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CHG N O T I C E 2
7777770 OL770Lb L 4 T
INOT
MEASUREMENT SENSITIVE 1
~~~
________
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MILITARY HANDBOOK
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
THIS HANDBOOK IS FOR GUIDANCE ONLY DO NOT CITE THIS DOCUMENT AS A REQUIREMENT
AMSC NIA DISTRIBUTION STATEMENT A: Approved for public release: distribution unlimited.
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MIL-HDBK-~IJ~F CHG N O T I C E 2
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377
NOTICE OF CHANGE
NOT MEASUREMENT
MIL-HDBK-217F NOTICE 2 28 February 1995
THIS HANDBOOK IS FOR GUIDANCE ONLY DO NOT CITE THIS DOCUMENT AS A REQUIREMENT
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MIL-HDBK-~IJ~F CHG N O T I C E 2
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Ol1970I1.5 203 9
MIL-HDBK-217F NOTICE 2
2.
Retain the pages of this notice and insert before the Table
of Contents.
3.
Holders of MIL-HDBK-217F will verify that page changes and additions indicatedhavebeen entered. The notice pages will be retainedasachecksheet.Theissuance, together with appended pages, is a separate publication. Each notice is to be retained by stocking points until the military handbookis revised or canceled. Preparing Activity: Air Force 17
Review Activities: Army - MI, AV, ER Navy - SH, AS, OS Air Force - 11, 13,15, 19, 99 Army - AT, ME, GL Navy - CG, MC, YD, TD Air Force - 85
AMSC NIA DISTRIBUTION STATEMENTA: Approved for public release; distribution unlimited.
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HIL-HDBK-ZI7F NOTICE
RE H 9 9 9 9 7 7 0 007b088 b
NOTICE OF CHANGE
MILITARY HANDBOOK RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT To all holders of MIL-HDBK-217F 1. The following pages of MIL-HDBK-217F have been revised and supersede the pages listed. New Page(s) vi 5-3 5-4 5-7 5-8 5-9 5-1O 5-11 5-12 5-13 5-14 5-19 5-20 6-15 6-16 7-1 7-2 12-3 12-4 A- 1 A-2 A-3 A-4 A-5 A-6 A-7 A-8 A-9 A-1O A-11 A-12 A-13 A-14 A-15 A-16 Date Superseded Page(s) vi i 5-3 5-4 5-7 5-8 5-9 5-1O 5-11 5-12 5-13 5-14 5-19 5-20 6-15 6-16 7-1 7-2 12-3 12-4 A- 1 A-2 A-3 A-4 A-5 A-6 A-7 A-8 A-9 A-1O A-1 1 A-12 A-13 A-14 A-15 A-l6 Date 2 December 199 1 2 December 1991 2 December 1991 2 December 1991 Reprinted withoutchange 2 December 1991 Reprinted without change Reprinted without change 2 December 1991 2 December 1991 Reprinted without change 2 December 1991 Reprinted without change 2 December 1991 Reprinted without change Reprinted without change 2 December 1991 2 December 1991 Reprinted withoutchange Reprinted withoutchange 2 December 1991 2 December 1991 Reprinted without change 2 December 1991 2 December 1991 2 December 1991 2 December 1991 2 December 1991 Reprinted withoutchange Reprinted without change 2 December 1991 2 December 1991 2 December 1991 Reprinted withoutchange 2 December 1991
2 December 1991
2 December 1991 2 December 1991
2 December 1991 2 December 1991 2 December 1991 2 December 1991 2 December 1991 2 December 1991 2 December 1991
2 December 1991
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MIL-HDBK-2L7F N O T I C E L R E
9399970 O076089
MIL-HDBK-217F NOTICE 1
2.
3.
of Contents.
