Manual de Transistores de Baja Señal Motorola

Small Signal Transistors,
FETs and Diodes
In Brief . . .
New in this revision is Motorolas GreenLine portfolio of
devices. They feature energyconserving traits superior to
those of our existing line of standard parts for the same
usage. GreenLine devices can actually help reduce the
power demands of your products.
Also new are the Small Signal Multiintegrated devices.
These are intended to save board space by reduced part
count and functionality. Four to six devices have been
integrated into one small package.
Also, this section highlights semiconductors that are
the most popular and have a history of high usage for the
most applications.
It covers a wide range of Small Signal plastic and
metalcan semiconductors.
A large selection of encapsulated plastic transistors,
FETs and diodes are available for surface mount and
insertion assembly technology. Plastic packages include
TO92 (TO226AA), 1 Watt TO92 (TO226AE), SOT23,
SC59, SC70/SOT323 and SOT223. Plastic multiples
are available in 14pin and 16pin dual inline packages for
insertion applications: SO8, SO14, and SO16 for
surface mount applications.
Motorola Master Selection Guide
Page
Bipolar Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.12
PlasticEncapsulated Transistors . . . . . . . . . . . . . . 5.12
PlasticEncapsulated Multiple Transistors . . . . . . . 5.18
PlasticEncapsulated Surface
Mount Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 5.110
MetalCan Transistors . . . . . . . . . . . . . . . . . . . . . . 5.118
FieldEffect Transistors . . . . . . . . . . . . . . . . . . . . . . . . 5.120
JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.120
MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.122
Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . 5.123
Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . 5.125
Tuning Diodes Abrupt Junction . . . . . . . . . . . . . 5.125
Tuning Diodes HyperAbrupt Junction . . . . . . 5.129
Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.133
Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.135
Multiple Switching Diodes . . . . . . . . . . . . . . . . . . . . 5.139
GreenLine Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.141
Small Signal Multiintegrated Devices . . . . . . . . . . . . 5.143
5.11
Small Signal Transistors, FETs and Diodes
Bipolar Transistors
PlasticEncapsulated
Transistors
23
CASE 2905
TO226AE
1WATT (TO92)
Motorolas Small Signal TO226 plastic transistors

encompass hundreds of devices with a wide variety of
characteristics for generalpurpose, amplifier and switching
applications. The popular highvolume package combines
proven reliability, performance, economy and convenience to
provide the perfect solution for industrial and consumer design
problems. All devices are laser marked for ease of
identification and shipped in antistatic containers, as part of
Motorolas ongoing practice of maintaining the highest
standards of quality and reliability.
23
CASE 2904
TO226AA
(TO92)
Table 1. PlasticEncapsulated GeneralPurpose Transistors

These generalpurpose transistors are designed for smallsignal amplification from dc to low ratio frequencies. They are
also useful as oscillators and generalpurpose switches. Complementary devices shown where available (Tables 14).
NPN
PNP
V(BR)CEO
Volts
Min
fT @ IC
MHz
Min
hFE @ IC
mA
IC
mA
Max
Min
Max
10
10
10
10
10
10
10
50
10
10
10
10
10
10
10
5.0
20
20
20
50
10
10
10
10
10
10
10
10
10
500
500
250
100
100
100
500
600
100
100
800
100
100
100
100
100
600
600
600
1000
200
200
100
100
100
100
200
200
800
100
100
60
120
120
180
100
100
120
200
100
120
120
180
380
40
100
100
50
50
50
100
110
120
200
420
50
120
100
300
400
450
220
450
300
500
460
630
800
220
450
800
400
300
300
150
150
300
800
220
450
800
150
360
630
mA
NF
dB
Max
Style
1.0
100
10
2.0
2.0
2.0
100
150
2.0
2.0
100
2.0
2.0
2.0
2.0
5.0
150
150
150
500
10
10
2.0
2.0
2.0
2.0
2.0
2.0
100
10
10
10
10
10
10
10
10
10
6.0
5.0
10
10
10
10
6.0
4.0
1
1
1
17
17
17
1
1
14
17
17
17
17
17
17
1
1
1
1
1
1
1
17
17
17
17
1
1
17
Case 2904 TO226AA (TO92)

MPS8099
MPSA06
2N4410
BC546
BC546A
BC546B
MPSA05
BC182
BC237B
BC337
BC547
BC547A
BC547B
BC547C
MPSA20
MPS2222A
2N4401
2N4400
MPS6602
2N3903
2N3904
BC548
BC548A
BC548B
BC548C
2N4123
2N4124
BC338
MPS8599
MPSA56
BC556
BC556B
MPSA55
MPS2907A
BC212
BC307B
BC327
BC557
BC557A
BC557B
BC557C
MPSA70
2N4403
2N4402
MPS6652
2N3905
2N3906
BC558B
2N4125
2N4126
BC328
80
80
80
65
65
65
60
60
50
45
45
45
45
45
45
40
40
40
40
40
40
40
30
30
30
30
30
25
25
150
100
60
150
150
150
100
200
200(1)
150
210(1)
150
150
150
150
125
300
200
150
100
200
250
300(1)
300(1)
300(1)
300
200
250
210(1)
(1) Typical
Devices listed in bold, italic are Motorola preferred devices.

5.12
PlasticEncapsulated Transistors (continued)

Table 1. PlasticEncapsulated GeneralPurpose Transistors (continued)
NPN
PNP
V(BR)CEO
Volts
Min
fT @ IC
MHz
Min
hFE @ IC
VCE(sat) @ IC @ IB
mA
IC
A
Max
Min
Max
mA
Volts
Max
mA
mA
Style
200
200
200
200
200
0.5
0.5
0.5
0.5
0.5
40
40
40
80
80
400
400
400
100
100
100
50
50
0.7
0.7
0.7
0.5
0.4
1000
1000
1000
250
250
100
100
100
10
10
1
14
1
1
1
Case 2905 TO226AE (1WATT TO92)

BDC01D
BDB01C
MPS6717
MPSW06
BDB02D
BDC02D
BDB02C
MPSW56
100
100
80
80
80
50
50
50
50
50
Table 2. PlasticEncapsulated LowNoise and Good hFE Linearity

These devices are designed to use on applications where good hFE linearity and lownoise characteristics are required:
Instrumentation, hifi preamplifier.
hFE @ IC
NPN
PNP
V(BR)CEO
Volts
Min
Max
mA
250
150
250
120
180
380
500
100
250
200
380
350
450
300
800
500
650
800
450
800
300
450
800
600
0.1
0.1
0.1
2.0
2.0
2.0
1.0
10
10
2.0
2.0
1.0
1.0
2.0
VT(4)
mV
Typ
NF(5)
dB
Max
fT
MHz
Typ
7.0(7)
2.0
3.0
3.5(8)
2.0(1)
40(2)
40(2)
100(2)
Style
MPS6428
BC239
BC550B
BC550C
MPSA18
MPS3904
BC549B
BC549C
2N5088
2N5089(6)
MPS6521
(1)
(2)
(4)
(5)
(7)
(8)
2N5087
2N5086
BC560B
BC560C
MPS3906
MPS4250
BC559B
BC559C
MPS6523
50
50
50
45
45
45
45
40
40
30
30
30
25
25
9.5
6.5(1)
2.5
2.5
5.0
2.0
2.5
2.5
3.0
2.0
3.0
280
250
250
160
200(2)
250
250
50
50
1
1
1
17
17
17
1
1
1
17
17
1
1
1
Typical
Min
VT : Total Input Noise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at RS = 2.0 k , IC = 200 A, VCE = 5.0 Volts.
NF: Noise Figure at RS = 2.0 k, IC = 200 A, VCE = 5.0 Volts. f = 30 Hz to 15 kHz.
RS = 10 k , BW = 1.0 Hz, f = 100 MHz
RS = 500 , BW = 1.0 Hz, f = 10 MHz

5.13

Table 3. PlasticEncapsulated Darlington Transistors
Darlington amplifiers are cascade transistors used in applications requiring very highgain and input impedance. These
devices have monolithic construction.
hFE @ IC
NPN
PNP
VCE(sat) @ IC & IB
fT @ IC
Min
Max
mA
Volts
Max
mA
mA
Min
mA
S l
Style
1000
1000
25K
20K
150K
200
100
1.5
1.5
1000
100
2.0
0.1
100
125
200
10
1
1
500
1000
500
1000
500
500
500
500
500
1000
10K
10K
10K
10K
10K
20K
30K
20K
10K
30K
160K
50K
200K
300K
100
100
100
200
100
100
100
100
100
20
1.5
1.1
1.5
1.1
1.5
1.5
1.5
1.5
1.5
1.0
100
250
100
200
100
500
500
100
100
100
0.1
0.25
0.1
0.2
0.1
0.5
0.5
0.1
0.1
0.1
125
100
150
125
125
125
200(1)
10
100
500
10
10
10
10
1
1
1
17
1
1
1
1
1
17
V(BR)CEO
Volts
IC
Max

MPSW45A
MPSW64
50
30

MPSA29
BC373
MPSA27
BC618
2N6427
2N6426
MPSA14
MPSA13
BC517
MPSA77
MPSA75
MPSA64
MPSA63
100
80
60
55
40
40
40
30
30
30
Table 4. PlasticEncapsulated HighCurrent Transistors

The following table is a listing of devices that are capable of handling a higher current range for smallsignal transistors.
NPN
PNP
V(BR)CEO
Volts
Min
fT @ IC
hFE @ IC
mA
IC
mA
Max
Min
Max
50
50
1000
1000
50
50
200/150(1)
60
75
75
65
50
10
50
50
10
1000
500
2000
2000
1000
60
40
75
75
60
MHz
Min
VCE(sat) @ IC & IB
mA
Volts
Max
mA
mA
Style
1000
1000
0.5
0.5/0.7
1000
1000
100
100
1
1
400
160
100
150
1000
1000
1000
0.3/0.5
0.5
0.5
0.5
0.5
1000
500
2000
2000
1000
100
50
200
200
100
17
14
1
1
1

MPS6715
MPSW01A
MPS6727
MPSW51A
40
40

BC489
BC639
MPS651
MPS650
BC368
BC490
BC640
MPS751
MPS750
BC369
80
80
60
40
20
(1) Typical

5.14

Table 5. PlasticEncapsulated HighVoltage Amplifier Transistors
These highvoltage transistors are designed for driving neon bulbs and indicator tubes, for direct line operation, and for
other applications requiring highvoltage capability at relatively low collector current. These devices are listed in order of
decreasing breakdown voltage (V(BR)CEO).
Device
Type
V(BR)CEO
Volts
Min
hFE @ IC
IC
Amp
Max
Min
VCE(sat) @ IC & IB
fT @ IC
Volts
Max
mA
mA
MHz
Min
mA
Style
2.0
0.5
20
20
2.0
2.0
60
50
10
10
14
1
30
0.5
20
2.0
50
10
10
100
30
10
10
10
0.5
0.75
0.3
0.2
0.5
0.15
10
50
10
20
20
10
1.0
5.0
1.0
2.0
2.0
1.0
40
50
50
100
10
10
10
10
1
1
1
1
1
1
10
30
10
30
10
20
0.3
0.5
0.3
0.2
20
10
20
10
10
2.0
1.0
2.0
1.0
1.0
50
40
50
40
100
10
10
10
10
10
1
1
1
1
1
mA
Case 2905 TO226AE (1WATT TO92) NPN

