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KA5x03xx-SERIES

KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN, KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS)

Features

• Precision Fixed Operating Frequency (100/67/50kHz)

• Low Start-up Current(Typ. 100uA)

• Pulse by Pulse Current Limiting

• Over Current Protection

• Over Voltage Protection (Min. 25V)

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

• Auto-Restart Mode

Applications

• SMPS for VCR, SVR, STB, DVD & DVCD

• SMPS for Printer, Facsimile & Scanner

• Adaptor for Camcorder

Internal Block Diagram

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter

TO-220F-4L

1
1

1. GND 2. Drain 3. V CC 4. FB

8-DIP

TO-220F-4L 1 1. GND 2. Drain 3. V C C 4. FB 8-DIP 1.6.7.8 Drain 2.

1.6.7.8 Drain

2. GND

3. V CC

4. FB 5. NC

32V 5V Internal Vref bias SFET Good logic OSC 9V S Q 5µA 1mA R
32V
5V
Internal
Vref
bias
SFET
Good
logic
OSC
9V
S
Q
5µA
1mA
R
L.E.B
2.5R
+
1R
0.1V
+
7.5V
S
Q
R
+
Thermal S/D
Power on reset
27V
OVER VOLTAGE S/D

#3 V CC

(*#3 V CC )

#2 DRAIN

(*#1.6.7.8 DRAIN)

#4 FB

(*#4 FB)

#1 GND

(*#2 GND)

*Asterisk - KA5M0365RN, KA5L0365RN

Rev.1.0.5

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic

Symbol

Value

Unit

KA5H0365R, KA5M0365R, KA5L0365R

Maximum Drain Voltage

V

D,MAX

650

V

Drain-Gate Voltage (RGS=1M)

VDGR

650

V

Gate-Source (GND) Voltage

 

V

GS

±30

V

Drain Current Pulsed (1)

 

I

DM

12.0

A DC

Continuous Drain Current (T C =25°C)

 

I D

3.0

A DC

Continuous Drain Current (T C =100°C)

 

I D

2.4

A DC

Single Pulsed Avalanche Energy (2)

 

E

AS

358

mJ

Maximum Supply Voltage

V

CC,MAX

30

V

Analog Input Voltage Range

 

V

FB

-0.3 to V SD

V

Total Power Dissipation

 

P

D

75

W

Derating

0.6

W/°C

Operating Junction Temperature.

 

T

J

+160

°C

Operating Ambient Temperature.

 

T

A

-25 to +85

°C

Storage Temperature Range.

T

STG

-55 to +150

°C

KA5H0380R, KA5M0380R, KA5L0380R

Maximum Drain Voltage

V

D,MAX

800

V

Drain-Gate Voltage (R GS =1M)

V

DGR

800

V

Gate-Source (GND) Voltage

 

V

GS

±30

V

Drain Current Pulsed (1)

 

I

DM

12.0

A DC

Continuous Drain Current (T C =25°C)

 

I

D

3.0

A DC

Continuous Drain Current (T C =100°C)

 

I

D

2.1

A DC

Single Pulsed Avalanche Energy (2)

 

E

AS

95

mJ

Maximum Supply Voltage

VCC,MAX

30

V

Analog Input Voltage Range

 

V

FB

-0.3 to V SD

V

Total Power Dissipation

 

P

D

75

W

Derating

0.6

W/°C

Operating Junction Temperature.

 

T

J

+160

°C

Operating Ambient Temperature.

 

T

A

-25 to +85

°C

Storage Temperature Range.

