This document contains questions and answers about semiconductor devices and transistor circuits. It covers topics such as atomic structure, semiconductors, diodes, rectifiers, voltage regulators, Zener diodes, and bipolar junction transistors. Key points addressed include how diodes and transistors work, biasing techniques, transistor characteristics, and applications of semiconductor devices in circuits.
This document contains questions and answers about semiconductor devices and transistor circuits. It covers topics such as atomic structure, semiconductors, diodes, rectifiers, voltage regulators, Zener diodes, and bipolar junction transistors. Key points addressed include how diodes and transistors work, biasing techniques, transistor characteristics, and applications of semiconductor devices in circuits.
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This document contains questions and answers about semiconductor devices and transistor circuits. It covers topics such as atomic structure, semiconductors, diodes, rectifiers, voltage regulators, Zener diodes, and bipolar junction transistors. Key points addressed include how diodes and transistors work, biasing techniques, transistor characteristics, and applications of semiconductor devices in circuits.
Авторское право:
Attribution Non-Commercial (BY-NC)
Доступные форматы
Скачайте в формате PPT, PDF, TXT или читайте онлайн в Scribd
Q: An atom consist of A: one nucleus and one or more electrons; protons, electrons and neutrons Q: The nucleus of an atom is made up of A: protons and neutrons Q: The atomic number of silicon is A: 14 Q: The atomic number of germanium is A: 32 Q: The valence shell in a silicon atom has the letter designation of A: M Q: Valence electrons are A: in the most distant orbit from the nucleus Q: A positive ion is formed when A: a valence electron breaks away from the atom Q: The most widely used semiconductive material in electronic devices is A: silicon Q: The energy bond in which free electrons exist is the A: conduction bond Q: Electron-hole pairs are produced by A: thermal energy Q: Recombination is when A: an electron falls into a hole Q: In a semiconductor crystal, the atoms are held together by A: the interaction of valence electrons, forces of attraction and covalent bonds Q: Each atom in a silicon crystal has A: eight valence electrons, four of its own and four shared Q: The current in a semiconductor is produced by A: both electrons and holes Q: In an intrinsic semiconductor A: the free electrons are thermally produced and there are as many electrons as there are holes Q: The difference between insulator and a semiconductor is A: a wider energy gap between the valence bond and the conductive bond, the number of free electrons, the atomic structure Q: The process of adding an impurity to an intrinsic semiconductor is called A: doping Q: A trivalent impurity is added to silicon to create A: p-type semiconductor Q: The purpose of a pentavalent impurity is to A: increase the number of free electrons Q: The majority carriers in an n- type semiconductor are A: conduction electrons Q: Holes in an n-type semiconductor are A: minority carriers that are thermally produced Q: A pn junction is formed by A: the boundary of a p-type and an n-type material Q: The depletion region is created by A: ionization, diffusion and recombination Q: The depletion region consists of A: positive and negative ions and no majority carriers Q: The term bias means A: a dc voltage is applied to control the operation of the device Q: To forward bias a pn junction A: an external voltage is applied that is positive at the anode and negative at the cathode or an external voltage is applied that is positive at the p region and negative at the n region Q: When a pn junction is forward bias, A: the current is produced by both holes and electrons Q: Although current is blocked in reverse bias, A: there is very small current due to minority carriers Q: For a silicon diode, the value of the forward bias voltage is typically A: greater than 0.7 V Q: When forward-biased, a diode A: conducts current Q: When a voltmeter is placed across a forward-biased diode, it will read a voltage approximately equal to A: the diode barrier potential Q: A silicon diode is in series with a 1 kO resistor and a 5 V battery. If the anode is connected to the positive battery terminal, the cathode voltage with respect to the negative battery terminal is A: 4.3 V Q: The positive