BDC05
MPSW42
300
300
0.5
0.5
40
40
25
30
Case 2905 TO226AE (1WATT TO92) PNP

MPSW92
300
0.5
25
Case 2904 TO226AA (TO92) NPN

BF844
MPSA44
2N6517
BF393
MPSA42
2N5551
400
400
350
300
300
160
0.3
0.3
0.5
0.5
0.5
0.6
50
40
30
40
40
80
Case 2904 TO226AA (TO92) PNP

BF493S
2N6520
MPSA92
2N6519
2N5401
350
350
300
300
150
0.5
0.5
0.5
0.5
0.6
40
30
40
45
60
NPN
BF420
BF422
PNP
hFE @ IC
VCE(sat) @ IC & IB
fT @ IC
V(BR)CEO
Volts
Min
IC
Amp
Cont
Min
mA
Volts
Max
mA
mA
MHz
Min
mA
Style
300
250
0.5
0.5
50
50
25
25
2.0
2.0
20
20
2.0
2.0
60
60
10
10
14
14
BF421
BF423

5.15

Table 6. PlasticEncapsulated RF Transistors
The RF transistors are designed for smallsignal amplification from RF to VHF/UHF frequencies. They are also used as
mixers and oscillators in the same frequency ranges.
Device
Type
V(BR)CEO
Volts
Min
hFE @ IC
IC
mA
Max
Min
mA
VCE
V
7.0
8.0
4.0
3.0
50
4.0
4.0
7.0
20
5.0
8.0
3.0
8.0
10
10
10
10
10
5.0
10
10
10
10
10
10
1.0
10
5.0
5.0
10
10
10
fT
MHz
Typ
CRE/CRB
pF
Max
NF
dB
Typ
600
400(2)
400(2)
400(2)
500(2)
650(2)
650(2)
2.5
3.2(3)
800
1200(2)
0.28
0.36
0.65
0.3
0.9
0.65
0.35
0.65
0.9
1.7
1.7
1.3
600(2)
2000(2)
0.85
0.3
f
MHz
Style
100
100
35
200
200
60
200
60
21
2
2
1
1
2
2
21
21
2
1
1
1
1
2
1

BF224
MPSH24
MPSH20
MPSH07A(9)
MPS3866
MPSH11
MPSH10
BF199
BF959
MPSH17
MPS918
MPS5179
MPS3563
MPS6595
30
30
30
30
30
25
25
25
20
15
15
12
12
12
50
50
100
25
400
100
100
50
50
50
50
30
30
25
20
10
60
60
40
40
25
20
25
20
25
750
600(2)
800(2)
600(2)
2000(3)
2.5
3.0
6.0(3)
6.0(3)
5.0(3)
6.0(3)

MPSH81
MPSH69
20
15
50
50
60
30
Table 7. PlasticEncapsulated HighSpeed Saturated Switching Transistors

ton & toff @ IC
Device
Type
ns
Max
ns
Max
mA
V(BR)CEO
Volts
Min
hFE @ IC
VCE(sat) @ IC & IB
fT @ IC
Min
mA
Volts
Max
mA
mA
MHz
Min
mA
Style
15
12
15
15
40
100
30
40
10
10
30
10
0.22
0.22
0.2
0.2
10
10
30
10
1.0
1.0
3.0
1.0
300
300
350
10
10
30
1
1
1
1
12
30
50
0.15
10
1.0
700
10

2N4264
2N4265
MPS3646
MPS2369A
25
25
18
12
35
35
28
18
10
10
300
10

MPS4258
15
20
10
(2) Min
(3) Max
(9) AGC Capable

5.16

Table 8. PlasticEncapsulated Choppers
Devices are listed in decreasing V(BR)EBO.
Device
Type
V(BR)EBO
Volts
Min
IC
Amp(1)
Max
hFE @ IC
Min
VCE(sat) @ IC & IB
fT @ IC
mA
Volts
Max
mA
mA
MHz
Min
mA
Style

MPSA17
15
100
200
5.0
0.25
10
1.0
80
5.0
MPSA16
12
100
200
5.0
0.25
10
1.0
100
5.0
12
0.2
24
1.0

MPS404A
25
150
30
Table 9. PlasticEncapsulated Telecom Transistors

These devices are special product ranges intended for use in telecom applications.
Device
Type
V(BR)CEO
Volts
PD mW
25C
Amb
hFE @ IC @ VCE
fT
IC
mA
Cont
Min
Max
mA
Volts
MHz
Min
Style
600
500
75
25
10
1.0
10
10
300
40
17
1
600
500
100
40
10
1.0
10
10
200
40
17
1

P2N2222A
PBF259,S(10)
40
300
625
625

P2N2907A
PBF493,S(11)
60
300
625
625
(1) Typical
(10) S version, h
FE Min 60 @ IC = 20 mA, VCE = 10 V.
(11) S version, h
FE Min 40 @ IC = 0.1 mA, VCE = 1.0 V.

5.17
PlasticEncapsulated
Multiple Transistors
The manufacturing trend has been toward printed circuit
board design with requirements for smaller packages with
more functions. In the case of discrete components the use of
the multiple device package helps to reduce board space
requirements and assembly costs.
Many of the most popular devices are offered in the
standard plastic DIP and surface mount IC packages. This
includes smallsignal NPN and PNP bipolar transistors,
Nchannel and Pchannel FETs, as well as diode arrays.
14
1
CASE 64606
(TO116)
STYLE 1
16
1
CASE 751B05
SO16
STYLE 4
Specification Tables
The following short form specifications include Quad and Dual transistors listed in alphanumeric order. Some columns
denote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification.
This applies to Table 10 and 11 of this section only.
KEY
TYPE NO.
ID
hFE2
ton
ns
Max
toff
ns
Max
Unit
Subscript
PD
Watts
One
Die
Only
VBE
mV
Max
hFE1
Ref. Point
VCE
Volts
Alphanumeric listing
type numbers
Identification Code
First Letter: Polarity
C both types in multiple device
N NPN
P PNP
Second Letter: Use
A General Purpose Amplifier
E Low Noise Audio Amplifier
F Low Noise RF Amplifier
G General Purpose Amplifier
and Switch
H Tuned RF/IF Amplifier
M Differential Amplifier
S High Speed Switch
D Darlington
Power Dissipation specified at 25C. Single

die rating.
Ref. Point: A Ambient Temperature
C Case Temperature
IC
Amp
Max
hFE @ IC
Min
fT
MHz
Min
Commonemitter
DC Current Gain.
Units for test Current:
A ampere
m mA
u A
CurrentGainBandwidth
Product
Continuous (DC) Collector Current
Rated Minimum CollectorEmitter Voltage

Subscript letter identifies base termination
listed below in order of preference.
SUBSCRIPT:
0 VCEO, open
5.18
Cob
pF
Max
Gp
dB
Min
VCE @
(sat)
Volts
Max
NF @
dB
Max
IC
& IC
Unit
IB
Gp Power Gain
NF Noise Figure
f Test Frequency
AUD 1015 kHz
Frequency Units:
H HertzM MHz
K kHz
G GHz
VCE(sat) CollectorEmitter
Saturation Voltage
IC Test Current
Current Units: u A
m mA
A Amp
hFE1/hFE2 Current Gain Ratio
VBE Differential Base Voltage |VBE1 VBE2|.
Differential Amplifiers
ton turnon time
toff turnoff time
Output Capacitance, commonbase. Shown without distinction:

Ccb CollectorBase Capacitance
Cre CommonEmitter Reverse Transfer Capacitance
PlasticEncapsulated Multiple Transistors (continued)

Table 10. PlasticEncapsulated Multiple Transistors Quad
The following table is a listing of the most popular multiple devices available in the plastic DIP package. These devices are
available in NPN, PNP, and NPN/PNP configurations. (See note.)
hFE2
VBE
mV
Max
ton
ns
Max
toff
ns
Max
8.0
4.0
35(1)
9.0(1)
285(1)
15(1)
0.3
0.25
10
10
3.0(1)
2.0(1)
8.0
25
10
15
4.0
4.0
4.0
4.5
8.0
8.0
4.0
8.0
8.0
8.0
4.0
4.5
4.5
5.0
5.0
6.0
5.0
45(1)
40
35
50
180(1)
90
60
120
0.4
0.5
0.45
0.55
10
10
10
10
3.0(1)
2.0(1)
37(1)
43(1)
30(1)
30(1)
136(1)
155(1)
225(1)
225(1)
0.2
0.25
0.4
0.4
10
10
10
10
4.0(1)
30(1)
30(1)
0.8
225(1)
225(1)
20
45
150
1.5
0.4
0.4
0.25
0.25
0.15
0.5
0.5
0.7
0.5
10
10
10
10
10
10
10
10
10
10
hFE1
Device
ID
PD
Watts
One
Die
Only
VCEO
Volts
0.65
0.5
0.625
0.625
0.65
0.75
1.0
0.75
0.625
0.625
0.5
0.5
0.65
0.65
0.5
0.5
0.65
0.65
0.5
0.5
0.75
0.75
0.75
0.75
0.75
40
15
40
40
60
40
40
40
40
60
40
40
30
30
45
30
30
30
45
40
40
250
200
150
250
IC
Amp
Max
hFE @ IC
Min
fT
MHz
Min
Cob
pF
Max
NF @
dB
Max
Typ(1)
Gp
dB
Min
VCE
(sat)
Volts
Max
IC
IC
IB
Case 64606 TO116

MPQ2222A
MPQ2369
MPQ2483
MPQ2484
MPQ2907A
MPQ3467
MPQ3725
MPQ3762
MPQ3798
MPQ3799
MPQ3904
MPQ3906
MPQ6001
MPQ6002
MPQ6100A
MPQ6426
MPQ6501
MPQ6502
MPQ6600A1
MPQ6700
MPQ6842
MPQ7043
MPQ7042
MPQ7051
MPQ7093
NA
NS
NA
NA
PA
PS
NS
PS
PA
PA
NG
PG
CG
CG
CA
ND
CG
CG
CA
CA
CA
NA
NA
CG
PA
0.5
0.5
0.05
0.05
0.6
1.0
1.0
1.5
0.05
0.05
0.2
0.2
0.5
0.5
0.05
0.5
0.5
0.5
0.05
0.2
0.5
0.5
0.5
0.5
0.5
100
40
150
300
100
20
25
35
150
300
75
75
40
100
150
10K
40
100
150
70
70
25
25
25
25
150 m
10 m
1.0 m
1.0 m
150 m
500 m
500 m
150 m
0.1 m
0.1 m
10 m
10 m
150 m
150 m
1.0 m
100 m
150 m
150 m
1.0 m
10 m
10 m
1.0 m
1.0 m
1.0 m
1.0 m
200
450
50
50
200
125
250
150
60
60
250
200
200
200
50
125
200
200
50
200
300
50
50
50
50
150 m
10 m
AUD
AUD
150 m
500 m
500 m
500 m
AUD
AUD
10 m
10 m
150 m
150 m
AUD
100 m
150 m
150 m
1.0 m
1.0 m
0.5 m
20 m
20 m
20 m
20 m
Table 11. PlasticEncapsulated Multiple Transistors Quad Surface Mount

The following table is a listing of the most popular multiple devices available in the plastic SOIC surface mount package.
These devices are available in NPN, PNP, and NPN/PNP configurations.
hFE @ IC
D i
Device
fT @ IC
V(BR)CEO
V(BR)CBO
Min
mA
MHz Min
mA
40
15
50
40
40
60
40
40
40
75
40
60
40
60
60
60
40
40
40
20
50
20
25
300
75
75
70
500
100
500
500
500
0.5
10
10
10
200
450
200
125
250
60
250
200
200
20
10
50
50
50
1.0
10
10
10
Case 751B05 SO16

MMPQ2222A
MMPQ2369
MMPQ2907A
MMPQ3467
MMPQ3725
MMPQ3799
MMPQ3904
MMPQ3906
MMPQ6700 (12)
(1) Typical
(12) NPN/PNP
NOTE: Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.