TSTG

-55 to +150

°C

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L = 51mH, starting Tj = 25°C

3. L = 13µH, starting Tj = 25°C

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic

Symbol

Value

Unit

KA5M0365RN, KA5L0365RN

Maximum Drain Voltage

V

D,MAX

650

V

Drain-Gate Voltage (RGS=1M)

VDGR

650

V

Gate-Source (GND) Voltage

 

V

GS

±30

V

Drain Current Pulsed (1)

 

I

DM

12.0

A DC

Continuous Drain Current (Ta=25°C)

 

I

D

0.42

A DC

Continuous Drain Current (Ta=100°C)

 

I

D

0.28

A DC

Single Pulsed Avalanche Energy (2)

 

E

AS

127

mJ

Maximum Supply Voltage

V

CC,MAX

30

V

Analog Input Voltage Range

 

V

FB

-0.3 to V SD

V

Total Power Dissipation

 

P

D

1.56

W

Derating

0.0125

W/°C

Operating Junction Temperature.

 

T

J

+160

°C

Operating Ambient Temperature.

 

T

A

-25 to +85

°C

Storage Temperature Range.

T

STG

-55 to +150

°C

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L = 51mH, starting Tj = 25°C

3. L = 13µH, starting Tj = 25°C

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

KA5H0365R, KA5M0365R, KA5L0365R

Drain-Source Breakdown Voltage

BV DSS

V GS =0V, I D =50µA

650

-

-

V

   

VDS=Max. Rating, VGS=0V

-

-

50

µA

Zero Gate Voltage Drain Current

 

I

DSS

V DS =0.8Max. Rating, V GS =0V, T C =125°C

-

-

200

µA

Static Drain-Source on Resistance (Note)

R

DS(ON)

V GS =10V, I D =0.5A

-

3.6

4.5

Forward Transconductance (Note)

 

gfs

V DS =50V, I D =0.5A

2.0

-

-

S

Input Capacitance

 

Ciss

 

-

720

-

 

Output Capacitance

 

Coss

V GS =0V, V DS =25V,

 

40

 

pF

f=1MHz

-

-

Reverse Transfer Capacitance

 

Crss

-

40

-

 

Turn On Delay Time

td(on)

V DD =0.5BV DSS , I D =1.0A (MOSFET switching time is essentially independent of operating temperature)

-

150

-

 

Rise Time

 

tr

-

100

-

nS

Turn Off Delay Time

td(off)

-

150

-

Fall Time

 

tf

-

42

-

 

Total Gate Charge (Gate-Source+Gate-Drain)

 

Qg

V GS =10V, I D =1.0A, V DS =0.5BV DSS (MOSFET

-

-

34

 

Gate-Source Charge

 

Qgs

switching time is essentially independent of

-

7.3

-

nC

         

Gate-Drain (Miller) Charge

 

Qgd

operating temperature)

-

13.3

-

KA5H0380R, KA5M0380R, KA5L0380R

Drain-Source Breakdown Voltage

BV DSS

V GS =0V, I D =50µA

800

-

-

V

   

V DS =Max. Rating, V GS =0V

-

-

250

µA

Zero Gate Voltage Drain Current

 

I

DSS

V DS =0.8Max. Rating, VGS=0V, TC=125°C

-

-

1000

µA

Static Drain-Source on Resistance (Note)

R

DS(ON)

V GS =10V, I D =0.5A

-

4.0

5.0

Forward Transconductance (Note)

 

gfs

V DS =50V, I D =0.5A

1.5

2.5

-

S

Input Capacitance

 

Ciss

 

-

779

-

 

Output Capacitance

 

Coss

V GS =0V, V DS =25V,

 

75.6

 

pF

f=1MHz

-

-

Reverse Transfer Capacitance

 

Crss

-

24.9

-

 

Turn On Delay Time

td(on)

VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature)

-

40

-

 

Rise Time

 

tr

-

95

-

nS

Turn Off Delay Time

td(off)

-

150

-

Fall Time

 

tf

-

60

-

 

Total Gate Charge (Gate-Source+Gate-Drain)

 

Qg

V GS =10V, I D =1.0A, V DS =0.5BV DSS (MOSFET

-

-

34

 

Gate-Source Charge

 

Qgs

switching time is essentially independent of

-

7.2

-

nC

Gate-Drain (Miller) Charge

       
 

Qgd

operating temperature)

-

12.1

-

Note:

1. Pulse test: Pulse width 300µS, duty 2%

2.

