DATA SHEET DATA SHEET

SILICON TRANSISTOR

2SC3356
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
0.4 0.05
+0.1

PACKAGE DIMENSIONS (Units: mm)

2.80.2 1.5 0.65 0.15
+0.1

FEATURES
Low Noise and High Gain
0.95 0.95 2.90.2

NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (TA = 25
C)

Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg
65

20 12 3.0 100 200 150 to +150

V V V mA mW

C
C

0.3

Marking

1.1 to 1.4

PIN CONNECTIONS 1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25
C)

CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE* fT Cre** 50 120 7 0.55 11.5 1.1 2.0 1.0 MIN. TYP. MAX. 1.0 1.0 300 GHz pF dB dB UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz

A
A

S21e
2
NF

Pulse Measurement PW  350
s, Duty Cycle  2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification
Class Marking hFE R23/Q * R23 50 to 100 R24/R * R24 80 to 160 R25/S * R25 125 to 250 * Old Specification / New Specification

Document No. P10356EJ5V1DS00 (5th edition) Date Published March 1997 N Printed in Japan

0 to 0.1

0.16 0.06

+0.1

0.4 0.05

+0.1

1985

2SC3356
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE

PT-Total Power Dissipation-mW

200

Cre-Feed-back Capacitance-pF

Free Air

f = 1.0 MHz

100

0.5

50

100

150

0.3 0

0.5

10

20

30

TA-Ambient Temperature-C DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 15

VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT

hFE-DC Current Gain

100

|S21e|2-Insertion Gain-dB

10

50

5 VCE = 10 V f = 1.0 GHz 1 5 10 50 70 IC-Collector Current-mA

20

10 0.5

10

50

0 0.5

IC-Collector Current-mA

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10

INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax

fT-Gain Bandwidth Product-MHz

3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 30

Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB

5.0

20 |S21e|2

10

VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz

IC-Collector Current-mA

2SC3356
NOISE FIGURE vs. COLLECTOR CURRENT 7 6
NF-Noise Figure-dB

VCE = 10 V f = 1.0 GHz

|S21e|2-Insertion Gain-dB

18

15
NF-Noise Figure-dB

5 4 3 2 1 0 0.5 1 5 10 50 70

NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 |S21e|2 3 2 NF 1

12 6

10

IC-Collector Current-mA

VCE-Collector to Emitter Voltage-V

S-PARAMETER

VCE = 10 V, IC = 5 mA, ZO = 50

f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000

S11

0.651 0.467 0.391 0.360 0.360 0.361 0.381 0.398 0.423 0.445

 S11 69.3 113.3 139.3 159.2 176.9

172.7 160.3 152.2 143.3 137.6

S21

10.616 6.856 4.852 3.802 3.098 2.646 2.298 2.071 1.836 1.689

 S21
129.3 104.4 90.9 81.2 72.9 67.3 59.3 55.2 49.0 46.2

S12

0.051 0.071 0.086 0.101 0.118 0.137 0.157 0.180 0.203 0.220

 S12
59.2 54.4 56.0 59.1 61.0 63.5 63.3 64.1 63.7 64.7

S22

0.735 0.550 0.468 0.426 0.397 0.373 0.360 0.337 0.320 0.302

 S22 28.1 34.1 33.9 33.6 35.7 38.3 43.0 45.9 52.3 52.2

VCE = 10 V, IC = 5 mA, ZO = 50

f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000

S11

0.339 0.258 0.243 0.242 0.260 0.269 0.294 0.314 0.343 0.367

 S11 107.0 147.3 167.7

177.0 164.5 157.6 148.7 143.1 136.5 131.4

S21

16.516 8.928 6.022 4.633 3.744 3.193 2.750 2.479 2.185 2.016

 S21
108.7 92.1 83.0 76.2 69.9 65.7 58.8 55.5 50.1 47.8

S12

0.035 0.060 0.085 0.109 0.136 0.160 0.187 0.212 0.238 0.254

 S12
66.1 71.0 71.9 72.2 70.4 69.9 66.7 65.2 62.4 61.6

S22

0.459 0.343 0.305 0.284 0.266 0.246 0.233 0.208 0.190 0.173

 S22 36.6 32.9 29.9 29.4 31.7 35.0 40.4 43.6 50.5 48.3

2SC3356
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 10 V 200 MHz Step
0.
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOADLECTION COEF WA F FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0 G 4 GRE AN 0.4 0.4 ES LEN160 0 4 E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 1 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 0 0 E ITIV 40 ON 0 ER 4 MP 0. 1 EA CO C

5 0.

07 43 0. 0 13

1.6

12

0.7

8 0.0 2 0.4

0.9

1.0

0.8

1.2

9 0.0 1 0.4

0.10 0.40 110

0.11 0.39 100

0.12 0.38

0.13 0.37

90

0.14 0.36 80

0.15 0.35

70
1.4

0.1 6 0.3 4

0
0.6

6 00
1.8

0.1 0.3 7 3
0.
2.0

0.2

50

0. 18 32

19 0. 31 0.

( Z+JXTANCE CO ) MPO

T EN

0.4

0 0.2 0 0.3

40

WAVELE NG

0.2

0.3

0.4

0.5

0.6

0.7 0.8

0.9 1.0

1.2

1.4

1.6

1.8 2.0

3.0

4.0

5.0

10

20

0.1

0.4
0.6

S22e
0. 8

E NC TA X AC J O RE Z

0.3

0.

E IV AT

IC = 5 mA
0.
1.6

0.

2.0

0.6

1.8

0.7

0.8

0.9

1.2

S21e-FREQUENCY CONDITION VCE = 10 V IC = 20 mA 90 120 0.2 GHz 60

150

S21e

30

150

180

2.0 GHz 5

10

15

20

0 180

150

30

150

120 90

60

4 0.3 6 0.1

0.35 0.15 70

1.0

1.4

120

120 90

3.

0.2 GHz

5.0

4.0

32

0.

18

3 0.3 7 0.1

0.36 0.14 80

1.0

IC = 20 mA
0.8
0.6

1.

0.2

IC = 5 mA 0.2 GHz

20

50

REACTANCE COMPONENT R 0.2 ZO

10

0.37 0.13

0.4

0.4

S11e

0 1.

0.2 GHz IC = 20 mA

0.8

0.6

0.2

0.2

90

0.38 0.39 0.12 0.11 100

0.40 0.10

11

0.4 1 0.0 0.4 9 0 2 1 .08 20

NE G

0. 4 0. 3 07 30

0.

0.6

3.
0.8

1 0.2 9 0.2 30

0.3

4.0

0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20

1.0

2.0 GHz

6.0

0.2

10

0.1

20

50

0.25 0.25

0.26 0.24

10

0.27 0.23

0.2 8 0.2 2 20

0 .29 0.2 1 0.3 3 0.2 0 0 0

4 0

0. 0. 31 19

S12e-FREQUENCY CONDITION 90 VCE = 10 V IC = 20 mA

2.0 GHz 60

S12e 30

0.2 GHz 0.05 0.1 0.15 0 0.2 0.25

30

60

2SC3356
[MEMO]

2SC3356
[MEMO]

2SC3356
[MEMO]

2SC3356

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M4 96. 5