5.19
PlasticEncapsulated
Surface Mount Transistors
This section of the selector guide lists the smallsignal plastic

devices that are available for surface mount applications.
These devices are encapsulated with the latest
stateoftheart mold compounds that enhance reliability and
exhibit excellent performance in high temperature and high
humidity environments. This package offers higher power
dissipation capability for smallsignal applications.
2
CASE 31808
TO236AB
SOT23
CASE 318D04
SC59
3
1
1
2
CASE 41902
SC70/SOT323
CASE 318E04
SOT223
3
4
3
CASE 419B01
SOT363
CASE 46301
SOT416/SC90
Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors

The following tables are a listing of smallsignal generalpurpose transistors in the SOT23, SC59, SOT223, SC70,
SC90, and SOT363 surface mount packages. These devices are intended for smallsignal amplification for DC, audio,
and lower RF frequencies. They also have applications as oscillators and generalpurpose, low voltage switches.
Pinout: 1Base, 2Emitter, 3Collector
Devices are listed in order of descending breakdown voltage.
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
110
200
100
160
250
110
200
420
100
100
100
110
200
420
220
450
250
400
600
220
450
800
300
300
300
220
450
800
2.0
2.0
100
100
100
2.0
2.0
2.0
150
10
150
2.0
2.0
2.0
100
100
200
200
200
100
100
100
200
200
250
100
100
100
100
125
220
100
100
160
250
125
220
100
100
125
220
420
300
250
475
300
250
400
600
250
475
300
300
250
475
800
1.0
2.0
2.0
150
100
100
100
2.0
2.0
10
150
2.0
2.0
2.0
150
100
100
200
200
200
200
100
100
250
200
100
100
100
Case 31808 TO236AB (SOT23) NPN

BC846ALT1
BC846BLT1
BC81716LT1
BC81725LT1
BC81740LT1
BC847ALT1
BC847BLT1
BC847CLT1
MMBT2222ALT1
MMBT3904LT1
MMBT4401LT1
BC848ALT1
BC848BLT1
BC848CLT1
1A
1B
6A
6B
6C
1E
1F
1G
1P
1AM
2X
1J
1K
1L
65
65
45
45
45
45
45
45
40
40
40
30
30
30
Case 31808 TO236AB (SOT23) PNP

MMBT8599LT1
BC856ALT1
BC856BLT1
MMBT2907ALT1
BC80716LT1
BC80725LT1
BC80740LT1
BC857ALT1
BC857BLT1
MMBT3906LT1
MMBT4403LT1
BC858ALT1
BC858BLT1
BC858CLT1
2W
3A
3B
2F
5A
5B
5C
3E
3F
2A
2T
3J
3K
3L
80
65
65
60
45
45
45
45
45
40
40
30
30
30

5.110
PlasticEncapsulated Surface Mount Transistors (continued)

Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors (continued)
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
25
25
25
20
210
290
120
200
340
460
240
350
2.0
2.0
150
500
150(1)
150(1)
200(1)
200(1)
25
25
25
25
210
290
85
120
340
460
170
240
2.0
2.0
150
150
100(1)
100(1)
200(1)
200(1)
45
45
45
65
65
45
45
45
30
30
30
40
40
20
50
100
160
250
110
200
110
200
420
110
200
420
100
100
70
210
600
400
600
220
450
220
450
800
220
450
800
300
300
140
340
100
100
100
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
10
1.0
2.0
100
100
100
100
100
100
100
100
300
300
150
45
45
65
65
45
45
30
30
30
60
40
45
160
250
125
220
125
220
110
200
420
100
100
210
400
600
250
475
250
475
220
450
800
300
300
340
100
100
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
10
2.0
100
100
100
100
100
100
100
200
250
40
40
100
100
300
300
10
10
300
300
40
40
100
100
300
300
10
10
250
250
Case 318D04 SC59 NPN

MSD601RT1
MSD601ST1
MSD602RT1
MSD1328RT1
YR
YS
WR
1DR
Case 318D04 SC59 PNP

MSB709RT1
MSB709ST1
MSB710QT1
MSB710RT1
AR
AS
CQ
CR
Case 41902 SC70/SOT323 NPN

BC818WT1
BC81825WT1
BC81840WT1
BC846AWT1
BC846BWT1
BC847AWT1
BC847BWT1
BC847CWT1
BC848AWT1
BC848BWT1
BC848CWT1
MMBT2222AWT1
MMBT3904WT1
MSC3930BT1
MSD1819ART1
6I
6F
6G
1A
1B
1E
1F
1G
1J
1K
1L
1P
AM
VB
ZR
Case 41902 SC70/SOT323 PNP

BC80825WT1
BC80840WT1
BC856AWT1
BC856BWT1
BC857AWT1
BC857BWT1
BC858AWT1
BC858BWT1
BC858CWT1
MMBT2907AWT1
MMBT3906WT1
MSB1218ART1
5F
6F
3A
3B
3E
3F
3J
3K
3L
20
2A
BR
Case 419B01 SOT363 Dual NPN

MBT3904DW1T1
MBT3904DW9T1
MA
MB
Case 419B01 SOT363 Dual PNP

MBT3906DW1T1
MBT3906DW9T1
A2
A3
(1) Typical

5.111

Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors (continued)
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
Case 419B01 SOT363 Dual Combination NPN and PNP

MBT3946DW1T1
46
40
100
300
10
250
50
120
560
1.0
180
50
120
560
1.0
140
Case 46301 SOT416/SC90 NPN

2SC4617
B9
Case 46301 SOT416/SC90 PNP

2SA1774
F9
C
(OUT)
B
(IN)
Table 13. PlasticEncapsulated Surface Mount Bias Resistor Transistors

Table 13. for General Purpose Applications
R1
R2
E
(GND)
These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation
of resistors.
NPN
NPN
PNP
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
A6A
A6B
A6C
A6D
A6E
A6F
A6G
A6H
A6J
A6K
A6L
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
Marking
PNP
hFE@ IC
V(BR)CEO
Volts
(Min)
Device
Min
mA
IC
mA
Max
R1
Ohm
R2
Ohm
Case 318D04 SC59

MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
Case 31808 TO236AB (SOT23)

MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L

5.112

Table 13. PlasticEncapsulated Surface Mount Bias Resistor Transistors
for General Purpose Applications (continued)
NPN
NPN
PNP
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
50
50
50
50
50
50
50
50
50
50
50
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
8M
50
50
50
50
50
50
50
50
50
50
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
2.2K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
47K
Marking
PNP
hFE@ IC
V(BR)CEO
Volts
(Min)
Device
Min
mA
IC
mA
Max
R1
Ohm
R2
Ohm
Case 41902 SC70/SOT323

MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
Case 419B01 SOT363 Duals

MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
mA
IC
mA
Max
R1
Ohm
R2
Ohm
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
100
10K
22K
47K
10K
10K
4.7K
1.0K
2.2K
4.7K
4.7K
22K
2.2K
10K
22K
47K
47K
1.0K
2.2K
4.7K
47K
47K
47K
Case 419B01 SOT363 Dual Combination NPN and PNP

MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
11
12
13
14
15
16
3X
31
32
33
34
35
50
50
50
50
50
50
50
50
50
50
50
50
NPN
PNP
V(BR)CEO
Volts
(Min)
94
69
59
43
50
50
50
Device
NPN
35
60
80
80
160
160
3.0
8.0
15
80
80
80
Marking
PNP
hFE@ IC
Min
100
80
15
mA
IC
mA
Max
R1
Ohm
R2
Ohm
1.0
5.0
5.0
100
100
100
10K
10K
4.7K
47K
4.7K
Case 46301 SOT416/SC90

DTC114TE
DTC114YE
DTA114YE
DTA143EE

5.113

Table 14. PlasticEncapsulated Surface Mount Switching Transistors
The following tables are a listing of devices intended for highspeed, low saturation voltage, switching applications. These
devices have very fast switching times and low output capacitance for optimized switching performance.
hFE@ IC
Switching Time (ns)

D i
Device
M ki
Marking
toff
V(BR)CEO
Min
Max
mA
fT
MHz Min
18
18
18
15
15
12
20
20
40
120
100
100
10
400
25
35
12
20
50
500
20
40
20
40
180
1.0
200
ton

MMBT2369LT1
MMBT2369ALT1
BSV52LT1
M1J
1JA
B2
12
12
12

MMBT3640LT1
2J
Pinout: 1Emitter, 2Base, 3Collector

MSC1621T1
RB
Table 15. PlasticEncapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators

The following table is a listing of devices intended for smallsignal RF amplifier applications to VHF/UHF frequencies. These
devices may also be used as VHF/UHF oscillators and mixers.
D i
Device
M ki
Marking
fT @ IC
V(BR)CEO
Ccb(13)
pF Max
GHz Min
mA
25
15
30
0.7
1.7(14)
0.45
0.65
0.6
0.4
4.0
4.0
8.0
20
15
0.85
0.35(13)
0.6
2.0
5.0
10
20
20
20
10
1.5(13)
1.5(13)
1.0(13)
0.15
0.15
0.45
1.4
1.0
1.0
1.0
5.0
20
20
2.0(13)
2.0(13)
0.15
0.15
1.0
1.0
20
0.85(13)
0.6
5.0

MMBTH10LT1
MMBT918LT1
MMBTH24LT1
3EM
M3B
M3A

MMBTH81LT1
MMBTH69LT1
3D
M3J
Pinout: 1Emitter, 2Base, 3Collector

MSC2295BT1
MSC2295CT1
MSC2404CT1
MSC3130T1
VB
VC
UC
1S
Case 318D04 SC59 PNP

MSA1022BT1
MSA1022CT1
EB
EC
Case 41902 SC70/SOT323 PNP

MSB81T1
J3D
(13) C
re
(14) C
ob

5.114

Table 16. PlasticEncapsulated Surface Mount Choppers
The following table is a listing of smallsignal devices intended for chopper applications where a higher than normal
V(BR)CEO is required in the circuit application.
hFE @ IC
D i
Device
M ki
Marking
V(BR)CEO
V(BR)EBO
Min
Max
mA
25
30
400
12

MMBT404ALT1
2N
35
Table 17. PlasticEncapsulated Surface Mount Darlingtons

The following table is a listing of smallsignal devices that have very high hFE and input impedance characteristics. These
devices utilize monolithic, cascade transistor construction.
Devices are listed in order of descending hFE.
D i
Device
M ki
Marking
V(BR)CES
hFE @ IC
VCE(sat)
Volts Max
Min
Max
mA
1.5
1.5
20K
10K
100
100
1.5
20K
100

MMBTA14LT1
MMBTA13LT1
1N
1M
30
30

MMBTA64LT1
2V
30
Table 18. PlasticEncapsulated Surface Mount LowNoise Transistors

The following table is a listing of smallsignal devices intended for low noise applications in the audio range. These devices
exhibit good linearity and are candidates for hifi and instrumentation equipment.
Devices are listed in order of ascending NF.
D i
Device
M ki
Marking
NF
dB Typ
hFE@ IC
V(BR)CEO
Min
Max
mA
fT
MHz Min
25
60
50
45
400
250
500
800
10
10
10
10
50
100
100
50
250
10
40