Holders of MIL-HDBK-217F will verify that page changes and additions indicated have been entered. The notice pages will be retained as a check sheet. The issuance, together with appended pages, is a separate publication. Each notice is to be retained by stocking points until the military handbook is revised or canceled. Preparing Activity: Air Force 17
Custodians: Army - CR Navy - EC Air Force - 17 Review Activities: Army MI, AV, ER Navy SH, AS, OS Air Force - 11, 13, 14, 15, 18, 19,99
User Activities: Army - AT, ME, GL Navy - CG, MC,YD, TD Air Force 85
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H I L - H D B K - 2 1C 7N H FO 6 TICE
9 9 9 9 7 7 0 O L 7 3 O L 7 086
MIL-HDBK-217F
1. This standardization handbook was developed by the Department o f Defense with the assistance of the military departments, federal agencies, and industry.
2. Everyefforthas
been made toreflectthelatestinformationonreliability prediction procedures. It is the intent to review this handbook periodically to ensure its completeness and currency.
3. Beneficial comments (recommendations, additions, deletions) and any pertinentdata whichmay be of useinimprovingthis document should be addressed to: RomeLaboratory/ERSR,Attn:Seymour F. Morris, 525Brooks Rd., Griffiss AFB, NY 13441-4505, by using the self-addressed Standardization DocumentImprovement Proposal (DD Form 1426) appearing at the end of this document or by letter.
II
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NIL-HDBK-217F
C H G NOTICE 2
9999970 O L 9 3 O L B TL2
MIL-HDBK-217F
TABLE SECTION 1. 1 1.2 1.3
1:
OF CONTENTS
1-1 1-1 1-1 2-1 3-1 3-1 3-2 3-2 4-1 5-1 5-3 5-4 5-7 5-8 5-9 5-10 5-11 5-13 5-14 5-15 5-17 5-18 5-20 6-1 6-2 6-4 6-6 6-8 6-9 6-10 6-12 6-14 6-16 6-17 6-19 6-20 6-21 6-23 6-25
SCOPE Purpose................................................................................................................. Application ............................................................................................................. Computerized Reliability Prediction ......................................................................... REFERENCE DOCUMENTS
.......................................................................
3: INTRODUCTION Reliability Engineering ............................................................................................ TheRole of Reliability Prediction.............................................................................. Limitations of Reliability Predictions.......................................................................... Part Stress Analysis Prediction ................................................................................
SECTION 4:
SECTION 6.0 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.1 1 6.1 2 6.1 3 6.1 4 6.15
6: DISCRETE SEMICONDUCTORS Discrete Semiconductors. Introduction.................................................................... Diodes. Low Frequency.......................................................................................... Diodes. High Frequency (Microwave. RF) ................................................................. Transistors. Low Frequency. Bipolar ........................................................................ Transistors. Low Frequency. Si FET......................................................................... Transistors, Unijunction ........................................................................................... Transistors, Low Noise, High Frequency, Bipolar ...................................................... Transistors, High Power, High Frequency, Bipolar ..................................................... Transistors, High Frequency, GaAs FET ................................................................... Transistors, High Frequency, Si FET ........................................................................ Thyristors andSCRs ............................................................................................... Optoelectronics, Detectors, Isolators, Emitters ......................................................... Optoelectronics, Alphanumeric Displays.................................................................. Optoelectronics, Laser Diode.................................................................................. TJ Determination.................................................................................................... Example.................................................................................................................
...
111
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SECTION 5: MICROCIRCUITS. INTRODUCTION ........................................................... 5.1 Gate/Logic Arrays and Microprocessors .................................................................... 5.2 Memories ............................................................................................................... 5.3 VHSlCNHSlC Like .................................................................................................. 5.4 GaAs MMlCandDigitalDevices ................................................................................ 5.5 Hybrids .................................................................................................................. 5.6 SAW Devices ......................................................................................................... 5.7 Magnetic Bubble Memories ..................................................................................... 5.8 X.T Table for All ........................................................................................................ 5.9 C2TableforAll ....................................................................................................... 5.1O XE, xL and X.Q Tables for All .................................................................................... 5.1 1 TJDetermination. (All ExceptHybrids) ...................................................................... 5.1 2TJ Determination,(ForHybrids) ................................................................................ 5.13 Examples ...............................................................................................................
