High Operation Efficiency of Semiconductor Electrooptic Modulators in Advanced Lightwave Communication Systems

INTERNATIONAL JOURNAL OF BASIC AND APPLIED SCIENCE
Insan Akademika Publications
P-ISSN: 2301-4458 E-ISSN: 2301-8038 Vol. 01, No. 01 July 2012
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High Operation Efficiency of Semiconductor Electrooptic Modulators in Advanced Lightwave Communication Systems
Ahmed Nabih Zaki Rashed
Electronics and Electrical Communications Engineering Department Faculty of Electronic Engineering, Menouf 32951, Menoufia University, EGYPT ahmed_733@yahoo.com
Key Words
Device modeling, Integrated optics, Optical modulator, EO modulator, and Silicon optoelectronics
Abstract
Photonic links have been proposed to transport radio frequency (RF) signals over optical fiber communication systems. External optical modulation is commonly used in high performance RF photonic links. The practical use of optical fiber communication systems to transport RF signals is still limited due to high RF signal loss. In order to reduce the RF signal loss, highly efficient modulators are needed. For many applications, modulators with broad bandwidths are required. However, there are applications that require only a narrow bandwidth. For these narrow band applications, the modulation efficiency can be improved through the resonant enhancement technique at the expense of reduced transmission bandwidth. Therefore we have been investigated to get the best performance of the transmission bit rate capacity and product of different semiconductor materials based electrooptic (EO) modulators over wide range of the affecting parameters.
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Introduction
Electro optic modulators are a kind of device important in optical networks and communication systems. The demand for electro-optic modulators has to a large extent, been driven by the desire for greater bandwidth, for high capacity local area networks (LANs), for video and audio transmitters (Mohammedet al, 2009a), for optical detection of radar and phased-array radar signals, for ultra-fast information processing such as analog to digital conversion, and for many other applications. There are several kinds of modulators, depending on their structure, such as electro optic, acousto-optic, magneto-optic and electro-absorption modulators (Nawatheet al, 2008). Each employs a different physical mechanism and has different applications. The electro-optic modulator is the most important type in optical communication systems. Different configurations have been adopted, such as the Mach-Zehnder interferometer (MZI) modulator, and the directional coupler modulator (Mohammedet al, 2009b). High speed integrated electro-optic modulators and switches are the basic building blocks of modern wideband optical communications systems and represent the future trend in ultra-fast signal processing technology. As a result, a great deal of research effort has been devoted to developing low-loss, efficient and broadband modulators in which the RF signal is used to modulate the optical carrier frequency (Mohammedet al, 2009a). Most of the work done in the area of designing electrooptic modulators has been strongly focused on using LiNbO3 (Kirmanet al, 2004). Interest in research in this field has arisen as lithium niobate devices have a number of advantages over others, including large electro-optic coefficients, low drive voltage, low bias drift, zero or adjustable frequency
