Академический Документы
Профессиональный Документы
Культура Документы
[1]Maesoon Im, Jae-Hyuk Ahn, Jin-Woo Han, Tae Jung Park, Sang Yup Lee, and Yang-Kyu Choi Development of a Point-of-Care Testing Platform With a Nanogap-Embedded Separated Double-Gate Field Effect Transistor Array and Its Readout System for Detection of Avian Influenza, IEEE sensors journal, vol. 11, no. 2, february 2011 [2]J.-C. Chou and C.-N. Hsiao, Drift behavior of ISFETs with a-Si:H-SiO gate insulator, Mat. Chem. Phys., vol. 63, no. 3, pp. 270273, Mar. 2000. [3]C. G. Jakobson, M. Feinsod, and Y. Nemirovsky, Low frequency noise and drift in ion sensitive field effect transistors, Sens. Actuators B Chem., vol. 68, no. 13, pp. 134139, Aug. 2000. [4]J. C. Chou and C. N. Hsiao, The hysteresis and drift effect of hydrogenated amorphous silicon for ISFET, Sens. Actuators B Chem., vol. 66, no. 13, pp. 181183, Jul. 2000. [5]Stephan Schmid Stephan Schmid,Ion sensitive Field Effect Transistors (ISFETs) Basics and Applications Moscow Bavarian Joint Advanced Student School 2006 [6]H. Im, X.-J. Huang, B. Gu, and Y.-K. Choi, A dielectric-modulated field-effect transistor for biosensing, Nat. Nanotechnol., vol. 2, pp. 430434, Jun. 2007. [7]B. Gu, T. J. Park, J.-H. Ahn, X.-J. Huang, S. Y. Lee, and Y.-K. Choi, Nanogap field-effect transistor biosensors for electrical detection of avian influenza, Small, vol. 5, no. 21, pp. 2407 2412, Nov. 2009. [8]Ronald Curley, Thomas McCormack, and Matthew Phipps,Low-pressure CVD and PlasmaEnhanced CVD [9]M. W. Khan, M. Gallagher, D. Bucher, C. P. Cerini, and E. D. Kilbourne, Detection of influenza virus neuraminidase-specific antibodies by an enzyme-linked immunosorbent assay, J. Clin. Microbiol., vol. 16, no. 1, pp. 115122, Jul. 1982. [10]W. M. Siu and R. S. C. Cobbold, Basic properties of the electrolyte- SiO -Si system: Physical and theoretical aspects, IEEE Trans. Electron Devices, vol. ED-26, no. 11, pp. 18051815, Nov. 1979.
29
[11]X. Zhou, K. Y. Lim, and W. Qian, Threshold voltage definition an extraction for deepsubmicron MOSFETs, Solid State Electron., vol.45, no. 3, pp. 507510, Mar. 2001. [12]D.-S. Kim, J.-E. Park, J.-K. Shin, P. K. Kim, G. Lim, and S. Shoji, An extended gate FETbased biosensor integrated with a Si microfluidic channel for detection of protein complexes, Sens. Actuators B Chem.,vol. 117, no. 2, pp. 488494, Oct. 2006. [13]E. Stern, R. Wagner, F. J. Sigworth, R. Breaker, T. M. Fahmy, and M. A. Reed, Importance of the debye screening length on nanowire field effect transistor sensors, Nano Lett., vol. 7, no. 11, pp. 34053409, Oct. 2007.
30