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  • Diode Current Sensor Circuit

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    The term of this patent is extended or adjusted under 35 U.S.c. 154(b) by 194 days. A CMOS light-to-current sensor built on silicon substrate is disclosed in this invention. The sensor includes a photo-diode and two MOS transistors.

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    Diode current sensor circuit

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    The term of this patent is extended or adjusted under 35 U.S.c. 154(b) by 194 days. A CMOS light-to-current sensor built on silicon substrate is disclosed in this invention. The sensor includes a photo-diode and two MOS transistors.

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    Скачайте в формате PDF, TXT или читайте онлайн в Scribd
    Отметить как неприемлемый контент
    44 просмотров12 страниц

    Diode Current Sensor Circuit

    Загружено:

    atulbhilai
    The term of this patent is extended or adjusted under 35 U.S.c. 154(b) by 194 days. A CMOS light-to-current sensor built on silicon substrate is disclosed in this invention. The sensor includes a photo-diode and two MOS transistors.

    Авторское право:

    Attribution Non-Commercial (BY-NC)
    Скачайте в формате PDF, TXT или читайте онлайн в Scribd
    Отметить как неприемлемый контент
    из 12
    «ry co) 5) © ey ~ (65) Gn) (2) 68) 66) United States Patent Chen SIMPLE CMOS LIGHT-T0-CURRENT SENSOR Inventor: Pao Jung Chen, 20872 Sola St, Cupertaa, CA (US) 95014 Notice: Subject to any dlisclaimer, the tem ofthis patent is extended or adjusted under 35 USCC. 154(b) by 194 days Appl. No. 10/406,053, Filed: Apr. 3, 2003, Prior Publication Data US 2005)0258339 Al Nov. 24, 2005 Im.cl, HOU. 3100 ‘See application file for complete search history. References Cited US. PATENT DOCUMENTS. 524.575 A * S(1903 Miyata a S372074 A 11/1966. Standley ‘US00698240682 (a0) Patent No: US 6,982,406 B2 (45) Date of Patent: Jan. 3, 2006 5938,782 A * 9/1999 Yiannoulos 2siiom2 372000 Chea 2517202 102000 Clark et a. 350208.1 6.201.270 BL* 32001 Chen 2s7io02 601/517 BL* 32001 Kusaka 358/482 (410,900 BI * 62002 Oxsmovo 250.2081 560,955 BI * 5/208 Tang 330/288 6.734.907 BL* 5/2004 Hagihaa et al 348,308 6822211 B2* 11/2004 Hapihara 2507208.1 aononelts? ALY 4/2004 Kashiura eta 257/202 * cited by examiner Primary Esaminer—Davi Porta Assistant Esaminer—Davienne Monblest (74) Attorney, Agent, oF Firm—Bo-ln Lin 6 ABSTRACT ACMOS light-to-curtent sensor built on silicon substrate is isclosed in this invention, This ligh-to-current sensor ineludes « photo-diode and two MOS transisors. The fist MOS tansistor is connected as the Toad transistor for the photo-gencrated! current from the photo-diode, and the sec- fond MOS transistor is connected as the curtent-migeor tcansistor for the fret transistor to output a current lincarly proportional to the photo-generated current fo the extemal resistor connected 1 the sensor 10 Claims, 8 Drawing Sheets Vec Obagoe Output ri2s GND U.S. Patent Jan. 3, 2006 Sheet 1 of 8 US 6,982,406 B2 Vaal eye 7a) 1 FIG, US 6,982,406 B2 Sheet 2 of 8 Jan. 3, 2006 U.S. Patent (qa¥ J0T4d) Z “OLA aNd Ge qnd3no quezing oR ydixw ODA US 6,982,406 B2 Sheet 3 of 8 Jan. 3, 2006 U.S. Patent aNd szt7% andjno queming 0A | oe | | oot aj | | ON | +U KR ! ydl xX W yd | | za Ta | | He 2 19 | | es oz Ss Cott | | US 6,982,406 B2 Sheet 4 of 8 Jan. 3, 2006 U.S. Patent aNd qndyno quezin9 see ® 20 US 6,982,406 B2 Sheet 5 of 8 5 2006 U.S. Patent G ‘Old aqerqsqns adfq-d 2 S| a aze uoTsnyjT (uoteng}Tp) ( ve P) uotbad TTam-u ie : \ y+ f f- {CD TEETELLETLETEETEEETEEN a ae aN3 0 szi-8 yndqno Con ase’ 20A US 6,982,406 B2 Sheet 6 of 8 Jan. 3, 2006 U.S. Patent DA | aNd -°- g| 001 | sere NY oO andino udt | quer | ydTXWXNXO | 9a 5 z9 Hip | NX ISTLo9T SS[Lgcq 128] Sozt ott | | US 6,982,406 B2 Sheet 7 of 8 Jan. 3, 2006 U.S. Patent aNd czz—¥ qndyno quezino DOA US 6,982,406 B2 Sheet 8 of 8 