ESE319 Introduction to Microelectronics

1
2008 Kenneth R. Laker, update 12Oct10 KRL
High Frequency BJT Model
ESE319 Introduction to Microelectronics
2
2008 Kenneth R. Laker, update 12Oct10 KRL
Gain of 10 Amplifier Non-ideal Transistor
Gain starts dropping at about 1MHz.
Why!
Because of internal transistor
capacitances that we have ignored
in our models.
ESE319 Introduction to Microelectronics
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2008 Kenneth R. Laker, update 12Oct10 KRL
Sketch of Typical Voltage Gain Response
for a CE Amplifier

A
v

( dB)
f ( Hz)
(log scale)
f
L
f
H
Low
Frequency
Band
Due to exter-
nal blocking
and bypass
capacitors
Midband
ALL capacitances are neglected
3dB
20log
10

A
v

( dB)
High
Frequency
Band
Due to BJT parasitic
capacitors C

and C

BW=f
H
f
L
f
H
GBP=

A
v

BW
ESE319 Introduction to Microelectronics
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2008 Kenneth R. Laker, update 12Oct10 KRL
High Frequency Small-signal Model
Two capacitors and a resistor added.
A base to emitter capacitor, C

A base to collector capacitor, C

A resistor, r
x
, representing the base
terminal resistance (r
x
<< r

)
C
j
=
C
j0
(1+
V
CB
V
0c
)
m
C
n
=C
de
+C
je0
(1
V
BE
V
0e
)
m
C
de
+2C
je0
C
j
C
n
r
x
C
de
=t
F
g
m

F
= forward-base transit time
SPICE
CJC = C
0
CJE = C
je0
TF =
F
RB = r
x
ESE319 Introduction to Microelectronics
5
2008 Kenneth R. Laker, update 12Oct10 KRL
High Frequency Small-signal Model
The internal capacitors on the transistor have a strong effect on
circuit high frequency performance! They attenuate base signals,
decreasing v
be
since their reactance approaches zero (short circuit)
as frequency increases.
As we will see later C

is the principal cause of this gain loss at

high frequencies. At the base C

looks like a capacitor of value

k C

connected between base and emitter, where k > 1 and may

be >> 1.
This phenomenon is called the Miller Effect.
ESE319 Introduction to Microelectronics
6
2008 Kenneth R. Laker, update 12Oct10 KRL
Frequency-dependent beta h
fe
The relationship i
c
= i
b
does not apply at high frequencies f > f
H
!
Using the relationship i
c
= f(V

) find the new relationship
between i
b
and i
c
. For i
b
(using phasor notation (I
x
& V
x
) for
frequency domain analysis):
I
b
=
(
1
r
n
+sC
n
+sC
j
)
V
n

short-circuit
current
where r
x
0 (ignore r
x
)
@ node B':
NOTE: s = + j, in sinusoidal steady-state s = j.
ESE319 Introduction to Microelectronics
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2008 Kenneth R. Laker, update 12Oct10 KRL
I
b
=
(
1
r
n
+sC
n
+sC
j
)
V
n
I
c
=( g
m
sC
j
)V
n
Leads to a new relationship between the I
b
and I
c
:
h
fe
=
I
c
I
b
=
g
m
sC
j
1
r
n
+s C
n
+s C
j
(ignore r
o
)
@ node C:
Frequency-dependent h
fe
or beta
ESE319 Introduction to Microelectronics
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2008 Kenneth R. Laker, update 12Oct10 KRL
Frequency Response of h
fe
h
fe
=
g
m
sC
j
1
r
n
+s C
n
+s C
j
h
fe
=
( g
m
j oC
j
) r
n
1+j o(C
n
+C
j
) r
n
h
fe
=
(1 j o
C
j
g
m
) g
m
r
n
1+ j o(C
n
+C
j
) r
n
For small
s
:
o
low
C
j
g
m
1
1
10
and:
o
low
(C
n
+C
j
) r
n
1
1
10
We have:
h
fe
=g
m
r
n
=
g
m
=
I
C
V
T
r
n
=
V
T
I
C
o=o
low
Note: o
low
(C
n
+C
j
) r
n
=o
low
(C
n
+C
j
)

g
m
o
low
C
j
g
m

multiply N&D by r

and set s = j
factor N to isolate g
m
ESE319 Introduction to Microelectronics
9
2008 Kenneth R. Laker, update 12Oct10 KRL
Frequency Response of h
fe
cont.
h
fe
=
(1j o
C
j
g
m
) g
m
r
n
1+j o(C
n
+C
j
) r
n
=
(
1j
o
o
z
)
(
1+j
o
o

