EE 359 Electronic Circuits

Field Effect Transistors (FET)

Examples Frequency Response

Sep. 21, 2007

EE 359 Electronic Circuits

Homework
Chapter 4, FET Transistors due Sep. 24
4.12,4.46,4.75,4.96 Quiz 1 Sep 28 (next Friday) Quiz 2

Oct 30 Project abstracts due October 9 (Tuesday following Monday schedule) 1 page long, your name, project title, a paragraph summary of problem you want to analyze
Sep. 21, 2007
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EE 359 Electronic Circuits

Review of FET operation

In general, we will use FET in saturation 0 V V V region.

GS t GD

Design ckt, ID=0.4mA VD=1V, Vt=2V

nCox = 20 A / V 2 , L = 10 m,W = 400 m

Sep. 21, 2007

EE 359 Electronic Circuits

DC Analysis

VD=1 V , saturation region

1 W I D = nCox (VGS Vt ) 2 2 L 3 400 0.4 = 0.5 x 20 x10 x (VGS Vt ) 2 10 VGS = 2 1 VGS = 3V

Sep. 21, 2007

EE 359 Electronic Circuits

Biasing Issues
VS VSS RS = ID 3 ( 5) RS = 0.4 RS = 5k

VGS=3V, VGS>VT

VDD VD RD = ID 5 (1) RS = 0.4 RS = 10k

To establish +1V at drain

Sep. 21, 2007

EE 359 Electronic Circuits

Biasing (PMOS)

Design ckt st. +9.9V at the source. Effective resistance ro ? (Note PMOS) VGS=0, VGD=-0.1V < |Vt| Triode region operation:
1 I D = 1( 0 ( 1) ) x0.1 x0.01 0.1mA 2

Sep. 21, 2007

EE 359 Electronic Circuits

Output resistance
RD = 9.9V = 99k 100 k 0.1mA
VDS 0.1V = = 1k I D 0.1mA

Select: Find rDS

rDS =

Sep. 21, 2007

EE 359 Electronic Circuits

Amplifier Circuit

Input signal vi Output signal vo DC bias currents

1 x0.25(VGS 1.5) 2 2 VD = 15 RD I D = 15 10 I D ID = I D = 1.06mA VD = 4.4V
Sep. 21, 2007

EE 359 Electronic Circuits

Small Signal Parameters

W (VGS Vt ) L g m = 0.25(4.4 1.5) = 0.725mA / V g m = k 'n

Find conductance

Output resistance
ro = VA 50 = = 47 k I D 1.06

Sep. 21, 2007

EE 359 Electronic Circuits

Small Signal Gain

Draw small signal equiv. RG very large > 10M, neglect Calculate gain: Input resistance:
vo g m v gs ( RD || RL || ro ) vo = g m ( RD || RL || ro ) = 3.3 vi
i1 = (vi vo ) / RG i1 = vi [1 (3.3)] = 4.3 vi RG RG

Rin = RG / 4.3 = 10 M / 4.3 = 2.2 M

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EE 359 Electronic Circuits Internal and external capacitances High-frequency equivalent circuit model for the MOSFET (a)

Frequency response

High-frequency equivalent circuit model for the MOSFET when Source is connected to Body (b)
Sep. 21, 2007
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EE 359 Electronic Circuits

Simplified Capacitance Model

Notice we omit capacitance to Body!

Sep. 21, 2007

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EE 359 Electronic Circuits

MOSFET High Freq. Model

2 = WLC ox + WL ov Cox 3
W W I VOV = 2 nCox I D = 2 D L L VOV

g m = nCox

C gs

C gd = WL ov Cox

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EE 359 Electronic Circuits

Freq. Response CS

AM = ? BW=?

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EE 359 Electronic Circuits

Small-signal equivalent circuit

(a) equivalent circuit;

(b) the circuit of (a) simplified at the input and the output;

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EE 359 Electronic Circuits

Equivalent circuit

In the simplified model, we combine the capacitances to ground.

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EE 359 Electronic Circuits

Low Frequency Resp.

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EE 359 Electronic Circuits

Pspice Simulation

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EE 359 Electronic Circuits

Frequency Respons

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