MMBT5089LT1
MMBT2484LT1
MMBT6428LT1
MMBT6429LT1
1R
1U
1KM
1L
2.0(15)
3.0(15)
3.0
3.0

MMBT5087LT1
2Q
2.0(15)
(15) Max

5.115

Table 19. PlasticEncapsulated Surface Mount HighVoltage Transistors
The following table is a listing of smallsignal highvoltage devices designed for direct line operation requiring high voltage
breakdown and relatively low current capability.
hFE@ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
fT
MHz Min
15
40
30
100
30
50
40
50
100
15
25
50
100
30
50
40
50
100

MMBT6517LT1
MMBTA42LT1
MMBT5551LT1
1Z
1D
G1
350
300
160

MMBT6520LT1
MMBTA92LT1
MMBT5401LT1
2Z
2D
2L
350
300
150
Table 20. PlasticEncapsulated Surface Mount Drivers

The following is a listing of smallsignal devices intended for medium voltage driver applications at fairly high current levels.
hFE@ IC
D i
Device
M ki
Marking
V(BR)CEO
VCE(sat)
VBE(sat)
Min
Max
mA
0.25
0.15
100
20
100
10
0.25
0.25
0.90
30
100
25
100

MMBTA06LT1
BSS64LT1
1GM
AM
80
80

BSS63LT1
MMBTA56LT1
T1
2GM
100
80
The following devices are designed to conserve energy. They offer ultralow collector saturation voltage.
MMBT1010LT1
GLP
15
0.1
1.1
300
600
100
15
0.1
1.1
300
600
100
Case 31803 SC59 PNP

MSD1010T1
GLP
Table 21. PlasticEncapsulated Surface Mount General Purpose Amplifiers

Pinout: 1Base, 2Collector, 3Emitter, 4Collector
hFE@ IC
D i
Device
M ki
Marking
V(BR)CEO
Min
Max
mA
BH
80
40
250
150
80
40
25
150
Case 318E04 SOT223 NPN

BCP56T1
Case 318E04 SOT223 PNP

Pinout: 1Gate, 2Drain, 3Source, 4Drain
BCP53T1
AH

5.116

Table 22. PlasticEncapsulated Surface Mount Switching Transistors
hFE
Device
M ki
Marking
ton
toff
35
285
45
100
V(BR)CEO
fT
Min
Max
@ IC (mA)
Min (MHz)
40
100
300
20
300
60
100
300
50
200

PZT2222AT1
P1F

PZT2907AT1
P2F
Table 23. PlasticEncapsulated Surface Mount Darlingtons

Device
hFE
M ki
Marking
V(BR)CER
VCE(sat)
Max (V)
Min
Max
@ IC (mA)
( A)
AS3
P1N
80
30
1.3
1.5
2000
20k
500
100
BS3
P2V
90
30
1.3
1.5
2000
20k
500
100

BSP52T1
PZTA14T1

BSP62T1
PZTA64T1
Table 24. PlasticEncapsulated Surface Mount HighVoltage Transistors

hFE
Device
fT
M ki
Marking
V(BR)CEO
Min
Max
@ IC (mA)
Min (MHz)
SP19A
P1D
BF720
SP20A
350
300
250
250
40
40
50
40
20
10
10
20
70
50
60
70
ZTA96
P2D
BSP16
BF721
450
300
300
250
50
40
30
50
150
150
10
10
10
10
50
50
15
60

BSP19AT1
PZTA42T1
BF720T1
BSP20AT1

PZTA96T1
PZTA92T1
BSP16T1
BF721T1
Table 25. PlasticEncapsulated Surface Mount High Current Transistors

D i
Device
hFE@ IC
M ki
Marking
V(BR)CEO
VCE(sat)
Volts
651
CA
60
20
0.5
0.5
75
60
1000
1000
ZT751
CE
60
20
0.5
0.5
75
60
1000
1000
Min
Max
mA

PZT651T1
BCP68T1

PZT751T1
BCP69T1

5.117
MetalCan
Transistors
Metalcan packages are intended for use in industrial
applications where harsh environmental conditions are
encountered. These packages enhance reliability of the end
products due to their resistance to varying humidity and
extreme temperature ranges.
3 2
1
CASE 2203
TO206AA
(TO18)
STYLE 1
2 1
CASE 7904
TO205AD
(TO39)
STYLE 1
Table 26. MetalCan GeneralPurpose Transistors

These transistors are designed for DC to VHF amplifier applications, generalpurpose switching applications, and
complementary circuitry. Devices are listed in decreasing order of V(BR)CEO within each package group.
Device
D
i
Type
V(BR)CEO
Volts
Min
fT @ IC
MHz
Min
hFE @ IC
mA
IC
mA
Max
Min
Max
mA
50
10
10
20
10
1000
200
200
800
200
50
110
200
100
420
450
450
300
800
500
2.0
2.0
150
2.0
50
50
10
10
600
600
200
200
40
100
100
180
120
300
300
460
150
150
10
2.0
50
50
50
20
1000
1000
500
800
100
40
40
100
300
120
120
300
150
150
150
150
50
50
50
1000
1000
600
600
1000
25
40
40
100
40
140
120
300
1000
150
150
150
1000

2N3700
BC107
BC107B
2N2222A
BC109C
80
45
45
40
25
80
150
150
300
150

2N2906A
2N2907A
2N3251A
BC177B
60
60
60
45
200
200
300
200
Case 7904 TO205AD (TO39) NPN

2N3019
2N3020
2N1893
2N2219A
80
80
80
40
100
80
50
300
Case 7904 TO205AD (TO39) PNP

2N4033
2N4036
2N2904A
2N2905A
2N4032
80
65
60
60
60
60
200
200

5.118
MetalCan Transistors (continued)

Table 27. MetalCan HighGain/LowNoise Transistors
These transistors are characterized for highgain and lownoise applications. Devices are listed in decreasing order of NF.
Device
D
i
Type
NF
Wideband
dB
Typ Max
V(BR)CEO
Volts
Min
fT @ IC
hFE @ IC
IC
mA
Max
Min
Max
A
mA
MHz
Min
mA
50
30
30
100
500
600
600
10
10
10
15
45
30
0.05
0.5
0.5
200
50
250
300
600
900
1.0(24)
500
50
30
0.5
0.5

2N2484
2N930A
2N930
8.0(1)
3.0
3.0
60
45
45

2N3964
2N3799
4.0
2.5
45
60
Table 28. MetalCan HighVoltage/HighCurrent Transistors

The following table lists Motorola standard devices that have high collectoremitter breakdown voltage. Devices are listed in
decreasing order of V(BR)CEO within each package type.
Device
D
i
Type
V(BR)CEO
Volts
Min
hFE @ IC
IC
mA
Max
Min
fT @ IC
VCE(sat) @ IC & IB
mA
Volts
Max
mA
mA
MHz
Min
mA
30
30
0.5
1.0
20
50
2.0
5.0
50
50
10
20
30
0.5
50
5.0
50
20
50
0.5
50
5.0
200
30

2N6431
BSS73
300
300
50
500
50
40

BSS76
300
500
35

2N3637
175
1000
100
(1) Typical
(24) T = 25C
A
Table 29. MetalCan Switching Transistors

The following devices are intended for use in generalpurpose switching and amplifier applications. Within each package
group shown, the devices are listed in order of decreasing turnon time (ton).
ton & toff @ IC
Device
D
i
Type
ns
Max
ns
Max
mA
V(BR)CEO
Volts
Min
hFE @ IC
IC
mA
Max
Min
15
15
200
500
40
1000
VCE(sat) @ IC @ IB
mA
fT
MHz
Min
IC
mA
10
10
1.0
1.0
500
500
10
10
500
50
175
50
mA
Volts
Max
mA
40
20
10
10
0.2
0.25
40
500
0.5

2N2369A
BSX20
12
7.0
18
21
10
100

2N3467
40
90
500

5.119
FieldEffect Transistors
JFETs
JFETs operate in the depletion mode. They are available in
both P and Nchannel and are offered in both Throughhole
and Surface Mount packages. Applications include general
purpose amplifiers, switches and choppers, and RF amplifiers
and mixers. These devices are economical and very
rugged. The drain and source are interchangeable on many
typical FETs.
CASE 2904
TO226AA
(TO92)
23
Table 30. JFET LowFrequency/LowNoise

The following table is a listing of smallsignal JFETs intended for lownoise applications in the audio range. These devices
exhibit good linearity and are candidates for hifi and instrumentation equipment.
Re Yfs
D i
Device
mmho
Min
@f
Re Yos @ f
mho
Max
kHz
kHz
IDSS
mA
VGS(off)
Volts
Crss
pF
Max
V(BR)GSS
V(BR)GDO
Volts
Min
Min
Max
Min
Max
S l
Style
7.0
6.0
7.0
7.0
3.0
3.0
3.0
3.0
40
25
50
25
25
0.8
1.0
0.5
2.0
4.0
7.0
4.0
6.0
8.0
0.9
2.0
0.5
1.0
4.0
4.5
9.0
2.5
5.0
16
5
5
5
5
5
7.0
7.0
7.0
2.0
2.0
2.0
40
40
40
0.75
1.0
1.8
6.0
7.5
9.0
1.0
2.0
4.0
5.0
9.0
16
7
7
7
Ciss
pF
Max
Case 2904 TO226AA (TO92) NChannel

J202
2N5458
MPF3821
2N5457
2N5459
1.5
1.5
1.0
2.0
1.0
1.0
1.0
1.0
50
10
50
50
1.0
1.0
1.0
1.0
Case 2904 TO226AA (TO92) PChannel

2N5460
2N5461
2N5462
1.0
1.5
2.0
1.0
1.0
1.0
75
75
75
1.0
1.0
1.0
Table 31. JFET HighFrequency Amplifiers

The following is a listing of smallsignal JFETs that are intended for hifrequency applications. These are candidates for
VHF/UHF oscillators, mixers and frontend amplifiers.
Re Yfs @ f
D i
Device
mmho
Min
MHz
Re Yos @ f
mho
Max
MHz
Ciss
pF
Max
Crss
pF
Max
dB
Max
f
MHz
V(BR)GSS
V(BR)GDO
Volts
Min
2.5
3.0
4.0
4.0
1.5(1)
1.5(1)
1.5(1)
100
100
400
400
100
100
100
25
25
25
25
25
25
25
25
NF @ RG = 1K
VGS(off)
Volts
IDSS
mA
Min
Max
Min
Max
S l
Style
0.2
0.3
0.5
2.0
1.0
1.0
2.0
8.0
4.0
3.0
4.0
6.0
6.5
4.0
6.5
2.0
1.0
1.0
4.0
8.0
12
12
24
20
5.0
5.0
10
20
60
30
60
5
5
5
5
5
5
5
5

MPF102
2N5668
2N5484
2N5485
2N5486
J308
J309
J310
1.6
1.0
2.5
3.0
3.5
12(1)
12(1)
12(1)
100
100
100
400
400
100
100
100
200
50
75
100
100
250(1)
250(1)
250(1)
100
100
100
400
400
100
100
100
7.0
7.0
5.0
5.0
5.0
7.5
7.5
7.5
3.0
3.0
1.0
1.0
1.0
2.5
2.5
2.5
(1) Typical