S

=

1

----

R

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

KA5M0365RN, KA5L0365RN

Drain-Source Breakdown Voltage

BV DSS

V GS =0V, I D =50µA

650

-

-

V

   

VDS=Max. Rating, VGS=0V

-

-

50

µA

Zero Gate Voltage Drain Current

 

I

DSS

V DS =0.8Max. Rating, V GS =0V, T C =125°C

-

-

200

µA

Static Drain-Source on Resistance (Note)

R

DS(ON)

V GS =10V, I D =0.5A

-

3.6

4.5

Forward Transconductance (Note)

 

gfs

V DS =50V, I D =0.5A

2.0

-

-

S

Input Capacitance

 

Ciss

 

-

314.9

-

 

Output Capacitance

 

Coss

V GS =0V, V DS =25V,

 

47

 

pF

f=1MHz

-

-

Reverse Transfer Capacitance

 

Crss

-

9

-

 

Turn On Delay Time

td(on)

V DD =0.5BV DSS , I D =1.0A (MOSFET switching time is essentially independent of operating temperature)

-

11.2

-

 

Rise Time

 

tr

-

34

-

nS

Turn Off Delay Time

td(off)

-

28.2

-

Fall Time

 

tf

-

32

-

 

Total Gate Charge (Gate-Source+Gate-Drain)

 

Qg

V GS =10V, I D =1.0A, V DS =0.5BV DSS (MOSFET switching time is essentially independent of operating temperature)

   

11.93

 

Gate-Source Charge

 

Qgs

-

1.95

-

nC

Gate-Drain (Miller) Charge

 

Qgd

 

6.85

 

Note:

1. Pulse test: Pulse width 300µS, duty 2%

2.

S

=

1

----

R

KA5X03XX-SERIES

Electrical Characteristics (Control Part) (Continued)

(Ta = 25°C unless otherwise specified)

Characteristic

Symbol

 

Test condition

Min.

Typ.

Max.

Unit

UVLO SECTION

Start Threshold Voltage

V

START

V

FB =GND

14

15

16

V

Stop Threshold Voltage

VSTOP

VFB=GND

8.4

9

9.6

V

OSCILLATOR SECTION

   

KA5H0365R

       

Initial Accuracy

F

OSC

KA5H0380R

90

100

110

kHz

   

KA5M0365R

       

Initial Accuracy

F

OSC

KA5M0365RN

61

67

73

kHz

 

KA5M0380R

   

KA5L0365R

       

Initial Accuracy

F

OSC

KA5L0365RN

45

50

55

kHz

 

KA5L0380R

Frequency Change With Temperature (2)

 

-

-25°CTa+85°C

-

±5

±10

%

   

KA5H0365R

       

Maximum Duty Cycle

Dmax

KA5H0380R

62

67

72

%

   

KA5M0365R

       

KA5M0365RN

KA5M0380R

Maximum Duty Cycle

Dmax

KA5L0365R

72

77

82

%

KA5L0365RN

KA5L0380R

FEEDBACK SECTION

Feedback Source Current

 

I

FB

Ta=25°C, 0V<Vfb<3V

0.7

0.9

1.1

mA

Shutdown Feedback Voltage

V

SD

Vfb>6.5V

6.9

7.5

8.1

V

Shutdown Delay Current

Idelay

Ta=25°C, 5VVfbV SD

 

456

 

µA

REFERENCE SECTION

Output Voltage (1)

 

Vref

Ta=25°C

4.80

5.00

5.20

V

Temperature Stability (1)(2)

Vref/T

-25°CTa+85°C

-

0.3

0.6

mV/°C

CURRENT LIMIT(SELF-PROTECTION)SECTION

 