Jan. 3, 2006 U.S. Patent oo00T 3 oa (XT) soueuTuNT 000T —_00T ot t MT=Ta AL 2=99A T00"O TOO To oA, ot US 6,982,406 B2 1 SIMPLE CMOS LIGHT-T0-CURRENT SENSOR ‘TECHNICAL FIELD OF THE INVENTION ‘This invention relates to a photo-detector used as a photometer to provide a measurement ofthe amount of light power incident on the detector, Particular applications for these photometers include power-saving control for Steet lights ad domestic appliances, bick-lighting of displays in ‘elluae phones, notebook PCs, PDAS, video cameras, digital ‘ill cameras, and olber equipment requiring luminosity agjustment BACKGROUND OF THE INVENTION ‘A photometer IC ean be constricted by using a ligh-4o- ‘voltage sensor ora light-o-current sensor. light-to-volage Sensor combines 1 photoliode 10 and» trans-impedance light-o-voltage optical sensor (1) described in its datasheet by Texas Advanced Optoelectronic Solutions Tne., and is ilustated in FIG. 1, The tram-impedance amplifier 18 ‘senses the current ph generated by the photo-tiode 10 and ‘outputs a voltage proportional linearly to the photo-gener- sed eurtent, A lightto-current sensor combines 4 photo- ddiade 20 and a current amplilicr 25 o9 a single monolithic IC, such a the TPSSSL light-o-curent optical sensor (2) described in is data sbect by Toshiba Corp., ands illus trated in FIG. 2. Both sensors are widely used to measure the lighting brighiness ia dhe displays of cellular phones and portable devices. The trans-impedance amplifier 18 of the lighl-to-vollage seasor is quite complicated to implement as an integrated citevit, and the curtent ampliior 28 of the ‘TPSSSI light-to-curcent sensor is implemented in sophisti cated bipolar integrated circuits and manufactured using ‘expensive bipolar process technology. Tniraduetory technical reference for designing the trans- impedance amplifiers and the current amplifiers can be found inthe book (3) tiled “Analysis and Design of Analog TInwegeted Circuits” by Paul R. Gray and Robert G. Meyer ‘As more functioning chips are packed into electronic portable deviees, the demand for smaller and more cost- ‘effective photo-sensor chips increases, SUMMARY OF THE INVENTION “The photo-detector of tis invention is « CMOS light-to- ‘current sensor which is comprised of a photo-iode and 1Wo MOS transistor illustrated in FIGS. 3 and 4. As illustrated in FIG. 5 in a typical CMOS nvell process technology using 4 pelype substrate wafer, the photo-diode is con- struced by an n+ diffusion layer themally-difused on top ‘of the p-ype substrate, and the two MOS transisiors are p-channel transistors built in the nell region, As illustrated Jn FIG. 3, the circuit configuration of the sensor is as follows: the photosliode is connected in reverse biased ‘condition havin its p-type substrate node connected to the ‘most negative polenial OF the Seasor such a the ground and ltsn¢ diffusion node connected to oth the drain and the gate terminals of a prype MOS teansisior. The p-ype MOS transistor functions as the load transistor for the photo- ‘dod, the source terminal ofthis transistor is connected 10 the positive supply voltage of the sensor. A second plype MOS transistor is conned as the current-mieror teatsistor for the first transistor, having its gate terminal connected to the gate terminal othe fis transistor and itssource terminal uplfer 1S on single mooolithc IC, suchas the TSL2S1R % o 2 ‘connected fo the source terminal ofthe fist tansiston The ‘rain terminal ofthis second transistors the output sade of| the sensor, which will output an amplilied current linearly proportional to the photo-diode cutent to an external resi tor. ‘he operation of this CMOS light‘o-current sensor is described a follows: In the dark condition when no light is incident on the ptoto-diode, a small dark thermal-leakage current having the value of Several nano-Amperes, (1 nano ‘Ampere is equal to |.0E-9 Amperes), will low through the photo-

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