Electronica Mosfet

6.
002
CIRCUITS AND ELECTRONICS
MOSFET Amplifier Large Signal Analysis
Cite as: Anant Agarwal and Jeffrey Lang, course materials for 6.002 Circuits and Electronics, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.002 Fall 2000
Lecture 9
Review
Amp constructed using dependent source control a a port
DS
b output b port
Dependent source in a circuit

v
a +
a
i = f (v )
b
Superposition with dependent sources: one way leave all dependent sources in; solve for one independent source at a time [section 3.5.1 of the text] Next, quick review of amp Reading: Chapter 7.37.7
6.002 Fall 2000
Lecture 9
Amp review
VS
RL
vO
VCCS
vI
K 2 iD = (vI 1) 2 for vI 1V = 0 otherwise
vO = VS iD RL K (vI 1)2 2
6.002 Fall 2000
Lecture 9
Key device Needed:

v
A B
i = f (v )
voltage controlled current source
Lets look at our old friend, the MOSFET
6.002 Fall 2000
Lecture 9
Key device Needed:

Our old friend, the MOSFET First, we sort of lied. The on-state behavior of the MOSFET is quite a bit more complex than either the ideal switch or the resistor model would have you believe.
D G vGS < VT
D
G S vGS VT
6.002 Fall 2000
Lecture 9
Graphically
iDS v+ DS
Demo
+ vGS
egio n
iDS vGS VT
iDS vGS VT
iDS
vDS = vGS VT vGS 1

Saturation region
Trio de r
vGS 2
...
vGS3
vDS
vGS < VT
vDS
vGS < VT
vDS
S MODEL
SR MODEL
vGS < VT Cutoff

region
6.002 Fall 2000
Lecture 9
Graphically
iDS v+ DS
+ vGS
egio n
iDS vGS VT
iDS vGS VT
iDS
vDS = vGS VT vGS 1

Saturation region
Trio de r
vGS 2
...
vGS3
vDS
vGS < VT
vDS
vGS < VT
vDS
S MODEL
SR MODEL
vGS < VT
vDS vGS VT
Notice that MOSFET behaves like a current source
when
6.002 Fall 2000
Lecture 9
MOSFET SCS Model

When
vDS vGS VT
the MOSFET is in its saturation region, and the switch current source (SCS) model of the MOSFET is more accurate than the S or SR model
D G vGS < VT D G S vGS G VT S D iDS = f (vGS ) K 2 = (vGS VT ) 2 S

when
vDS vGS VT
6.002 Fall 2000
Lecture 9
Reconciling the models

egio n
iDS vGS VT
iDS vGS VT
iDS
vDS = vGS VT vGS 1

Saturation region
Trio de r
vGS 2
...
vGS3
vDS
vGS < VT
vDS
vGS < VT
vDS
vGS < VT
SCS MODEL for analog designs
S MODEL for fun!
SR MODEL for digital designs
When to use each model in 6.002?

Note: alternatively (in more advanced courses)
vDS vGS VT vDS < vGS VT
use SCS model use SR model
or, use SU Model (Section 7.8 of A&L)

6.002 Fall 2000
Lecture 9
Back to Amplifier
VS
vI
AMP
vO
VS
RL vI
D S
vO K 2 iDS = (vI VT ) 2 in saturation region
To ensure the MOSFET operates as a VCCS, we must operate it in its saturation region only. To do so, we promise to adhere to the saturation discipline
6.002 Fall 2000
Lecture 9
MOSFET Amplifier
VS
RL vI
D S
vO K 2 iDS = (vI VT ) 2 in saturation region
To ensure the MOSFET operates as a VCCS, we must operate it in its saturation region only. We promise to adhere to the saturation discipline. In other words, we will operate the amp circuit such that vGS VT and vDS vGS VT vO vI vT
6.002 Fall 2000 Lecture 9
at all times.
Lets analyze the circuit

First, replace the MOSFET with its SCS model.
VS
RL
vO G D iDS
+ vI
K 2 = (vI VT ) 2
vGS = vI
for vO vI VT
6.002 Fall 2000
Lecture 9
Lets analyze the circuit

