EE 121B / Winter 2008 / Prof.

Chui EE 121B Principles of Semiconductor Device Design Winter 2008 Homework #4 (Due Date: Feb 26th, 2008, 2pm)

Homework #04, p.1

Physical constants: I. Electronic charge = 1.60 10-19 C II. Vacuum Permittivity = 8.85 10-14 F/cm III. Boltzmann constant = 8.62 10-5 eV/K IV. Planck constant = 6.63 10-34 J-s V. Electron mass in vacuum = 9.10 10-31 kg General assumptions in all problems unless specifically stated otherwise: I. Temperature = 300 K II. Semiconductor = Silicon a. Intrinsic carrier concentration 1 1010 cm-3 b. Permittivity = 11.8 c. Electron affinity = 4.0 eV d. Energy bandgap = 1.12 eV III. Insulator = Silicon dioxide a. Permittivity = 3.9 1) For a p-channel MOS capacitor with a p+ polysilicon gate electrode, an n-type substrate doping of 1016 cm-3, and gate oxide thickness of 30 nm, a) Calculate i) The capacitance per unit area at flat band, ii) The capacitance per unit area at minimum, and iii) The threshold voltage b) Repeat a) if the p+ polysilicon gate electrode is replaced with n+ polysilicon and comment on any difference(s) observed 2) For the same MOS capacitor in 1), with a positive oxide trapped charge density of 1012 cm-2 located at the oxide/substrate interface, a) Calculate the threshold voltage b) Sketch as a function of position across the MOS structure at strong inversion: i) The electric field, and ii) The potential c) Sketch the low-frequency capacitance-voltage characteristics from accumulation to inversion with and without the oxide trapped charges d) Repeat c) on the same graph if the oxide trapped charges are negative instead of positive