BF2030...

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Pb-free (RoHS compliant) package 1) Qualified according AEC Q101

Drain AGC RF Input RG1 VGG G2 G1

RF Output + DC

GND

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model

Type BF2030 BF2030R BF2030W

Package SOT143 SOT143R SOT343 1= S 1= D 1= D 2=D 2=S 2=S

Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 -

Marking NDs NDs NDs

Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS 76 C, BF2030, BF2030R TS 94 C, BF2030W Storage temperature Channel temperature
1Pb-containing

Symbol VDS ID IG1/2SM +VG1SE Ptot

Value 8 40 10 6 200 200

Unit V mA V mW

Tstg Tch

-55 ... 150 150

package may be available upon special request

2007-04-20

BF2030...
Thermal Resistance Parameter Channel - soldering point 1) BF2030/ BF2030R BF2030W Symbol
Rthchs

Value 370 280

Unit K/W

Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 20 A, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 k Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 A Gate2-source pinch-off voltage VDS = 5 V, I D = 20 A
1For

Symbol min. V(BR)DS +V(BR)G1SS +V(BR)G2SS +IG1SS +IG2SS IDSS IDSX VG1S(p) VG2S(p) 10 6 6 0.3 0.3

Values typ. 12 0.5 0.6 max. 15 15 50 50 50 -

Unit

nA

A mA V

calculation of R thJA please refer to Application Note Thermal Resistance

2007-04-20

BF2030...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. AC Characteristics (verified by random sampling) gfs Cg1ss 27 31 2.4 2.8 mS pF Forward transconductance VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Output capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Power gain VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz G p 40 50 F 1.5 2.2 dB Gp 20 23 dB Cdss 1.3 typ. max.

Unit

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BF2030...
Total power dissipation Ptot = (TS) BF2030, BF2030R Total power dissipation Ptot = (TS) BF2030W

220
mW

220
mA

180 160

180 160

P tot

140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150

P tot

140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150

TS

TS

Drain current ID = (IG1) VG2S = 4V

28 mA 24 22 20

Output characteristics ID = (V DS) VG2S = 4V VG1S = Parameter

20
mA 1.4V

16 14
1.3V

ID

ID

18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 A 100

12
1.2V

10 8 6
1V

1.1V

4 2 0 0
0.8V

10

IG1

VDS

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BF2030...
Gate 1 current IG1 = (V G1S) VDS = 5V VG2S = Parameter
210 A 180 165 150
3.5V 4V

Gate 1 forward transconductance g fs = (ID) VDS = 5V, VG2S = Parameter

40
mS 4V

30

3V

I G1

135 120 105 90 75 60 45 30 15 0 0 0.4 0.8 1.2 1.6 2 2.4

V 2V 2.5V 3V

g fs

25
2.5V

20
2V

15

10

0 0

12

16

20

24 mA

30

VDS

ID

Drain current ID = (VG1S) VDS = 5V VG2S = Parameter

30 mA
4V

Drain current ID = (V GG) VDS = 5V, VG2S = 4V, RG1 = 100k

(connected to VGG, V GG=gate1 supply voltage)
13 mA 11

24 22

3V

10 9

20

ID

ID
2V 1.5V V

18 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2

8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4

V

VG1S

VGG

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BF2030...
Drain current ID = (VGG) VG2S = 4V RG1 = Parameter in k
28 mA
70

Crossmodulation Vunw = (AGC) VDS = 5 V

120
dBV

24 22 20
100 80

110

ID

18 16 14 12 10 8
120

V unw

105

100

95

90 6 4 2 0 0 1 2 3 4 5 6
V

85

80 0

10

20

30

40

dB

55

VGG=VDS

AGC

2007-04-20

BF2030...
Cossmodulation test circuit

VAGC

VDS 4n7

R1 10k 4n7

2.2 uH

4n7

RL
50

RGEN
50

4n7 50 RG1

VGG

Semibiased

2007-04-20

Package SOT143

BF2030...

Package Outline
0.15 MIN.

2.9 0.1 1.9

4 3

1 0.1 0.1 MAX.

1.3 0.1

2.4 0.15

10 MAX.

10 MAX.

0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B

0.08...0.1

0...8 0.2 M A

Foot Print
0.8 1.2 0.8
0.9

1.2 0.8

0.8

Marking Layout (Example)

Manufacturer

RF s
Pin 1

56

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel

0.9

1.1

2005, June Date code (YM)

BFP181 Type code

0.2

Pin 1

3.15

2.6 8

1.15

2007-04-20

Package SOT143R

BF2030...

Package Outline
B
0.15 MIN.

2.9 0.1 1.9

4 3

1 0.1
0.1 MAX.

2.4 0.15

2 0.2
+0.1 0.8 -0.05

10 MAX.

0.08...0.15

0.4 +0.1 -0.05 1.7 0.25

M

0... 8
0.2
M

Foot Print
0.8 1.2 0.8

0.8

0.8

1.2

Marking Layout (Example)

Reverse bar

0.9

1.1

0.9

2005, June Date code (YM)

Pin 1

Manufacturer
BFP181R Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2

Pin 1

3.15

2.6

1.15

10 MAX. 1.3 0.1

2007-04-20

Package SOT343

BF2030...

Package Outline
2 0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1
M +0.1 0.6 -0.05

0.9 0.1 0.1 MAX. 0.1 A

1.25 0.1 2.1 0.1

0.1 MIN.

0.15 -0.05 0.2

M

+0.1

Foot Print
0.6
0.8

1.15 0.9

Marking Layout (Example)

Manufacturer

1.6

2005, June Date code (YM)

Pin 1

BGA420 Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2

Pin 1

2.15

2.3

1.1

10

2007-04-20

BF2030...
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 2007. All Rights Reserved.

Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

11

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