5.120
JFETs (continued)
Table 32. JFET Switches and Choppers
The following is a listing of JFETs intended for switching and chopper applications.
RDS(on) @ ID
D i
Device
Max
mA
VGS(off)
Volts
Min
Max
IDSS
mA
Min
Max
V(BR)GSS
V(BR)GDO
Volts
Min
50
50
20
20
20
5.0
25
25
8.0
5.0
5.0
2.0
15
30
60
10
100
100
75
80
30
80
140
40
30
35
40
30
35
30
30
30
30
30
35
25
25
25
25
18
18
28
18
18
28
10
10
18
10
10
28
5.0
8.0
8.0
5.0
8.0
8.0
5.0
3.5
4.0
8.0
3.5
4.0
5.0
1.2
9.0
9.0
10
10
15
20
15
18
10
25
25
50
50
35
100
55
45
25
5
5
5
5
5
5
5
5
5
5
5
5
5
22
22
5
15
2.0
100
50
30
30
12
12
5.0
5.0
8.0
10
25
120
5
5
Ciss
pF
Max
Crss
pF
Max
ton
ns
Max
toff
ns
Max
S l
Style

MPF4856
MPF4859
J111
MPF4857
MPF4860
J112
MPF4392
2N5639
MPF4861
MPF4393
2N5640
J113
2N5555
BF246A
BF246B
J110
25
25
30
40
40
50
60
60
60
100
100
100
150
35(1)
50(1)
18
1.0
1.0
1.0
1.0
4.0
4.0
3.0
2.0
2.0
1.0
0.8
0.5
0.6
0.6
0.5
10
10
10
6.0
6.0
5.0
(8.0)(1)
4.0
(12)(1)
(6.0)(1)
3.0
1.0(16)
14
14
4.0
Case 2904 TO226AA (TO92) PChannel

MPF970
MPF971
100
250
1.0
1.0
5.0
1.0
12
7.0
(1) Typical
(16) V
GS(f)

5.121
CASE 2905
TO226AE
1WATT (TO92)
TMOS FETs
1
3
D
CASE 2904
TO226AA
(TO92)
2 3
G
S
Table 33. TMOS Switches and Choppers

The following is a listing of smallsignal TMOS devices that are intended for switching and chopper applications. These
devices offer low RDS(on) characteristics.
VGS(th)
Volts
RDS(on) @ ID
D i
Device
Max
Min
Max
V(BR)DSS
Volts
Min
Ciss
pF
Max
Crss
pF
Max
ton
ns
Max
toff
ns
Max
S l
Style
15
15
5.0
15
5.0
5.0
10
15
15
5.0
15
5.0
5.0
10
22
22
22
22
22
22
22
22
30
10
10
10
8.0
8.0
6.0(1)
30
10
10
10
18
23
12(1)
15
20
10
8.0
15
15
20
10
23
15
22
22
30
22
22
22
7
30
22
22
22
30
Case 2905 TO226AE (1WATT TO92) NChannel

MPF930
MPF960
MPF6659
MPF990
MPF6660
MPF6661
MPF910
VN10LM
1.4
1.7
1.8
2.0
3.0
4.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
1.0
1.0
0.8
1.0
0.8
0.8
0.3
0.8
3.5
3.5
2.0
3.5
2.0
2.0
2.5
2.5
35
60
35
90
60
90
60
60
70(1)
70(1)
30(1)
70(1)
30(1)
30(1)
20(1)
20(1)
4(1)
20(1)
4(1)
4(1)
60
5.0
2.5
3.0
3.0
2.5
2.0
2.0
2.7
3.0
2.5
2.5
2.0
3.0
60
60
60
60
170
240
200
200
60
60
240
200
100
60
25(1)
60
125
125
72(1)
60(1)
25
5.0
3.0(1)
5.0
20
20
3.0(1)
6.0(1)
50
60
125
60(1)
5.0
5.0
20
6.0(1)

VN0300L
2N7000
BS170
VN0610LL
VN1706L
VN2406L
BSS89
BS107A
2N7008
VN2222LL
VN2410L
BS107
1.2
5.0
5.0
5.0
6.0
6.0
6.0
6.4
7.5
7.5
10
14
1.0
0.5
0.2
0.5
0.5
0.5
0.30
0.25
0.5
0.5
0.5
0.2
0.8
0.8
0.8
0.8
0.8
0.8
1.0
1.0
1.0
0.6
0.8
1.0
(1) Typical

5.122
Surface Mount FETs
CASE 31808
TO236AB
SOT23
This section contains the FET plastic packages available for

surface mount applications. Most of these devices are the
most popular metalcan and insertion type parts carried over
to the new surface mount packages.
1
2
CASE 41902
SC70/SOT323
4
4
3
CASE 419B01
SOT363
1
CASE 318E04
SOT223
Table 34. Surface Mount RF JFETs

The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications.
Pinout: 1Drain, 2Source, 3Gate
NF
D i
Device
M ki
Marking
dB
Typ
Yfs @ VDS
f
MHz
mmhos
Min
mmhos
Max
Volts
V(BR)GSS
S l
Style
450
450
450
100
100
100
10
8.0
10
4.5
3.0
4.0
20
18
18
7.5
6.0
8.0
10
10
10
15
15
15
25
25
25
30
25
25
10
10
10
10
10
10
100
4.5
7.5
15
30
Case 31808 TO236AB (SOT23) NChannel

MMBFJ309LT1
MMBFJ310LT1
MMBFU310LT1
MMBF4416LT1
MMBF5484LT1
MMBF5486LT1
6U
6T
M6C
M6A
M6B
6H
1.5
1.5
1.5
2(3)
2.0
2.0
Case 419B01 SOT363 Dual NChannel

MBF4416DW1T1
M6
2.0
(3) Max
Table 35. Surface Mount GeneralPurpose JFETs

The following table is a listing of surface mount smallsignal general purpose FETs. These devices are intended for
smallsignal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and
generalpurpose, lowvoltage switches.
Yfs @ VDS
D i
Device
M ki
Marking
V(BR)GSS
mmhos
Min
IDSS
mmhos
Max
Volts
mA
Min
mA
Max
S l
Style
5.0
6.0
15
15
1.0
4.0
5.0
16
10
10
1.0
4.0
15
1.0
5.0
10
1.0
5.0
15
1.0
5.0

MMBF5457LT1
MMBF5459LT1
6D
6L
25
25
1.0
2.0
Case 31808 TO236AB (SOT23) PChannel

MMBF5460LT1
M6E
40
Case 419B01 SOT363 Dual NChannel

MBF5457DW1T1
6D
25
(3) Max

5.123
Surface Mount FETs (continued)

Table 36. Surface Mount Choppers/Switches JFETs
The following is a listing of smallsignal surface mount JFET devices intended for switching and chopper applications.
D i
Device
M ki
Marking
RDS(on)
Ohms
Max
toff
ns
Max
VGS(off)
IDSS
V(BR)GSS
Volts
Min
Volts
Max
mA
Min
mA
Max
S l
Style
40
30
30
30
30
4.0
4.0
2.0
2.0
0.5
10
10
6.0
5.0
3.0
50
50
20
25
5.0
150
100
75
30
10
10
10
10
10
30
30
3.0
0.8
6.0
2.5
7.0
1.5
60
20
10
10

MMBF4856LT1
MMBF4391LT1
MMBF4860LT1
MMBF4392LT1
MMBF4393LT1
AAA
6J
6F
6K
6G
25
30
40
60
100
25
20
50
35
50
Case 31808 TO236AB (SOT23) PChannel

MMBFJ175LT1
MMBFJ177LT1
6W
6Y
125
300
Table 37. TMOS FETs

The following is a listing of smallsignal surface mount TMOS FETs which exhibit low RDS(on) characteristics.
Pinout: 1Gate, 2Source, 3Drain
RDS(on) @ ID
D i
Device
M ki
Marking
VGS(th)
Switching Time
VDSS
Volts
Min
Volts
Max
ton ns
toff ns
S l
Style
60
100
50
60
20
20
30
0.8
0.8
0.5
1.0
1.0
1.0
1.0
3.0
2.8
1.5
2.5
2.4
2.4
2.4
10
20
20
20
2.5
2.5
2.5
10
40
20
20
15
16
16
21
21
21
21
21
21
21
50
20
20
20
1.0
1.0
1.0
0.7
2.4
2.0
2.4
1.0
2.5
2.5
2.5
2.5
16
16
16
16
21
21
21
21
mA
VDSS
Volts
Min
Volts
Max
ton ns
toff ns
S l
Style
1000
1000
200
200
60
90
240
200
1.0
0.8
0.8
1.0
3.5
2.0
2.0
3.0
15
5.0
15
15
5.0
15
3
3
3
3
20
1.0
2.4
2.5
15
20
1.0
2.4
2.5
16
Ohm
mA

MMBF170LT1
BSS123LT1
BSS138LT1
2N7002LT1
MMBF0201NLT1
MGSF1N02LT1
MGSF1N03LT1
6Z
SA
J1
702
N1
N2
N3
5.0
6.0
3.5
7.5
1.0
0.085
0.09
200
100
200
500
300
1200
1200
Case 31808 TO236 (SOT23) PChannel

BSS84LT1
MMBF0202PLT1
MGSF1P02LT1
MGSF1P02ELT1
PD
P3
PC
PE
6.0
1.4
0.35
0.16
100
200
1500
1500
Pinout: 1Gate, 2Drain, 3Source, 4Drain

RDS(on)
D i
Device
M ki
Marking
Ohm
VGS(th)
Switching Time
Case 318E04 SOT223 NChannel

MMFT960T1
MMFT6661T1
MMFT2406T1
MMFT107T1
FT960
T6661
T2406
FT107
1.7
4.0
10
14
Case 41902 SC70/SOT323 NChannel

MMBF2201NT1
N1
1.0
300
Case 41902 SC70/SOT323 PChannel

MMBF2202PT1
P3
2.2
200

5.124
Tuning and Switching Diodes

CASE 2904
TO226AA
(TO92)
Tuning Diodes
Abrupt Junction
Motorola supplies voltagevariable capacitance diodes serving

the entire range of frequencies from HF through UHF. Used in RF
receivers and transmitters, they have a variety of applications,
including:
Phaselocked loop tuning systems
Local oscillator tuning
Tuned RF preselectors
RF filters
RF phase shifters
RF amplifiers
Automatic frequency control
Video filters and delay lines
Harmonic generators
FM modulators
Two families of devices are available: Abrupt Junction and Hyper
Abrupt Junction. The Abrupt Junction family includes devices
suitable for virtually all tunedcircuit and narrowrange tuning
applications throughout the spectrum.
3
2
STYLE 15
23
CASE 5102
DO204AA
(DO7)
CASE 18202
TO226AC
(TO92)
2
STYLE 1
2
Cathode
1
Anode
STYLE 1
1
2
3
Cathode
3
CASE 31808
TO236AB
SOT23
1
Anode
STYLE 8
1
3
2
3
STYLE 9
CASE 46301
SOT416/SC90
Typical Characteristics
Diode Capacitance versus Reverse Voltage
100
1000
50
C T , DIODE CAPACITANCE (pF)
70
1N5148,A
30
20
1N5144,A
10
1N5140,A
7
5
TA = 25C
f = 1 MHz
1N5450A
MV1638
1N5456A
MV1650
100
(See Tables 38 Thru 40)
10
1N5441A
MV1620
3
1
2
0.6 1
2
4 6 10
20 40 60
VR, REVERSE VOLTAGE (VOLTS)
1N5452A
MV1642
0.1
1N5445A
MV1628
1
10
100
MV2109
MMBV2109LT1
100
1000
MV2115
100
10
MV2101
MMBV2101LT1
1
0.1
MV2105
MMBV2105LT1
1
10
100
70
40
MV104G
MMBV432LT1
MV104
20
TA = 25C
f = 1 MHz
EACH DIODE
10
0.3
0.5
(See Tables 41 and 42)
1
2
3
5
10
20
30
(See Table 43)
5.125
Tuning Diodes Abrupt Junction (continued)

