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BJT Modeling

Drift in the Base Region

If the net donor doping of the base is large enoughto allow the usual approximation n(xn) = N(xn), the balance of electron drift and diffusion currents at equilibrium requires

Since this field aids the transport of holes across the base region from emitter to collector, the transit time T, is reduced below that of a comparable uniform base transistor. Similarly, electron transport in an n-p-n is aided by the built-in field in the base. This shortening of the transit time can be very important in high-frequency devices

Gummel-Poon Model
this electric field aids the motion of the minority carriers in the base, so the current can be written as

where QE is the integrated majority carrier charge in the emitter, known as the emitter Gummel number. The, crux of the Gummel-Poon model is that the currents are expressed in terms of the net integrated charges in the base and emitter regions, and can easily handle nonuniform doping.

Current-voltage characteristics of BJTs: (a) Gummel plot of log of collector and base currents as a function of emitterbase forward bias; (b) d-c common- emitter current gain as a function of lc. For the intermediate range, we have ideal behavior where both Ic And Ibincrease exponentially with forward bias with ideality factor n = 1, leading to a current independent gain. For very low forward biases, the generation recombination (G-R) current increases IBand the gain drops. For high forward biases, high-level injection Effects cause the Ic to increase more slowly (n = 2) than IB, and the gain drops as 1 /Ic.

The BJT element statement

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