VS
RL
vO G D iDS
+ vI
K 2 = (vI VT ) 2
vGS = vI
for vO vI VT
(vO = vDS in our example)
Analytical method: vO vs vI vO = VS iDS RL B K 2 or vO = VS (vI VT ) RL for vI VT 2 vO vI VT
vO = VS
vI < VT (MOSFET turns off)

for
6.002 Fall 2000
Lecture 9
Graphical method vO vs vI K 2 From A : iDS = (vI VT ) , 2 vO vI VT 2

for
2iDS vO K iDS K 2 vO 2
B : iDS
VS v0 RL RL
6.002 Fall 2000
Lecture 9
Graphical method vO vs vI K 2 K 2 for iDS vO A : iDS = (vI VT ) , 2 2 VS vO B : iDS = RL RL
iDS VS RL
B
iDS
Lo ad
K 2 vO 2
A
vI = vGS
li n e
VS
Constraints
6.002 Fall 2000
vO
and
must be met
Lecture 9
Graphical method vO vs vI
iDS VS RL
B
iDS
K 2 vO 2
A
vI
I DS
VI vO
VO
VS
Constraints A and B must be met. Then, given VI, we can find VO, IDS .
6.002 Fall 2000
Lecture 9
Large Signal Analysis

of Amplifier (under saturation discipline)
1 2
vO versus vI
Valid input operating range and valid output operating range
6.002 Fall 2000
Lecture 9

1
vO versus vI vO VS VS K (vI VT )2 RL 2
VT
vO = vI VT gets into triode region vI
6.002 Fall 2000
Lecture 9

What are valid operating ranges under the saturation discipline? vI VT Our K 2 iDS vO Constraints vO v I VT 2 2
iDS VS RL
iDS
K 2 vO 2
K 2 iDS = (vI VT ) 2 vI VS vO iDS = RL RL vO
VS
?
6.002 Fall 2000
vI = VT vO = VS and iDS = 0
Lecture 9

iDS iDS K 2 vO 2
What are valid operating ranges under the saturation discipline?
iDS =
K (vI VT )2 2 vI VS vO iDS = RL RL vO
1 + 1 + 2 KRLVS vI = VT + KRL
vO = 1 + 1 + 2 KRLVS KRL VS vO = RL RL
Lecture 9
vI = VT vO = VS and iDS = 0
iDS
6.002 Fall 2000
Large Signal Analysis Summary

1
vO versus vI K 2 vO = VS (vI VT ) RL 2
Valid operating ranges under the saturation discipline? Valid input range:
vI : VT
to
VT +
1 + 1 + 2 KRLVS KRL
corresponding output range:
vO : VS to
1 + 1 + 2 KRLVS KRL
6.002 Fall 2000
Lecture 9

Electronica Mosfet

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6.

CIRCUITS AND ELECTRONICS

MOSFET Amplifier Large Signal Analysis

6.002 Fall 2000

Dependent source in a circuit

6.002 Fall 2000

K 2 iD = (vI 1) 2 for vI 1V = 0 otherwise

6.002 Fall 2000

Key device Needed:

voltage controlled current source

Lets look at our old friend, the MOSFET

6.002 Fall 2000

Key device Needed:

6.002 Fall 2000

vDS = vGS VT vGS 1

vGS < VT Cutoff

6.002 Fall 2000

vDS = vGS VT vGS 1

6.002 Fall 2000

MOSFET SCS Model

D G vGS < VT D G S vGS G VT S D iDS = f (vGS ) K 2 = (vGS VT ) 2 S

6.002 Fall 2000

Reconciling the models

vDS = vGS VT vGS 1

S MODEL for fun!

SR MODEL for digital designs

When to use each model in 6.002?

vDS vGS VT vDS < vGS VT

use SCS model use SR model

or, use SU Model (Section 7.8 of A&L)

6.002 Fall 2000

vO K 2 iDS = (vI VT ) 2 in saturation region

6.002 Fall 2000

vO K 2 iDS = (vI VT ) 2 in saturation region

Lets analyze the circuit

6.002 Fall 2000

Lets analyze the circuit

Analytical method: vO vs vI vO = VS iDS RL B K 2 or vO = VS (vI VT ) RL for vI VT 2 vO vI VT

vI < VT (MOSFET turns off)

6.002 Fall 2000

Graphical method vO vs vI K 2 From A : iDS = (vI VT ) , 2 vO vI VT 2

6.002 Fall 2000

Graphical method vO vs vI K 2 K 2 for iDS vO A : iDS = (vI VT ) , 2 2 VS vO B : iDS = RL RL

6.002 Fall 2000

Large Signal Analysis

6.002 Fall 2000

Large Signal Analysis

vO = vI VT gets into triode region vI

6.002 Fall 2000

Large Signal Analysis

K 2 iDS = (vI VT ) 2 vI VS vO iDS = RL RL vO

Large Signal Analysis

What are valid operating ranges under the saturation discipline?

6.002 Fall 2000

Large Signal Analysis Summary

corresponding output range:

6.002 Fall 2000

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