lead of the ohmmeter is connected to the anode of a diode and the negative lead is connected to the cathode. The diode is A: forward-biased Q: The average value of the half- wave rectified voltage with a peak value of 200 V A: 63.7 V Q: When a 60 Hz sinusoidal voltage is applied to the input of a half-wave rectifier, the output frequency is A: 60 Hz Q: The peak value of the input to half-wave rectifier is 10 V. The approximate peak value of the output is A: 9.3 V Q: When a 60 Hz sinusoidal voltage is applied to the input of a full-wave rectifier the output frequency is A: 120 Hz Q: The total secondary voltage in a center-tapped full-wave rectifier is 125 V rms. Neglecting the diode drop, the rms voltage output is A: 62.5 V Vp(out) = 0.5 Vp(in) Q: When the peak output voltage is 100 V, the PIV for each diode in a center-tapped full-wave rectifier is (neglecting the diode drop) A: 200 V PIV >/= 2 Vp Q: When the rms output voltage of a full-wave bridge rectifier is 20 V, the peak inverse voltage across the diode is (neglecting the diode drop) A: 28.3 V PIV = Vp
Q: The ideal dc output voltage of a capacitor filter is equal to A: the peak value of the rectified voltage Q: A certain power supply filter produces an output with a ripple of 100 mV peak-to-peak and a dc value of 20 V. The ripple factor is A: 0.005 r = V r(p-p) / V (dc) r = 100 mV / 20 V r = 0.005 Q: A 60 V peak full-wave rectified voltage is applied to a capacitor filter. If f = 120 Hz, R L = 10 kO and C = 10 F, the ripple voltage is A: 5.0 V V r(p-p) = Vm / (fR L C) = 60 / (120 x 10k x 10) = 5 V Q: If the load resistance of a capacitor-filtered full-wave rectifier is reduced, the ripple voltages A: increases V r(p-p) = Vm / (fR L C) Q: A 10 V(p-p) sinusoidal voltage is applied across a silicon diode and series resistor. The maximum voltage across the diode is A: 4.3 V Q: If the input voltage to a tripler has an rms value of 12 V, the dc output voltage is approximately A: 32.4 V Vdc = 2\2 V rms / t or use V rms = 1.11 V dc Q: If one of the diodes in a full wave bridge rectifier opens, the output is A: a half-wave rectified signal Q: What happens to one of the diodes in a full-wave bridge rectifier if it is observed that the output has a 60 Hz ripple A: there is an open diode Q: The cathode of a Zener diode in a voltage regulator is normally A: more positive than the anode Q: If a Zener diode has a Zener voltage of 3.6 V, it operates in A: Zener breakdown Q: For a certain 12 V Zener diode, a 10 mA change in Zener current produces a 0.1 V change in Zener voltage. The Zener impedance for this current change is A: 10 O Zz = A Vz / A Iz = 0.1 V / 10 mA = 10 O Q: The data sheet for a particular Zener gives Vz = 10 V and Izt = 500 mA, Zz for this condition is A: 20 O Zz = Vz / Iz = 10 V / 500 mA = 20 O Q: Line regulation is determined by A: change in output voltage and input voltage Line Reg. = AVout / AVin x 100%
Q: Load regulation is determined by A: changes in load current and output voltage Load Reg. = (Vnl Vfl)/Vfl x 100% Therefore, load regulation is the same as voltage regulation. Q: A no-load condition means that A: the load has infinite resistance or the load has zero resistance Q: A varactor diode exhibits A: a variable capacitance that depends on the reverse voltage Q: An LED A: emits light when forward- biased Q: Compared with a visible red LED, an infrared LED A: produces light with longer wavelengths Q: The internal resistance of a photodiode A: decreases with light intensity when reversed -biased Q: A diode that has a negative resistance characteristics is the A: tunnel diode Q: An infrared LED is optically coupled to a photodiode. When the LED is turned off, the reading on an ammeter in series with a reversed-biased photodiode will A: decrease Q: In order for a system to function properly, the various types of circuits that make up the system must A: properly biased, properly connected, and properly interfaced Q: The three terminals of a bipolar junction transistor are called A: base, emitter and collector Q: In a pnp transistor, the p regions are A: emitter and collector Q: For operation as an amplifier, the base of an npn transistor must be A: positive with respect to the emitter Q: The emitter current must be A: greater than the base current and the collector current Q: The |dc of a transistor is its A: current gain Q: If Ic is 50 times larger than Ib, then |dc is A: 50 Q: If |dc is 100, the value of odc is A: 0.99 Q: The approximate