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2SB1188 / 2SB1182 / 2SB1240

Transistors

Medium power transistor (32V, 2A)


2SB1188 / 2SB1182 / 2SB1240
Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. External dimensions (Unit : mm)
2SB1188
0.50.1
+0.2 4.50.1 1.60.1

2SB1182
1.50.3
6.50.2 5.1+0.2 0.1 2.3+0.2 0.1 0.50.1

+0.2 1.5 0.1

C0.5

5.5+0.3 0.1

4.00.3

2.5+0.2 0.1

(1)

(2)

(3) 0.40.1 1.50.1

1.00.2

0.4+0.1 0.05

0.75 0.9

0.650.1

0.40.1 1.50.1

0.50.1 3.00.2

0.550.1 2.30.2 2.30.2 1.00.2

Structure Epitaxial planar type PNP silicon transistor

ROHM : MPT3 EIAJ : SC-62

(1) Base (2) Collector (3) Emitter

(1) (2) (3)

ROHM : CPT3 EIAJ : SC-63

(1) Base (2) Collector (3) Emitter

Abbreviated symbol: BC

2.50.2

2SB1240
6.80.2

0.65Max.

1.0

0.50.1 (1) (2) (3)

2.54 2.54 1.05

14.50.5

4.40.2

0.9

0.450.1

ROHM : ATV

(1) Emitter (2) Collector (3) Base

Denotes h
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current

FE

Symbol VCBO VCEO VEBO IC

Limits 40 32 5 2 3 0.5

Unit V V V A(DC) A (Pulse)1 W W

2SB1188
Collector power dissipation

PC 2SB1182 2SB1240

2 10 1

2 3

W (Tc=25C) W

Junction temperature Storage temperature

Tj Tstg

150 55 to 150

C C

1 2 3

Single pulse, Pw=100ms When mounted on a 40400.7 mm ceramic board. Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.

Rev.A

2.5

9.50.5

0.9

1.5

1/3

2SB1188 / 2SB1182 / 2SB1240


Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 40 32 5 82 Typ. 0.5 100 50 Max. 1 1 0.8 390 Unit V V V IC= 50A IC= 1mA IE= 50A VCB= 20V VEB= 4V IC/IB= 2A/ 0.2A VCE= 3V, IC= 0.5A VCE= 5V, IE=0.5A, f=100MHz VCB= 10V, IE=0A, f=1MHz Conditions

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance

A A
V MHz pF

Measured using pulse current.

Packaging specifications and hFE


Package Code Type 2SB1188 2SB1182 2SB1240 hFE PQR PQR PQR Basic ordering unit (pieces) T100 1000 Taping TL 2500 TV2 2500

hFE values are classified as follows :


Item hFE P 82 to 180 Q 120 to 270 R 180 to 390

Electrical characteristic curves


VCE= 3V
COLLECTOR CURRENT : IC (mA)

0.5
COLLECTOR CURRENT : IC (A)

Ta=25C

2.5mA

1.75mA

DC CURRENT GAIN : hFE

1000 Ta=100C 25C 500 40C 200 100 50 20 10 5 2 1

2.25mA

500

Ta=25C

0.4

2mA 1.5mA 1.25mA

200

VCE= 6V 3V 1V

0.3

0.2

1mA 750A
500A

100

50

0.1

250A

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 BASE TO EMITTER VOLTAGE : VBE (V)

0 0

0.4

0.8

1.2

IB=0A 1.6 2

20

5 10 20

50 100 200 500 1000 2000

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

COLLECTOR CURRENT : IC (mA)

Fig.1 Grounded emitter propagation characteristics

Fig.2 Grounded emitter output characteristics

Fig.3 DC current gain vs. collector curren ( )

Rev.A

2/3

2SB1188 / 2SB1182 / 2SB1240


Transistors
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)

500
Ta=100C 25C 25C

VCE= 3V

500 Ta=25C

500 lC/lB=10

DC CURRENT GAIN : hFE

200

200

200 100 50

100

100

IC/IB=50

Ta=100C 25C 40C

50

50

20 10

20 5 10 20 50 100 200 500 1000 2000

20

5 10 20

50 100 200 500 1000 2000

5 10 20

50 100 200 500 1000 2000

COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector current ( )

Fig.5 Collector-emitter saturation voltage vs. collector current ( )

Fig.6 Collector-emitter saturation voltage vs. collector current ( )

TRANSITION FREQUENCY : fT (MHz)

Ta=25C
1

500

Ta=25C VCE= 5V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)

BASE SATURATION VOLTAGE : VBE(sat)(V)

300 200 100 50

Cib

IC /IB=10
0.5

Ta=25C f=1MHz IE=0A IC=0A


Cob

200

100

0.2 0.1 0.05

20 10

50

5 10 20

50 100 200 500 1000 2000

10

20

50

100 200

500 1000 2000

0.5

10

20 30

COLLETOR CURRENT : IC (mA)

EMITTER CURRENT : IE (mA)

Fig.7 Base-emitter saturation voltage vs. collector current

Fig.8 Gain bandwidth product vs. emitter current

COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)

Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage

5
COLLECTOR CURRENT : IC (A)

IC Max. (pulse)
COLLECTOR CURRENT : IC (A)

5 2 1 0.5 0.2 0.1 0.05

IC Max. (Pulse)
DC

PW=500s

2 1 0.5 0.2 0.1 0.05 0.02 Ta=25C Single nonrepetitive pulse 0.01 0.1 0.2 0.5 1

D C

0 =1 Pw

s 0m =1 Pw s 0m

PW=1ms PW=100ms

5 10 20

50

Ta=25C Single nonrepetitive pulse 0.01 0.1 0.2 0.5 1

0.02

5 10 20

50

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Safe operation area (2SB1188)

Fig.11 Safe operation area (2SB1182)

Rev.A

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1