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chirp, and the facility for broadband modulation with moderate optical and insertion losses and good linearity (Mohammedet al, 2009c). However, on the other hand, LiNbO3 devices cannot be integrated with devices fabricated using other material systems such as semiconductors and as a result they are best suited to external modulation applications. However, with the recent developments in semiconductor technology, modulators based on semiconductor materials have been receiving increasing attention (Mohammed et al., 2009d). In particular, AlGaAs/GaAs material offers the advantage of technological maturity and potential monolithic integration with other optical and electronic devices in creating better optoelectronic integrated circuits (Geiset al, 2007). Recently, electrooptic polymer modulators have also emerged as alternatives for optical modulators, particularly for low cost and high performance applications for the next generation metro and optical access communication systems. Today 2.5 Gbit/sec and 10 Gbit/sec modulators are standard commercial products and 40 Gbit/sec modulators are also being developed for the market after successful prototype demonstrations: however, the continuous demand to increase the high data transmission bit rate further will push their operating frequency well into the millimeter wave range (Brouckaertet al, 2007). In the present study, external modulators utilizing the electroptic effect are one class of devices currently being investigated for converting electrical signals to optical signals in applications involving high data transmission bit rate within different transmission techniques. Modulators fabricated on semiconductor substrates such as Aluminum gallium arsenide (AlGaAs) and Silica-doped materials are particularly attractive in that these exists the possibility of monolithic integration of these devices with other optoelectronic components.
2.
Mach-Zehnder Optical Modulators
Most demonstrations of electro-optic modulation in complementary metal oxide semiconductor (CMOS) compatible waveguides have relied on carrier injection within a forward biased PIN structure (Park et al, 2007). Schematic diagrams of selected electro-optic waveguide profiles from the literature are shown in Figure 1. This approach operates on the plasma dispersion effect where the overlap between carriers and the optical field in an optical waveguide is modulated, thereby changing the waveguide effective optical refractive index and loss.
Figure 1. Cross sections of selected forward biased carrier injection modulators. Electrical contact is made in the n+ and p+ regions. a.) Modulator interaction region cross section as demonstrated by Park et al, (2007), b) Modulator interaction region cross section as demonstrated by Cui and Berini (2006), c) Modulator interaction region cross section as demonstrated by Shinet al, (2007).
Significant improvements in silicon electro-optic modulator bandwidth have been demonstrated using a variation on the carrier dispersion effect where a relatively low doping level is created in the waveguide and a reverse bias is applied to modulate the overlap between the carriers and the optical field as shown in Figure 2.
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Figure 2. Cross sections for a carrier depleted modulator as demonstrated by Shojiet al, (2007).
An approach proposed for trying to provide a degree of control over the balance between high sensitivity and large bandwidth is to damage the Si crystal lattice within the intrinsic region of a PIN junction to increase the carrier recombination rate (Lee et al, 2008). The reduction of the carrier lifetime in the electro-optic region of the modulator could significantly increase the waveguide temporal response but also would have the effect of reducing the overall carrier concentration, and the associated index changes, within the waveguide. This approach would make the modulator less efficient since the increased carrier recombination rate would cause additional heating in the modulator interaction region. Furthermore, the modulator could show a disproportionately large electro-optic response in the megahertz frequency range due to heating, which would make the lower end of its frequency response range unusable without some form of additional control like electrical filtering or the electrical predistortion of the drive signal (Liuet al, 2008).
3.
3.1.
Theoretical Model Analysis