voltage across the forward-biased base- emitter junction of a silicon BJT is A: 0.7 V Q: The bias condition for a transistor to be used as a linear amplifier is A: forward-reverse Q: If the output of a transistor amplifier is 5 V rms and the input is 100 mV rms, the voltage gain is A: 50 Q: When operated in cutoff and saturation, the transistor acts like A: switch Q: In cut0ff, Vce is A: maximum and equal to Vcc Q: In saturation, Vce is A: minimum Q: To saturate a BJT A: Ib > Ic(sat) / |dc Q: Once in saturation, a further increase in base current will A: not affect the collector current Q: If the base-emitter junction is open, the collector voltage is A: Vcc Q: The maximum value of a collector current in a biased transistor is A: Ic(sat) Q: Ideally, a dc load line is straight line drawn on the collector characteristic curves between A: Vce(cut-off) and Ic(sat) Q: If a sinusoidal voltage is applied to the base of a biased npn transistor and the resulting sinusoidal collector voltage is clipped near zero volts, the transistor is A: being driven into saturation and operating nonlinearly Q: the dc beta h(FE) for a given type of transistor A: varies with temperature and from device to device Q: The disadvantage of base bias is that A: it is too beta dependent Q: Emitter bias is A: essentially dependent of |dc and provide a stable bias point Q: In an emitter bias circuit R(B) = 2.7 kO and V(EE) = 15 V. The emitter current is A: cannot be determined unless Vcc is given Q: The input resistance at the base of the biased transistor depends mainly on A: |dc and R(E) Q: In a certain voltage divider biased npn transistor, V(B) is 2.95 V. The dc emitter voltage is approximately A: 2.25 V
V(B) = V(BE) + V(EE) V(EE) = 2.95 V 0.7 V = 2.25 V Q: Voltage divider bias can be essentially independent of __
A: |dc Q: Collector feedback is based on the principle of A: negative feedback Q: In a voltage-divider biased npn transistor, if the upper voltage- divider resistor (the one connected to the Vcc) opens A: the transistor goes into cutoff Q: In a voltage-divider biased npn transistor, if the lower voltage- divider resistor (the one connected to the ground) opens A: the transistor may be driven into saturation Q: A small-signal amplifier
A: uses only a small portion of its load line Q: The parameter h(FE) corresponds to A: |dc Q: If the dc emitter current in a certain transistor amplifier is 3 mA, the approximate value of re is A: 8.33 O
re = 25 mV / I(E) = 25 mV / 3 mA = 8.33 O Q: For a common-collector amplifier, R(E) = 100 O, re = 10 O, and |ac = 150. The input resistance at the base is A: 16.5 kO Rin(base) = |[R(E) + re] = 150(100 + 10) = 16.5 k O Q: A certain common emitter amplifier has a voltage gain of 100. If the emitter bypass capacitor is removed, A: the voltage gain will decrease with bypass capacitor Av = Rc / re without bypass capacitor Av = Rc / [re + R(E)] Q: For a common-emitter amplifier, Rc = 1 kO, R(E) = 390O, re = 15 O, and |ac = 15075. Assuming that R(E) is completely bypassed at the operating frequency, the voltage gain is A: 66.7 Av = Rc / re = 1 k / 15 = 66.7 Q: In a certain common-collector circuit, the current gain is 50. The power gain is approximately A: 50 x Av or just 50 Q: In a darlington configuration, each transistor has an ac beta of 125. If R(E) is 560 O, the input resistance is A: 8.75 MO Zi = R(B) //[ri + |(D)R(E)] Zi ~ |(D)R(E) ~ (125) 2 x 560 O ~ 8.75 MO
Q: The input resistance of a common-base amplifier is A: very low Q: A CE amplifier is driving a 10kO load. If Rc = 2.2 kO and re = 10O, the voltage gain is approximately A: 180 Av = -(Rc//ro) / re = -(10 k // 2.2 k) / 10 = 180.33
Q: Each stage of a four-stage amplifier has voltage gain of 15, the overall gain is A: 50,625 Av(t) = 15(15)(15)(15) = 50,625 Q: When the Q-point of an inverting class A amplifier is closer to saturation than cutoff and the input is gradually increased, clipping on the output will first appear on A: the negative peaks Q: The saturation value of ac collector current for an amplifier with an ac collector resistance of 3 kO and Q-point values of Icq = 2 mA and Vceq = 3 V is A: 3 mA Vce = Vcc IcRc; Vcc = 9 V Ic(sat) = Vcc / Rc = 3mA
