2SK3451-01MR

Super FAP-G Series

Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

FUJI POWER MOSFET200303

N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F

Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25C unless otherwise specified)
Ratings 600 13 52 30 13 216.7 20 5 2.16 80 +150 Operating and storage Tch -55 to +150 temperature range Tstg Isolation Voltage VISO *4 2 < *1 L=2.36mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch=150C < < *3 IF< D, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 t=60sec, f=60Hz =-I Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS /dt dV/dt *3 PD Ta=25C Tc=25C Unit V A A V A mJ kV/s kV/s W C C kVrms

Equivalent circuit schematic

Drain(D)

Gate(G) Source(S)

Electrical characteristics (Tc =25C unless otherwise specified)

Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 VCC =300V ID=12A VGS=10V L=2.36mH Tch=25C IF=12A VGS=0V Tch=25C IF=12A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C

Min.
600 3.0

Typ.

Max.
5.0 25 250 100 0.65

Units
V V A nA S pF

10 0.50 5.5 11 1600 2400 160 240 7 10.5 18 27 16 24 35 50 8 15 34 51 12.5 19 11.5 17.5 13 1.00 1.50 0.75 6.5

ns

nC

A V s C

Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient

Min.

Typ.

Max.
1.56 58.0

Units
C/W C/W

2SK3451-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)

FUJI POWER MOSFET

90 80 70 60 50 40 30

500 450

Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V

IAS=6A

400 350 300 IAS=8A

EAS [mJ]
0 25 50 75 100 125 150

PD [W]

250 200 150 IAS=13A

20 10 0

100 50 0 0 25 50 75 100 125 150

Tc [C]

starting Tch [C]

Typical Output Characteristics

ID=f(VDS):80s Pulse test,Tch=25C
30 28 26 24 22 20 20V 10V 8V 7.5V

Typical Transfer Characteristic

ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C

10

ID [A]

16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 VGS=6.5V 7.0V

ID[A]
1 0.1 0

18

10

VDS [V]

VGS[V]

Typical Transconductance
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
100 1.4 1.3 1.2 1.1 1.0 10

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80s Pulse test, Tch=25C
VGS=6.5V 7.0V

RDS(on) [ ]

0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1

7.5V 8V 10V 20V

gfs [S]
1

0.1 0.1 1 10

0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26

ID [A]

ID [A]

2SK3451-01MR

FUJI POWER MOSFET

Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V

2.0 1.8 1.6 1.4
7.0 6.5 6.0 5.5

Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA

max. 5.0

VGS(th) [V]

RDS(on) [ ]

4.5 4.0 3.5 3.0 min.

1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 max. typ.

2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150

Tch [ C]

Tch [C]

Typical Gate Charge Characteristics

VGS=f(Qg):ID=12A, Tch=25C
24 22 20 18 300V 16 14 480V Vcc= 120V 1n 10n

Typical Capacitance C=f(VDS):VGS=0V,f=1MHz

Ciss

VGS [V]

C [F]

12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80

100p

Coss

10p Crss

1p 10
-1

10

10

10

10

Qg [nC]

VDS [V]

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80s Pulse test,Tch=25C
100

Typical Switching Characteristics vs. ID

t=f(ID):Vcc=300V, VGS=10V, RG=10

10 10

tr td(off)

IF [A]

t [ns]

td(on) 10
1

tf

10 0.1 0.00

0.25

0.50

0.75

1.00 VSD [V]

1.25

1.50

1.75

2.00

10

10

ID [A]

2SK3451-01MR
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0

FUJI POWER MOSFET

10

10

Zth(ch-c) [C/W]

10

-1

10

-2

10

-3

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

t [sec]

10

Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=60V

Avalanche Current I AV [A]

Single Pulse 10
1

10

10

-1

10

-2

10-8

10-7

10-6

10-5

10-4

10-3

10-2

tAV [sec]

http://www.fujielectric.co.jp/denshi/scd/

This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.