MIL-HDBK-217F
CHG N O T I C E 2
MIL-HDBK-217F NOTICE 2
TABLE OF CONTENTS SECTION 7.1 7.2 7.3
7: TUBES AllTypesExcept TWT and Magnetron .................................................................... Traveling Wave ....................................................................................................... Magnetron.............................................................................................................
SECTION 8: LASERS 8.0 Introduction........................................................................................................... 8.1 Helium and Argon .................................................................................................. 8.2 Carbon Dioxide. Sealed ......................................................................................... 8.3 Carbon Dioxide. Flowing ....................................................................................... 8.4 Solid State. ND:YAG and Ruby Rod ...................................................................... SECTION 9: RESISTORS 9.1 Resistors ............................................................................................................... SECTION 10: CAPACITORS 10.1 Capacitors ............................................................................................................. 10.2 Capacitors. Example .............................................................................................. SECTION 11.1 11.2 11.3
8-2 8-3 8-4 8-5 9-1 10-1 10-6 11-1 11-3 11-4 12-1 12-4 12-5 13-1 13-3 14-1 14-2
15-1 15-3
11 : INDUCTIVE DEVICES Transformers ......................................................................................................... Coils ..................................................................................................................... Determination of Hot Spot Temperature ................................................................
SECTION 12: ROTATING DEVICES 12.1 Motors .................................................................................................................. 12.2 Synchros and Resolvers ........................................................................................ 12.3 Elapsed Time Meters .............................................................................................. SECTION 13: RELAYS 13.1 Mechanical............................................................................................................. 13.2 SolidStateandTimeDelay ..................................................................................... SECTION 14: SWITCHES 14.1 Switches................................................................................................................ 14.2 Circuit Breakers ..................................................................................................... SECTION 15: CONNECTORS 15.1 Connectors. General .............................................................................................. 15.2 Connectors, Sockets ............................................................................................. SECTION 16: INTERCONNECTION ASSEMBLIES 16.1InterconnectionAssemblieswithPlatedThroughHoles 16.2 Interconnection Assemblies, Surface Mount Technology
..........................................
.........................................
SECTION 17: CONNECTIONS 17.1 Connections .......................................................................................................... SECTION 18: METERS 18.1 Meters. Panel ......................................................................................................... SECTION 19: QUARTZ CRYSTALS 19.1 Quartz Crystals ......................................................................................................
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CHG N O T I C E 2
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MIL-HDBK-217F NOTICE 2
TABLE OF CONTENTS SECTION 20: LAMPS 20.1 Lamps................................................................................................................... SECTION 21 : ELECTRONIC FILTERS 21 .1 Electronic Filters. Non-Tunable................................................................................ SECTION 22: FUSES 22.1 Fuses ................................................................................................................... SECTION 23: MISCELLANEOUS PARTS 23.1 Miscellaneous Parts ................................................................................................ APPENDIX A: APPENDIX B: APPENDIX C: PARTS COUNT RELIABILITY PREDICTION.......................................... VHSICNHSIC-LIKE AND VLSl CMOS (DETAILED MODEL) .............. BIBLIOGRAPHY ......................................................................................... LIST OF TABLES
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B-1
c-1
Table 3-1 : Table 3-2: Table 4-1 : Table 6-1 : Table 6-2:
Parts with Multi-Level Quality Specifications ........................................................ Environmental Symbol and Description .............................................................. Reliability Analysis Checklist ............................................................................. DefaultCaseTemperaturesfor All Environments (C) .......................................... Approximate Thermal Resistance for Semiconductor Devices ................................................................................ in Various Package Sizes
LIST OF FIGURES
Cross Sectional View of a Hybrid with a Single Multi-Layered Substrate ................ Examples of ActiveOpticalSurfaces ..................................................................
5-18 8-1
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MIL-HDBK-217F
CHG N O T I C E 2
= 7799770
O377022 443
MIL-HDBK-217F NOTICE 2
FOREWORD
1.0 THIS HANDBOOK I S FOR GUIDANCE ONLY. THIS HANDBOOK SHALL NOT BE CITED AS REQUIREMENT. A IF IT IS, THE CONTRACTOR DOES NOT HAVE TO COMPLY.