Q: If re = 18O and Rc = 500 O in a class A amplifier, the large voltage gain is A: 27.8 Av = Rc / re = 500 / 18 = 27.78 Q: A class A amplifier is biased with a centered Q-point at Vceq = 5 V and Iceq = 10 mA. The maximum output power is A: 25 mW Po(max) = 0.5 VceqIcq = 0.5 x 5 x 10 m = 25 mW Q: A certain class A amplifier has a current gain of 75 and a voltage gain of 50. The power gain is A: 3750 Ap = AvAi = 50(75) = 3750 Q: The transistors in class B are biased A: right at cutoff Q: The emitters of certain class B push-pull amplifier have a Q- point value of 10 V. If Rc is 50 O, the value Ic(sat) is A: 0.2 A Ic(sat) = 10 / 50 = 0.2 A Q: The power dissipation of a class C amplifier is normally A: very low Q: The JFET is A: a unipolar device and also a voltage-controlled device Q: The channel of a JFET is between the A: drain and source Q: A JFET always operates with A: the gate-to-source pn junction reversed-biased Q: For Vgs = 0 V, the drain current becomes constant when Vds exceeds A: Vp or pinch-off voltage Q: The constant current region of an FET lies between A: pinch-off and breakdown Q: Idss is A: the maximum possible current
Q: Drain current in the constant- current region increases when A: the gate-to-source bias voltage decreases Q: In a certain FET circuit, Vgs = o V, Vdd = 15 V, Idss = 15 mA, and Rd = 470 O. If Rd is decreased to 330 O, Idss is A: 15 mA (it is unaffected) Q: At cutoff, the JFET channel is A: completely closed by the depletion region Q: A certain JFET data sheet gives Vgs(off) = -4 V. The pinch-off voltage, Vp, is A: +4 V Q: If a JFET has a pinch-off voltage of a positive value, it is a __ - channel A: N Q: For a certain JFET, Igss = 10 nA at Vgs = 10 V. The input resistance is A: 1000 MO Rin = Vgs / Igs = 10 / 10 nA = 1000 MO
Q: For a certain p-channel JFET, Vgs(off) = 8 V. The value of Vgs for an approximate midpoint bias is A: 2.43 V Q: A MOSFET differs from a JFET mainly because A: the JFET has a pn junction Q: A certain D-MOSFET is biased at Vgs = 0 V. Its data sheet specifies Idss = 20 mA and Vgs(off) = -5 V. The value of the drain current is A: 20 mA Id = Idss [1 Vgs / Vgs(off) ] 2
Q: An n-channel D-MOSFET with a positive Vgs is operating in A: the enhancement mode Q: A certain p-channel E-MOSFET has a Vgs(th) = -2 V. If Vgs = 0 V, the drain current is A: 0 A
Q: A TMOSFET is a special type A: E-MOSFET Q: In a common source amplifier, the output voltage is A: 180 0 out of phase with the input and it is taken at the drain Q: In a certain common source (CS) amplifier, Vds is 3.2 Vrms and Vgs = 280 mV rms. The voltage gain is A: 11.4 Av = Vgs / Vds = 3.2 / 280 m = 11.4 Q: In a certain CS amplifier, Rd = 1 kO, Rs = 500O, Vdd = 10 V, and gm = 4500 S. if the source resistor is completely bypassed, the voltage gain is
A: 4.5 Av =gmRd = 4500 x 1k = 4.5 Q: Ideally, the equivalent circuit of a FET contains A: a current source between drain and source terminals Q: The value of the current source in the ideal equivalent circuit of an FET is dependent on the A: transconductance and gate-to- source voltage Q: A certain common source amplifier has a voltage gain of 10. If the source bypass capacitor is removed, A: the voltage gain will decrease Q: A CS amplifier has a load resistance of 10 k O and Rd = 820 O. If gm = 5 mS and Vin = 500 mV, the output signal voltage is A: 1.89 V Av = Vo / Vi Av = gm (Rd // ro) / 2 Q: If the load resistance in a CS amplifier is removed, the output voltage will A: increase Q: A certain common drain (CD) amplifier with Rs = 1 kO has a transconductance of 6000 S. The voltage gain is A: 0.86 Av = gmRs / (1 + gmRs)
Q: The data sheet for the transistor used in a CD amplifier specifies Igss = 5 nA at Vgs = 10 V. If the resistor from the gate to ground, Rg is 50 M O, the total input resistance is approximately A: 48.78 M O Rin = Rg //(Vgs / Igss) Q: The common gate (CG) amplifier differs from both CS and CD configurations in that it has a A: much lower input resistance Q: If you are looking for good voltage gain and high input resistance, you must use a A: CS amplifier Q: For small-signal operation, an n-channel JFET must be biased at A: -Vgs(off) < Vgs < 0 V Q: Two FET amplifiers are cascaded. The first has a voltage gain of 5 and the second has a voltage gain of 7. The overall voltage gain is A: 35 Av(t) = Av1(Av2) = 5 (7) = 35 Q: If there is an internal open between drain and source in a CS amplifier, the drain voltage is equal to A: Vdd Q: The low frequency response of an amplifier is determined in part by A: the coupling capacitors Q: The high frequency response of an amplifier is determined in part by A: the internal transistor capacitances Q: The bandwidth of an amplifier is determined by A: the critical frequencies Q: The gain of an amplifier decreases by 6 dB when the frequency is reduced from 1 kHz to 10 Hz. The roll-off is A: -3 dB / decade 10 n = log (1 k /10) n = 2 Roll-off = -6 dB / 2 decade = -3 dB/ decade Q: The gain of a particular amplifier at a given frequency decreases by 6 dB when the frequency is doubled. The roll-off is A: -6 dB / octave Q: The Miller input capacitance of an amplifier is dependent partly on A: the voltage gain
