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EE/JUNE 2012/ELE541/KJE412

UNIVERSITI TEKNOLOGI MARA FINAL EXAMINATION

COURSE COURSE CODE EXAMINATION TIME

SEMICONDUCTOR DEVICES/SOLID STATE DEVICES ELE541/KJE412 JUNE 2012 3 HOURS

INSTRUCTIONS TO CANDIDATES 1. 2. 3. This question paper consists of five (5) questions. Answer ALL questions in the Answer Booklet. Start each answer on a new page. Do not bring any material into the examination room unless permission is given by the invigilator. Please check to make sure that this examination pack consists of: i) ii) iii) the Question Paper a eight - pages Appendix an Answer Booklet - provided by the Faculty

4.

DO NOT TURN THIS PAGE UNTIL YOU ARE TOLD TO DO SO

This examination paper consists of 5 printed pages
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EE/JUN 2012/ELE541/KJE412

QUESTION 1

a)

Define drift and diffusion with the aid of diagrams. (3 marks)

b)

i)

Identify two (2) mechanisms of scattering applied to both minority and to majority carriers in semiconductor. State the condition when each scattering mechanism is more significant and dominant than the other. (2 marks) Calculate the minority electron diffusion current density for a given a p-type Si sample of NA=1018cm"3 and ND=0, length of 1pm and the hole concentration drops linearly from 1016cm"3 to 1013cm"3 respectively. (3 marks) Consider an n-type Silicon sample with ND - NA = 1017 cm"3. Under illumination, the excess carriers An = Ap = 5x1016 cm"3 .Find the quasi Fermi levels for electrons and holes. Compare the results with Fermi levels when the light is off. (6 marks)

ii)

iii)

c)

Illustrate the energy band diagram for GaAs that is doped such that: Ec~ Ef = 0.2+ (0.8 eV/um)x i) ii) iii) for 0<x<0.5 urn.

Find the effective electric field for electrons. Identify the direction of the electric field. Identify the directions of Jn(diff), Jn(difit), Jp(diff), and Jp(drift). (6 marks)

QUESTION 2 a) Discuss why the depletion region extend deeper into the lightly doped region of a PN diode. (4 marks) Consider a uniformly doped silicon pn junction with doping concentrations NA=5x1017cm"3 and ND = 1017cm"3. The junction has a cross sectional area of 10"4cm2 and has an applied reverse bias voltage of V a = -5V. Calculate: i) ii) iii) The built in voltage The maximum electric field The total junction capacitance (8 marks)
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b)

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EE/JUN 2012/ELE541/KJE412

c)

i)

Consider a one sided silicon pn junction with N A N D . Suppose this one sided junction has a donor doping of 5x1016cm"3 on the n side and a cross sectional area of 10"3cm2.lf 2^=1 us and Dp=10cm2/s. Calculate the current with a forward bias of 0.5V at 300K. (6 marks) Illustrate the band diagram of a pn junction labeling all the appropriate energy levels and identify all the current components under equilibrium condition indicating their directions (p to n or n to p) to show that there is no net flow of electron or hole current (7 marks)

ii)

QUESTION 3 a) Briefly describe how base graded doping can increase common emitter current gain of a transistor. (4 marks) i) In a uniformly doped npn bipolar transistor, the following current values are measured: lnE = 1-8 mA, lpE = 0.1mA, lnC = 1.78 mA, lBrec = 0.35mA. Determine parameters a, (3, y and aT for the transistor. Discuss how the increase in emitter doping may affect the gain of BJT. (11 marks)

b)

ii)

QUESTION 4 a) i) Name 5 type of charges in a MOSFET that affect the threshold voltage. (4 marks)

ii)

With the aid of lD-VD characteristics of a MOSFET, briefly describe the three regions of sublinear, saturation and subthreshold. (5 marks)

b)

The diagrams Figure Q4b show the energy band diagram and the charge distribution for different biasing conditions in a MOS capacitor such as equilibrium, accumulation, inversion and depletion for NMOSFET. Identify each condition and explain using the energy band diagram.

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EE/JUN 2012/ELE541/KJE412

1
^.

..

ML
Qr,
QG {a) QR

m
it)

M^tf

^?*~"

Qr

QB T~ZIF

uh
(c)
Figure Q4b
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(8 marks)

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EE/JUN 2012/ELE541/KJE412

c)

An enhancement NMOS has a threshold voltage of VT = 1V, a channel length of 1um, and a width of 5um. Considering velocity saturation, vsat = 5x106cm/s and low field mobility, U|f = 500 cm2 / V.s. Calculate the current lD and identify the region of operation for :-

i) ii)
d)

v G S =2V,V D S =1V v G S =3V,V D S =1V

(6 marks)

Plot lD-VDS characteristic for a MOSFET using constant mobility model and then taking the transverse field into account for VGS - Vr = 4V, VDs from 0 to 5V,

= 5,0 = 0.13V J0x=5nm

curves.

and ju0 = 480cm /V.s.