Peak Current Limit

IOVER

Max. inductor current

1.89

2.15

2.41

A

PROTECTION SECTION

Over Voltage Protection

V

OVP

V

CC >24V

25

27

29

V

Thermal Shutdown Temperature (Tj) (1)

T

SD

 

-

140

160

-

°C

TOTAL STANDBY CURRENT SECTION

Start-up Current

I

START

V

CC =14V

 

- 100

170

µA

Operating Supply Current (Control Part Only)

 

I

OP

V

CC <28

 

- 12

7

 

mA

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS(water test) process

KA5X03XX-SERIES

]

,[

R DS(on)

Typical Performance Characteristics(SenseFET part)

(KA5H0365R, KA5M0365R, KA5L0365R)

10 V GS Top : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V 1 @Notes:
10
V GS
Top :
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
1
@Notes:
1.
300 µ s Pulse Test
2.
T C =25 o C
0.1
1
10
I D , Drain Current [A]

V DS , Drain-Source Voltage [V]

Figure 1. Output Characteristics

7 6 Vgs=10V 5 4 Vgs=20V 3 2 @Note : Tj=25℃ 1 0 Drain-Source On-Resistance
7
6
Vgs=10V
5
4
Vgs=20V
3
2
@Note : Tj=25℃
1
0
Drain-Source On-Resistance

012345

I D ,Drain Current [A]

Figure 3. On-Resistance vs. Drain Current

700 C iss =C gs +C gd (C ds = shorted) 600 C oss =C
700
C
iss =C gs +C gd (C ds = shorted)
600
C
oss =C ds +C gd
C
rss =C gd
500
C
iss
400
300
200
C
oss
100
C
rss
0
10 0
10 1
Capacitance [pF]

V DS , Drain-Source Voltage [V]

Figure 5. Capacitance vs. Drain-Source Voltage

10 150 o C 1 -25 o C 25 o C @Notes: 1. V DS
10
150 o C
1
-25 o C
25 o C
@Notes:
1.
V DS = 30V
2.
300 µ s Pulse Test
0.1
2
4
6
8
10
I D , Drain Current [A]

V GS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

1 150 o C 25 o C 0.1 @Notes : 1.VGS=0V 2. 300 µ s
1
150
o C
25 o C
0.1
@Notes :
1.VGS=0V
2. 300 µ s Pulse Test
0.01
0.4
0.6
0.8
1.0
1.2
I DR , Reverse Drain Current [A]

V SD , Source-Drain Voltage [V]

Figure 4. Source-Drain Diode Forward Voltage

10 V DS =130V V DS =320V 8 V DS =520V 6 4 2 @Note
10
V
DS =130V
V DS =320V
8
V DS =520V
6
4
2
@Note : I D =3.0A
0
0
5
10
15
20
25
V GS ,Gate-Source Voltage[V]

Q G ,Total Gate Charge [nC]

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

1.2 1.1 1.0 @ Notes : 0.9 1. V GS = 0V 2. I D
1.2
1.1
1.0
@ Notes :
0.9
1. V GS = 0V
2. I D = 250µA
0.8
-50
0
50
100
150
BV DSS , (Normalized)
Drain-Source Breakdown Voltage

T J , Junction Temperature [ o C]

Figure 7. Breakdown Voltage vs. Temperature

2 10 Operation inThisArea is Limited by R DS(on) 10 µs 1 10 10 0
2
10
Operation
inThisArea
is
Limited by
R DS(on)
10
µs
1
10
10
0 µs
1ms
10ms
DC
0
10
@Notes
:
-1
10
o
1.
T
=25
C
C
2.
T
=150 o C
J
3.
SinglePulse
-2
10
10 0
10 1
10 2
10 3
I D ,DrainCurrent [A]

V DS ,Drain-SourceVoltage [V]