MIL-HDBK-217F, Notice 2 provides thefollowingchangesbasedupon study (see Ref. 37 listed in Appendix C):
a recentlycompleted
Updated failure ratemodelsfortransformers,coils,motors,relays,switches,circuitbreakers, connectors, printed circuit boards (with and without surface mount technology) and connections. Anewmodel to addresssurfacemountedtechnologysolderconnections.
9
ArevisedTravelingWaveTubemodelbasedupondatasuppliedby the ElectronicIndustries Association Microwave Tube Division. This further lowers the calculated failure rates beyond the earlier modifications made in the base document (MIL-HDBK-217F, 2 December 1991). Revised the Fast Recovery Power reevaluation of Ref. 28. Rectifier base failure rate downward based on a
3.O MIL-HDBK-217F, (base document), (2 December 1991) provided the following changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C):
1. New failure rate prediction modelsare provided for the following nine major classes of microcircuits: Monolithic Bipolar Digital and Linear Gate/Logic Array Devices Monolithic MOS Digital and Linear Gate/Logic Array Devices Monolithic Bipolar and MOS Digital Microprocessor Devices (including Controllers) Monolithic Bipolar and MOS Memory Devices Monolithic GaAs Digital Devices Monolithic GaAs MMlC Devices Hybrid Microcircuits Magnetic Bubble Memories Surface Acoustic Wave Devices
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The 2 December1991 revision provided new prediction modelsfor bipolar andMOS 60,000, linear microcircuits with up to 3000 microcircuits with gate counts up to transistors, bipolar and MOS digital microprocessorandco-processorsup to 32 bits, to 1 million bits, GaAs monolithic microwave integrated circuits memory devices with up ("ICs) with up to 1,000 active elements, and GaAs digital ICs with up to 10,000 transistors. The C, factors have been extensively revised to reflect new technology devices with improved reliability, and the activation energies representing the temperature sensitivity of the dice ( 7 ~ have ~ ) been changed for MOS devices and for memories. The
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MIL-HDBK-217F
CHG N O T I C E 2
W 9999970 0397023 3 8 T
MIL-HDBK-217F NOTICE 2
FOREWORD
C2 factor remains unchanged from the previous Handbook version, but includes pin grid arrays and surface mount packages using the same model as hermetic, solder-sealed dual in-line packages. New values have been included for the quality factor (xa), the learning factor (xL), andthe environmentalfactor (xE). Themodel for hybrid microcircuitshas been revised to be simpler to use, to delete the temperature dependence of the seal and interconnectfailurerate contributions, and to provide a method of calculatingchip junction temperatures.
2. A newmodel for Very High Speed IntegratedCircuits(VHSICNHSICLike) Large Scale Integration (VLSI) devices (gate counts above 60,000).
andVery
on datasupplied
by theElectronic
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MIL-HDBK-217F C H G N O T I C E 2
MIL-HDBK-217F NOTICE 2
1.1 Purpose This handbook i s for guidance only and shall not be cited as a contractor does not have to comply (see Page 1-2). Th e requirement. If it is, the purpose of this handbook is to establish and maintain consistent and uniform methods for estimating the inherent reliability (Le., the reliability of amaturedesign)of military electronic equipment and systems. It provides a common basis for reliability predictions during acquisition programs for military electronic systems and equipment. It also establishes a common basis for comparing and evaluating reliability predictions of related or competitive designs. The handbook is intended to be used as a tool to increase the reliability of the equipment being designed. 1.2 Application Thishandbookcontains two methods of reliability prediction - "Part Stress Analysis" in Sections 5 through 23 and "Parts Count" in Appendix A. These methods vary in degree of information needed to apply them. The Part Stress Analysis Method requires a greater amount of detailed information and is applicable during the later design phase when actual hardware and circuits are beingdesigned.The Parts CountMethodrequiresless information, generally part quantities, quality level, and the application environment. This method is applicable during the early design phase andduringproposal formulation. In general,thePartsCount Method will usually result in amore conservative estimate (Le., higher failure rate) of system reliability than the Parts Stress Method.
