Silicon Junction FETs

XIAOSHENG
Symbol:
Drain

LH03 Series of Products interconvert:

www.datasheet4u.com

2SK30A

Gate
Source

Silicon N-Chinnel Junction FET

Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC electronic switch.

Package example:

Absolute Maximum Ratings (Ta=25)

Parameter Gate to Drain voltage Gate to Source voltage Gate current Allowable power dissipation Junction Temperature Storage Temperature Symbol VGDO VGSO IG PD Tj Tstg Ratings -50 -50 10 250 125 -55 to +125 Unit V V mA mW * Package
SC-59 SOT-23 TO-92S TO-92 TO-18

Electrical Characteristics (Ta=25)

Prameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittamce
Input capacitance (Common Source) Reverse transfer capacitance (Common Source)

Symbol IDSS IGSS VGDS VGS(OFF) | Yfs | Ciss Crss

Conditions VDS = 10V, VGS = 0V VGS= -30V, VDS = 0V IG = -100AVDS = 0V VDS = 10V, ID = 0.1A VDS= 10V GS= 0V= 1KHZ V f VDS= 10V GS= 0V = 1MHZ V f

min 0.3 -50 -0.4 1.2

typ

max 6.5 -1.0 -5.0

Unit mA nA V V mS pF pF

8.2 2.6

IDSS Rank Classification

Runk IDSS(mA) Marking Symbol R 0.3 to 0.75 035D O 0.6 to 1.4 035E Y 1.2 to 3.0 035F GR 2.6 to 6.5 035G

Xiaosheng Electronic & Telechnology CO. ,LTD.

Tel: 86-021-64859219 Fax: 86-021-64859219 www.on-ele.org Email:xiaosheng_sh@126.com Room 206 3rd building 195-16 Tianlin RD. Shanghai China