Table 38. GeneralPurpose Glass Abrupt Tuning Diodes
High Q Capacitance Ratio @ 4.0 Volts/60 Volts
The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz
D i (19)
Device
pF
Min
pF
Nominal
pF
Max
V(BR)R
Volts
Cap Ratio
C4/C60
Min
Q
4.0 V, 50 MHz
Min
6.1
9.0
16.2
19.8
24.3
42.3
6.8
10
18
22
27
47
7.5
11
19.8
24.2
29.7
51.7
60
60
60
60
60
60
2.7
2.8
2.8
3.2
3.2
3.2
350
300
250
200
200
200
Case 5102 DO204AA (DO7)

1N5139
1N5140
1N5143
1N5144
1N5145
1N5148

High Q Capacitance Ratio @ 2.0 Volts/30 Volts
The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit very high Q
characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Device
D
i (20)
pF
Min
pF
Nominal
pF
Max
VR(BR)R
Volts
Cap Ratio
C2/C30
Min
Q
4.0 V, 50 MHz
Min
6.1
10.8
16.2
19.8
24.3
29.7
35.1
42.3
50.4
73.8
90
6.8
12
18
22
27
33
39
47
56
82
100
7.5
13.2
19.8
24.2
29.7
36.3
42.9
51.7
61.6
90.2
110
30
30
30
30
30
30
30
30
30
30
30
2.5
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.7
2.7
450
400
350
350
350
350
300
250
200
175
175

1N5441A
1N5444A
1N5446A
1N5448A
1N5449A
1N5450A
1N5451A
1N5452A
1N5453A
1N5455A
1N5456A
(19)Suffix A = 10.0%
(20)Suffix B = 5.0%
5.126

Capacitance Ratio @ 2.0 Volts/20 Volts
The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz
D i
Device
pF
Min
pF
Nominal
pF
Max
V(BR)R
Volts
Cap Ratio
C2/C20
Min
Q
4.0 V, 50 MHz
Typ
6.1
9.0
10.8
13.5
16.2
19.8
24.3
29.7
35.1
42.3
50.4
73.8
90
6.8
10
12
15
18
22
27
33
39
47
56
82
100
7.5
11
13.2
16.5
19.8
24.2
29.7
36.3
42.9
51.7
61.6
90.2
110
20
20
20
20
20
20
20
20
20
20
20
20
20
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
300
300
300
250
250
250
200
200
200
200
150
150
150

MV1620
MV1624
MV1626
MV1628
MV1630
MV1634
MV1636
MV1638
MV1640
MV1642
MV1644
MV1648
MV1650
Table 41. GeneralPurpose Plastic Abrupt Tuning Diodes

The following is a listing of plastic package, generalpurpose, abrupt tuning diodes. These devices exhibit high Q
characteristics.
CT @ VR = 4.0 V, 1.0 MHz
D i
Device
pF
Min
pF
Nominal
pF
Max
VR(BR)R
Volts
Cap Ratio
C4/C30
Min
Q
4.0 V, 50 MHz
Typ
6.8
10
12
15
22
27
33
47
68
82
100
7.5
11
13.2
16.5
24.2
29.7
36.3
51.7
74.8
90.2
110
30
30
30
30
30
30
30
30
30
30
30
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.6
400
350
350
350
300
250
200
150
150
100
100
Case 18202 TO226AC (TO92) 2Lead

MV2101
MV2103
MV2104
MV2105
MV2107
MV2108
MV2109
MV2111
MV2113
MV2114
MV2115
6.1
9.0
10.8
13.5
19.8
24.3
29.7
42.3
61.2
73.8
90

5.127

Table 42. Surface Mount Abrupt Tuning Diodes
The following is a listing of surface mount abrupt junction tuning diodes intended for generalpurpose variable capacitance
circuit applications.
CT @ VR = 4.0 V, 1.0 MHz
Device
D i
pF
pF
pF
Min
Nominal
Max
VR(BR)R
Volts
6.1
9.0
10.8
13.5
19.8
24.3
29.7
6.8
10
12
15
22
27
33
7.5
11
13.2
16.5
24.2
29.7
36.3
30
30
30
30
30
30
30
Cap Ratio
C2/C30
4.0 V, 50 MHz
Min
Typ
2.5
2.5
2.5
2.5
2.5
2.5
2.5
400
350
350
350
300
250
200
Case 31808 DO236AB (SOT23)

MMBV2101LT1
MMBV2103LT1
MMBV2104LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
Table 43. Abrupt Tuning Diodes for FM Radio Dual

The following is a listing of abrupt tuning diodes that are available as dual units in a single package.
CT @ VR(22)
D i
Device
pF
Min
pF
Max
42
Volts
Cap Ratio
C3/C30
Min
Q
3.0 V, 50 MHz
Min
V(BR)R
Volts
D i
Device
Marking
S l
Style
3.0
2.5
100
32
15
2.0
1.5(21)
100
14
M4B

MV104
37

MMBV432LT1
43
48.1
(21)C2/C8
(22)Each Diode

5.128
Tuning Diodes
HyperAbrupt Junction
The HyperAbrupt family exhibits higher capacitance, and a

much larger capacitance ratio. It is particularly well suited for
widerrange applications such as AM/FM radio and TV tuning.
CASE 5102
DO204AA
(DO7)
1
Cathode
CASE 18202
TO226AC
(TO92)
2
Anode
CASE 31808
TO236AB
SOT23
3
Cathode
2
Anode
STYLE 1
1
Cathode
STYLE 1
3
1
1
Anode
STYLE 8
4
CASE 318E04
SOT223
1
2
2, 4
STYLE 2
Diode Capacitance versus Reverse Voltage
40
36
16
14
C T , CAPACITANCE (pF)
20
18
MMBV105GLT1
12
10
8
TA = 25C
f = 1 MHz
6
4
2
0
32
28
MMBV109LT1
MV209
24
20
16
12
8
4
0.3
0.5
10
20
30
10
30
Figure 1. Diode Capacitance
5.129
100
Tuning Diodes HyperAbrupt Junction (continued)

10
9
40
32
MMBV409LT1
MV409
24
16
8
0
1
10
20
8
7
6
MMBV809LT1
5
4
3
2
1
0
0.5 1
50
36
32
28
40
MMBV3102LT1
24
20
16
12
TA = 25C
f = 1 MHz
8
4
0
0.3
0.5
10
20
40
f = 1 MHz
20
10
30
MMBV609LT1
30
10
20

Each Die
500
500
100
50
30
40
MVAM109/MV7005T1
1000
MVAM108
1000
10
3 4 5
8 10
15
100
50
10
Figure 7. Capacitance versus Reverse Voltage
5.130

MVAM115
MVAM125
500
500
1000
1000
100
50
10
6
10
14
100
50
10
18
10
14
18
22
26
500
TA = 25C
f = 1 MHz
300
200
100
MV1405
50
30
20
MV1403
10
MV1404
1
MV7404T1
3
4
10
Figure 11. Diode Capacitance versus Reverse Voltage

Table 44. HyperAbrupt Tuning Diodes for Telecommunications Single
The following is a listing of hyperabrupt tuning diodes intended for high frequency, FM radio, and TV tuner applications.
CT @ VR (f = 1.0 MHz)
D i
Device
pF
Min
pF
Max
Cap Ratio @ VR
Q
50 MHz
Max
V(BR)R
Volts
Device
D
i
Marking
Case
C
Style
CV
Curve
Fig
Volts
Min
Max
Volts
3.0 V
Min
3.0
3.0
5.0
1.5
6.5
2.0
3/25
3/8
200
200
30
20
1
1
2
3
25
3.0
3.0
2.0
3.0
4.0
5.0
1.5
1.8
4.5
6.5
6.5
1.9
2.6
3/25
3/25
3/8
2/8
3/25
200
200
200
300
200
30
30
20
20
30
M4E
M4A
X5
5K
M4C
8
8
8
8
8
1
2
3
4
5
3.0
5.0
6.5
3/25
200
30
M4A
Case 18202 TO226AC (TO92)

MV209
MV409
26
26
32
32

MMBV105GLT1
MMBV109LT1
MMBV409LT1
MMBV809LT1
MMBV3102LT1
1.5
26
26
4.5
20
2.8
32
32
6.1
25

MBV109T1
26
32

5.131

Table 45. HyperAbrupt Tuning Diodes for Communications Dual
CT @ VR (f = 1.0 MHz)
D i
Device
pF
Min
pF
Max
Cap Ratio @ VR
Volts
Min
Max
Volts
3.0 V
Min
3.0
1.8
2.4
3/8
250
50 MHz
Max
V(BR)R
Volts
Device
D
i
Marking
Case
C
Style
CV
Curve
Fig
20
5L

MMBV609LT1
26
32
Table 46. HyperAbrupt Tuning Diodes for Low Frequency Applications Single
The following is a listing of AM, hyperabrupt tuning diodes that have a large capacity range and are designed for low
frequency circuit applications.
CT @ 1.0 MHz
D i
Device
pF
Min
Cap Ratio @ VR
pF
Max
Volts
Min
560
520
560
560
1.0
1.0
1.0
1.0
15
12
15
15
Volts
V(BR)R
Volts
S l
Style
CV
Curve
Figure
1.0/8.0
1.0/9.0
1.0/15
1.0/25
12
15
18
28
1
1
1
1
7
8
9
10

MVAM108
MVAM109
MVAM115
MVAM125
440
400
440
440
Table 47. HyperAbrupt High Capacitance Voltage Variable Diode Surface Mount
The following are high capacitance voltage variable diodes intended for low frequency applications and circuits requiring
large tuning capacitance.
CT @ f = 1.0 MHz
D i
Device
V(BR)R
Volts
IR
nA
Min
pF
Max
pF
Cap Ratio
C
R i
Min
Q
Min
S l
Style
CV
Curve
Figure
400
96
520
144
12(26)
10(27)
150(28)
200(29)
2
2
8
11
Case 318E04 SOT223

Pinout: 1Anode, 2, 4Cathode, 3NC
MV7005T1
MV7404T1
15
12
100
100
Table 48. HyperAbrupt High Capacitance Tuning Diodes Axial Lead Glass Package
CT @ VR
D i
Device
pF
Min
pF
Max
144
210
300
Volts
Cap Ratio
C2/C10
Min
Q
2.0 V, 1.0 MHz
Min
V(BR)R
Volts
Style
CV
Curve
Figure
2.0
2.0
2.0
10
10
10
200
200
200
12
12
12
1
1
1
11
11
11

