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DSEI 2x 101

Fast Recovery
Epitaxial Diode (FRED)

VRSM

VRRM

1200

1200

VRRM = 1200 V
IFAVM = 2x 91 A
trr
= 40 ns

miniBLOC, SOT-227 B
E72873

Type

DSEI 2x 101-12A

Symbol

Test Conditions

Maximum Ratings (per diode)

IF(RMS)
IF(AV)M
IFRM

TVJ = TVJM
TC = 50C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM

IFSM

TVJ = 45C;

Features
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
matched diodes f. parallel operation
Planar passivated chips
two independent diodes
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour

130
91
TBD

A
A
A

t = 10 ms (50 Hz), sine


t = 8.3 ms (60 Hz), sine

900
970

A
A

TVJ = 150C; t = 10 ms (50 Hz), sine


t = 8.3 ms (60 Hz), sine

810
870

A
A

t = 10 ms (50 Hz), sine


t = 8.3 ms (60 Hz), sine

4100
4000

A2s
A2s

TVJ = 150C; t = 10 ms (50 Hz), sine


t = 8.3 ms (60 Hz), sine

3300
3200

A2s
A2s

-40...+150
150
-40...+150

C
C
C

250

2500

V~

I2t

TVJ = 45C

TVJ
TVJM
Tstg
Ptot

TC = 25C

VISOL

50/60 Hz, RMS


IISOL 1 mA

Md

Mounting torque
Terminal connection torque (M4)

1.5/13
1.5/13

Weight

30

Symbol

Test Conditions

IR

TVJ = 25C
TVJ = 25C
TVJ = 125C

VR = VRRM
VR = 0.8 VRRM
VR = 0.8 VRRM

IF = 100 A;

TVJ = 150C
TVJ = 25C

VF
VT0
rT
RthJC
RthCH

3
1.5
15

mA
mA
mA

1.61
1.87

V
V

1.01
6.1

V
mW

0.5

K/W
K/W

0.05

miniBLOC, SOT-227 B

Nm/lb.in.
Nm/lb.in.

Characteristic Values (per diode)


typ.
max.

For power-loss calculations only

M4 screws (4x) supplied


Dim.

Millimeter
Min.
Max.

Inches
Min.
Max.

A
B

31.50
7.80

31.88
8.20

1.240
0.307

1.255
0.323

C
D

4.09
4.09

4.29
4.29

0.161
0.161

0.169
0.169

E
F

4.09
14.91

4.29
15.11

0.161
0.587

0.169
0.595

G
H

30.12
37.80

30.30
38.20

1.186
1.489

1.193
1.505

J
K

11.68
8.92

12.22
9.60

0.460
0.351

0.481
0.378

L
M

0.76
12.60

0.84
12.85

0.030
0.496

0.033
0.506

N
O

25.15
1.98

25.42
2.13

0.990
0.078

1.001
0.084

trr

IF = 1 A; -di/dt = 400 A/s; VR = 30 V; TVJ = 25C

40

60

ns

P
Q

4.95
26.54

5.97
26.90

0.195
1.045

0.235
1.059

IRM

VR = 100 V; IF = 75 A; -diF/dt = 200 A/s


L 0.05 mH; TVJ = 100C

24

30

R
S

3.94
4.72

4.42
4.85

0.155
0.186

0.174
0.191

T
U

24.59
-0.05

25.07
0.1

0.968
-0.002

0.987
0.004

V
W

3.30
0.780

4.57
0.830

0.130
19.81

0.180
21.08

IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

2000 IXYS All rights reserved

008

1-2

DSEI 2x 101, 1200V

16 T = 100C
C VVJ = 600V
14 R

150
A
125
IF

140
TVJ= 100C
A
VR =600V
120
IRM

Qr 12
100

100

10

IF=200A
IF=100A
IF= 50A

TVJ=150C

75
TVJ=100C

80

50
TVJ= 25C

40

25

20

0
0.0

0.5

IF=200A
IF=100A
IF= 50A

60

1.5 V
VF

1.0

0
100

2.0

Fig. 1 Forward current IF versus VF

A/ms 1000
-diF/dt

Fig. 2 Reverse recovery charge Qr


versus -diF/dt
500

1.4

450

1.2

400

ms 1000
600 A/
800
-diF/dt

Fig. 3 Peak reverse current IRM


versus -diF/dt
TVJ= 100C
IF = 100A

50
VFR

400

40

350

30

IRM

IF=200A
IF=100A
IF= 50A

300

s
tfr

tfr

0.8

1.5

1.0

1.0

VFR

0.5

20

Qr

0.6

10

250

0.4

200
0

40

80

120 C 160

200

400

TVJ

Fig. 4 Dynamic parameters Qr, IRM


versus TVJ

600 A/
800
ms 1000
-diF/dt

Fig. 5 Recovery time trr versus -diF/dt

1
K/W

0
0

200

400

600 800
diF/dt

0.0
1000
A/ms

Fig. 6 Peak forward voltage VFR and tfr


versus diF/dt
Constants for ZthJC calculation:
i
1
2
3
4
5

D=0.7

ZthJC

200

trr

Kf

60

TVJ= 100C
VR = 600V

ns

0.5
0.3

Rthi (K/W)

ti (s)

0.02
0.05
0.076
0.24
0.114

0.00002
0.00081
0.01
0.94
0.45

0.2
0.1

0.1

0.05
Single Pulse

0.05
0.001

DSEI 2x101-12

0.01

0.1

1s

10
t

Fig. 7 Transient thermal impedance junction to case at various duty cycles

2000 IXYS All rights reserved

2-2

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