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gc ( E ) dE
The number of conduction band states/cm3 lying in the energy range between E and E + dE (if E Ec).
gv ( E ) dE
The number of valence band states/cm3 lying in the energy range between E and E + dE (if E Ev).
General energy dependence of gc (E) and gv (E) near the band edges.
Fermi-distribution function.
f ( E) =
1 1+ e
( EE f ) / kT
Ef Fermi energy (average energy in the crystal) k Boltzmann constant (k=8.61710-5eV/K) T Temperature in Kelvin (K)
f(E)
f ( E) =
1 1+ e
( EE f ) / kT
kT = 0.0259eV @300K
At T=0K, occupancy is digital: No occupation of states above Ef and complete occupation of states below Ef . At T>0K, occupation probability is reduced with increasing energy. f(E=Ef ) = 1/2 regardless of temperature.
f ( E) =
1+ e
1 ( EE f )/ kT
kT = 0.0259eV @300K
At T=0K, occupancy is digital: No occupation of states above Ef and complete occupation of states below Ef . At T>0K, occupation probability is reduced with increasing energy. f(E=Ef ) = 1/2 regardless of temperature. At higher temperatures, higher energy states can be occupied, leaving more lower energy states unoccupied [1 - f(Ef )].
Solution
The Fermi function, f(E), specifies the probability of electron occupying states at a given energy E. The probability that a state is empty (not filled) at a given energy E is equal to 1- f(E).
gc ( E ) f ( E ) dE
f ( EC ) = 1 f ( EV )
f (EC ) = 1 1 + e ( EC E F ) / kT
1 f ( EV ) = 1 1 1 = 1 + e ( EV E F ) / kT 1 + e ( E F EV ) / kT
gv ( E ) f ( E ) dE
EC EF kT
EV E F kT
EF =
EC + EV 2
Otherwise
Ec+
CB
Area = n E ( E ) dE = n
nE(E) number of electrons per unit energy per unit volume The area under nE(E) vs. E is the electron concentration. pE(E) Area = p
Ec EF Ev
Intrinsic Semiconductor.mov
EFn Ec Ev
CB
Ec Ev EFp VB
Degenerated p-type semiconductor
(a) intrinsic
(b) n-type
(c) p-type
Degenerated n-type semiconductor Large number of donors form a band that overlaps the CB
np = ni2
Note that donor and acceptor energy levels are not shown.