MV1404
MV1403
MV1405
96
140
200
(26) V = 1.0 V/V = 9.0 V

R
R
(27) V = 2.0 V/V = 10 V
R
R
(28) V = 1.0 V, f = 1.0 MHz
R
(29) V = 2.0 V, f = 1.0 MHz
R

5.132
Schottky Diodes
CASE 18202
TO226AC
(TO92)
Schottky diodes are ideal for VHF and UHF mixer and detector
applications as well as many higher frequency applications.
They provide stable electrical characteristics by eliminating
the pointcontact diode presently used in many applications.
CASE 42504
SOD123
STYLE 1
STYLE 1
2
2
Cathode
1
Cathode
1
Anode
CASE 41902
SC70/SOT323
1
Single
3
1
2
Anode
CASE 419B01,
STYLE 6
SOT363
CASE 31808
TO236AB
SOT23
2
STYLE 8
STYLE 9
STYLE 11
3 1
21
Single
Series
3
Common Cathode
STYLE 12
STYLE 19
Cathode
1
Anode
3
1
Series
3
2
Cathode
Capacitance versus Reverse Voltage
2.8
TA = 25C
MBD101
MMBD101LT1
MMBD352LT1*
MMBD353LT1*
MMBD354LT1*
0.9
TA = 25C
2.4
0.8
0.7
2
MBD301,
MMBD301LT1
1.6
1.2
0.8
0.4
0.6
MBD701, MMBD701LT1
0
0
* EACH DIODE
10
15
20
25
30
35
40
45
50
(See Table 49)

5.133
Schottky Diodes (continued)

Table 49. Schottky Diodes
The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency.
CT @ VR
pF
Max
VF @ 10 mA
Volts
Max
IR @ VR
nA
Max
Minority
Lifetime
pS (TYP)
Device
Marking
S l
Style
1.0 @ 20 V
1.5 @ 15 V
1.0 @ 0 V
1.0
0.6
0.6
200 @ 35 V
200 @ 25 V
250 @ 3.0 V
15
15
1
1
1
70
30
7.0
7.0
7.0
7.0
7.0
30
1.0 @ 20 V
1.5 @ 15 V
1.0 @ 0 V
1.0 @ 0 V
1.0 @ 0 V
1.0 @ 0 V
1.0 @ 0 V
1.5 @ 1.5 V
1.0
0.6
0.6
0.6
0.6
0.6
0.6
0.6
200 @ 35 V
200 @ 25 V
250 @ 3.0 V
250 @ 3.0 V
250 @ 3.0 V
250 @ 3.0 V
250 @ 3.0 V
200 @ 25 V
15
15
15
15
15
15
15
15
5H
4T
4M
M5G
M4F
M6H
MJ1
5N
8
8
8
11
19
9
12
11
70
30
4
1.0 @ 20 V
1.5 @ 15 V
1.0 @ 0 V
1.2
0.6
0.6
0.2 @ 35 V
0.2 @ 25 V
0.25 @ 3 V
15
15
15
5H
4T
4M
1
1
1
1.5 @ 15 V
1.0 @ 20 V
0.6
1.0
0.2 @ 25 V
0.2 @ 35 V
4T
5H
2
2
V(BR)R
Volts
D i
Device

MBD701
MBD301
MBD101
70
30
7.0

MMBD701LT1
MMBD301LT1
MMBD101LT1
MMBD352LT1 (23)
MMBD353LT1 (23)
MMBD354LT1 (23)
MMBD355LT1 (23)
MMBD452LT1 (23)
Case 42504 (SOD123)

MMSD701T1
MMSD301T1
MMSD101T1
Case 41902 (SC70/SOT323)

MMBD330T1
MMBD770T1
30
70
(23) Dual Diodes
Case 419B01 SOT363 Duals

V(BR)R
D i
Device
IR
VF
M ki
Marking
Min
Volts
@ IBR
(A)
Max
(A)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
CT(30)
Max
(pF)
trr
Max
(ns)
Case
C
Style
M4
T4
H5
7
30
70
10
10
10
200
200
200
25
25
25
0.6
0.4
0.5
1.0
1.0
1.0
1.0
1.5
1.0
6
6
6
MBD110DWT1
MBD330DWT1
MBD770DWT1
(30) V = 0 V, f = 1.0 MHz
R

5.134
Switching
Diodes
Smallsignal switching diodes are intended for low current
switching and steering applications. HotCarrier, PIN and
generalpurpose diodes allow a wide selection for specific
application requirements.
CASE 2904
TO226AA
(TO92)
2
CASE 18202
TO226AC
(TO92)
1
2
3
STYLE 3
2
STYLE 1
3
1
10
2
Cathode
STYLE 4
Capacitance versus Reverse Voltage
1
Anode
TA = 25C
f = 1 MHz
2
3
MPN3404
CASE 31808
TO236AB
SOT23
1
2
1
0.5
0.3
0.2
MMBV3401LT1
20 V MAX VR
STYLE 8
MPN3700
MMBV3700LT1
STYLE 12
3
SINGLE
12
18
24
30
36
42
48
3
COMMON ANODE
54
(See Table 50)
STYLE 9
STYLE 18
STYLE 1
SINGLE
1
Cathode
2
Anode
3
COMMON CATHODE
CASE 42504
SOD123
STYLE 11
STYLE 19
1
ANODE
3
CATHODE
3
3
SERIES
3
SERIES
2
3
CASE 46301
SOT416/SC90
CASE 318D04
SC59
1
CATHODE
STYLE 4
2
ANODE
STYLE 5
STYLE 2
2
CASE 41902
SC70/SOT323
3
SINGLE
STYLE 5
STYLE 4
STYLE 5
1
STYLE 3
SINGLE
STYLE 4
SINGLE
STYLE 2
2
3
COMMON CATHODE
3
COMMON CATHODE
3
COMMON ANODE
3
COMMON ANODE
5.135
Switching Diodes (continued)

Table 50. PIN Switching Diodes
The following PIN diodes are designed for VHF band switching and generalpurpose low current switching applications.
CT @ VR @ 1.0 MHz
V(BR)R
Volts
Min
D i
Device
Series
Resistance
Ohm
Max
D i
Device
Marking
S l
Style
pF
Max
Volts
IR @ VR
A
Max
1.0
2.0
20
15
0.1 @ 150
0.1 @ 25 V
1.0 @ 10 mA
0.85 @ 10 mA
1
1
1.0
1.0
20
20
0.1 @ 150
0.1 @ 25 V
1.0 @ 10 mA
0.7 @ 10 mA
4R
4D
8
8

MPN3700
MPN3404
200
20

MMBV3700LT1
MMBV3401LT1
200
35
Table 51. GeneralPurpose Signal and Switching Diodes Single

The following is a listing of smallsignal switching diodes in surface mount packages. These diodes are intended for low
current switching and signal steering applications.
V(BR)R
D i
Device
M ki
Marking
Min
Volts
@ IBR
(A)
IR
VF
CT(30)
trr
Max
(A)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style

BAS21LT1
MMBD914LT1
BAS16LT1
MMBD6050LT1
BAL99LT1
JS
5D
A6
5A
JF
250
100
75
70
70
100
100
100
100
100
0.1
5.0
1.0
0.1
2.5
200
75
75
50
70
0.85
1.0
1.0
1.0
1.1
1.0
100
10
50
100
50
5.0
4.0
2.0
2.5
1.5
50
4.0
6.0
4.0
6.0
8
8
8
8
18
40
40
100
100
0.1
0.1
35
35
1.2
1.2
100
100
2.0
2.0
3.0
3.0
4
2
75
40
80
100
1.0
100
100
100
0.02
0.1
0.1
5.0
20
35
75
75
1.25
1.2
1.2
1.0
150
100
100
10
2.0
2.0
2.0
4.0
6.0
3.0
3.0
4.0
2
2
2
2
100
100
100
100
5.0
5.0
0.5
75
75
80
1.0
1.0
1.2
10
10
100
4.0
4.0
2.0
4.0
4.0
4.0
1
1
1
Case 318D04 SC59

M1MA151AT1
M1MA151KT1
MA
MH

BAS16WT1
M1MA141KT1
M1MA142KT1
M1MA174T1
A6
MH
MI
J6
Case 42504 SOD123

MMSD914T1
MMSD4148T1
MMSD71RKT1
5D
5I
6S
(30) V = 0 V, f = 1.0 MHz

R

5.136

Table 52. GeneralPurpose Signal and Switching Diodes Dual
The following is a listing of smallsignal switching diodes in surface mount packages. These diodes are intended for low
current switching and signal steering applications.
V(BR)R
D i
Device
M ki
Marking
Min
Volts
@ IBR
(A)
IR
VF
CT(30)
trr
Max
(A)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style

MMBD7000LT1
MMBD2836LT1
MMBD2838LT1
BAV70LT1
BAV99LT1
BAW56LT1
MMBD6100LT1
BAV74LT1
MMBD2835LT1
MMBD2837LT1
M5C
A2
A6
A4
A7
A1
5BM
JA
A3
A5
100
75
75
70
70
70
70
50
35
35
100
100
100
100
100
100
100
5.0
100
100
1.0
0.1
0.1
5.0
2.5
2.5
0.1
0.1
0.1
0.1
50
50
50
70
70
70
50
50
30
30
0.75
0.85
1.1
1.0
1.0
1.0
1.0
1.0
1.1
1.0
1.0
1.0
100
10
10
50
50
50
100
100
10
10
1.5
4.0
4.0
1.5
1.5
2.0
2.5
2.0
4.0
4.0
4.0
4.0
4.0
6.0
4.0
6.0
4.0
4.0
4.0
4.0
11
12
9
9
11
12
9
9
12
9
40
40
100
100
0.1
0.1
35
35
1.2
1.2
100
100
15
2.0
10
3.0
5
3
100
100
100
100
100
100
100
100
0.1
0.1
2.5
5.0
2.5
2.5
0.1
0.1
75
75
70
70
70
70
35
35
1.2
1.2
1.0
1.0
1.0
1.0
1.2
1.2
100
100
50
50
50
50
100
100
2.0
15
2.0
1.5
1.5
1.5
2.0
15
3.0
10
6.0
6.0
6.0
6.0
3.0
10
5
4
4
5
9
10
5
4
70
1.2
100
3.5
4.0
70
1.2
100
3.5
4.0
CT(30)
trr
Case 318D04 SC59

M1MA151WAT1
M1MA151WKT1
MN
MT

M1MA142WKT1
M1MA142WAT1
BAW56WT1
BAV70WT1
BAV99WT1
BAV99RWT1
M1MA141WKT1
M1MA141WAT1
MU
MO
A1
A4
A7
F7
MT
MN
80
80
70
70
70
70
40
40
Case 46301 SOT416/SC90 (Common Anode)

DAP222
P9
80
100
100
Case 46301 SOT416/SC90 (Common Cathode)

DAN222
N9
80
100
100
Table 53. LowLeakage Medium Speed Switching Diodes Single

V(BR)R
D i
Device
M ki
Marking
Min
Volts
@ IBR
(A)
IR
VF
Max
(nA)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style
100
100
5.0
0.5
75
30
1.0
0.95
10
10
2.0
2.0
3000
3000
8
6
30
100
0.5
30
0.95
10
2.0
3000
30
100
0.5
30
0.95
10
2.0
3000
30
100
0.5
30
0.95
10
2.0
3000

BAS116LT1
MMBD1000LT1
JV
AY
75
30
Case 41902 (SOT323)/(SC70)

MMBD2000T1
DH
Case 318D04 (SC59)

MMBD3000T1
XP
Case 42504 (SOD123)

MMSD1000T1
4K

5.137

Table 54. LowLeakage Medium Speed Switching Diodes Dual
V(BR)R
D i
Device
M ki
Marking
Min
Volts
@ IBR
(A)
IR
VF
CT(30)
trr
Max
(nA)
@ VR
Volts
Min
Volts
Max
Volts
@ IF
(mA)
Max
(pF)
Max
(ns)
Case
Style
5.0
5.0
5.0
0.5
0.5
70
70
70
30
30
1.0
1.0
1.0
0.95
0.95
10
10
10
10
10
2.0
2.0
2.0
2.0
2.0
3000
3000
3000
3000
3000
9
11
12
12
9
100
100
0.5
0.5
30
30
0.95
0.95
10
10
2.0
2.0
3000
3000
4
5
100
100
0.5
0.5
30
30
0.95
0.95
10
10
2.0
2.0
3000
3000
5
3