Figure 9. Max. Safe Operating Area

2.5 2.0 1.5 1.0 @Notes: 1. V GS = 10V 0.5 2. 1.5A I D
2.5
2.0
1.5
1.0
@Notes:
1. V GS
= 10V
0.5
2. 1.5A
I D =
0.0
-50
0
50
100
150
R DS(on) , (Normalized)
Drain-Source On-Resistance

T J , Junction Temperature [ o C]

Figure 8. On-Resistance vs. Temperature

3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 I D
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
I D , Drain Current [A]

T C , Case Temperature [ o C]

Figure 10. Max. Drain Current vs. Case Temperature

10 0 D=0.5 0.2 @ Notes : 1. Z θ JC (t)=1.25 o C/W Max.
10 0
D=0.5
0.2
@
Notes
:
1.
Z
θ JC (t)=1.25 o C/W
Max.
0.1
2.
Duty
Factor, D=t 1 /t 2
-1
10
3.
T
(t)
0.05
JM -T C =P DM *Z θ JC
0.02
0.01
single
pulse
-2
10
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
Z JCθ (t) , Thermal Response

t 1 , Square Wave Pulse Duration [sec]

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

1 10 V GS Top : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V 0
1
10
V GS
Top :
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
0
10
@Notes:
1. 300µ s Pulse Test
2. T C =25 o C
-1
10
10 0
10 1
I D , Drain Current [A]

V DS , Drain-Source Voltage [V]

Figure 1. Output Characteristics

1 10 0 10 150 o C @Notes: 25 o C -25 o C 1.
1
10
0
10
150
o C
@Notes:
25
o C
-25 o C
1. V DS =30V
2. 300 µ s Pulse Test
-1
10
2
4
6
8
10
I D , Drain Current [A]

V GS , Gate-Source Voltage [V]

Figure 2. Thansfer Characteristics

Fig3. On-Resistance vs. Drain Current 8 7 Vgs=10V 6 5 Vgs=20V 4 3 2 1
Fig3. On-Resistance vs. Drain Current
8
7
Vgs=10V
6
5
Vgs=20V
4
3
2
1
@ Note : Tj=25℃
0
R DS(on)
[ Ω,
]
Drain-Source On-Resistance
10 1 25 o C 1 50 o C @Notes: 1. V GS =0V 2.
10
1
25
o C
1
50
o C
@Notes:
1. V GS =0V
2. 300 µ s Pulse Test
0.1
I DR , Reverse Drain Current [A]

01234 0.4

0.6

0.8

1.0

I D ,Drain Current

V SD , Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

1000 C =C gs +C gd (C ds = shorted) 900 iss C oss =
1000
C
=C gs +C gd (C ds = shorted)
900
iss
C
oss =
C ds +C gd
800
C
rss
=C gd
700
600
C
iss
500
400
300
200
C
oss
100
C
rss
0
10 0
10 1
Capacitance [pF]

V DS , Drain-Source Voltage [V]

Figure 5. Capacitance vs. Drain-Source Voltage

10 V DS =160V V DS =400V 8 V DS =640V 6 4 2 @Note
10
V DS =160V
V DS =400V
8
V
DS =640V
6
4
2
@Note : I D =3.0A
0
0
5
10
15
20
25
30
V GS ,Gate-Source Voltage[V]

Q G ,Total Gate Charge [nC]

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

1.2 1.1 1.0 @ Notes : 0.9 1. V GS = 0V 2. I D
1.2
1.1
1.0
@
Notes :
0.9
1. V GS = 0V
2. I D = 250µA
0.8
-50
0
50
100
150
BV DSS , (Normalized)
Drain-Source Breakdown Voltage

T J , Junction Temperature [ o C]

Figure 7. Breakdown Voltage vs. Temperature

2 10 Operationin This Area isLimited byR DS(on) 1 10 10 µ s 100 µ
2
10
Operationin
This
Area
isLimited
byR
DS(on)
1
10
10 µ s
100 µ
s
1ms
10ms
0
10
DC
@Notes
:
-1
10
o
1.T C =25
C
2.T J =150 o C
3.SinglePulse
-2
10
10 1
10 2
10 3
I D , Drain Current [A]