Thus, compare the two

(7 marks)

QUESTION 5 a) What type of emission does LED and Laser Diode required for its operation ? State the two conditions for producing a lasing in laser diode. (4 marks)
+

b)

If the doping in the p region of an n p photodiode is decreased, one would expect the diffusion length in a solar cell to increase. Verify (or contradict) this by calculating the quatum efficiency of silicon solar cell for X = 1 um (a= 10~2 urn"1)
16 -3

and near the peak solar energy at X = 0.5 um (a = 1 urn ) with A/^ =10 cm , R = 0.2, xn = 0.4 um and W'p = 500 um. .For a factor of 10 change in doping, what was the change i n n ? (6 marks)

END OF QUESTION PAPER

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APPENDIX 1

EE/JUNE 2012/EUE541/KJE412

Standard Equations: Semiconductor Fundamentals

f(E) =

1
E-EF

Equation 1
/kT

l +e (EC-EF) n0 = Nc exp kT ~(EF-Ey) Po = Ny e*P kT n0 p 0.F0 n0 p, 0.F0 Nc

_ NA ^Eg*lkTni2

Equation 2 Equation 3 Equation 4 Equation 5

3

N
3
,n

Nc =2.54x10'

dsf. dse

K o

( T \ v 300y

Equation 6

( -.* \l( J \ Nv =2.54x10 19 mdsh \mo J .300 ) n] - NCNV exp n0 = n, exp Po = n, exp 8n= Ec-Ef Sp = Ef-Ev kT

Equation 7

Equation 8

EF-E~ kT (EF-E,) kT N = kT\r\ r = kT\n ~N' nE +

V

Equation 9

Equation 10

Equation 11

Equation 12

dx Jp=qMppE-qDp-?-

kT dn q dx q dx

Equation 13

= qMp
V

Equation 14 Equation 15 Equation 16

a = q(linn + {ipp) n. D_kT H q

Equation 17

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APPENDIX 2

EE/JUNE 2012/ELE541/KJE412

Standard Equations: Semiconductor Fundamentals v d =|j2?

- Equation 18

4 = 4DJn

P = ^DpTP
- Equation 19 - Equation 20 - Equation 21

vp tw

-1
v

V w IB IB -1 nq

Hn

nq pq

R Hp

- Equation 22

- Equation 23

Standard Equations: pn Junction

T/

kT. NDNA
+

Equation 1 Equation 2 Equation 3 Equation 4 Equation 5

Vbi=~

kT

N N In ^ ^ ( p q nt

n junction)

.. kT. NCNA . + . .. . Vbi = I n L A (n pjunction)

nf

qVbi =

Eg-(Sn+Sp)

VAwt 1 2s "
3

2s

"
1/2

Equation 6

wn ~

\X0

<7#r
n)~

2sV, qNL
1/2

\<Fi

D J

Equation 7

f
W

P =

(XP-XO)--

V ^

r qN
J

2eV,

Equation 8

qNA

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APPENDIX 3

EE/JUNE 2012/ELE541/KJE412

I/2

w = w +w =
n p

Equation 9

qNAND
(n+p junction) Equation 10

2sV^

W =

qN KWAJ
f

2sV^12

wV,= j

(p+n junction)

Equation 11

qNDNAw2

2e(ND+NA)
=AT'
e-qVbiikT

Equation 12

Equation 13

PnO=NAe

-qvhlikT

Equation 14

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APPENDIX 4

EE/JUNE 2012/ELE541/KJE412

Standard Equations: pn Junction

x n e P( P)= po

oWjkT

- Equation 15 - Equation 16 - Equation 17 - Equation 18

Pn(xn) = P^VJkr Anp(xp)=np0(e^-\)

*pn(xn)=P4eqVJkT-1) K = ylDj ; Lp = JDJ~P

D n

J=q V L

n pO

pPnO

LP I=

(e^lkT-l)=J0(e^lkr-l)
J

- Equation 19

I^VJkT-\)
1/2

- Equation 20

Cj=A

- Equation 21

2(ND qsN

NAyVbl-Va\
- Equation 22

1/2

Cj=A

.m.-Ki
Wp
j =

(one-sided junction)

(heterojunction) Vw
W

Equation 23

PJ

Csc=^

= S ^ = SIrn dVa dVa

qVa

Equation 24

Rm = n,e 2r JR

2KT

- Equation 25

=+qwRn

Equation 26

JG = -qn^w 2r

Equation 27

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APPENDIX 5

EE/JUNE 2012/ELE541/KJE412

Standard Equations: Field Effect Devices

ID =

0,VGS<VT

- Equation 1

C ox WC'ox\X L

Sox tax

L=

(VaS-Vr)Vos

V\s

- Equation 2

V^, =
iDsal

(Vas-Vr)

WC\x\i
L
VGS>VT,VDS>VD*.

