JP TECHNOSOFT

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DOCUMENT : NON-ISOLATED PHASE ALUMINIUM BUSBAR SYSTEM DESIGN Date:27/02/201

PROJECT :OMELECTRICAL
Sheet No:1 Panel ID: TSL Revision:R0

INPUT DATA:
A PF V Vmin f Alti Isc
tf

= = = = = = = = = = = = = = = = = = = = = = = = = = =

Electrical Load (3-phase, A.C.) Operating Power Factor Nominal Voltage Min. Continuous Operating Voltage System Frequency Altitude Fault Current Duration of Fault Ambient Temprature Final Temprature of Busbar Allowed Final Temp. at end of fault Busbar Enclosure Height Busbar Enclosure Depth Busbar Material Grade of Busbar Busbar Interleaving Busbar Insulating Material Busbar Spacing (c/c Ph-Ph) Distance Between Bus(Within Phase) Total Busbar width per Phase Total Busbar Height per Phase Busbar Support Interval Busbar Length Min. Shearing Strenght of Al. Temp. Coefficient of Resi. at 20 / No. of Busbar/Phase Busbar size = o C

= = = = = = = = = = = = = = = = = = = = = = = = = =

1600.0 Amp. 0.80 415.00 Volts 100.00 Volts 50.00 Hz 100.00 Mtr. 1600.0 kA 1.00 Sec 40.00 85.00 185.00
o o o C C C

Ta Tf Tend H D BBmat
BBgrade BBil BBinsul

300.00 mm 600.00 mm AL D 50 Withou PVC 130.00 mm 10.00 mm 30.00 mm 100.00 mm 600.00 mm 4.20 Mtr. 1500.0 kG/cm .00403 2.00 4" x 3/8" inch
2

S Sb at bt
Ssupport

Lbb SH O<20 N
BBsize

101.6 X 9.53 mmxmm

Panel Installation Place = Page 1/3

Indoor with ventilated

Developed By : www.jptechnosoft.com

JP TECHNOSOFT
AHMEDABAD Ph: 27603538 Email:jptechnosoft@rediffmail.com

DOCUMENT : NON-ISOLATED PHASE ALUMINIUM BUSBAR SYSTEM DESIGN Date:27/02/201

PROJECT :OMELECTRICAL
Sheet No:1 Panel ID: TSL Revision:R0

CALCULATION :
[A] MINIMUM BUSBAR AREA REQUIRED: Conductor Area Required Where, k = Busbar Material Constant Temp. Rise of Bus at time of fault = 1.1660 = 100.00 o C k*(1 + O<20 * Tf)*t = Isc*

0(t) * 100

= 625.58 sqmm

0(t)=

[B] CURRENT CARRYING CAPACITY CALCULATION: D1 D2 D3 D4 D5 D6 D7 D8 =Derating factor due to Ambient Temp. =Derating due to Altitude = Derating factor for Grade of Aluminium =Derating factor due to size of Enclosure =Derating due Skin Effect =Derating factor due to Proximity Effect =Derating factor due to Black Paint = Derating factor due to frequency variation Overall Derating Factor = = = = = = = = =

0.945 (Table 28.3,Ref.1) 1.000 1.000 (Table 30.6,Ref.1) 0.775 (Table 28.6,Ref.1) 1.000 0.990 (Table 7,Ref.2) 1.000 1.000 0.725 1798.127 Amp. 0.929 Amp./Sq.mm. 198.127 Amp.

Actual Current carrying capacity of Busbars = Actual Current Density of Busbars Current Carrying Capacity Margin [C] VOLTAGE DROP CALCULATION: Rdc(20) = Rdc(Tf) = Rac L Vd Yvd Vdiff = = = = = Rdc at 20 Deg. Cen. Rdc at Final Temp. of Busbar Rdc * Skin Effect ratio (Fig.28.13(a), Ref.1) Busbar Inductance (Fig. 28.24, Ref. 1) Voltage drop for Busbar Voltage drop for Middle Bus Voltage Imbalance = =

= 29.690 Micro-Ohm/Mtr. = .01873 Micro-Ohm/Mtr. = = = = =

0.000 Micro-Ohm/kM/Ph 0.110 Micro-Ohm/kM/Ph 0.739 Volts 0.000 Volts 0.309 %

[D] SHORT CIRCUIT WITHSTAND SUITABILITY: -4 2 16 * Isc * k1 * 10 Force on each Busbar Fm = S Where,

1745.087 KG

k1 = Space factor for rectangular busbar (Fig. 28.7, Ref. 1) S = c/c spacing between two phases Page 2/3 Developed By : www.jptechnosoft.com

JP TECHNOSOFT
AHMEDABAD Ph: 27603538 Email:jptechnosoft@rediffmail.com

DOCUMENT : NON-ISOLATED PHASE ALUMINIUM BUSBAR SYSTEM DESIGN Date:27/02/201

PROJECT :OMELECTRICAL
Sheet No:1 Panel ID: TSL Revision:R0 Fm * Ssupport 12 * M * N

Bending stress on the Busbar at time of fault = Where, M = Section Modulus of each Busbar N = No. of Busbar per phase [E] TEMPERATURE AT TIME OF FAULT : =

266.090

kg/sq.cm.

2 Temperature at the time of fault Isc * \ t = Antilog 3.41*104 * BBarea = *(Ta+233)

40.954

CONCLUSION :
1. Volt. Drop in Middle Phase = 0.00 Volt 2. Busbar Support Interval Is Suitable 3. Busbar Ampere Capacity Is Suitable 4. Remark:

Busbar Configuration:

References: (1) "Electrical Power Engineering, Reference & Applications Handbook" - by Mr. K C Agarwal (2) "Aluminium Busbar - A comprehensive Handbook" - By Thomas & Rata Page 3/3 Developed By : www.jptechnosoft.com