MCT6, MCT61, MCT62, MCT66

HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

APPROVALS UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS MCT6 VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 MCT61, MCT62, MCT66 VDE 0884 approval pending

2.54 1 7.0 6.0 1.2 10.16 9.16 4.0 3.0 0.5 3.0 0.5 3.35 2 3 4

Dimensions in mm 8 7 6 5 7.62

EN60950 approval pending

13 Max 0.26

DESCRIPTION The MCT6, MCT61, MCT62 & MCT66 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages mounted two channels per unit. FEATURES Options : 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. High Isolation Voltage (5.3kV ,7.5kV ) RMS PK APPLICATIONS Computer terminals Industrial systems controllers Measuring instruments Signal transmission between systems of different potentials and impedances

ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BV ECO Power Dissipation POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) 30V 6V 150mW 50mA 6V 70mW

OPTION SM
SURFACE MOUNT

OPTION G

7.62

0.6 0.1 10.46 9.86

1.25 0.75

0.26 10.16

ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581

ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 4950901 e-mail info@isocom.com http://www.isocom.com
DB92012m-AAS/A1

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ELECTRICAL CHARACTERISTICS ( T
A

PARAMETER Input Forward Voltage (V ) Reverse Voltage (V ) Reverse Current (I )F

R

= 25C Unless otherwise noted ) MIN TYP MAX UNITS 1.50 3 10 30 6 100 V V A V V nA

TEST CONDITION I = 20mA I = 10 A F V = 3V

R

Output

R Collector-emitter Breakdown (BV ) Emitter-collector Breakdown (BV ) Collector-emitter Dark Current (I CEO ) ECO

I R 1mA (note 2) = I = 100 A C V = 10V

E CE

Coupled

CEO Current Transfer Ratio (CTR) (Note 2) MCT6 20 MCT61 50 MCT62 100 MCT66 6 Collector-emitter Saturation Voltage V CESAT MCT6,61,62 MCT66 5300 Input to Output Isolation Voltage V 7500 Input to Output Isolation Voltage VISO 5x1010 Input-output Isolation Resistance R 2.4 ISO Output Rise Time, Fall Time tr , tf ISO 15 Output Rise Time, Fall Time tr , tf

% % % % 0.4 0.4 V V V V
RMS

10mA IF , 10V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 10mA IF , 10V VCE 16mA IF , 2mA IC 40mA IF , 2mA IC See note 1 See note 1 V = 500V (note 1) IC = 2mA, VCC = 10V, R L = 100 (Fig. 1) IO IC = 2mA, VCC = 10V, R L = 1k (Fig. 2)

sPK s

Note 1 Note 2

Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.

VCC = 10V RL = 100 OUTPUT

VCC = 10V RL = 1k OUTPUT

INPUT ton tr OUTPUT 10% 10% toff tf

90%

90%

FIG 1

FIG 2

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DB92012m-AAS/A1

Collector Power Dissipation vs. Ambient Temperature

Collector Current vs. Collector-emitter Voltage

200 Collector power dissipation P C (mW) 50 Collector current I C (mA) 150 40 30 20 10

TA = 25C

50 30 20 15 10

100

50

IF = 5mA 0 -30 0 25 50 75 100 125 0 0 2 4 6

CE

8 (V)

10

Ambient temperature T ( C ) A

Collector-emitter voltage V

Forward Current vs. Ambient Temperature 60 50 40 Relative current transfer ratio Forward current I (mA) F 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -30 0 25 50 75 100 125 1

Relative Current Transfer Ratio vs. Forward Current

30 20 10 0

VCE = 10V T A = 25C

10

20

50

Ambient temperature T A ( C )

Forward current I F (mA)

(V)

Relative Current Transfer Ratio vs. Ambient Temperature 1.5 I = 10mA F V = 10V
CE

Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 0.20 I = 16mA I F = 2mA
C

1.0

CE(SAT)

0.16

0.12

0.5

Collector-emitter saturation voltage V

Relative current transfer ratio

0.08 0.04 0 -30 0 25 50 75 100

0 -30 0 25 50 75 100

Ambient temperature T ( C ) A
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Ambient temperature T A ( C )
DB92012m-AAS/A1

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