hut
formation on Si(001) (surfactant effect) [5]. Our findings on the strained atomic
structure of Ge(105) implies that the structure and the strain of semiconductor
nanostructures is controllable through the complete understanding of structures and
properties of their surfaces. This work was done in collaboration with Professors K.
Terakura, Y. Hasegawa, M.G. Lagally and their associates.

References
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[2] Y. Fujikawa et al.: Phys. Rev. Lett. Vol. 88 (2002), art. no. 176101; T.
Hashimoto et al.: Surf. Sci. Vol. 513 (2002), p. L445.
[3] T. Eguchi et al.: Phys. Rev. Lett. Vol. 93 (2004), art. no. 266102.
[4] Y. Fujikawa et al.: Phys. Rev. Lett., in press.
[5] A. Sakai and T. Tatsumi: Appl. Phys. Lett. Vol. 64 (1994), p. 52.