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..

,
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E-mail: atsel@ya.ru
,
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.

.
. VD
(. 1 [1, 2]).
[3],
.
, ,
.
[2]
, 1/L1/2, 1/L,
.


.
p-n-
.

,
,
3/ 2

eE
2F
2F
U gen v0
I
exp
(1)
0

,
v0
2 eE v0
2 eE v0
I0(x) , F , E
, v0 .
, :
I Dgen eWLU gen ,
(2)
L , W .
L, (1) (2) , IDgen ~ L-1/2.

.
VD (. 2).

.

,
(. 1 (), 3).

.
. 2


1/L1/2.
. 3
.
VD ,
.

()
()
. 1. ( [2] () ()) dox = 8,5 ,
ox = 3.9, L = 0,44 , 10713 2/(Bc), Cit = 0,
( ) 0,2, 0,5, 1, 1,5, 2 , vopt = 2,1107 /, RC = 450

. 2.
1/L1/2 VG = 0, dox = 8,5 , ox = 3,9, Cit = 0
VD: 1,5 ( ), 1,0 (),
0,5 (), 0,25 ().
[2]

. 3.
[2]

dox = 8,5 , ox = 3.9, L = 3 ,
VG = 0 , 10713 2/(Bc), Cit = 0,
RC = 2000


.. .

1. Meric, I. et al., Current saturation in zero-bandgap, top-gated graphene field- effect


transistors, Nature Nanotech., 2008, 3, 654659.
2. Meric, I. et al., "Graphene field-effect transistors based on boron nitride gate
dielectrics," International Electron Devices Meeting, 2010, pp. 23.2.1-23.2.4.