Академический Документы
Профессиональный Документы
Культура Документы
Michael H. Perrott
February 25, 2004 Copyright 2004 by Michael H. Perrott All rights reserved.
M.H. Perrott
Consider random variables x and y with probability density functions fx(x) and fy(y) and joint probability function fxy(x,y)
Note: we will often abuse notation and denote as a random variable (i.e., noise) rather than its mean The variance of x (assuming it has zero mean) is
- A useful statistic is
If the above is zero, x and y are said to be uncorrelated
M.H. Perrott
2
-f2 -f1 0
f1
f2
f1
f2
Two-sided spectrum
In the next few lectures, we assume a one-sided spectrum for all noise analysis
|H(f)|2
B AB
Sy(f)
f y(t) H(f)
x(t)
For the random signal passing through a linear, time-invariant system with transfer function H(f)
Noise in Resistors
k is Boltzmanns constant
M.H. Perrott
M.H. Perrott
G S
- Drain noise Thermal and 1/f influenced by transistor size and bias - Gate noise
Induced from channel influenced by transistor size and bias Caused by routing resistance to gate (including resistance of polysilicon gate) Can be made negligible with proper layout such as fingering of devices
M.H. Perrott
7
ind
f
is called excess noise factor = 2/3 in long channel = 2 to 3 (or higher!) in short channel NMOS (less in PMOS) gdo will be discussed shortly
4kTgdo f
M.H. Perrott
ind
f
M.H. Perrott
Parameterized by Kf and n 4kTgdo Provided by fab (note n 1) Currently: Kf of PMOS << Kf of NMOS due to buried channel
f
1/f noise corner frequency
Fluctuating channel potential couples capacitively into the gate terminal, causing a noise gate current
ing
f slope = 20 dB/decade
4kTgdo f
5 ft
10
Thermal Noise
Gate Noise
Noise Amplifiers, PhD Thesis, Stanford University, August 2001 http://www-tcad.stanford.edu/tcad/pubs/theses/goo.pdf Jung-Suk Goo et. al., The Equivalence of van der Ziel and BSIM4 Models in Modeling the Induced Gate Noise of MOSFETS, IEDM 2000, 35.2.1-35.2.4 Todd Sepke, Investigation of Noise Sources in Scaled CMOS Field-Effect Transistors, MS Thesis, MIT, June 2002 http://www-mtl.mit.edu/research/sodini/sodinitheses.html
11
M.H. Perrott
- Equals g
M.H. Perrott
12
Vgs
M1 1.8 W = L 0.18
Transconductance (milliAmps/Volts)
Id
3.5 3
gd0=nCoxW/L(Vgs-VT)
2.5 2 1.5 1 0.5 0 0.4
gm (simulated in Hspice)
0.6
0.8
1.6
1.8
M.H. Perrott
Vgs
M1 1.8 W = L 0.18
Transconductance (milliAmps/Volts)
Id
3.5 3 2.5
gd0=nCoxW/L(Vgs-VT)
2 1.5 1 0.5 0
gm (simulated in Hspice)
100
200
300
400
500
600
700
M.H. Perrott
14
M.H. Perrott
15
M.H. Perrott
16
ing ID RG RD Vout
vgs
Cgs
gmvgs
ind
Thermal noise
M.H. Perrott
1/f noise
17
D G
Zg Zgs ing vgs Cgs gmvgs
ind
S
Zdeg
iout
D G
Zg Zgs vgs Cgs gmvgs
indg
S
Zdeg
M.H. Perrott
D G
Zg Zgs ing vgs Cgs gmvgs
ind
S
Zdeg
iout
D G
Zg Zgs vgs Cgs gmvgs
indg
S
Zdeg
M.H. Perrott
19
Calculation of Zgs
iout
D G itest
Zg Zgs vtest vgs Cgs gmvgs
S
v1 Z deg
M.H. Perrott
20
Calculation of
iout
D G
Zg Zgs vgs Cgs gmvgs itest
S
v1 Zdeg
M.H. Perrott
21
D
Iout
G D S
Zg Zgs vgs Cgs gmvgs indg
G
Zg
Zdeg
S
Zdeg
M.H. Perrott
22
M.H. Perrott
23
M.H. Perrott
24
D
Iout
G D S
Zg Zgs vgs Cgs gmvgs indg
G
Zg
Zdeg
S
Zdeg
M.H. Perrott
25
Vin
Zgs
vgs
Cgs
gmvgs
indg
M.H. Perrott
26
gs):
gs):
f << 1/(2RsCgs)
0.95
0.9
0.85
0.8
f >> 1/(2RsCgs)
0.75 1/100 1/10 1 10 100
Conclusion: gate noise has little effect on common source amp when source impedance is purely resistive!
29
M.H. Perrott
4kTgdo
f
1/f noise corner frequency 1 2RsCgs
Drain thermal noise is the chief issue of concern when designing amplifiers with > 1 GHz bandwidth
- 1/f noise corner is usually less than 1 MHz - Gate noise contribution only has influence at high
frequencies
Noise performance specification is usually given in terms of input referred voltage noise
30
M.H. Perrott
4kTgdo
f
1/f noise corner frequency Narrowband amplifier frequency range 1 2RsCgs
- Dont care about noise outside that band since it will be - Using reactive elements in the source dramatically
impacts the influence of gate noise
31
M.H. Perrott
Vin
Zgs
vgs
Cgs
gmvgs
indg
M.H. Perrott
32
Vin
Zgs
vgs
Cgs
gmvgs
indg
Set Lg such that it resonates with Cgs at the center frequency (wo) of the narrow band of interest
M.H. Perrott
33
M.H. Perrott
34
4kTgdo
Q2
f
Vin
Zgs
vgs
Cgs
gmvgs
indg
At resonance:
M.H. Perrott
36
signal spectrum 4kTgdo drain thermal noise gate noise contribution wo/2
Q2
Q2
f
M.H. Perrott
- SNR - SNR
out
Rs
vin Zin
vx
inout Zout ZL
iout
Definitions
M.H. Perrott
38
Vin
Zgs
vgs
Cgs
gmvgs
indg
-R
- SNR
M.H. Perrott
out:
M.H. Perrott
40
M.H. Perrott
41
We see that the noise factor will be minimized for some value of Q
In Tom Lees book (pp 272-277), the minimum noise factor for the MOS common source amplifier (i.e. no degeneration) is found to be:
M.H. Perrott
6 5 4 3 2 1 0
Achievable values as a function of Q under the constraint that 1 = wo LgCgs c = -j0 c = -j0.55 Minimum across all values of Q and 1 LgCgs
4 5 6 7
c = -j1
10
43
Q
M.H. Perrott
resonance if gate noise is uncorrelated to drain noise (i.e., if c = 0) well see this next lecture We typically must operate slightly away from resonance in practice to achieve minimum noise factor since c will be nonzero
How do we determine the optimum source impedance to minimize noise figure in classical analysis?
- Next lecture!
M.H. Perrott
44