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EE/APR2010/ELE232

UNIVERSITI TEKNOLOGI MARA FINAL EXAMINATION

COURSE COURSE CODE EXAMINATION TIME

ELECTRONICS 1 ELE232 APRIL 2010 3 HOURS

INSTRUCTIONS TO CANDIDATES 1. This question paper consists of two (2) parts: PART A ( 3 Questions ) PART B ( 5 Questions ) Answer ALL questions from PART A and four (4) questions from PART B. i) ii) iii) Answer PART A ( Question 1 ) in the Objective Answer Sheet Answer PART A ( Question 2 ) in the TRUE/FALSE Answer Sheet Answer PART A ( Question 3 ) and PART B in the Answer Booklet. Start each answer on a new page.

2.

3.

Do not bring any material into the examination room unless permission is given by the invigilator. Please check to make sure that this examination pack consists of: i) ii) iii) iv) the Question Paper an Answer Booklet - provided by the Faculty Objective Answer Sheet - provided by the Faculty a true/false Answer Sheet - provided by the Faculty

4.

DO NOT TURN THIS PAGE UNTIL YOU ARE TOLD TO DO SO

This examination paper consists of 11 printed pages
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CONFIDENTIAL PART A QUESTION 1

EE/APR2010/ELE232

Choose the BEST answer for each of the following questions. a) Valence electrons are electrons a) b) c) d) b) in various orbits around the nucleus. in the closest orbit to the nucleus. in the most distant orbit from the nucleus. has the lowest energy level in the atomic structure.

Which of the following statements is NOT true about energy levels and bands? a) b) c) d) Silicon has a higher energy gap than germanium. Electrons in conduction band originate from valance band when acquired sufficient energy to escape from any atom. The higher the energy gap, the easier the electrons to become free carriers. Electrons in conduction band are tightly bounded to parent atoms and not free to move throughout the material.

c)

When a pn junction is formed, electrons move across the junction and fill holes in the p-region. The filled hole is a a) b) c) d) neutral atom. minority carrier. positive ion. negative ion.

d)

A metallic conductor has a) b) c) d) many free electrons held by the attraction of positive ions. covalent bonds between neighbouring atoms. four electrons in its outer shell. a filled valence shell.

e)

A semiconductor is a crystalline material with a) b) c) d) many free electrons held by the attraction of positive ions. strong covalent bonds between neighbouring atoms. only one electron in its outer shell. a filled valence shell. (5 marks)

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CONFIDENTIAL QUESTION 2

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For each of the following statements, state whether it is TRUE (T) or FALSE (F). a) An impurity such as antimony (Sb) has five valence electrons. When silicon has Sb impurities, an n-type material is formed. All diode models namely piece-wise linear, simplified (practical) and ideal employ the largest reverse resistance. The forward biased knee voltage of a semiconductor diode is approximately equal to the bias supply voltage. In semiconductor devices, the most accurate resistance method used for small signal is average ac resistance and for large signal is ac or dynamic resistance. The forward bias voltage for diode conduction is reduced by an increase in temperature. (5 marks)

b)

c)

d)

e)

QUESTION 3 a) Briefly distinguish one major difference between two types of reverse breakdown in zener diode. (3 marks) Discuss and sketch the process that stops the migration of charge or carrier across the boundary of pn junction. (3 marks) Using a suitable diagram, explain about the formation of two types of charge movement or current in semiconductor. (4 marks)

b)

c)

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PART B QUESTION 1 a) Describe the operation of a full-wave bridge rectifier. Use suitable diagrams to support your explanation. (3 marks) b) Photodiodes and voltage multipliers are some of examples in diode applications. i) What is the proper biasing condition for a photodiode to operate? Describe the meaning of 'dark current' in the operation. (2 marks) State the function of voltage multiplier circuits. Give two (2) examples of voltage multiplier applications. (3 marks)

ii)

c)

By referring to the circuit shown in Figure Q1c, i) ii) determine the diode current l D and the output voltage V 0 . repeat part c(i) if the orientation of Ge diode is changed to opposite direction.

