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TEC
25.0
+0.1 -0.15
BUZ900 BUZ901
10.90 0.1
30.2 0.15
20 M ax.
39.0 1.1
16.9 0.15
1.0
FEATURES
HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)
R 4.0 0.1
R 4.4 0.2
HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE Case Source PCHANNEL ALSO AVAILABLE AS BUZ905 & BUZ906
TO3
Pin 1 Gate Pin 2 Drain
Magnatec.
Prelim. 10/94
MAGNA
TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain Source Breakdown Voltage Gate Source Breakdown Voltage Gate Source CutOff Voltage Drain Source Saturation Voltage
BUZ900 BUZ901
Min.
160 200 14 0.15
Typ.
Max.
Unit
V V
1.5 12 10
V V
mA 10 2 S
Test Conditions
VDS = 10V f = 1MHz VDS = 20V ID = 5A
Min.
Typ.
500 300 10 100 50
Max.
Unit
pF
ns
150
Derating Chart
125
CH AN NE L D ISS IP ATION (W )
100
75
50
25
Magnatec.
Prelim. 10/94
MAGNA
TEC
9 8 7
I D D R AIN C U RR EN T (A)
5V
BUZ900 BUZ901
9 8 7
I D D R AIN C U RR EN T (A)
TC = 25C
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90
V DS DRAIN SOURCE VOLTAGE (V)
4V
6 5
5V
10
AT
I D D R AIN C U RR EN T (A)
IO
G FS TR AN SC ON DU C TAN CE (S)
= P CH
= P CH
12
5W
4 3 2 1 0 0 10 20
4V
12
5W
3V
3V
2V
2V
30
40
50
60
70
80
90
100
V DS = 20V
Transconductance
OP
ER
10
TC = 25C TC = 75C
0.1
BUZ900 BUZ901
160V
0.01 1 10 100
200V
0.1 1000 0 1 2 3 4 5 6 7 8
I D DRAIN CURRENT (A)
9 8 7
I D D R AIN C UR R EN T (A)
V DS DR AIN S OU RC E V OLTAGE (V )
6
TC = 100C
6
I D = 6A
5 4 3 2
4
I D = 3A
2
I D = 1A
1 0
0 0 2 4 6 8 10 12 14
V GS GATE SOURCE VOLTAGE (V)
Magnatec.
Prelim. 10/94