V DS , Drain-Source Voltage [V]

Figure 9. Max. Safe Operating Area

2.5 2.0 1.5 1.0 @ Notes: 1. V GS = 10V 0.5 2. I D
2.5
2.0
1.5
1.0
@ Notes:
1.
V
GS = 10V
0.5
2.
I
D = 1.5 A
0.0
-50
0
50
100
150
R DS(on) , (Normalized)
Drain-Source On-Resistance

T J , Junction Temperature [ o C]

Figure 8. On-Resistance vs. Temperature

3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 40 60 80 100 120 140 I
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
60
80
100
120
140
I D , Drain Current [A]

T C , Case Temperature [ o C]

Figure 10. Max. Drain Current vs. Case Temperature

0 10 D=0.5 @ Notes : 0.2 1. Z θ JC (t)=1.25 o C/W Max.
0
10
D=0.5
@
Notes
:
0.2
1. Z θ JC (t)=1.25 o
C/W
Max.
2. Duty
Factor, D=t 1
/t
2
0.1
3. T JM -T C
=P DM *Z θ J
C (t)
-1
10
0.05
0.02
0.01
single
pulse
-2
10
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
Z θ JC (t) , Thermal Response

t 1 , Square Wave Pulse Duration

[sec]

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics(SenseFET part) (Continued)

(KA5M0365RN, KA5L0365RN)

1 10 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5
1
10
V GS
Top :
15.0
V
10.0
V
8.0
V
7.0
V
6.5
V
6.0
V
Bottom :
5.5
V
0
10
-1
10
※ Note :
1. Test
250μ s Pulse
2. T C = 25℃
10 0
10 1
I D , Drain Current [A]

V DS , Drain-Source Voltage [V]

Figure 1. Output Characteristics

1 10 150℃ -55℃ 0 10 25℃ ※ Note 1. V DS = 50V 2.
1
10
150℃
-55℃
0
10
25℃
※ Note
1. V DS = 50V
2. 250μ s Pulse Test
-1
10
2
4
6
8
10
I D , Drain Current [A]

V GS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

8.0 7.5 1 10 7.0 6.5 V GS = 10V 6.0 5.5 V GS =
8.0
7.5
1
10
7.0
6.5
V GS = 10V
6.0
5.5
V GS = 20V
5.0
0
10
150℃
4.5
25℃
※ Note :
4.0
1. V GS = 0V
2. 250μ s Pulse Test
3.5
※ Note : T J
= 25℃
3.0
-1
2.5
10
01234567 0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ω[
],
R DS(ON)
Drain-Source
On-Resistance
I DR , Reverse Drain Current [A]

I D , Drain Current [A]

Figure 3. On-Resistance vs. Drain Current

700 C iss = C gs + C gd (C ds = shorted) C oss
700
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
600
C rss = C gd
C
500
iss
C
400
oss
300
C
※ Note ;
rss
200
1. V GS = 0 V
2. f
= 1 MHz
100
10 -1
10 0
10 1
Capacitances [pF]

V DS , Drain-Source Voltage [V]

Figure 5. Capacitance vs. Drain-Source Voltage

V SD , Source-Drain Voltage [V]

Figure 4. Source-Drain Diode Forward Voltage

12 10 V DS = 130V V DS = 325V 8 V DS = 520V
12
10
V DS = 130V
V DS = 325V
8
V DS = 520V
6
4
2
※ Note : I D = 3.0 A
0
0
2
4
6
8
10
12
V GS , Gate-Source Voltage [V]

Q G , Total Gate Charge [nC]

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

( KA5M0365RN, KA5L0365RN)