Materials Based Active Region of Electro Optic Modulators
Aluminum Gallium Arsenide (AlxGa1-xAs) The refractive index of AlxGa1-xAs in the near infrared as a function of operating signal wavelength in m and the aluminum mole fraction can be calculated using the determined Sellemier equation (Boyed, 1972; and Greenet al, 2007):
B n ( x, ) = A ( x ) + 2 D (x )2 C (x )
1 2
...(1)
Where A(x)= 10.906-2.92 x, B= 0.97501, C(x)= [0.52886-0.735x]2 for x 0.36; C(x)= [0.30386-0.105x]2 for x 0.36; and D(x)= 0.002467 (1.41x+1). Then the first and second differentiation of Eq. (1) with respect to operating signal wavelength yields as in (Mohammed et al., 2009a; Mohammed et al., 2009b; and Mohammed et al., 2009c).
Silica-doped (GeO2(y)+SiO2(1-y)) The refractive-index of silica-doped material EO modulator based on Sellemier equation is given in (Mohammed et al., 2009a; and Zhou and Poon, 2006). The Sellmeier coefficients of the refractive index of this waveguide is cast as (Zhou and Poon, 2006): A1= 0.691663+0.1107001* y, A2=(0.0684043+0.000568306y)2 (T/T0)2, A3=0.4079426+0.31021588y, A4=(0.1162414+0.03772465y)2(T/T0)2,
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A5=0.8974749-0.043311091y, and A6= (9.896161+1.94577y)2. Where T is the ambient temperature in K, T0 is considered to be as 300 K (room temperature), and x is the ratio of germanium dopant added to silica material to improve its optical performance characteristics within the range of 0.0 y 0.3 (Zhou and Poon, 2006). Then the first and second differentiation of Sellemier equation with respect to operating signal wavelength which yields as in (Mohammed et al., 2009b; and Mohammed et al., 2009d).
3.2
Optical Device Model
The induced real refractive index and optical absorption coefficient variations (n and , respectively) produced by free carrier dispersion (highly doped regions and injected carriers) of p-i-n structure at a wavelength of 1. 3 m and 1.55 m respectively are calculated by using (Xuet al, 2007 ;and Leeet al, 2007):
n = 7.9 x1023 (Ne )1.05 4.8 x1018 (N h )0.805 , = 1.1x1020 (Ne )1.15 + 3.8 x1020 (N h )1.11 , n = 1.7 x1022 (Ne )1.04 3.9 x1018 (N h )0.818 , = 2 x1021 (Ne )1.2 + 3.5 x1020 (N h )1.12 ,
(at = 1.3 m) (at = 1.3 m) (at = 1.55 m) (at = 1.55 m)
...(2) ...(3) ...(4) ...(5)
Where n is the relative refractive index difference, Ne is the electron concentration in cm-3, Nh is the hole concentration in cm-3, and is the absorption coefficient in cm-1. Fig. 3. shows a schematic cross-sectional view of the p-i-n diode MachZehnder electrooptic modulator. The intrinsic active region has height h and width w.
Figure 3. Schematic cross-section view of the p-i-n diode MachZehnder electrooptic modulator with active region has height h and width w.
The total phase shift accumulated during propagation through one arm of the modulator is given by Vlasov, et al, (2008):
= 2
nactive Lm
...(6)
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Where is the optical confinement factor for the waveguide core, Lm is the modulator length, is the operating signal wavelength, and nactive is the change in refractive index of the active region due to carrier injection. With equal injection of electrons and holes and carrier recombination and leakage out of the active region neglected, an injected current level I will result in carrier concentrations Ne and Nh given approximately by Lee et al, (2008):
Ne = N h = It q h w Lm
...(7)
Here h and w are the active region height and width in m, and t is current injection time. If the change in index is nearly linearly related to the carrier concentration. Assuming charge neutrality (Nh=Ne=N), nactive can be written as the following equation Lee et al, (2008):
nactive f N
...(8)
Where f has a value of 2.961021 cm3 and 2.111021 cm3 for N= 1018 cm3 at 1.55 m and 1.3 m, respectively. Together with (11)(13) yields:
2 f I t hw ,
...(9)
For value of the applied voltage the minority carrier current density on each side of the p-i-n junction and the carrier concentration N in the active region are obtained. The total minority carrier current density is a good estimate of the current which leaks out of the active region Jleak. The electron and hole density leaving the active region are each given by Jleak/qh, which must be equal to Lee et al, (2009):
leakage ( N ) =
qhN J leakage ,
...(10)
Where the leakage current density Jleakage is equal to injected current per unit area.
3.3
Transmission Bit Rates within EO Modulator
The total bandwidth is based on the total chromatic dispersion coefficient Dt = Dm + Dw are given by (for the fundamental mode):
Dm =
d 2n , n sec/ nm.mm c d2
n Y , n sec/ nm.mm
...(11)
ncladding Dw = cn
...(12)
Where c is the velocity of the light, 3x108 m/sec, n is the refractive-index of material based EO modulator, Y is a function of wavelength, the relative refractive-index difference n is given by the following expression:
n = n ncladding n ,
...(13)
The total pulse broadening due to total dispersion coefficient can be expressed as follows Zhou and Poon (2006); and Xu et a, (2008):
= Dt . . Lm ,
nsec
...(14)
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Then the transmission bit rate is given by:

