BB 804

Silicon Variable Capacitance Diode

3
• For FM tuners
• Monolithic chip with common cathode
for perfect tracking of both diodes
• Uniform "square law" characteristics
2
• Ideal HiFi tuning device when used in
low-distortion, back-to-back configuration 1 VPS05161

1 2

EHA07004

Type Marking Pin Configuration Package

BB 804 SFs 1 = A1 2 = A2 3=C1/2 SOT-23

Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR 18 V
Peak reverse voltage VRM 20
Forward current IF 50 mA
Operating temperature range Top 100 °C
Storage temperature Tstg -55 ... 150

1 Apr-19-1999
 BB 804

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current IR - - 20 nA
VR = 16 V
Reverse current IR - - 200
VR = 16 V, TA = 65 °C

AC characteristics
Diode capacitance CT 42 - 47.5 pF
VR = 2 V, f = 1 MHz
Capacitance ratio CT2 /CT8 1.65 1.71 - -
VR = 2 V, VR = 8 V, f = 1 MHz
Series resistance rs - 0.18 - Ω
VR = 2 V, f = 100 MHz
Q factor Q - 200 - -
VR = 2 V, f = 100 MHz
Temperatur coefficient of CT TCc - 330 - ppm/K
VR = 2 V, f = 1 MHz
Diode capacitance 1) CT pF
VR = 2V, f = 1MHz
Subgroup: 0 42 - 43.5
1 43 - 44.5
2 44 - 45.5
3 45 - 46.5
4 46 - 47.5

1) The capacitance subgroup is marked by the subgroup number printed on the component and the package
label. A packing unit (e.g. 8mm tape) contains diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.

2 Apr-19-1999
 BB 804

Diode capacitance CT = f (VR) Capacitance ratio CTref / CT = f (V R)

f = 1MHz per diode, Vref = parameter, f = 1MHz

EHD07050 EHD07051
80 3
pF C T ref C T1V
CT
70 CT CT

60
C T2V
2
50 CT

40

30
1
20

10

0 0
10 -1 10 0 10 1 V 10 2 0 5 10 15 V 20
VR VR

Temperature coefficient TCc = f (VR ),

per diode, f = 1MHz

EHD07052
10 -3

TC C 1
K

10 -4

10 -5
10 -1 100 101 V 10 2
VR

3 Apr-19-1999
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.