Physics for Electrical Engineers Prof. B.

Jalali
Homework #3

EE 2 Due: Feb.28, 4:00pm

Please place your homework in the box labeled EE2 Homework in the room 67-112 Engineering 4 Bldg
1. (a) Determine the conductivity of intrinsic silicon at 300K. (n i = 1010 cm-3, n = 1340 cm2/V-s, p = 461.3 cm2/V-s) (b) Repeat part (a) for a sample of silicon doped with 1017 cm-3 of phosphorous. (n i = 1010 cm-3, n = 825 cm2/V-s, p = 350 cm2/V-s)

2. A section of a silicon sample is 10 m in length and doped with 1015 cm-3 acceptor atoms at 300 K. A stream of minority carriers is injected at one end of the device, and the distribution of minority carriers in the sample is assumed to be linear, decreasing from a value of 1011 cm-3 to the equilibrium value at the terminal of the sample. (n i = 1010 cm-3, n = 1331 cm2/V-s) Determine the diffusion current density of electrons.

3. An abrupt PN junction germanium diode has N A = 1017 cm-3 and N D = 10 15 cm-3. Assuming all impurities are ionized and at 300 K. (n i = 2.5 x 1013 cm-3, = 16 x 8.85 x 10-14 F/cm) Determine, at thermal equilibrium: (a) The built-in voltage V bi. (b) The widths of depletion region, X no , X po. (c) The electric field at X = 0.

4. Assume abrupt junction PN diodes having N A = 1017 cm-3 and N D = 10 Calculate the built-in voltage at T = 300 K for: (a) A silicon diode. (n i = 1010 cm-3) (b) A germanium diode. (n i = 2.5 x 1013 cm-3)

14

cm-3.

5. A PN+ silicon diode has N D = 10 18 cm-3 and N A = 1016 cm-3, p = n = 1 s and A = 1.2 X 10-4 cm2. (n i = 1010 cm-3, n = 1258 cm2/V-s, p = 140 cm2/V-s) Determine at T = 300 K. (a) The reverse saturation current. (b) The current when the applied voltage in the forward direction is 0.7 V. (c) The current when the applied voltage in the reverse direction is 0.7 V.

6. A P+N junction diode has the following properties: N A = 1018 cm-3, N D = 1016 cm-3, A = 10-2 cm2, p = 2000 cm2/V-s, n = 4000 cm2/V-s, L P = 2 X 10-2 cm and L n = 3 X 10-2 cm. Given n i = 1013 cm-3 and the relative permittivity r = 16, determine: (a) The conductivities of the P and N regions. (b) The built-in voltage. (c) The reverse saturation current of the diode. (d) The diode current for a forward bias of 0.25 V. (e) The width of the depletion region when a reverse bias of 10 V is applied.