Q: An amplifier has the following frequencies: 1.2 kHz, 950 Hz, and 8.5 kHz. The bandwidth is A: 6800 Hz
Q: Ideally, the midrange gain of an amplifier A: remains constant with frequency Q: The frequency at which the amplifiers gain is 1 is called
A: unity-gain frequency Q: When the voltage gain of an amplifier is increased, the bandwidth A: decreases Q: If the fr of the transistor used in a certain amplifier is 75 MHz and the bandwidth is 10 MHz, the voltage gain must be A: 7.5 fr = Av(mid)BW Q: In the midrange of an amplifiers bandwidth, the peak output voltage is 6 V. At the lower critical frequency, the peak voltage output is
A: 4.24 V Vp(lc) = Vp(mid) / \2
Q: At the upper critical frequency, the peak output voltage of a certain amplifier is 10 V. The peak voltage in the midrange of an amplifier is A: 14.14 V Vp(uc) = Vp(mid) / \2
Q: In the step response of a non- inverting amplifier, a longer rise time means A: a narrower bandwidth Q: The lower critical frequency of a direct-coupled amplifier with no bypass capacitor is A: 0 Hz Q: A thyristor has A: 3 pn junctions Q: Common types of thyristor include A: diacs and triacs Q: A Shockley diode turns on when the anode and cathode voltage exceeds A: the forward breakover voltage Q: Once it is conducting, a Shockley diode can be turned off by A: reducing the current below a certain value and disconnecting the anode voltage Q: An SCR differs from the Shockley diode because A: it has a gate terminal Q: An SCR can be turned off by A: forced commutation and anode current interruption but not with a negative pulse on the gate
Q: In the forward-blocking region, the SCR is A: in the off state Q: The specified value of holding current for an SCR means that A: the device will turn on when the anode current falls below this value Q: The SCS differs from the SCR because A: it has two gate terminal Q: The SCS can be turned on by A: a positive pulse in the cathode gate or a negative pulse on the anode gate Q: The SCS can be turned off by A: a negative pulse on the cathode gate and the positive pulse on the anode and reducing the anode current to below the holding value Q: The diac is A: a thyristor, a bilateral, two- terminal device and also like two parallel Shockley diodes in reverse directions Q: UJT has the characteristics of A: intrinsic standoff ratio, negative resistance and peak- point voltage but it is not exhibit bilateral conduction Q: In a phototransistor, the base current is A: directly proportional to light Q: The PUT is A: triggered on and off by the gate-to-cathode voltage Q: An integrated circuit (IC) op- amp has A: two inputs and one output Q: Op-amps has A: high gain, high input impedance and low output impedance. It is not necessarily low power. Q: A differential amplifier A: is part of an op-amp and has two outputs Q: When a differential amplifier is operated single-ended, A: one input is grounded and a signal is applied to the other Q: In the differential mode, A: opposite polarity signals are applied to the inputs Q: In the common mode, A: an identical signal appears on both inputs Q: Common mode gain is A: very low Q: Differential gain is A: very high Q: If Av(d) = 3500 and Acm = 0.35, the CMRR is A: 10,000 or 80 dB CMRR = Av(d) / Acm = 3500 / 0.35 = 10,000 Q: The most realistic value for open-loop gain of an op-amp is A: 100,000
Q: A certain op-amp has bias currents of 50 A and 49.3 A. The input offset current is A: 700 nA Ios = |I1 I2|