BR = 1 0 .5 = , 2
Gbit/sec
...(15)
The transmission bit rate length product within EO modulator can be expressed as follows Zhou and Poon (2006):
PR = BR . Lm ,
Gbit.mm/sec
...(16)
4.
Simulation Results and Discussions
We have investigated semiconductor electrooptic modulators over wide range of the affecting operating parameters as shown in Table 1.
Table 1: Proposed operating parameters for our suggested electrooptic modulator device. Operating parameter T nsilica-doped nAlGaAs Q Aeff N Lm C I H W X Y Description Operating signal wavelength Spectral line width of the optical source Ambient temperature Relative refractive-index difference Relative refractive-index difference Electron charge Effective area Carrier concentration Modulator length Speed of light Injected current Active region height Active region width Aluminum mole fraction Germanium mole fraction Value 1.3 m 1.65 m 0.2 nm 300 K T 340 K 0.005 nsilica-doped 0.009 0.05 nAlGaAs 0.09 1.6x10-19 85 m2 1010 cm-3 2 mm Lm 10 mm 3 x108 m/sec 5 mA I 100 mA 0.1m h 1m 0.5 m w 5 m 0.1 x 0.5 0.1 x 0.3
Based on the model equations analysis, assumed set of the operating parameters, and the set of the Figures. (4-37), the following facts are assured as the following results: i) As shown in Figure 4. has assured that as aluminum mole fraction increases, this leads to decrease in refractive index of Aluminum Gallium Arsenide at constant operating wavelength. As well as operating wavelength increases, this results in decreasing of refractive index of Aluminum Gallium Arsenide at constant aluminum mole fraction.
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Figure 4. Variations of refractive index of AlxGa1-xAs versus aluminium mole fraction at the assumed set of parameters
Figure 5. Variations of refractive index of silica-doped versus germanium mole fraction at the assumed set of parameters
Figure 6. Variations of hole contrentation versus relative refactive index difference at the assumed set of parameters
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Figure 10. Variations of absorption coefficient versus electron concentration at the assumed set of parameters
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Figure 14. Variations of confinement factor versus active region height at the assumed set of parameters
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Figure 18. Variations of carrier leakage time versus donor doping at the assumed set of parameters
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Figure 22. Variations of carrier leakage time versus injected current density at the assumed set of parameters
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Figure 26. Variations of turn on time versus injected current density at the assumed set of parameters
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Figure 30. Variations of transmission bit rate againts germanium mole fraction at the assumed set of parameters
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Figure 31. Variations of transmission bit rate againts germanium mole fractin at the assumed set of parameters
Figure 32. Variations of bit rate lenght product againts modular lenght at the assumed set of parameters
Figure 33. Variations of bit rate lenght product againts modular lenght at the assumed set of parameters
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Figure 34. Variations of transmission bit rate againts aluminium mole fraction at the assumed set of parameters
Figure 35. Variations of transmission bit rate againts aluminium mole fraction at the assumed set of parameters
Figure 36. Variations of bit rate lenght product againts modular lenghth at the assumed set of parameters
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Figure 37. Variations of bit rate lenght product againts modular lenghth at the assumed set of parameters
ii)
Figure 5 has indicated that as germanium mole fraction increases, this leads to decrease in refractive index of silica-doped at constant ambient temperature. Moreover as ambient temperature increases, this results in decreasing of refractive index of silica-doped at constant germanium mole fraction. As shown in Figures (6-9) have demonstrated that as relative refractive-index difference increases for both Aluminum Gallium Arsenide and silica-doped materials, this result in increasing in hole concentration at constant electron concentration. As well as electron concentration increases for both Aluminum Gallium Arsenide and silica-doped materials, this lead to increase in hole concentration at constant relative refractive-index difference. We have observed that Aluminum Gallium Arsenide material presents higher hole concentration than silica-doped material at different operating wavelengths under the same operating conditions. Figures (10-13) have proved that as relative refractive-index difference increases for both Aluminum Gallium Arsenide and silica-doped materials, this result in increasing in absorption coefficient of carriers at constant electron concentration. As well as electron concentration increases for both Aluminum Gallium Arsenide and silica-doped materials, this lead to increase in absorption coefficient of carriers at constant electron concentration. We have indicated that Aluminum Gallium Arsenide material presents higher absorption coefficient than silica-doped material at different operating wavelengths under the same operating conditions. As shown in Figures (14, 15) have indicated that as active region height increases, this leads to increase in confinement factor at aluminum mole fraction. As well as aluminum mole fraction increases, this results in increasing of confinement factor at constant active region height foe different operating wavelengths. As shown in Figures (16, 17) have assured that as active region height increases, this leads to increase in confinement factor at germanium mole fraction. As well as germanium mole fraction increases, this results in increasing of confinement factor at constant active region height foe different operating wavelengths. Figures (18, 19) have demonstrated that as doping concentration increases, this leads to increase in carrier leakage time at constant germanium mole fraction. As well as germanium mole fraction increases, this results in increasing of carrier leakage time at constant doping concentration at different operating wavelengths.
