Small amplifier

1. INTRODUCTION In the small-signal, the amplifier transistor operates in the active area of the output characteristics (output characteristics). In this area, the operation of the transistor amplifier is almost linear and can be modeled as a two-terminal network with parameters h (for low frequency) or the parameter Y (for high frequencies). Using this model, some important quantities such as voltage gain, current gain, input resistance and output resistance, the small berisyarat bertatarajah transistor amplifier common emitter (common emitter, CE), common base (common base, CB) and common collector (common collector, CC) can be determined. This experiment was the second of two experiments on the transistor. equivalent circuit of the transistor. transistors to build hybrid-In the first experiment, the parameters measured hybrid- equivalent circuit of the transistor built inIn this experiment, a small transistor amplifier berisyarat experimental results are reviewed and compared with results calculated from the equivalent circuit parameters h (for low frequency) and equivalent circuit parameters of Y (for high frequencies) which is derived from hybridthe first experiment. Given this, the experiment carried out after the first experiments performed. The same circuit used for both experiments to compare the results of experiments and calculations in this experiment can be carried out by means. In this experiment, the voltage gain, current gain, input resistance and output resistance of the small-signal transistor amplifier bertatarajah common emitter, common base and common collector, and the results obtained are compared with theoretical calculations based on the equivalent circuit parameters h (for low frequency) and equivalent circuitparameter Y (for high ferkuensi).

2. THEORY In the small-signal, the amplifier transistor operates in the active area of the output characteristics (output characteristics). In this area, the operation of the transistor amplifier is almost linear and can be modeled as a two-terminal network with parameters h (for low frequency) or the parameter Y (for high frequencies). Using this model, some important quantities such as voltage gain, current gain, input resistance and output resistance, the small berisyarat bertatarajah transistor amplifier common emitter (common emitter, CE), common base (common base, CB) and common collector (common collector, CC) can be determined. Figure 1 below shows a two-terminal network representing a transistor amplifier.

Figure 1 Here are four variables that (V1, I1) at the input terminals and (V2, I2) at the output terminal. If I1 and V2 are taken as independent variables, we obtain the model parameters h, if V1 and V2 are taken as independent variables, we obtain the model parameters Y.Both these models are discussed below.

The equivalent circuit parameters h (hybrid) The equivalent circuit parameters h (hybrid) can be used in the analysis of small berisyarat transistor amplifier at low frequencies. In Figure 1, draw I1 and V2 as the independent variables and using the superposition principle (principle of superposition), we find V1 = H11 h12 I1 + V2 (Equation 1a) H21 I1 + I2 = V2 H22 (Equation 1b) According to conventional notation in the amplifier transistor, Hi Ii Vi = Vo + hr (Equation 2a) I o = ht ho Ii + Vo (Equation 2b) or in matrix form [h], (Equation 3) Voltage gain, current gain, input resistance and output resistance in terms of the parameters h and the burden of obstacles can be published as follows:

Figure 2

Figure 3 The gain of the current:

AI = = (Equation 4a) Input resistance: Ri = = hi + hrAIRL (Equation 4b) Voltage gain (a): Gv = = =

(Equation 4c) Voltage gain (b): Gvs = = (Equation 4d) The resistance of the output: Ro = = (Equation 4e)

Conversion tables of the matrix [h] CE, [h] CC and [h] CB lowered below: [H] CC CB CE hi Hie Hie 1 hr hre hf hfe - (1 + hfe) hce ho Hoe

where he = hiehoe - hrehfe. The equivalent circuit parameters Y

Y equivalent circuit parameters can be used in the analysis of small berisyarat transistor amplifier at high frequencies. In Figure 1, draw V1 and V2 as the independent variables and using the superposition principle (principle of superposition), we find I1 = Y11 Y12 V1 + V2 (Equation 5a) I2 = Y21 Y22 V1 + V2 (Equation 5b) or in matrix form [Y], (Equation 6) The parameter Y is a complex function of frequency and can be defined as follows: Y11 = post-entry circuit (Equation 7a) Y12 = = short circuit reverse transfer graduates (Equation 7b) Y21 = = graduate next transfer circuit (Equation 7c) Y22 = = graduate output short circuit (equation 7d) Leavers input, output lepasaan, multiple current and voltage gain can be obtained as follows:

Figure 4 Yi = (Equation 8a) Yo = (Equation 8b) AI = Equation 8c) AV = (Equation 8d)

3. EXPERIMENTAL Objectives

Recovery of voltage gain, current gain, input resistance and output resistance of a common emitter transistor amplifier bertatarajah (common emitter, CE), a common collector (common-collector, CC) and the common base (common base, CB) for low and high frequencies and comparing This results in the theory (using the matrix [h] for low frequencies and the matrix [Y] for high frequency). Apparatus Resistor circuit boards The variable resistor power supply Capacitor signal generator Meter-meter transistors Multimeter

3.1 Low Frequency (I) a common-emitter (CE) The circuit shown in Figure I is connected.

Figure I and measured. , 10 k 1 k With a small signal (Vi = 10 mV peak to peak), VS, and Vo in the case of RX = AI, Ri, GV, GVS and Ro calculated. The results are compared with theory.