)
g
m
r
n
=
(
1j
f
f
z
)
(
1+j
f
f

)

f

=
1
2n(C
n
+C
j
) r
n
=
g
m
2n(C
n
+C
j
)
the upper:
f
z
=
1
2nC
j
/ g
m
=
g
m
2nC
j
Hence, the lower break frequency or 3dB frequency is f

f
z
>10 f

where
f

h
fe
(dB)
f
z
f
20log
10

(C
n
+C
j
) r
n
=(C
n
+C
j
)

g
m

C
j
g
m
=>
f
z
f

ESE319 Introduction to Microelectronics
10
2008 Kenneth R. Laker, update 12Oct10 KRL
Frequency Response of h
fe
cont.
For the range where: s.t. f

f f
z
We consider the frequency-dependent numerator term to
be 1 and focus on the response of the denominator:
Using Bode plot concepts, for the range where:
f f

h
fe
=g
m
r
n
=
h
fe
=
g
m
r
n
(
1+ j
f
f

)
=

(
1+ j
f
f

)

1j f / f
z

1
ESE319 Introduction to Microelectronics
11
2008 Kenneth R. Laker, update 12Oct10 KRL
Frequency Response of h
fe
cont.
h
fe
=
g
m
r
n
(
1+ j
f
f

)
=

(
1+ j
f
f

)

h
fe

(
f
f

)
=
f

f
Neglecting numerator term:
Unity gain bandwidth:
h
fe

=1
f

f

f =f
T
=1 f
T
= f

f
T
=
o
T
2n
= f

And for >>1 (but < ):
f / f

f / f
z
BJT unity-gain fre-
quency or GBP
|
ESE319 Introduction to Microelectronics
12
2008 Kenneth R. Laker, update 12Oct10 KRL
Frequency Response of h
fe
cont.
o

=
1
(
C
n
+C
j
)
r
n
=
10
12
10
3
(12+2)2.5
=28.5710
6
rps
o
z
=
g
m
C
j
=
4010
3
10
12
2
Hz=2010
9
rps
=100 r
n
=2500D C
n
=12 pF C
j
=2 pF g
m
=4010
3
S
f

=
o

2n
=
28.57
6.28
10
6
Hz=4.55 MHz
f
z
=
o
z
2n
=3.1810
9
Hz=3180 MHz
f
T
= f

=455 MHz
ESE319 Introduction to Microelectronics
13
2008 Kenneth R. Laker, update 12Oct10 KRL
//fT Bode Plot
Beta=100;
KdB= 20*log10(Beta);
fz=3180;
fp=4.55;
f= 1:1:10000;
term1=KdB*sign(f); //Constant array of len(f)
term2=max(0,20*log10(f/fz)); //Zero for f < fz;
term3=min(0,-20*log10(f/fp)); //Zero for f < fp;
BodePlot=term1+term2+term3;
plot(f,BodePlot);
Scilab f
T
Plot
ESE319 Introduction to Microelectronics
14
2008 Kenneth R. Laker, update 12Oct10 KRL
h
fe
Bode Plot
(dB)
f
T
ESE319 Introduction to Microelectronics
15
2008 Kenneth R. Laker, update 12Oct10 KRL
Multisim Simulation
Insert 1 ohm resistors we want to measure a current ratio.
I
b
I
c
h
fe
=
I
c
I
b
=
g
m
s C
j
1
r
n
+s(C
n
+C
j
)
mS
v-pi
v-pi
ESE319 Introduction to Microelectronics
16
2008 Kenneth R. Laker, update 12Oct10 KRL
Simulation Results
Low frequency |h
fe
|
Unity Gain frequency about 440 MHz.
f
T
= f

=455 MHz
Theory: