UNISONIC TECHNOLOGIES CO.

, LTD UK2996
600V SILICON N-CHANNEL POWER MOSFET
DESCRIPTION
The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM motor drive controls.

MOSFET

TO-220

TO-220F

FEATURES
* Fast Switching Times * Improved Inductive Ruggedness * High Forward Transfer Admittance * Low on Resistance * Low Leakage Current * Lower Input Capacitance

TO-220F1

SYMBOL
1

TO-220F2

ORDERING INFORMATION
Ordering Number Lead Free Halogen Free UK2996L-TA3-T UK2996G-TA3-T UK2996L-TF1-T UK2996G-TF1-T UK2996L-TF2-T UK2996G-TF2-T UK2996L-TF3-T UK2996G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube

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UK2996
ABSOLUTE MAXIMUM RATING
PARAMETER Drain to Source Voltage Continuous Drain Current Pulsed Drain Current Drain to Gate Voltage (RGS = 20 k) Gate to Source Voltage Avalanche Current Single Pulsed Avalanche energy (Note 2) Repetitive Avalanche Energy (Note 3) Power Dissipation (TC = 25C) Junction Temperature TO-220 TO-220F/TO-220F1 TO-220F2 SYMBOL VDSS ID IDM VDGR VGSS IAR EAS EAR PD TJ RATINGS 600 10 30 600 30 10 252 4.5 45 36 38 +150

MOSFET

UNIT V A A V V A mJ mJ W C

C Storage Temperature TSTG -55 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 4.41 mH, IAR = 10 A, VDD = 90 V, RG = 25 , starting TJ = 25C. 3. Pulse width and frequency is limited by TJ.

THERMAL DATA
CHARACTERISTICS Channel to Ambient TO-220 Channel to Case TO-220F/TO-220F1 TO-220F2 SYMBOL JA JC RATINGS 62.5 2.78 3.47 3.29 UNIT C / W C / W

ELECTRICAL CHARACTERISTICS (TA = 25C)

PARAMETER GateSource Breakdown Voltage DrainSource Breakdown Voltage Gate Threshold Voltage Gate Source Leakage Current Drain Source Leakage Current Static DrainSource ON Resistance Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Total Gate Charge GateSource Charge GateDrain Charge Turn-on Delay Time Turn-on Rise Time Turnoff Delay Time Switching Time Turn-off Fall Time tF 27 SYMBOL BVGSS BVDSS VGS(TH) IGSS IDSS RDS (ON) gFS CISS CRSS COSS QG QGS QGD tON tR tOFF TEST CONDITIONS VDS = 0V, IG = 10A VGS = 0V, ID = 10mA VDS = 10V, ID = 1mA VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V VGS = 10V, ID = 5A VDS = 10V, ID = 5A VDS = 20V, VGS = 0V, f = 1MHz MIN TYP MAX 30 600 2.0 4.0 10 100 0.74 1. 0 3.4 6.8 1500 13 140 38 21 17 55 15 145 UNIT V V V A A S pF

ID = 10A, VDD 400V, VGS = 10V

nC

ns

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UK2996
SOURCEDRAIN DIODE CHARACTERISTICS (TA = 25C)
PARAMETER SYMBOL TEST CONDITIONS Diode Forward Voltage VSD VGS = 0V, IS = 10A Continuous Source Current (body diode) IS Integral Reverse p-n Junction Diode in the MOSFET Drain MIN

MOSFET

TYP MAX UNIT -1.7 V 10 A

Pulse Source Current (body diode)

ISM Gate Source

30

Reverse Recovery Time Reverse Recovery Charge

tRR QRR

VGS = 0V, IS = 10A, dIF/dt = 100 A/s

1600 17

ns C

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UK2996
TEST CIRCUIT AND WAVE FORM
VDS LL ID BVDSS IAR ID (t) VDD tP

MOSFET

RG +15V -15V tP DUT

VDD

VDS (t) Time

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UK2996
TYPICAL CHARACTERISTICS

MOSFET

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UK2996

MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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