Vas-Vf

VDSsal

- Equation 3

WC
* r>mi Dsat

2L
V

^(vGS-vTy=^^(yial)
>VDsat ~ VT ~ VD&OI)

- Equation 4 - Equation 5

VGS > T>

vDS

I Dial = C' ' OxWVsa,(VaS

VDS >VDSsat

- Equation 6
[Xo
\Xi/ = 1+ B(VC,S-VT)

- Equation 7

'u2Mlf{VGS-VT)
v

1/2

DSAT V

-1

- Equation 8

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APPENDIX 6

EE/JUNE 2012/ELE541/KJE412

Standard Equations: Bipolar Junction Transistors

Ic = aIE

Equation 1 Equation 2
T

h = Ph
1+ 1
1VBE

he

KT , KT

Equation 3

I = I e KT

Equation 4

I=LeKT

- Equation 5

Equation 6

L
npn transistros: ye =

L.
1

En

Equation 7 Equation 8

hP+IEn a P = \-a

l+^JL

JL *JL

NE'DB'LE

1+

l PE(Q-)DpEWB nB{^)DnBWE

Equation 9

aT -

Cp Ep , 1

f..
B

\2
j

Equation 10

2Ll

1 + -\L
2

nB(0+) =

nBO{exV{qVBE/KT-\)}

Equation 11

pE(0-) =

PEO{^V{qVBE/KT-l)}

Equation 12

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APPENDIX 7

EE/JUNE 2012/ELE541/KJE412

Table of Constants Speed of light in vacuum Permittivity of vacuum Boltzmann's constant Planks' constant h-bar kT, room temperature (T= 300K) Free electron mass (at rest) Electronic charge c
So

2.9979 x l 0 8 m / s 8.8542 xlO"12 F/m 8.8542 xl0~ 14 F/cm 1.38xlO-23 J/K 8.62xlO" 5 eV/K 6.63 xlO -34 J.s 4.14 xlO"15 eV.s 1.06xlO"34 J.s 6.59xl0~16 eV.s 0.0259 eV 0.0259 V 9.11xl0~31 kg 1.60xlO" 19 C

k h
h/2TT

kT kT/q m0 C

Properties of silicon, gallium arsenide and germanium.

Eg Nc
Ny
"/

Z sr (intrinsic)
^pho

Silicon 1.1242eV 2.86xl019cm"3 3.10xl019cm~3 1.08xl010cm-3 4.05eV 11.8 (Si0 2 :3.9) lxl0 7 cm/s (electrons and holes) 0.063eV

GaAs 1.43eV 4.4xl017crrT3 8.4xl018cirf3 2.2xl0 6 cirf 3 4.07 13.2 6xl0 6 cm/s (electrons) 0.034eV

Ge 0.67eV 1.05xl019cm"3 4.0xl018crrf3 1.64xl013cirf3 4.0 16.0 6xl0 6 cm/s (electrons and holes) 0.034eV

InP 1.35eV 2.02xlO,8crrT3 6.8x10 18 crrf 3 1.97x10''cm"3 4.35 12.4

*e

*h

Si GaAs Ge InP

1.09 0.067 0.56 0.077

1.150 0.48 0.292 0.42

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APPENDIX 8

EE/JUNE 2012/ELE541/KJE412

00

o z
Q

10

I
8

/) (major

(minority} (minority]

8 v.
,i,..,x.,.a.a.-i.vUjl,w,.-1-.1JT,< f~-XLi-ii,UL ,^-i--.-,,L,-,i-,i.i,ii-i.l,.-,-.-.-.i,-,-. t..i \,nil,.,.,--i.-.-.i..j,uuil 16 17 IK 20 10 10 l() I0,y 10 Doping concentration NDorNA (cm ")

10

Q-" ! { ) 1

I ,,1.1,1.. I. t i l

J..I....] I...I 11, [J

I ,l!LiU,i

,!,,[ U.J.I I.I

,,l H>

lLiOXU

1015

10'

10' 10IX lloping concentration NA or t\'D (cm ')

10

lo-

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