Q: The output of a particular op- amp increases 8 V and 12 s. The slew rate is A: 0.67 V/s Slew rate = AV / At Q: The purpose of offset nulling is A: to zero the output error voltage Q: For an op-amp with negative feedback, the output is A: fed back to the inverting input Q: The use of negative feedback A: reduces the voltage gain of an op-amp and makes linear operation possible Q: Negative feedback __ the input impedance and bandwidth A: increases Q: A certain non-inverting amplifier has an Ri of 1 k O and an Rf of 100 k O. The closed loop gain is A: 101 Av = 1 + Rf / Ri Q: If the feedback resistor of a non-inverting amplifier is open, the voltage gain A: increases Q: A certain inverting amplifier has a closed loop gain of 25. The op-amp has an open-loop gain of 100,000. If another op-amp with an open-loop gain of 200,000 is substituted in the configuration, the closed loop gain A: remains at 25 Q: A voltage follower A: has a gain of 1, is non-inverting and has no feedback resistor Q: The open-loop gain of an op- amp is always A: greater than the closed loop gain Q: The bandwidth of an ac amplifier having a lower critical frequency of 1 kHz and an upper critical frequency of 10 kHz is A: 9 kHz BW = fu - fl Q: The bandwidth of a dc amplifier having an upper critical frequency of 100 kHz is A: 100 khz Q: The frequency at which the open-loop gain is 1 is called A: the unity-gain frequency Q: the mid-range open-loop gain of an op-amp A: extends from 0 Hz to the upper critical frequency Q: Phase shift of an op-amp is caused by A: the internal RC circuits Q: Each RC circuit in an op-amp A: cause the gain to roll off at 6 dB / octave or 20 dB / decade Q: When the negative feedback is used, the gain bandwidth product of an op-amp A: stays the same Q: If the certain op-amp has mid- range open-loop gain of 200,000 and a unity gain frequency of 5 MHz, the gain-bandwidth product is A: 5 MHz
Q: If a certain op-amp has a closed-loop gain of 20 and an upper critical frequency of 10 MHz the gain-bandwidth product is A: 200 MHz or 10 MHz if upper critical frequency is the unity- gain frequency Q: Positive feedback occurs when A: the output signal is fed back to the input in-phase with the input signal or when the total phase shift through the op-amp and feedback circuit is 360 0 Q: For a closed loop op-amp circuit to be unstable A: there must be positive feedback and the loop gain must be greater than 1 Q: The amount of additional phase shift required to make the total phase shift around a closed loop equal to zero is called A: phase margin Q: For a given value of a closed- loop gain, a positive phase margin indicates A: a stable condition Q: The purpose of a phase-lag compensation is to A: make the op-amp high stable at low values of gain Q: In a zero-level detector, the output changes state when the input A: crosses zero Q: The zero-level detector is one application of a A: comparator Q: Noise on the input of the comparator can cause the output to A: change back and forth erratically between two states Q: The effects of noise can be reduced by A: using positive effects and using hysteresis Q: A comparator with hysteresis A: has two trigger point Q: In a comparator with hysteresis A: a portion of the output is fed back to the non-inverting input Q: Using output bounding in a comparator A: limits the output level Q: A window comparator detects when A: the input is between two specified limits Q: A summing amplifier can have A: any number of inputs Q: If the voltage gain for each input of a summing amplifier with a 4.7 kO feedback resistor is unity, the input resistor must have a value of A: 4.7 k O Q: An averaging amplifier has five inputs. The ratio Rf / Ri must be A: 0.2 Q: In a scaling adder, the input resistors are A: each proportional to the weights of its inputs Q: In an integrator, the feedback element is a A: capacitor Q: For a step input, the output of an integrator is A: a ramp Q: The rate of change of an integrators output voltage in response to a step input is set by A: the RC time constant, the amplitude of the step input and the current through the capacitor Q: In a differentiator, the feedback element is a A: resistor Q: The output of a differentiator is proportional to A: the RC time constant and the rate at which the input is changing Q: When you apply a triangular waveform to the input of a differentiator, the output is A: a square waveform Q: To make a basic instrumentation amplifier, it takes A: three op-amp and seven resistors Q: Typically, an instrumentation amplifier has an external resistor used for A: setting the voltage gain Q: Instrumentation amplifier are used in A: high-noise environments Q: Isolation amplifiers are used primarily in A: applications where there are high voltages and sensitive equipment and applications where human safety is concerned Q: The three sections of a basic amplifier are A: input, output and power Q: The sections of most isolation amplifier are connected by A: transformers Q: The characteristic that allows an isolation amplifier to amplify small signal voltages in