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APM4546K

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

N-Channel 30V/7A, RDS(ON) =20m (typ.) @ VGS = 10V RDS(ON) =27m (typ.) @ VGS = 4.5V

Pin Description

P-Channel -30V/-5A, RDS(ON) =38m (typ.) @ VGS =-10V RDS(ON) =46m (typ.) @ VGS =-4.5V

Top View of SOP 8


(8) D1 (7) D1 (3) S2

Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
(2) G1 (4) G2

Applications

Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
S1 (1) D2 (5) D2 (6)

N-Channel MOSFET P-Channel MOSFET

Ordering and Marking Information


APM4546
Lead Free Code Handling Code Temp. Range Package Code APM4546 K : APM4546 XXXXX Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw

APM4546K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA*
Note: *Surface Mounted on 1in pad area, t 10sec.
2

(TA = 25C unless otherwise noted)


N Channel 30 16 VGS=10V (N) VGS=-10V (P) 7 25 2 150 -55 to 150 TA=25C TA=100C 2 0.8 62.5 C/W P Channel -30 16 -5 -20 -2 Unit V A A C W

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation

Thermal Resistance-Junction to Ambient

Electrical Characteristics

(TA = 25C unless otherwise noted)

Symbol

Parameter

Test Condition

APM4546K Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 38 27 46 0.8 -0.8 1.5 -1.5 30 -30 1 30 -1 -30 2 -2 100 100 26 50 36 60 Typ. Max.

Unit

Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A VGS=0V, IDS=-250A VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85C VDS=-24V, VGS=0V TJ=85C VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=VGS, IDS=250A VDS=VGS, IDS=-250A VGS=16V, VDS=0V VGS=16V, VDS=0V VGS=10V, IDS=7A RDS(ON) a Drain-Source On-State Resistance VGS=-10V, IDS=-5A VGS=4.5V, IDS=5A VGS=-4.5V, IDS=-4A V

nA

Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005

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APM4546K
Electrical Characteristics (Cont.)
Symbol Parameter

(T A = 25C unless otherwise noted)


APM4546K Min. Typ. Max.

Test Condition

Unit

Diode Characteristics VSD


a

Diode Forward Voltage

ISD=2A, VGS=0V ISD=-2A, VGS=0V

N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

0.8 -0.8 2 10 790 900 130 140 80 75 7 7 9 12 27 42 6 19 10

1.3 -1.3

Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz N-Channel VGS=0V, VDS=15V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-15V, Frequency=1.0MHz N-Channel VDD=15V, RL=15, IDS=1A, VGEN =10V, RG=6 P-Channel VDD=-15V, RL=15, IDS=-1A, VGEN =-10V, RG=6

Ciss

Input Capacitance

Coss

Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time

pF

Crss

td(ON) Tr td(OFF) Tf

14 14 17 17 36 56 12 26 nC ns

Q rr

N-Channel I =7A, dISD/dt =100A/s Reverse Recovery Charge SD P-Channel ISD=-5A, dISD/dt =100A/s
b

Gate Charge Characteristics Qg Q gs Q gd


Notes:

Total Gate Charge Gate-Source Charge Gate-Drain Charge

N-Channel VDS=15V, VGS=10V, IDS=7A P-Channel VDS=-15V, VGS=-10V, IDS=-5A

N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

18.1 18.2 1.7 2.3 2.2 1.6

24 24 nC

a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 3 www.anpec.com.tw

APM4546K
Typical Characteristics
N-Channel Power Dissipation
2.5 8

Drain Current

2.0

1.5

ID - Drain Current (A)

Ptot - Power (W)

1.0

2 0.5
o

0.0

TA=25 C 0 20 40 60 80 100 120 140 160

TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area Normalized Transient Thermal Resistance


100

Thermal Transient Impedance


2 1
Duty = 0.5

ID - Drain Current (A)

Rd s(o n)

10

Lim it

1ms 10ms

0.2

0.1

0.1 0.05 0.02 0.01

1
100ms 1s DC

0.01

0.1

Single Pulse

0.01 0.01

TA=25 C 0.1 1 10 100

1E-3 1E-4

Mounted on 1in pad o RJA : 62.5 C/W

1E-3

0.01

0.1

10 30

VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005

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APM4546K
Typical Characteristics (Cont.)
N-Channel Output Characteristics
25 VGS= 4, 5, 6, 7, 8, 9, 10V 3V 20
32 36

Drain-Source On Resistance

RDS(ON) - On - Resistance (m)

ID - Drain Current (A)

28 VGS=4.5V 24 20 16 12 8 VGS=10V

15

10

2.5V

5 2V 0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

10

15

20

25

VDS - Drain-Source Voltage (V)

ID - Drain Current (A)

Transfer Characteristics
25
1.8 1.6

Gate Threshold Voltage


IDS=250A

20

Normalized Threshold Voltage

1.4 1.2 1.0 0.8 0.6 0.4

ID - Drain Current (A)

15 Tj=125 C 10 Tj=25 C 5
o o

Tj=-55 C

0.2 -50 -25

25

50

75 100 125 150

VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005

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APM4546K
Typical Characteristics (Cont.)
N-Channel Drain-Source On Resistance
2.0 1.8 VGS = 10V IDS = 7A
10 Tj=150 C
o