1.15 1.10 1.05 1.00 0.95 ※ Note : 1. V GS = 0 V 2.
1.15
1.10
1.05
1.00
0.95
※ Note :
1. V GS = 0 V
2. I D = 250
μ A
0.90
-50
0
50
100
150
BV DSS , (Normalized)
Drain-Source Breakdown Voltage

T J , Junction Temperature [ o C]

Figure 7. Breakdown Voltage vs. Temperature

1 10 Operation in This Area is Limited by R DS(on) 10 µs 0 100
1
10
Operation in This
Area
is
Limited by R DS(on)
10 µs
0
100
µs
10
1
ms
10 ms
100 ms
-1
1
s
10
10 s
DC
-2
10
-3
10
10 0
10 1
10 2
I D , Drain Current [A]

V DS , Drain-Source Voltage [V]

Figure 9. Max. Safe Operating Area

2.5 2.0 1.5 1.0 ※ Note : 1. V GS = 10 V 0.5 2.
2.5
2.0
1.5
1.0
※ Note :
1. V GS = 10 V
0.5
2. I D = 1.5 A
-50
0
50
100
150
R DS(ON) , (Normalized)
Drain-Source On-Resistance

T J , Junction Temperature [ o C]

Figure 8. On-Resistance vs. Temperature

0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 150 I D ,
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
I D , Drain Current [A]

T C , Case Temperature [? ]

Figure 10. Max. Drain Current vs. Case Temperature

D=0.5 0.2 10 0.1 0.05 0.02 1 0.01 ? Notes : 1. Z ? JC
D=0.5
0.2
10
0.1
0.05
0.02
1
0.01
?
Notes :
1. Z ? JC (t) = 80
? /W Max.
2. Duty Factor,
D=t 1 /t 2
single
pulse
3.
T JM
-
=
Z ? JC (t)
T C
P DM *
0.1
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
Z ? JC (t), Thermal Response

t 1 , Square Wave Pulse Duration [sec]

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics (Control Part) (Continued)

(These characteristic graphs are normalized at Ta = 25 ° C)

Fig.1 Operating Frequency

1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75
1.2
1.15
1.1
1.05
Fosc
1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100 125 150

Figure 1. Operating Frequency

Fig.3 Operating Current

1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 0 25 50 75
1.2
1.15
1.1
1.05
Iop
1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100
125
150

Figure 3. Operating Supply Current

Istart

Fig.5 Start up Current 1.5 1.3 1.1 0.9 0.7 0.5 -25 0 25 50 75
Fig.5 Start up Current
1.5
1.3
1.1
0.9
0.7
0.5
-25
0
25
50
75
100
125
150
Figure 5. Start up Current

Fig.2 Feedback Source Current

1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0 25 50 75
1.2
1.15
1.1
1.05
Ifb
1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100
125
150
Figure 2. Feedback Source Current
25 50 75 100 125 150 Figure 2. Feedback Source Current Fig.4 Max Inductor Current 1.1
Fig.4 Max Inductor Current 1.1 1.05 I Ipeak over 1 0.95 0.9 0.85 0.8 -25
Fig.4 Max Inductor Current
1.1
1.05
I Ipeak over
1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100
125
150
Figure 4. Peak Current Limit

Fig.6 Start Threshold Voltage

1.15 1.1 1.05 Vstart 1 0.95 0.9 0.85 -25 0 25 50 75 100 125
1.15
1.1
1.05
Vstart
1
0.95
0.9
0.85
-25
0
25
50
75
100
125
150
Figure 6. Start Threshold Voltage

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25 ° C)

Fig.7 Stop Threshold Voltage

1.15 1.1 1.05 Vstop 1 0.95 0.9 0.85 -25 0 25 50 75 100 125
1.15
1.1
1.05
Vstop
1
0.95
0.9
0.85
-25
0
25
50
75
100
125
150
Figure 7. Stop Threshold Voltage

Fig.9 Vcc Zener Voltage

1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 0 25 50 75
1.2
1.15
1.1
1.05
Vz
1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100
125
150