the presence of much greater noise voltages is its A: CMRR Q: The term OTA means A: operational transconductance amplifier Q: In an OTA, the transconductance is controlled by A: a bias current Q: The voltage gain of an OTA circuit is set by A: the transconductance and the load resistor Q: An OTA is basically a A: voltage-to-current amplifier Q: The operation of a logarithmic amplifier is based on A: the logarithmic characteristic of a pn junction Q: If the input to a log amplifier is x, the output is proportional to A: nx or 2.3 log 10 x Q: If the input to an antilog amplifier is x, the output is proportional to A: e 1 Q: The logarithm of the product of two numbers is equal to the A: sum of the logarithms of each of the numbers Q: If you subtract ln y from ln x you get A: ln (x/y) Q: An oscillator differs from an amplifier because A: it requires no input signal Q: All oscillators are based on A: positive feedback Q: One condition for oscillation is A: a phase shift around the feedback loop of 0 0 Q: A second condition for oscillation is A: a gain of 1 around the feedback loop Q: In a certain oscillator, Av = 50. The attenuation of the feedback circuit must be A: 0.02 Q: For an oscillator to properly start, the gain around the feedback loop must initially be A: greater than 1 Q: In a Wien-bridge oscillator, if the resistances in the positive feedback circuit are decreased, the frequency A: increase Q: The Wien-bridge oscillators positive feedback circuit is A: a lead-lag circuit Q: A phase-shift oscillator has A: three RC circuits Q: Colpitts, Hartley and Clapp are names that refer to A: types of LC oscillator Q: An oscillator whose frequency is changed by a variable dc voltage is known as A: a VCO Q: the main feature of a crystal oscillator is A: stability Q: The operation of a relaxation oscillator is based on A: the charging and discharging of a capacitor Q: Clock is an (input, output, either an input or output, neither an input nor an output) of a 555 timer. A: neither an input nor an output Q: A type of circuit that is capable of locking onto or synchronizing with an incoming signal is called A: a phase-locked loop Q: In the case of a line regulation, when the input voltage changes, the __ stays constant. A: output voltage Q: In the case of a load regulation, when the ___ changes the output voltage stays constant. A: load current Q: What the parts of a voltage regulator? A: control element, sampling circuit, error detector, and reference voltage. Voltage follower is not a part of a voltage regulator. Q: The basic difference between a series regulator and a shunt regulator is A: the position of the control element Q: In a basic series regulator, Vout is determined by A: the sample circuit and the reference voltage Q: The main purpose of a current limiting in a regulator is A: protection of the regulator from excessive current Q: In a linear regulator, the control transistor is conducting A: in a small part of time, half the time, and only when the current is excessive Q: In a switching regulator, the control transistor is conducting A: part of the time Q: The LM 317 is an example of an IC A: three-terminal negative voltage regulator and a switching regulator Q: An external pass transistor is used for A: increasing the current that the regulator can handle Q: The term pole in the filter technology refers to A: one complete active filter Q: An RC circuit can produce a roll-off rate of A: -20 dB / decade or 6 dB / octave Q: A bandpass response has A: two critical frequencies Q: the lowest frequency passed by a low-pass filter is A: 0 Hz Q: the quality factor of a bandpass filter depends on A: the center frequency and the bandwidth Q: The damping factor of an active filter determines A: the response characteristics Q: A maximally flat frequency response is known as A: Butterworth Q: The damping factor of a filter is set by A: the negative feedback circuit Q: The number of poles in a filter affects the A: roll-off rate Q: Sallen-key filters are A: second-order filters Q: When filters are cascaded, the roll-off rate A: increases Q: When a low pass and a high pass filter are cascaded to get a band-pass filter, the critical frequency of the low-pass filter must be A: greater than the frequency of the high-pass filter Q: A state-variable filter consists of A: a summing amplifier and two integrators Q: When the gain of the filter is minimum at its center frequency, it is A: a band-pass filter or a notch filter