Si4425BDY

New Product

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V)
-30 0.019 @ VGS = -4.5 V - 9.1

FEATURES
ID (A)
-1 1.4

rDS(on) (W)
0.012 @ VGS = -10 V

D TrenchFETr Power MOSFET D Advanced High Cell Density Process

APPLICATIONS
D Load Switches - Notebook PCs - Desktop PCs

SO-8
S S S G 1 2 3 4 Top View P-Channel MOSFET 8 7 6 5 D D D D D

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS -2.1 2.5 1.6 -55 to 150 - 9.1 -50 -1.3 1.5 0.9 W _C -7.0 A

Symbol
VDS VGS

10 secs

Steady State
-30 "20

Unit
V

- 11.4

-8.8

THERMAL RESISTANCE RATINGS

Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 72000 S-21862Rev. B, 21-Oct-02 www.vishay.com Steady State Steady State RthJA RthJF

Symbol

Typical
40 70 15

Maximum
50 85 18

Unit

_C/W C/W

Si4425BDY
Vishay Siliconix
New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -11.4 A VGS = -4.5 V, ID = -9.1 A VDS = -15 V, ID = -11.4 A IS = -2.5 A, VGS = 0 V -50 0.010 0.015 29 -0.8 -1.2 0.012 0.019 -1.0 -3.0 "100 -1 -5 V nA mA m A W S V

Symbol

Test Condition

Min

Typ

Max

Unit

Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.5 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -15 V, VGS = -10 V, ID = -11.4 A 64 11 17 15 13 100 53 41 25 20 150 80 80 ns 100 nC

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics
50 VGS = 10 thru 5 V 40 I D - Drain Current (A) 4V I D - Drain Current (A) 40 50

Transfer Characteristics

30

30

20

20 TC = 125_C 25_C 0 -55 _C 3 4 5

10 3V 0 0 1 2 3 4 5

10

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

www.vishay.com

Document Number: 72000 S-21862Rev. B, 21-Oct-02

Si4425BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.025 r DS(on) - On-Resistance ( W ) 5000

Vishay Siliconix

Capacitance

VGS = 4.5 V 0.015 VGS = 10 V 0.010

C - Capacitance (pF)

0.020

4000 Ciss 3000

2000

0.005

1000 Crss

Coss

0.000 0 10 20 30 40 50

0 0 6 12 18 24 30

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12 A 8 1.6

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 12 A 1.4

r DS(on) - On-Resistance (W) (Normalized) 30 40 50 60 70 80

1.2

1.0

0.8

0 0 10 20 Qg - Total Gate Charge (nC)

0.6 -50

-25

25

50

75

100

125

150

TJ - Junction Temperature (_C)

Source-Drain Diode Forward Voltage

50 0.05

On-Resistance vs. Gate-to-Source Voltage

r DS(on) - On-Resistance ( W )

0.04 ID = 12 A 0.03

I S - Source Current (A)

TJ = 150_C 10

0.02

TJ = 25_C

0.01

1 0.0

0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Document Number: 72000 S-21862Rev. B, 21-Oct-02

www.vishay.com

Si4425BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8 30 25 ID = 250 mA 0.4 Power (W) 20

Single Pulse Power, Junction-to-Ambient

0.6 V GS(th) Variance (V)

0.2

15

0.0

10

-0.2

-0.4 -50

-25

25

50

75

100

125

150

0 10- 2

10- 1

1 Time (sec)

10

100

600

TJ - Temperature (_C)

Safe Operating Area

100 rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 10 dc

VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

0.2
Notes:

0.1 0.1 0.05

t1 PDM

0.02

t2 1. Duty Cycle, D =

t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted

Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec)

10

100

600

www.vishay.com

Document Number: 72000 S-21862Rev. B, 21-Oct-02

Si4425BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

Vishay Siliconix

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10

Document Number: 72000 S-21862Rev. B, 21-Oct-02

www.vishay.com