FDC6420C

September 2001

FDC6420C
20V N & P-Channel PowerTrench MOSFETs
General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features
Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 V RDS(ON) = 95 m @ VGS = 2.5 V Q2 2.2 A, 20V. RDS(ON) = 125 m @ VGS = 4.5 V RDS(ON) = 190 m @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON). SuperSOT 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

Applications
DC/DC converter Load switch LCD display inverter
D2 S1 D1

Q2(P)

4
G2

3 2 1
Q1(N)

5 6

SuperSOT
Pin 1

TM

-6

S2 G1

SuperSOT-6

Absolute Maximum Ratings

Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA=25 C unless otherwise noted

Parameter

Q1
20 12
(Note 1a)

Q2
20 12 2.2 6 0.96 0.9 0.7 55 to +150

Units
V V A

3.0 12

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

W C

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

130 60

C/W C/W

Package Marking and Ordering Information

Device Marking .420 Device FDC6420C Reel Size 7 Tape width 8mm Quantity 3000 units

2001 Fairchild Semiconductor Corporation

FDC6420C Rev C(W)

FDC6420C

Electrical Characteristics
Symbol Parameter Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)

TA = 25C unless otherwise noted

Test Conditions
VGS = 0 V, ID = 250 A VGS = 0 V, ID = 250 A ID = 250 A, Ref. to 25C ID = 250 A, Ref. to 25C VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = 250 A ID = 250 A, Ref. To 25C ID = 250 A, Ref. to 25C VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.5 A VGS = 4.5 V, ID = 3.0 A,TJ=125C VGS = 4.5 V, ID = 2.2 A VGS = 2.5 V, ID = 1.8 A VGS= 4.5 V,ID=2.2 A,TJ=125C VGS = 4.5 V, VDS = 5 V VDS = 5 V VDS = 5 V ID = 2.5 A ID = 2.0A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

Min
20 20

Typ

Max Units

V 13 11 1 1 100 100 100 100 mV/C A nA nA

On Characteristics
VGS(th) VGS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance

Q1 Q2 Q1 Q2 Q1

0.5 0.6

0.9 1.0 3 3 50 66 71 100 145 137

1.5 1.5

V mV/C

70 95 106 125 190 184

Q2

ID(on) gFS

OnState Drain Current Forward Transconductance

Q1 Q2 Q1 Q2

12 6 10 6

A S

VGS = 4.5 V, VDS = 5 V

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Q1 Q2 Q1 Q2 Reverse Transfer Capacitance Q1 Q2 VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz 324 337 82 88 42 51 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

(Note 2)

Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

For Q1: VDS =10 V, VGS= 4.5 V,

5 I DS= 1 A RGEN = 6 9 7 12 13 10 1.6 5

10 18 14 22 23 20 3 10 4.6

ns ns ns ns nC nC nC

For Q2: VDS =10 V, I DS= 1 A VGS= 4.5 V, RGEN = 6

For Q1: VDS =10 V, I DS= 3.0 A VGS= 4.5 V, For Q2: VDS =10 V, I DS= 2.2 A VGS= 4.5 V,

3.3 3.7 0.95 0.68 0.7 1.3

FDC6420C Rev C(W)

FDC6420C

Electrical Characteristics
Symbol
IS VSD

TA = 25C unless otherwise noted

Parameter

Test Conditions
Q1 Q2
(Note 2) (Note 2)

Min

Typ

Max Units
0.8 0.8 A V

DrainSource Diode Characteristics and Maximum Ratings

Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage Q1 Q2 VGS = 0 V, IS = 0.8 A VGS = 0 V, IS = 0.8 A

0.7 0.8

1.2 1.2

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 130 C/W when mounted on a 0.125 2 in pad of 2 oz. copper.

b) 140 C/W when 2 mounted on a .004 in pad of 2 oz copper

c) 180 C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDC6420C Rev C(W)

FDC6420C

Typical Characteristics: N-Channel

12
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

VGS = 4.5V ID, DRAIN CURRENT (A) 10 3.5V 8 6 4 2 0 0

3.0V

2.5V

VGS = 2.0V
1.8 1.6

2.0V

1.4

2.5V
1.2

3.0V

3.5V 4.5V

0.8 0 2 4 6 8 10 12 ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.22 RDS(ON), ON-RESISTANCE (OHM)

1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 3.0A VGS = 4.5V 1.4

ID = 1.5A
0.18

1.2

0.14

TA = 125 C
0.1

0.8

0.06

TA = 25 C
0.02

0.6 -50 -25 0 25 50 75 100

o

125

150

TJ, JUNCTION TEMPERATURE ( C)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.

