Академический Документы
Профессиональный Документы
Культура Документы
Class AB Operation
Also: i N =I S e
v BEN
vT
& i P =I S e
v EBP
VT V T ln
iN
IS
V T ln
iP
IS
=2 V T ln
IQ
IS
2008 Kenneth R. Laker, updated 30Nov09 KRL
4
ESE319 Introduction to Microelectronics
i N =i P i L
V T ln
iN
IS
V T ln
iP
IS
=2 V T ln
IQ
IS
V T ln
iN iP
I 2S
=2V T ln
IQ
IS
vO i N i N −i L =I Q2 or i P i P i L =I 2Q
i L= for vI > 0 V for vI < 0 V
RL
Hence:
2 2
i 2N −i N i L −I Q2 =0 or i P i P i L −I Q =0
for vI > 0 V for vI < 0 V
2008 Kenneth R. Laker, updated 30Nov09 KRL
6
ESE319 Introduction to Microelectronics
I Q2 1⋅10−6 1
i P= = −3
=0.1 mA= iN
i N 10⋅10 100
The Class AB circuit, over most of its input signal range, operates as if either
the QN or QP transistor is conducting and the QP or QN transistor is cut off.
Using this approximation we see that a class AB amplifier acts much like a
class B amplifier; but without the dead zone.
2008 Kenneth R. Laker, updated 30Nov09 KRL
8
ESE319 Introduction to Microelectronics
VCC
VBB/2
RSig VBB/2
RL
-VCC
V BB
=0.5V
2
V BB
=0.7V
2
CN v BEN
VT
BN di N ISe iN
= =
EN
<=> in dv BEN VT VT
EP ip
For the QP transistor:
vI BP vI di P iP
=
dv EBP V T
CP
ac ground
Hence:
VT VT
r eN = and r eP =
iN iP
for vI > 0 V: R out ≈r eN
R out =r eN ∥r eP
for vI < 0 V: R out ≈r eP
2008 Kenneth R. Laker, updated 30Nov09 KRL
12
ESE319 Introduction to Microelectronics
V T2
iN iP VT VT vO
R out =r eN ∣∣r eP = = = and i L = =i N −i P
VT VT
iN
iP
iN iP
1 1
iN iP i N i P
RL
So, for small signals, a small load current IQ flows => no dead-zone!
IREF
R
IQ IQ = IN
V BE1=V T ln
I REF
IS
Q2 = QN
VCC
+ +
IQ
- VBE1 VBE2- V BE2=V T ln
emitter IS
IO Re
degeneration I REF I S I REF
V BE1−V BE2 =V T ln =V T ln
IS IQ IQ
V CC −V BE1 12V −0.7 V
I REF = = =1 mA V BE1=V BE2I Q R e
R 11.3k
Note: Pages 653-656 in Sedra & Smith Text. I O R e =V T ln
I REF
IQ
Note Re > 0 iff IQ < IREF
2008 Kenneth R. Laker, updated 30Nov09 KRL
15
ESE319 Introduction to Microelectronics
IQ VT I REF 0.025V 10 m A
Re = ln = ln
If Re specified and IREF given: IQ IQ 10 A 10 A
VT
I Q=
Re
ln I REF −ln I Q .=2500 ln 1000=17.27 k
Solve for IQ graphically. R=1.13 k R e =17.27 k
2008 Kenneth R. Laker, updated 30Nov09 KRL
16
ESE319 Introduction to Microelectronics
.≈.
Rout
v x −−v r ≫1/ g m
i x =g m v i ro=g m v
ro
v =−r ∥Re i x Rout is greatly enhanced by
v x r ∥R e i x adding emitter degeneration.
i x =−g m r ∥R e i x − vx
ro ro ⇒ R out = = R e∥r 1g m r o
vx ix
.≈−g m r ∥R e i x
ro g m r o ≫1
2008 Kenneth R. Laker, updated 30Nov09 KRL
17
ESE319 Introduction to Microelectronics
I Q= I QN = I QP ≈2 mA
IREF IQN
R=2.8 kΩ
Q2
Q1
Re=10 Ω R =100 Ω i L =i N −i P
iN L
V CC −V BE1 V CC −V EB3
Amplitude: 0 Vp
Q3 iIiLLL R= = ≈2.8 k
Re=10 Ω I REF I REF
Frequency: 1 kHz Q4
R=2.8 kΩ
IREF IQP
Re=
VT
I QN
ln
I REF
I QN
≈ 10
2.329m
Quiescent Power
Dissipation vI = 0 V:
P Disp=P D−av =76.31 mW 75.53 mW
.=151.84 mW 2.270m
4.025m
Amplitude: 12 Vp
Frequency: 1 kHz
Q4 2. Q1 ≠ Cutoff =>
v BQ1 ≥ v I 0.7 V
v BQ1=V CC −i REF R
v I ≤ V CC −i REF R−0.7 V =v I −max2
v O =−i N Re V EB1V BE2v I v I −max =max v I −max1 , v I −max2
2008 Kenneth R. Laker, updated 30Nov09 KRL
21
ESE319 Introduction to Microelectronics
3.324m
0.018m
I REFN 309 mW
I QN
Q2 PD+av 9 9.7V
V BQ1 PL-av
Q1 NOTE:
VI 2.697m
VO 1. Linear operation up to VI = 9 V:
Q3
PDav = 946mW, PLav = 510mW =>
Q4 PLav P Lav 510 mW
= = =0.540.785
P Dav 946 mW
PD-av
2. At VI = 10 V: VBEQ3 = VBQ3 – VI = -0.1V
I QP
1.776u NPN Q1 is cutoff for VI ≥ 9.5 V.
4.734m 3. By symmetry PNP Q3 is cutoff
PD-av
for VI ≤ -9.5V .
2008 Kenneth R. Laker, updated 30Nov09 KRL
22
ESE319 Introduction to Microelectronics
Conclusions
ADVANTAGE:
Class AB operation improves on Class B linearity.
DISADVANTAGES:
1. Emitter resistors absorb output power.
2. Power Conversion Efficiency is less than Class B.
3. Temperature matching will be needed – more so.
if emitter resistors are not used.
TRADEOFFS:
Tradeoffs - involving bias current - between power
efficiency, power dissipation and output signal swing
need to be addressed.
2008 Kenneth R. Laker, updated 30Nov09 KRL
23