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The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices.
Features http://onsemi.com
Thermally Matched Bias Diode Instant Thermal Bias Tracking Absolute Thermal Integrity High Safe Operating Area PbFree Packages are Available*
Benefits
Eliminates Thermal Equilibrium Lag Time and Bias Trimming Superior Sound Quality Through Improved Dynamic Temperature
Response Significantly Improved Bias Stability Simplified Assembly Reduced Labor Costs Reduced Component Count High Reliability
MARKING DIAGRAM SCHEMATIC
Applications
NJL0xxxD = Device Code xxx = 281 or 302 G = PbFree Package A = Assembly Location YY = Year WW = Work Week
ORDERING INFORMATION
Device NJL0281D NJL0281DG NJL0302D NJL0302DG *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
Base Current Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range DC Blocking Voltage Average Rectified Forward Current
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase Symbol RqJC Max 0.694 Unit C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic ESD Protection Flammability Rating Human Body Model Machine Model Value >8000 V > 400 V UL 94 V0 @ 0.125 in
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200 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C)
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10 0.05 0.1
10
50
10 0.05 0.1
10
50
VCE = 5.0 V 1.2 1 25C 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A)
1.4
1.4
25C 100C
0.9
0.1
10
100
10 VCE(sat), COLLECTOREMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOREMITTER SATURATION VOLTAGE (V) IC/IB= 10
10 IC/IB= 10
0.01 0.01
0.1
10
100
0.01 0.01
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0.1
10
0.1
10
10
0.1 TJ = 25C
0.01
100C 0.01
0.001
TJ = 25C
0.0001 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS)
0.001 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
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T Y B Q 0.25 (0.010) U N A R
1 2 3 4 5 M
T B
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 25.857 25.984 26.111 1.018 1.023 1.028 B 19.761 19.888 20.015 0.778 0.783 0.788 C 4.928 5.055 5.182 0.194 0.199 0.204 0.0480 BSC D 1.219 BSC E 2.032 2.108 2.184 0.0800 0.0830 0.0860 1.981 BSC 0.0780 BSC F 0.150 BSC G 3.81 BSC H 2.667 2.718 2.769 0.1050 0.1070 0.1090 0.0230 BSC J 0.584 BSC K 20.422 20.549 20.676 0.804 0.809 0.814 0.444 REF L 11.28 REF 7_ 0_ 7_ 0 _ M 0.180 REF N 4.57 REF P 2.259 2.386 2.513 0.0889 0.0939 0.0989 0.1370 BSC Q 3.480 BSC 0.100 REF R 2.54 REF S 0 _ 8_ 0_ 8_ 0.243 REF U 6.17 REF W 0 _ 6_ 0_ 6_ 0.0940 BSC Y 2.388 BSC STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. ANODE 5. CATHODE
P K
M F 5 PL
G D 5 PL 0.25 (0.010) W
J H
M
T B
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NJL0281D/D