(Ii) Common Collector (CC) The circuit shown in Figure II is connected.

Figure II . and 300 , 500 With V = 0.4 V, V, and Vo measured for the case Rx = AI, Ri, GV, GVS and Ro calculated. The results are compared with theory.

(Iii) Common sites (CB) The circuit shown in Figure III is connected.

Figure III and measured. , 10 k 1 k With V = 10 mV, V, and V0 the case of RX = AI, Ri, GV, and Ro Gvs calculated. The results are compared with theory.

3.2 High Frequency (Optional) Frequency signal generator set at 500 kHz. Count carried out by the matrix [Y] at a frequency f = 500 kHz. found in the EUAt first, [Y] CE derived from high-frequency model of the hybrid- measurement of transistor parameters.5A: Hybrid- Later, [Y] CC and [Y] CB available. Step (i), (ii) and (iii) above is repeated at a frequency of 500 kHz. Distortion is known not to. 4. RESULTS 4.1 Decision theory Low-frequency case

In U.E. equivalent circuit for low frequencies were found with the parameters priceless. measurement of transistor parameters, hybrid-5A: Hybrid- Of these, the matrix [h] is obtained that [H] CE = = (I) bertatarajah transistor emitter amplifier (common emitter, CE) RX = = 4.8 + 100 k RL = 4.7 k AI = = = = - 69.7 Ri = = hi + hrAIRL = 3367 Gv = = = = = -99.4 Gvs = = = (-99.4) = -25.0 Ro = = = = 1.13 k RX = 10 k k = 3:24 / / 10 k RL = 4.8 k AI = = = = -76.3 Ri = = hi + hrAIRL = 3367 Gv = = = = -73.4 Gvs = = = = -18.5 -73.4 Ro = = = = 1.13 k RX = 1 k / / 1 = 828 k RL = 4.8 k AI = = = = -89.5 Ri = = hi + hrAIRL = 3367 Gv = = = = -22.0

Gvs = = = = -5.54 -22.0 Ro = = = = 1.13 k (Ii) common collector amplifier transistor bertatarajah (common-collector, CC) Hie = HRC = 1HIC = 3367 SHFC = - (1 + hfe) = - (1 +95.2) = -96.2 hoc = Hoe = 76.3 Thus, [h] CC = RX = = 4.8 + 100 k RL = 4.7 k AI = = = = 70.4 Ri = = hi + hrAIRL = 3367 + (1) (70.4) (4.8k) = 341.2 k Gv = = = = = 0990 0990Gvs = = = = 0888 Ro = = = = 426.1

RX = 500 RL = 4.8K / / 500 = 453 AI = = = = 93.0 Ri = = hi + hrAIRL = 3367 + (1) (93.0) (453) = 45.5 k Gv = = = = = 0926 0926Gvs = = = = 0499 Ro = = = = 426.1 RX = 300

RL = 4.8K / / 300 = 282 AI = = = = 94.2 Ri = = hi + hrAIRL = 3367 + (1) (94.2) (282) = 29.9 k Gv = = = = = 0888 0888Gvs = = = = 0385 Ro = = = = 426.1

(Iii) bertatarajah common base transistor amplifier (common-base, CB) In theory, it is found ) = 0.2566 he = hiehoe - hrehfe = 3367 (76.2 Hib = = = 35 HRB = = = 2667 x 10-3 HFB = = = -0.9896 Shob = = = 0793 Thus, [h] CB = RX = + 100 = 2.8 k RL = 2.7 k AI = = = = 0.9874 Ri = = hi + hrAIRL = 35 + (2.667m) (0.9874) (2.8k) = 42.4 Gv = = = = = 65.2 Gvs = = = (65.2) = 4:59 Ro = = = = 191.3 k RX = 10 k

