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Objective specification
PowerMOS transistor
PHP5N40E
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDS VDGR VGS ID IDM IDR IDRM Ptot Tstg Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C Tmb = 25 C Tmb = 25 C MIN. -55 MAX. 400 400 30 6.5 4.1 26 6.5 26 100 150 150 UNIT V V V A A A A A W C C
WDSR1
290 46 7.4
mJ mJ mJ
October 1996
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHP5N40E
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 1.25 UNIT K/W K/W
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) VSD PARAMETER Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Source-drain diode forward voltage CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA VDS = 400 V; VGS = 0 V; Tj = 25 C VDS = 320 V; VGS = 0 V; Tj = 125 C VGS = 30 V; VDS = 0 V VGS = 10 V; ID = 3.25 A IF = 6.5 A ;VGS = 0 V MIN. 400 2.0 TYP. 3.0 10 0.1 10 0.8 1.1 MAX. 4.0 100 1.0 100 1.0 1.4 UNIT V V A mA nA V
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss Qg(tot) Qgs Qgd td on tr td off tf trr Qrr Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Total gate charge Gate to source charge Gate to drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Source-drain diode reverse recovery time Source-drain diode reverse recovery charge Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 15 V; ID = 3.25 A VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 2.0 TYP. 3.5 750 120 50 35 4 18 10 25 120 40 1200 6.0 3.5 4.5 7.5 MAX. 1000 180 70 25 40 140 65 UNIT S pF pF pF nC nC nC ns ns ns ns ns C nH nH nH
VGS = 10 V; ID = 6.5 A; VDS = 320 V VDD = 30 V; ID = 2.7 A; VGS = 10 V; RGS = 50 ; RGEN = 50 IF = 6.5 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 100 V Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad
October 1996
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHP5N40E
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3,7 2,8
5,9 min
15,8 max
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,6 2,4
October 1996
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHP5N40E
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
October 1996
Rev 1.000