Figure 9. V CC Zener Voltage

Fig.11 Shutdown Delay Current

1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 0 25 50 75
1.2
1.15
1.1
1.05
Idelay
1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100
125
150
Figure 11. Shutdown Delay Current

Fig.8 Maximum Duty Cycle

1.15 1.1 1.05 Dmax 1 0.95 0.9 0.85 -25 0 25 50 75 100 125
1.15
1.1
1.05
Dmax
1
0.95
0.9
0.85
-25
0
25
50
75
100
125
150
Figure 8. Maximum Duty Cycle

Fig.10 Shutdown Feedback Voltage

1.15 1.1 1.05 Vsd 1 0.95 0.9 0.85 -25 0 25 50 75 100 125
1.15
1.1
1.05
Vsd
1
0.95
0.9
0.85
-25
0
25
50
75
100
125
150

Figure 10. Shutdown Feedback Voltage

Fig.12 Over Voltage Protection

1.15 1.1 1.05 Vovp 1 0.95 0.9 0.85 -25 0 25 50 75 100 125
1.15
1.1
1.05
Vovp
1
0.95
0.9
0.85
-25
0
25
50
75
100
125
150
Figure 12. Over Voltage Protection

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25 ° C)

Fig.13 Soft Start Voltage

1.15 1.1 1.05 Vss 1 0.95 0.9 0.85 -25 0 25 50 75 100 125
1.15
1.1
1.05
Vss
1
0.95
0.9
0.85
-25
0
25
50
75
100
125
150

Figure13. Soft Start Voltage

Fig.14 Drain Source Turn-on Resistance

2.5 2 1.5 Rdson ( ) 1 0.5 0 -25 0 25 50 75 100
2.5
2
1.5
Rdson
(
)
1
0.5
0
-25
0
25
50
75
100
125
150
Figure 14. Static Drain-Source on Resistance

KA5X03XX-SERIES

Package Dimensions

TO-220F-4L

KA5X03XX-SERIES Package Dimensions TO-220F-4L 16

KA5X03XX-SERIES

Package Dimensions (Continued)

TO-220F-4L(Forming)

KA5X03XX-SERIES Package Dimensions (Continued) TO-220F-4L(Forming) 17

KA5X03XX-SERIES

Package Dimensions (Continued)

8-DIP

KA5X03XX-SERIES Package Dimensions (Continued) 8-DIP 18

KA5X03XX-SERIES

Ordering Information

Product Number

Package

Marking Code

BV DSS

F

OSC

R

DS(on)

KA5H0365RTU

TO-220F-4L

5H0365R

650V

100kHz

 

3.6

KA5H0365RYDTU

TO-220F-4L(Forming)

 

KA5M0365RTU

TO-220F-4L

5M0365R

650V

67kHz

 

3.6

KA5M0365RYDTU

TO-220F-4L(Forming)

KA5L0365RTU

TO-220F-4L

5L0365R

650V

50kHz

 

3.6

KA5L0365RYDTU

TO-220F-4L(Forming)

KA5M0365RN

8-DIP

5M0365R

650V

67kHz

 

3.6

KA5L0365RN

8-DIP

5L0365R

650V

50kHz

 

3.6

Product Number

Package

Marking Code

BV DSS

F

OSC

R

DS(on)

KA5H0380RTU

TO-220F-4L

5H0380R

800V

100kHz

 

4.6

KA5H0380RYDTU

TO-220F-4L(Forming)

KA5M0380RTU

TO-220F-4L

5M0380R

800V

67kHz

 

4.6

KA5M0380RYDTU

TO-220F-4L(Forming)

KA5L0380RTU

TO-220F-4L

5L0380R

800V

50kHz

 

4.6

KA5L0380RYDTU

TO-220F-4L(Forming)

 

TU :Non Forming Type YDTU : Forming type

KA5X03XX-SERIES

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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