k = 2:19 / / 10 k RL = 2.8 k AI = = = = 0.9879 Ri = = hi + hrAIRL = 35 + (2.667m) (0.9879) (2.19k) = 40.8 Gv = = = = 53.0 Gvs = = = (53.0) = 3.60 Ro = = = = 191.3 k RX = 1 k / / 1 = 739 k RL = 2.8 k AI = = = = 0.9890 Ri = = hi + hrAIRL = 35 + (2.667m) (0.9890) (739) = 36.9 Gv = = = = 19.8 Gvs = = = (19.8) = 1:22 Ro = = = = 191.3 k 4.2 Experimental Results i) a common-emitter (CE) VS / Vo mVpp / VppRX / k 1:20 38.0 10 38.0 0.96 1 38.0 0.36 Calculation: Vi = 10 mVPP RX = RL = 4.8k AIi = = = 2.8 AIo = = = 250 AI = = - = -89.3

Ri = = = 3571 Gv = = = -120 Voltage gain is negative because there are 180o phase difference between the output vs input VI Gvs = = = - 31.6 Ro = = = 4800 RX = 10 k RL = 3.24 k AIi = = = 2.8 AIo = = = 296 AI = = - = -105.7 Ri = = = 3571 Gv = = = -96 Voltage gain is negative because there are 180o phase difference between the output vs input VI Gvs = = = - 25.3 Ro = = = 3.24 k RX = 1 k RL = 828 AIi = = = 2.8 AIo = = = 435 AI = = - = -155.4 Ri = = = 3571 Gv = = = -36 Voltage gain is negative because there are 180o phase difference between the output vs input VI Gvs = = = - 9:47

Ro = = = 828

(Ii) Common Collector (CC)

VS / Vo Vpp / VppRX / 0400 00:44 500 0.54 0.220 300 0.56 0.148 Calculation: Vi = 0.4 VPP RX = RL = 4.8k AIi = = = 1:03 AIo = = = 83.3 AI = = = 80.9 Ri = = = 388.3 k Gv = = = 1.00 Voltage gain is positive because there is no phase difference between the input vs output VI Gvs = = = 0.9091 Ro = = = 4.8 k RX = 500 RL = 453 AIi = = = 3:59 AIo = = = 485.7 AI = = = 135.3 Ri = = = 111.4 k

Gv = = = 0550 Voltage gain is positive because there is no phase difference between the input vs output VI Gvs = = = 0407 Ro = = = 453 RX = 300 RL = 282 AIi = = = 4.10 AIo = = = 524.8 AI = = = 128 Ri = = = 97.6 k Gv = = = 0:37 Voltage gain is positive because there is no phase difference between the input vs output VI Gvs = = = 0264 Ro = = = 282 (Iii) Common sites (CB) VS / Vo mVpp / mVppRX / k 40 180 10 40 140 1 40 48 Calculation: Vi = 10 mVPP RX = RL = 2.8k AIi = = = 53.6 AIo = = = 64.3 AI = = = 1:20

Ri = = = 187 Gv = = = 18 Voltage gain is positive because there is no phase difference between the input vs output VI Gvs = = = 4.5 Ro = = = 2.8 k RX = 10 k RL = 2.19 k AIi = = = 53.6 AIo = = = 63.9 AI = = = 1:19 Ri = = = 187 Gv = = = 14 Voltage gain is positive because there is no phase difference between the input vs output VI Gvs = = = 3.5 Ro = = = 2.19 k

RX = 1 k RL = 739 AIi = = = 53.6 AIo = = = 65.0 AI = = = 1:21 Ri = = = 187 Gv = = = 4.8

Voltage gain is positive because there is no phase difference between the input vs output VI Gvs = = = 1.2 Ro = = = 739 5. COMPARISON OF RESULTS 5.1 Common Emitter (CE) Rx = Rx = 10k Rx = 1k Quantity Experiment Theory Experiment Theory Experiment Theory AI -69.7 -89.3 -76.3 -105.7 -89.5 -155.4 3571 3367 3367 3571 Ri 3367 3571 Gv -99.4 -120 -73.4 -96 -22.0 -36 Gvs -25.0 -31.6 -18.5 -25.3 -5.54 -9.47 828 k 13.1 13.1 k 24.3 k Ro 13.1 k 4.8 k There are similarities and also differences between the results of theoretical and experimental results. Results for Ro shows a huge difference, while the values for the RI is approximately equal value. For the decision to GV Gvs, results obtained from the two parts more or less the same can be said roughly. However, it appears that the results are the same signs of positive or negative signs on both sides of the same reading. In addition, the order of magnitude of all quantities are agreed.