BAV170LT1
BAV199LT1
BAW156LT1
MMBD1005LT1
MMBD1010LT1
JX
JY
JZ
A3
A5
70
70
70
30
30
100
100
100
100
100
Case 41902 (SOT323)/(SC70) DUAL

MMBD2005T1
MMBD2010T1
DI
DP
30
30
Case 318D04 (SC59) DUAL

MMBD3005T1
MMBD3010T1
XQ
XS
30
30
(30) V = 0 V, f = 1.0 MHz

R

5.138
Multiple
Switching Diodes
Multiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fast
switching requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower cost,
higher reliability and space savings.
14
14
16
16
1
CASE 64606
PIN DIP
PLASTIC
CASE 64808
PIN DIP
PLASTIC
CASE 751A03
SO14
PLASTIC
CASE 751B05
SO16
PLASTIC
Diode Array Diagrams
Dual 10
Diode
Array
1
3
12 13 14
10 11
8 Diode
Array
(Common
Cathode)
14
8 Diode
Array
(Common
Anode)
14
1
2
10 13 14
12
7
2
11 12
11 12
16 15 14 13 12 11 12
Isolated
7 Diode
Array
10 11 12 13 14
6
1
NC Pin 1, 4, 6, 10, 13
3
1
16
Diode
Array
5
3
Isolated
8 Diode
Array
NC Pin 1, 4, 6, 10, 13
2
11
Dual 10
Diode
Array
1
1
14
11 12
Dual 8
Diode
Array
8
2
14
10
7
NC Pin 6, 13
NC Pin 4,6,10,13
11 12
5.139
Multiple Switching Diodes (continued)

Table 55. Diode Arrays
Case 646 TO116
D i
Device
MAD130P
MAD1103P
MAD1107P
MAD1109P
F
Function
i
Pin Connections
Diagram Number
Dual 10 Diode Array

16 Diode Array
Dual 8 Diode Array
7 Isolated Diode Array
1
3
6
8
Dual 10 Diode Array

16 Diode Array
8 Diode Common Cathode Array
8 Diode Common Anode Array
Dual 8 Diode Array
2
3
4
5
6
8
Case 64808
MAD1108P
Case 751A03 SO14

MMAD130
MMAD1103
MMAD1105
MMAD1106
MMAD1107
MMAD1109
Case 751B05 SO16

MMAD1108

5.140
2
CASE 31808
TO236AB
SOT23
CASE 318D04
SC59
PlasticEncapsulated
Surface Mount Devices
1
2
CASE 42504
SOD123
Energy. Its something Motorola is putting a lot of energy into

helping save. Thats why were introducing our GreenLine
portfolio of devices, featuring energyconserving traits
superior to those of our existing line of standard parts for the
same usage. GreenLine devices can actually help reduce the
power demands of your products.
CASE 41902
SC70/SOT323
LowLeakage Switching Diodes: With reverse leakage

specifications guaranteed to 500 pA, they help extend battery
life, making them ideal for small batteryoperated systems in
which standby power is essential. Applications include ESD
protection, reverse voltage protection, and steering logic.
Small Signal HDTMOS: These devices provide our

lowest ever drainsource resistance versus package size.
Lower rDS(on) means less wasted energy through dissipation
loss, making them especially effective for lowcurrent
applications where energy conservation is crucial, such as low
current switchmode power supplies, uninterruptable power
supplies (UPS), power management systems, and bias
switching. This makes them ideal for portable computertype
products or any system where the combination of power
management and energy conservation is key.
Bipolar Output Driver Transistors: Offering ultralow

collector saturation voltage, they deliver more energy to the
intended load with less power wasted through dissipation loss.
They are especially effective in todays lower voltage
batterypowered applications, and prolong battery life in
portable and handheld communications and personal digital
equipment.
Save Energy Save Money

In an increasingly powerhungry world, Motorolas
GreenLine portfolio makes powerful sense. So much sense
that we plan to continue adding devices to the portfolio.
Chances are, there are Motorola GreenLine devices
applicable to one or more of your products ones that can
help save energy, dollars and the environment.
Wide Range of Applications

Currently, our portfolio consists of three families.
Table 56. Bipolar Driver Transistor PNP

These offer ultralow collector saturation voltage.
hFE@ IC
D i T
Device
Type
MMBT1010LT1
MSD1010T1
M ki
Marking
C
Case
V(BR)CEO
VCE(sat)
VBE(sat)
Min
Max
mA
GLP
GLP
SOT23
SC59
15
15
0.1
0.1
1.1
1.1
300
300
600
600
100
100

5.141
GreenLine (continued)
Table 57. Low Leakage Switching Diodes
These offer reverse leakage specifications guaranteed to 500 pA. Versions available in single and dual.
IR
V(BR)R
M ki
Marking
C
Case
Style
Min
Volts
@ IBR
(A)
Max
(nA)
@ VR
Volts
MMBD1000LT1
MMBD1005LT1
MMBD1010LT1
AY
A3
A5
SOT23
SOT23
SOT23
Single
Dual Anode
Dual Cathode
30
30
30
100
100
100
0.5
0.5
0.5
30
30
30
MMBD2000T1
MMBD2005T1
MMBD2010T1
DH
DI
DP
SC70
SC70
SC70
Single
Dual Anode
Dual Cathode
30
30
30
100
100
100
0.5
0.5
0.5
30
30
30
MMBD3000T1
MMBD3005T1
MMBD3010T1
XP
XQ
XS
SC59
SC59
SC59
Single
Dual Anode
Dual Cathode
30
30
30
100
100
100
0.5
0.5
0.5
30
30
30
MMSD1000T1
4K
SOD123
Single
30
100
0.5
30
D i T
Device
Type
Table 58. Small Signal HDTMOS

These provide the lowest drainsource resistance versus package size.
VGS(th)
RDS(on)
D i T
Device
Type
M ki
Marking
Ch
Channel
l
Ohm
mA
VDSS
Switching Time
Volts
Min
Volts
Max
t(on)
ns
t(off)
ns
S l
Style
Case 31808 TO236AB (SOT23) PChannel and NChannel

MMBF0201NLT1
MMBF0202PLT1
MGSF1N02LT1
MGSF1N03LT1
MGSF1P02LT1
MGSF1P02ELT1
N1
P3
N
P
N
N
P
P
1.0
1.4
0.08
0.09
0.20
0.16
300
200
2000
2000
1500
1500
20
20
20
30
20
20
1.0
1.0
1.0
1.0
1.0
0.7
2.4
2.4
2.4
2.4
2.4
1.0
2.5
2.5
2.5
2.5
2.5
2.5
15
16
16
16
16
16
21
21
21
21
21
21
P
N
1.5
0.7
200
300
20
20
1.0
1.0
2.4
2.4
2.5
2.5
16
15
7
7

MMBF2202PT1
MMBF2201NT1
P3
N1

5.142
Small Signal
Multiintegrated Devices
CASE 31808
SOT23
CASE 318A05
SOT143
VCC (3)
Vout
R1
(3)
Vin 1.0 k
Q1
6.8 V
(1)
R2
33 k
GND
6
Vref (4)
R3
Q2
Iout (2)
1
R4
(2)
5
3
CASE 419B01
SOT363
GND (1)
INTERNAL CIRCUIT DIAGRAMS

Table 59. Low Voltage Bias Stabilizer
A silicon SMALLBLOCK integrated circuit which maintains stable bias current in various discrete bipolar junction and field
effect transistors.
VCC (Volts)
D i Type
Device
T
M ki
Marking
Min
Max
ICC
A
Vref
Volts
Vref
Volts
Case 318A05 SOT143

MDC5000T1
E5
1.8
10
200
2.1
50
E6
1.8
10
200
2.1
50
Case 419B01 SOT363

MDC5001T1
Table 60. Integrated Relay/Solenoid Driver

Monolithic circuit block to switch 3.0 V to 5.0 V relays. It is intended to replace an array of three to six discrete components.
VCC (Volts)
D i Type
Device
T
Vin (Volts)
Min
Max
Min
Max
Vsat
(Volts)
Iin
(mA)
IC(on)
(mA)
2.0
5.5
2.0
5.5
0.4
2.5
250
Case 31808 SOT23

MDC3105LT1

5.143

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Small Signal Transistors,

FETs and Diodes

Motorola Master Selection Guide

Small Signal Transistors, FETs and Diodes

Motorolas Small Signal TO226 plastic transistors

Table 1. PlasticEncapsulated GeneralPurpose Transistors

Case 2904 TO226AA (TO92)

Devices listed in bold, italic are Motorola preferred devices.

Motorola Master Selection Guide

PlasticEncapsulated Transistors (continued)

Case 2905 TO226AE (1WATT TO92)

Table 2. PlasticEncapsulated LowNoise and Good hFE Linearity

Case 2904 TO226AA (TO92)

Devices listed in bold, italic are Motorola preferred devices.

Small Signal Transistors, FETs and Diodes

PlasticEncapsulated Transistors (continued)

Case 2905 TO226AE (1WATT TO92)

Case 2904 TO226AA (TO92)

Table 4. PlasticEncapsulated HighCurrent Transistors

Case 2905 TO226AE (1WATT TO92)

Case 2904 TO226AA (TO92)

Devices listed in bold, italic are Motorola preferred devices.

Motorola Master Selection Guide

PlasticEncapsulated Transistors (continued)

Case 2905 TO226AE (1WATT TO92) NPN

Case 2905 TO226AE (1WATT TO92) PNP

Case 2904 TO226AA (TO92) NPN

Case 2904 TO226AA (TO92) PNP

Case 2904 TO226AA (TO92)

Devices listed in bold, italic are Motorola preferred devices.

Small Signal Transistors, FETs and Diodes

PlasticEncapsulated Transistors (continued)

Case 2904 TO226AA (TO92) NPN

Case 2904 TO266AA (TO92) PNP

Table 7. PlasticEncapsulated HighSpeed Saturated Switching Transistors

Case 2904 TO226AA (TO92) NPN

Case 2904 TO226AA (TO92) PNP

Devices listed in bold, italic are Motorola preferred devices.

Motorola Master Selection Guide

PlasticEncapsulated Transistors (continued)

Case 2904 TO226AA (TO92) NPN

Case 2904 TO266AA (TO92) PNP

Table 9. PlasticEncapsulated Telecom Transistors

Case 2904 TO226AA (TO92) NPN

Case 2904 TO226AA (TO92) PNP

Devices listed in bold, italic are Motorola preferred devices.

Small Signal Transistors, FETs and Diodes

Power Dissipation specified at 25C. Single

Small Signal Transistors, FETs and Diodes

Continuous (DC) Collector Current

Rated Minimum CollectorEmitter Voltage

Output Capacitance, commonbase. Shown without distinction:

Motorola Master Selection Guide

PlasticEncapsulated Multiple Transistors (continued)

Case 64606 TO116

Table 11. PlasticEncapsulated Multiple Transistors Quad Surface Mount

Case 751B05 SO16

Devices listed in bold, italic are Motorola preferred devices.

Small Signal Transistors, FETs and Diodes

This section of the selector guide lists the smallsignal plastic

Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors

Case 31808 TO236AB (SOT23) NPN