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MOS Enhancement Transistor MOStransistorscanbemodeledasavoltage controlledswitch.Idsisanimportantparameter thatdeterminesthebehavior,e.g.,thespeedof theswitch. Whataretheparametersthateffectthe magnitudeofIds?(AssumeVgsandVdsare fixed,e.g.5V). Thedistancebetweensourceanddrain(channel length). Thechannelwidth. Thethresholdvoltage. Thethicknessofthegateoxidelayer. Thedielectricconstantofthegateinsulator. Thecarrier(electronorhole)mobility.
Summaryofnormalconductioncharacteristics: Cutoff :accumulation,I ds isessentiallyzero. Nonsaturated :weakinversion,I ds dependentonboth V gs andV ds . Saturated :stronginversion,I ds isideallyindependent ofV ds .
Threshold Voltage Vtisalsoanimportantparameter.Whateffects itsvalue? Mostarerelatedtothematerialproperties.In otherwords,Vtislargelydeterminedatthe timeoffabrication,ratherthanbycircuit conditions,likeIds. Forexample,materialparametersthateffectVt include: Thegateconductormaterial(polyvs.metal). Thegateinsulationmaterial(SiO 2 ). Thethicknessofthegatematerial. Thechanneldopingconcentration.
Asyoucansee,itisoftennecessarytoadjustVt . Twomethodsarecommon:
Idealfirstorderequationforlinearregion:
Idealfirstorderequationforsaturationregion:
withthefollowingdefinitions:
Computebeta:
Howdoesthisbetacomparewithp devices:
Beta Ratios RegionCisthemostimportantregion.Asmall changeintheinputvoltage,Vin,resultsina LARGEchangeintheoutputvoltage,Vout. Thisbehaviordescribesanamplifier,theinput isamplifiedattheoutput.Theamplificationis termedtransistorgain,whichisgivenbybeta. Boththenandpchanneltransistorshavea beta.Varyingtheirratiowillchangethe characteristicsoftheoutputcurve.
doesNOTaffectswitchingperformance.
SincebetaisdependentWandL,wecanadjust theratiobychangingthesizesofthetransistor
channelwidths,bymakingpchannel transistorswiderthannchanneltransistors. Noise Margins Aparameterthatdeterminesthemaximum noisevoltageontheinputofagatethatallows theoutputtoremainstable. Twoparameters,Lownoisemargin(NML)and Highnoisemargin(NMH). NML=differenceinmagnitudebetweenthe maxLOWoutputvoltageofthedrivinggate andmaxLOWinputvoltagerecognizedbythe drivengate.
Pseudo-nMOS Inverter
Therefore,theshapeofthetransfercharacteristic andtheVOLoftheinverterisaffectedbythe