Assume the barrier potentials for Si and Ge are V = 0.7 V and VK = 0.3 V respectively while ideal diode should has zero drop. Ir +20 V 5V -VW 2k2

o +V

Figure Q1c (6 marks)

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d)

Design a clamper circuit to perform the function as indicated in Figure Q1d. Use silicon diode which has a potential drop of 0.7 V. Justify the proposed design with suitable circuit diagrams and state any assumptions made. V,
A

V0 cH
4^

25 V V, -5V - t

-o
CLAMPER CIRCUIT DESIGN

VQ - t -10V

-40 V

Figure Q1d (6 marks) QUESTION 2 a) Sketch the general block diagram of a power supply unit and hence state the function of IC regulator in the block. (3 marks) Briefly explain the results of selecting the operating point at A, B, C and D on the characteristic curve of a BJT transistor as shown in Figure Q2b.

b)

Icn,ax25

Saturation

> Cutoff

VCE (V)

Figure Q2b (4 marks)

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C)

For bipolar junction transistor (BJT), determine the followings: i) Sketch the input and output characteristics of common-base NPN BJT amplifier. Include relevant details in the diagrams. (3 marks) What is the different between unipolar and bipolar transistor? (3 marks)

ii)

d)

Figure Q2d shows a zener diode functions as a voltage regulator. i) ii) iii) Determine the range of RL and l L that will result in V0 being maintained at 10 V. Calculate the maximum wattage rating of the diode, Plot V0 versus RL. 1k5 lR - +V0

AAAR V = 50 V V Z =10V lzm = 15 mA

I
^
RL

Figure Q2d (7 marks) QUESTION 3 a) Figure Q3a shows the common emitter NPN BJT amplifier. The device parameters are given as (3 = 100 and V B E = 0.7 V. 1 1 Assume that l CQ = (lCmax) a r | d VCEQ = (V c c ). For this amplifier, determine: i) ii) iii) iv) v) the function of C^, C2 and C3. the collector current, lCmax when the transistor is saturated (full-on). the collector-emitter voltage, V C E when the transistor is in cutoff (off). the dc voltages VB, VE and V c . the maximum peak-peak output swing, V0(max).

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+V CC = + 1 2 V

V,

v0

^7^
Figure Q3a
(10 marks) b) Figure Q3b shows a BJT amplifier circuit. Given the BJT parameters such as follows: re = 7 Q., rbb' = 150 fi, B = 150 and rce = oo. Answer the followings: i) ii) iii) iv) v) vi) Identify this amplifier type of common configuration, Draw the hybrid-n ac equivalent circuit, Determine the voltage gain A v = VQA/J. Determine the input impedance Zin = V/ij. Determine the output impedance Zout = \ZJ\0Determine current gain, A = \J\\.

Derive all essential equations and state any assumptions made.

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1|w\ 15 R
R
R

c2 ^ i

VD

D
7

1k0
V,

Rs

330R ^ _

Figure Q3b (10 marks) QUESTION 4 a) List three (3) main classes of amplifier. Then, sketch the output voltage waveform (indicate the conduction time) for each class with respect to the input signal as shown in Figure Q4a.

cot

Figure Q4a (4 marks) b) Define what bode plot is. Sketch an example of a bode plot for low-frequency region showing the asymptotes, cut-off frequency and the actual frequency curve. (4 marks)

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c)

For the cascaded amplifier shown in Figure Q4c, draw the ac equivalent circuit and determine i) ii) the total voltage gain, A w = VQ/VJ. the overall voltage gain, AVs = VQA/S in dB.

-vw
Vs
300 R

AVNLI - 15

AvNL2 - 35

AvNL3 - 2 5

V,

Zn = 3k0 Zi = 220R

Zi2 = 7k5 Zo2 = 360R

Zi3 = 8k2 Zo3 = 220R

3k0

V0

Figure Q4c. (6 marks) d) An amplifier has a power gain of 20 dB and internal noise of 45 pW. The input to the amplifier consists of 150 pW signal and 55 pW noise. Determine i) ii) QUESTION 5 a) Power MOSFETs and IGBTs as power switching devices. State two (2) similarities and two (2) dissimilarities between both devices. (4 marks) Referring to the four-layer diode characteristic curve and the details depicted in Figure Q5b, explain how the diode switch between the forward blocking region and forward conduction region. the signal to noise ratio at the input and output of the amplifier, SNRin and SNR0Ut. the noise figure (NF) in dB. (6 marks)

b)

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Forward conduction region

Forward blocking region

VK

VAK

V, BR(F)
Figure Q5b (4 marks)

c)

The SCR in Figure Q5c(i) has the following parameters: VGT = 0.9 V, lGT = 1.5 mA, l H = 10 mA and VK = 0.7 V. Determine: i) ii) iii) iv) the output voltage when the SCR is 'OFF'. the minimum input voltage, Vin that triggers the SCR. the value of V c c to be decreased until the SCR opens. If a sinusoidal signal is applied to the anode of SCR as depicted in Figure Q5c(ii), sketch the voltage across the SCR assuming that the SCR is an ideal diode.

V0

Figure Q5c(i)

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Ao-

GoR:

Figure Q5c(ii) (6 marks) d) Diacs and triac are also called silicon bidirectional switches, i) How to trigger (turn on) diacs? (3 marks) ii) Name three (3) applications where triacs are mostly used. (3 marks)

END OF QUESTION PAPER

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