iii)
iv)
v)
vi)
vii)
viii) As shown in Figures (20, 21) have proved that as doping concentration increases, this leads to increase in carrier leakage time at constant aluminum mole fraction. As well as aluminum mole fraction increases, this results in increasing of carrier leakage time at constant doping concentration at different operating wavelengths.
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ix)
Figures (22, 23) have demonstrated that as injected current density increases, this leads to decrease in carrier leakage time at constant germanium mole fraction. As well as germanium mole fraction increases, this results in increasing of carrier leakage time at constant injected current density at different operating wavelengths. Figures (24, 25) have proved that as injected current density increases, this leads to decrease in carrier leakage time at constant aluminum mole fraction. As well as aluminum mole fraction increases, this results in increasing of carrier leakage time at constant injected current density at different operating wavelengths. Figures (26, 27) have demonstrated that as injected current increases, this leads to decrease in turn on time at constant aluminum mole fraction. As well as aluminum mole fraction increases, this results in decreasing of turn on time at constant injected current at different operating wavelengths. As shown in Figures (28, 29) have assured that as injected current increases, this leads to decrease in turn on time at constant germanium mole fraction. As well as germanium mole fraction increases, this results in decreasing of turn on time at constant injected current at different operating wavelengths.
x)
xi)
xii)
xiii) Figures (30, 31) have demonstrated that as germanium mole fraction increases, this results in increasing transmission bit rates at constant relative refractive-index difference. Moreover as relative refractive-index difference decreases, this leads to decrease in transmission bit rates at constant germanium mole fraction. xiv) As shown in Figures (32, 33) have assured that as modulator length increases, this results in increasing bit rate length product at constant relative refractive-index difference. Moreover as relative refractiveindex difference decreases, this leads to decrease in bit rate length product at constant modulator length. xv) Figures (34, 35) have demonstrated that as aluminum mole fraction increases, this results in increasing transmission bit rates at constant relative refractive-index difference. Moreover as relative refractiveindex difference decreases, this leads to decrease in transmission bit rates at constant aluminum mole fraction.
xvi) As shown in Figures (36, 37) have assured that as modulator length increases, this results in increasing bit rate length product at constant relative refractive-index difference. Moreover as relative refractiveindex difference decreases, this leads to decrease in bit rate length product at constant modulator length.
5.
Conclusions
In a summary, we have investigated semiconductor materials based electoptic (EO) modulator devices under the assumed set of operating parameters. It is observed that the increased relative refractive-index difference, the increased hole concentration, and the increased absorption coefficient for semiconductor materials based electoptic modulator devices at different operating wavelengths. As well as the increased dopant concentration, and active region height for both current research materials based EO modulator devices, the increased both confinement factor, and carrier leakage time. Moreover it is indicated that as the increased dopant concentration and relative refractive index difference for current research materials based EO modulator devices, the decreased turn on time, and the increased transmission bit rates and bit rate length products.
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References
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High Operation Efficiency of Semiconductor Electrooptic Modulators in Advanced Lightwave Communication Systems

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INTERNATIONAL JOURNAL OF BASIC AND APPLIED SCIENCE

Insan Akademika Publications

P-ISSN: 2301-4458 E-ISSN: 2301-8038 Vol. 01, No. 01 July 2012

Mach-Zehnder Optical Modulators

Insan Akademika Publications

Theoretical Model Analysis

Optical Device Model

(at = 1.3 m) (at = 1.3 m) (at = 1.55 m) (at = 1.55 m)

...(2) ...(3) ...(4) ...(5)

Insan Akademika Publications

Transmission Bit Rates within EO Modulator

Then the transmission bit rate is given by:

Simulation Results and Discussions

Insan Akademika Publications

Insan Akademika Publications

Insan Akademika Publications

Insan Akademika Publications

Insan Akademika Publications

Insan Akademika Publications

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