5.2 Common Collector (CC) Rx Rx = 500 = 300 Quantity Rx = Experiment Theory Experiment Theory Experiment Theory AI 70.4 80.9 93.0 135.3 94.2 128 k 97.6 k 29.9 k 45.5 388.3 111.4 k Ri k 341.2 k Gv 0,990 1.00 0,926 0.55 0,888 0.37 Gvs 0,888 0.9091 0,499 0,407 0,385 0,264 453 282 426.1 426.1 426.1 Ro 4.8 k

Available theoretical results and experimental results are not so agree, especially in Ri.The values for AI, and Ro showed a slight difference but not that big gap. Has been found that the GV and Gvs to theory and experiment is similar, especially the Gvs. It was found that the results are the same sign and order of magnitude of all quantities are agreed. 5.3 Common sites (CB) Rx = 10 k = 1 k Rx = Rx Quantity Experiment Theory Experiment Theory Experiment Theory AI 0.9874 1.20 0.9879 1.19 0.9890 1.21 36.9 187 187 187 Ri 42.4 40.8 Gv 65.2 18 53.0 14 19.8 4.8 Gvs 4.59 4.5 3.60 3.5 1.22 1.2 739 k 19.3 19.3 k 19.2 k Ro 19.3 k 2.8 k Available theoretical results and experimental results are not so agree, especially in the GV, Ro and Ri. The values for AI and Gvs shows enormous similarities, especially the Gvs where both experimental and theoretical values is very similar. It was found that the results are the same sign and order of magnitude of all quantities are agreed. 6. REPORT Publish all diberkan equations above:

Figure 6 Parts of the input circuit VI = Vo hi II + hr (Equation 1) Parts of the output circuit Io = ht ho Ii + Vo (Equation 2) Found Vo = Io RL parts to the equation 2, then equation 2 to Io = ht Ii - Io ho RL (Equation 3) AI can be found by equation 1 and equation 3, the = H - ho RL or = AI = Then AI = (proven)

To get impedan input, we need to look into the input circuit, it was found Rin = = = hi + hr (Equation 4) Replace IoRL =- Vo = AIIIRL in equation 4, we find Rin = hi + hrAiRL (proven)

The gain of the voltage, GV = Vo / VI (Equation 5) Found Vo = VI = IiRI AiIiRL and substituting in equation 5 Gv = substitute for the AI = and Rin = hi + hrAiRL into and simplify, we will find Gv = = (proven) If Vs is also taken in consideration, the Gvs = Impedan output is Ro = Vo / Io From Io = ht ho Ii + Vo divide both sides by Vo go = h + ho (Equation 6) With V = 0, and take the KVL to the circuit input, we find -II (hi + Rs) - hrVo = 0 = Substituting in equation 6 go = hoRo = 1/go = (proven)

7. DISCUSSION Show the extent to which a measure AI, Ri, GV, GVS and Ro equal to the count.

Comparison of the values of measurements and calculations are shown above. The difference between the experimental and theoretical values depend on the connection,

whether CE, CC or CB. Overall, the calculations and measurements agree, especially in the count Gvs. In addition values for GV and AI showed little difference for the three types of connections. However, the order of magnitude of all quantities are to agree with one another.

Discuss the characteristics AI, Ri, GV, GVS and Ro for the transistor amplifier bertatarajah CE, CC and CB.

Characteristics of AI, Ri, GV, GVS and Ro is shown in the table below: The quantity of CB CC CE 1Higher and Higher negative AI Ri High Medium Low a HighHigher and negative GV And negative GVS Low Medium Medium Ro High Low Medium High ).Negative values of AI, GV and GVS show that the signal input and the output is the opposite phase (phase difference = 180 Comparison of measurements and calculated values of AI, Ri, GV, GVS and Ro are the differences in these values. This may be due to the following factors: to replac a) Resistors are not supplied as specified in the figure, for example, we use the resistor 50 k and 40 k . e the 47 k and 39 k b) Our calculations do not take into account the resistance measuring meters. c) This experiment and the experiment 5a UE does not run on the same day and the experiment might have been different.

8. CONCLUSION -h equivalent circuit parameters can be used in the analysis of small berisyarat transistor amplifier with small input frequency (ie 1 kHz). Configure CE, CC and CB are the characteristics of current gain, voltage gain, input resistance and the resistance of different products as examined in this experiment.

9. REFERENCES a) Edwin C. Lowenberg, Electronic Circuits, McGraw-Hill Book Company, 1983. b) Jacob Millman, Christos C. Halkias, Integrated Electronics: Analog And Digital Circuits And Systems, McGraw-Hill Book Company, 1971.