PD - 9.

1374B

IRFI3205
HEXFET Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l

VDSS = 55V
G S

RDS(on) = 0.008 ID = 64A

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Max.
64 45 390 63 0.42 20 480 59 6.3 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)

Units
A W W/C V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient

Typ.

Max.
2.4 65

Units
C/W C/W 8/25/97

IRFI3205
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss C

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance

Min. 55 2.0 42

Typ. 0.057 14 100 43 70 4.5 7.5 4000 1300 480 12

Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, I D = 1mA 0.008 VGS = 10V, ID = 34A 4.0 V VDS = VGS, I D = 250A S VDS = 25V, ID = 59A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 170 ID = 59A 32 nC VDS = 44V 74 VGS = 10V, See Fig. 6 and 13 VDD = 28V I D = 59A ns RG = 2.5 RD = 0.39, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V VDS = 25V pF = 1.0MHz, See Fig. 5 = 1.0MHz

Source-Drain Ratings and Characteristics

IS
ISM

VSD t rr Q rr t on Notes:

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol 64 showing the A G integral reverse 390 p-n junction diode. S 1.3 V TJ = 25C, IS = 34A, VGS = 0V 110 170 ns TJ = 25C, IF = 59A 450 680 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Pulse width 300s; duty cycle 2%. t=60s, =60Hz

Uses IRF3205 data and test conditions

VDD = 25V, starting TJ = 25C, L = 190H

RG = 25, IAS = 59A. (See Figure 12)

ISD 59A, di/dt 290A/s, VDD V(BR)DSS,

TJ 175C

IRFI3205
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP

1000

I , D ra in -to -S o u rc e C u rre n t (A ) D

I , D ra in -to -S o u rce C u rre n t (A ) D

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP

100

100

4.5V

10 0.1 1

4.5 V 2 0 s PU LSE W ID TH TJ TC = 2 5C
10

10 0.1 1

20 s P UL SE W IDTH TTJ = 17 5C C
10 100

100

V D S , D rain-to-S ource V oltage (V )

V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.0

TJ = 2 5 C TJ = 1 7 5 C
100

R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )

I D = 9 8A

I D , D r ain- to-S ourc e C urre nt (A )

1.5

1.0

10

0.5

1 4 5 6 7

V DS = 2 5 V 2 0 s P U L SE W ID TH
8 9 10

0.0 -60 -40 -20 0 20 40 60 80

V G S = 10 V

100 120 140 160 180

V G S , Ga te-to-S o urce V oltage (V )

T J , Junction T em perature (C )

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

IRFI3205
8000 7000 6000 5000 4000 3000 2000 1000 0 1 10 100

C , C a p a c ita n c e (p F )

C i ss

C os s

V G S , G a te -to -S o u rc e V o lta g e (V )

V GS C iss C rss C oss

= = = =

0V, f = 1 MH z C gs + C gd , C ds SH O R TED C gd C ds + C gd

20

I D = 5 9A V DS = 44 V V DS = 28 V V DS = 11 V

16

12

C rs s

0 0 30 60 90

FO R TES T C IR CU IT SEE FIG U R E 13

120 150 180

V D S , Drain-to-Source V oltage (V)

Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000

1000

I S D , R e v e rse D ra in C u rre n t (A )

O PER ATION IN TH IS AR EA LIM ITE D BY R D S(o n)

10s

I D , D ra in C u rre n t (A )

100 1 00s

100

TJ = 1 75 C

1m s 10 10m s

T J = 25 C

10 0.6 1.0 1.4 1.8 2.2

VG S = 0 V
2.6

1 1

T C = 25 C T J = 17 5C S ing le Pulse
10 100

3.0

V S D , S ource-to-Drain Voltage (V )

V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

IRFI3205
70

VDS
60

RD

VGS RG

D.U.T.
+

I D , Drain Current (A)

50

- VDD

40 30

10V
Pulse Width 1 s Duty Factor 0.1 %

20 10 0 25 50 75 100 125 150 175

Fig 10a. Switching Time Test Circuit

VDS 90%

TC , Case Temperature

( C)
10% VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Case Temperature

Fig 10b. Switching Time Waveforms

10

(Z thJC)

D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 10 PDM t1 t2

Thermal Response

0.01 0.00001

0.0001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFI3205
VDS D.U.T. RG + V - DD
10 V

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)

1200

TO P
1000

BO TTOM

ID 2 4A 42A 59 A

800

IAS tp
0.01

600

Fig 12a. Unclamped Inductive Test Circuit

400

200

V(BR)DSS tp VDD VDS

V D D = 2 5V
25 50 75 100 125 150

A
175

Starting TJ , Junction T emperature (C)

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K

QG

12V

.2F .3F

10 V
QGS VG QGD
VGS
3mA

D.U.T.

+ V - DS

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRFI3205
Peak Diode Recovery dv/dt Test Circuit
D.U.T

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Driver Gate Drive P.W. Period D=

P.W. Period VGS=10V

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS

IRFI3205
Package Outline
TO-220 Fullpak Outline Dimensions are shown in millimeters (inches)
10.60 (.417) 10.40 (.409) 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 7.10 (.280) 6.70 (.263) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LEA D AS SIGN M EN TS 1 - GA TE 2 - D R AIN 3 - SO U RC E NO TE S: 1 D IM EN SIO N IN G & T OLER AN C ING PE R A NS I Y14.5M , 1982 1 2 3 2 C ON T R OLLIN G D IM EN SION : IN C H. 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C A D

16.00 (.630) 15.80 (.622)

1.15 (.045) M IN.

1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X

0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B

0.48 (.019) 0.44 (.017) 2.85 (.112) 2.65 (.104) 3X

M IN IM U M C REE PAG E D IST AN C E BET W EEN A -B -C -D = 4.80 (.189)

Part Marking Information

TO-220 Fullpak
E PLE : T : T IS IS N 1010 E X AMXAM PLE HI S HIS A N AIRF IRF I840G W ITW ITH S E MB LY H A S AS SE MBLY LO TLOT DE 9B 1M CO CODE E401
A

IN TE R NA T ION A L INT ER NAT IONA L R EC T IF IER IR F 1010 RE CTIF IER IRF I840G LO GO 9246
LOGO
E 9 24 9B 401 1M 5

P A RT NU M BE R

PA RT NU MBE R

A S S EM MBLY AS SE B LY LO T CO DE E LOT COD

D A TE C OD E D ATE CODE (Y YW W ) Y(YYW YE)A R Y = W YY = W AR W W = YE E EK

W W = W E EK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/