Source-Drain Diode Forward


30

Normalized On Resistance

1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 RON@Tj=25 C: 20m 0 25 50 75 100 125 150
o

IS - Source Current (A)

Tj=25 C 1

0.1 0.0

0.3

0.6

0.9

1.2

1.5

Tj - Junction Temperature (C)

VSD - Source - Drain Voltage (V)

Capacitance
1400 1200 Frequency=1MHz
10 VDS=15V IDS =7A

Gate Charge

VGS - Gate - source Voltage (V)


25

C - Capacitance (pF)

1000 800 600 400 200 0 Ciss

Crss

Coss

10

15

20

12

16

20

VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005

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APM4546K
Typical Characteristics (Cont.)
P-Channel Power Dissipation
2.5
6

Drain Current

2.0

-ID - Drain Current (A)


o

Ptot - Power (W)

1.5

1.0

0.5

0.0

TA=25 C 0 20 40 60 80 100 120 140 160

TA=25 C,VG=-10V 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area Normalized Transient Thermal Resistance


100

Thermal Transient Impedance


2 1
Duty = 0.5 0.2

-ID - Drain Current (A)

Rd s(o n) Lim it

10

1ms 10ms

0.1
0.05 0.02 0.01

0.1

1
100ms 1s DC

0.01

0.1

Single Pulse

T =25 C 0.01 A 0.01 0.1

10

100

1E-3 1E-4

Mounted on 1in pad o RJA : 62.5 C/W

1E-3

0.01

0.1

10 30

-VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005

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APM4546K
Typical Characteristics (Cont.)
P-Channel Output Characteristics
20 18 16 VGS= -4,-5,-6,-7,-8,-9,-10V
80 70 60 VGS= -4.5V 50 40 30 20 10 VGS= -10V

Drain-Source On Resistance

14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 -2V 2.0 2.5 3.0 -2.5V

RDS(ON) - On - Resistance (m)

-3V

-ID - Drain Current (A)

12

16

20

-VDS - Drain - Source Voltage (V)

-ID - Drain Current (A)

Transfer Characteristics
20 18 16
1.8

Gate Threshold Voltage


IDS= -250 1.6

Normalized Threshold Voltage

1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25

-ID - Drain Current (A)

14 12 10 8 6 4 2 0 0 1 2 3 4 5 Tj=25 C
o

Tj=125 C

Tj=-55 C

25

50

75 100 125 150

-VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005

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APM4546K
Typical Characteristics (Cont.)
P-Channel Drain-Source On Resistance
1.8 VGS = -10V 1.6 IDS = -5A

Source-Drain Diode Forward


20 10 Tj=150 C
o

Normalized On Resistance

1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 38m 0 25 50 75 100 125 150
o

-IS - Source Current (A)

1.4

Tj=25 C

0.1 -0.5

0.0

0.5

1.0

1.5

2.0

Tj - Junction Temperature (C)

-VSD - Source - Drain Voltage (V)

Capacitance
1400 Frequency=1MHz 1200 1000 Ciss 800 600 400 200 Crss 0
0 10 VDS= -15V ID= -5A 8

Gate Charge

-VGS - Gate - source Voltage (V)

C - Capacitance (pF)

Coss

10

15

20

25

12

16

20

-VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005

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APM4546K
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)

e1 D

e2

A1

1 L

0.004max.

Dim A A1 D E H L e1 e2 1

Millimeters Min. 1.35 0.10 4.80 3.80 5.80 0.40 0.33 1.27BSC 8 Max. 1.75 0.25 5.00 4.00 6.20 1.27 0.51 Min. 0.053 0.004 0.189 0.150 0.228 0.016 0.013

0.015X45

Inches Max. 0.069 0.010 0.197 0.157 0.244 0.050 0.020 0.50BSC 8

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APM4546K
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition
TP

(IR/Convection or VPR Reflow)

tp Critical Zone T L to T P

Ramp-up

Temperature

TL Tsmax

tL

Tsmin Ramp-down ts Preheat

25

t 25 C to Peak

Time

Classification Reflow Profiles


Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds

6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005

APM4546K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process Package Peak Reflow Temperature s 3 3 Package Thickness Volume mm Volume mm <350 350 <2.5 mm 240 +0/-5C 225 +0/-5C 2.5 mm 225 +0/-5C 225 +0/-5C
Table 2. Pb-free Process Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level.

Reliability Test Program


Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles

Carrier Tape & Reel Dimensions


t E Po P P1 D

F W

Bo

Ao

D1

Ko

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APM4546K
Carrier Tape & Reel Dimensions(Cont.)
T2

J C A B

T1

Application

A 3301 F 5.5 0.1

B C J 62 1.5 12.75 + 0.1 2 + 0.5 5

T1 12.4 +0.2

T2 2 0.2 Ao 6.4 0.1

W 12 + 0.3 - 0.1 Bo 5.2 0.1

P 8 0.1

E 1.75 0.1

SOP-8

D D1 Po P1 1.550.1 1.55+ 0.25 4.0 0.1 2.0 0.1

Ko t 2.1 0.1 0.30.013

Cover Tape Dimensions


Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3

(mm)

Devices Per Reel 2500

Customer Service
Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369

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