10 IS, REVERSE DRAIN CURRENT (A)

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

100

VDS = 5V
ID, DRAIN CURRENT (A) 8

TA = -55oC

25 C

VGS = 0V
10 1 0.1 0.01 0.001 0.0001

125oC
6

TA = 125oC 25 C -55oC
o

0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDC6420C Rev C(W)

FDC6420C

Typical Characteristics

5 VGS , GATE-SOURCE VOLTAGE (V)

450 ID = 3A VDS = 5V 15V 10V 360 CAPACITANCE (pF) CISS 270 f = 1 MHz VGS = 0 V

180 COSS 90 CRSS

0 0 1 2 Qg, GATE CHARGE (nC) 3 4

0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

100 P(pk), PEAK TRANSIENT POWER (W) 5

Figure 8. Capacitance Characteristics.

ID, DRAIN CURRENT (A)

10

RDS(ON) LIMIT 10ms 100ms

1ms

SINGLE PULSE RJA = 180C/W TA = 25C

1 DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 180oC/W TA = 25oC 0.01 0.1 1

1s 10s

0 10 100 0.1 1 10 t1, TIME (sec) 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

FDC6420C Rev C(W)

FDC6420C

Typical Characteristics: P-Channel

6 -3.0V -2.5V -3.5V 4 3 -2.0V 2 -1.8V 1 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS =- 4.5V -ID, DRAIN CURRENT (A) 5 2.75 2.5 VGS = -2.0V 2.25 2 1.75 1.5 1.25 1 0.75 0 1 2 3 4 5 6 -ID, DRAIN CURRENT (A) -2.5V -3.0V -3.5V -4.5V

Figure 11. On-Region Characteristics.

Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.4 RDS(ON), ON-RESISTANCE (OHM)

1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -2.2A VGS = -4.5V 1.4

ID = -1.1 A
0.35 0.3 0.25 0.2

1.2

TA = 125 C
0.15 0.1

0.8

TA = 25 C 0.6 -50 -25 0 25 50 75 100

o

125

150

0.05 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE ( C)

Figure 13. On-Resistance Variation with Temperature.

5 VDS = -5V -ID, DRAIN CURRENT (A) 4 TA = -55 C 125oC
o

Figure 14. On-Resistance Variation with Gate-to-Source Voltage.

10 VGS = 0V 1 TA = 125oC 0.1 25 C 0.01 -55 C 0.001
o o

25 C

-IS, REVERSE DRAIN CURRENT (A)

0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 15. Transfer Characteristics.

Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDC6420C Rev C(W)

FDC6420C

Typical Characteristics

5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -2.2A 4

VDS =- 5V -10V CAPACITANCE (pF) -15V

600 f = 1MHz VGS = 0 V 500 400 CISS 300 200 COSS 100 CRSS 0

0 0 1 2 3 4 5 Qg, GATE CHARGE (nC)

10

15

20

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 17. Gate Charge Characteristics.

10 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 100ms 1 10s DC 1s 10ms P(pk), PEAK TRANSIENT POWER (W) 5

Figure 18. Capacitance Characteristics.

SINGLE PULSE RJA = 180C/W TA = 25C

0.1

VGS = -4.5V SINGLE PULSE o RJA = 180 C/W TA = 25 C

o

0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V)

0 0.1 1 10 t1, TIME (sec) 100 1000

Figure 19. Maximum Safe Operating Area.

Figure 20. Single Pulse Maximum Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

0.1

0.1 0.05 0.02 0.01

RJA(t) = r(t) * RJA RJA = 180C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2

0.01
SINGLE PULSE

0.001 0.0001

0.001

0.01

0.1
t1, TIME (sec)

10

100

1000

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDC6420C Rev C(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER

FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE

OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER

SMART START STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET

VCX

STAR*POWER is used under license

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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4