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MIL-HDBK-217F C H 6 N O T I C E 2
9 9 9 9 9 7 0 0177025 1 5 2
MIL-HDBK-217F NOTICE 2
1.0
SCOPE
FEB 2 8 1995
SUBJECT:
Prior to sending the subject noticet o the M D Single Stock Point f o r printing and distribution, the following additions=st be made: Across the cover in BIG BOLD BLJu3K LETpisRs ALL CAPS: Insert 'TRIS HANDBOOK IS FOR GUIDANCE =Y. DO NOT CITE T H I S DOCUMENT As A REQmREMENT.. In the POREWORD (Page vii of Notice 2 ) . paragraph 1.0: A d d 'THIS HANDBOOK IS FOR GUIDANCE ONLY. TEacS HANDBOOK SHWl NOT BE CITED AS A REQVIREMENT. IF IT I S , TRE RDOES NOT HAVE M COMPLY. Add an entry f o r the SCOPE, paragraph 1.1 (Purpose): 'This handbook is f o r guidance only and shall not be cited as a requirement. If it is, the contractor &es not have to comply.
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MIL-HDBK-237F
CH6 N O T I C E 2
MIL-HDBK-217F NOTICE 2
2 . 0 REFERENCE DOCUMENTS
This handbook cites some specifications which have been cancelled or which describe devices that are not to be used for new design. This information is necessary because someof these devices are used in so-called "off-the-shelf"equipment which the Department of Defense purchases. The documents cited in this section are for guidance and information.
SPECIFICATION
MIL-C-5
SECTION #
10.1
TITLE Capacitors, Fixed, Mica Dielectric, General Specification for Resistor, Fixed, Composition (Insulated), General Specification for Resistor, Variable, Wirewound (Low Operating Temperature) General Specification for Capacitor, Fixed, Ceramic Dielectric (Temperature Compensating), Established Reliability and Nonestablished Reliability, General Specification for Resistor, Variable, Wirewound (Power Type), General Specification for Capacitor, Fixed, Paper-Dielectric, Direct Current (Hermetically Sealed in Metal Cases), General Specification for Resistor, Fixed, Wirewound (Power Type), General Specification for Transformer and Inductors (Audio, Power, High Power Pulse), General Specification for Capacitor, Fixed Electrolytic (DC, Aluminum, Dry Electrolyte, Polarized), General Specification for
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MIL-R-22 MIL-C-25 MIL-R-26 M I L-T-27 MIL-(2-62 MIL-C-81 MIL-C-92 MIL-R-93 M IL- R-94 MIL-V-95 w-L-111 w-c-375 W-F-1726 W-F-1814 MIL-C-3098 MIL-C-3607 MIL-C-3643
9.1
10.1
Capacitor, Variable, Ceramic Dielectric, General Specification for Capacitor, Variable, Air Dielectric (Trimmer), General Specification for Resistor, Fixed, Wirewound (Accurate), General Specification for Resistor, Variable, Composition, General Specification for Vibrator, Interrupter and Self-Rectifying, General Specification for Lamp, Incandescent Miniature, Tungsten Filament Circuit Breaker, Molded Case, Branch Circuit and Service Fuse, Cartridge, Class H (this covers renewable and nonrenewable) Fuse, Cartridge, High Interrupting Capacity Crystal Unit, Quartz, General Specification for Connector, Coaxial, Radio Frequency, Series Pulse, General Specifications for Connector, Coaxial, Radio Frequency, Series HN and Associated Fittings, General Specification for
2-1
flIL-HDBK-217F
C H G NOTICE 2
9 9 9 9 9 7 0 0397027 T25
MIL-HDBK-217F NOTICE 2
2 .O
REFERENCE DOCUMENTS
MIL-C-3650 MIL-C-3655 MIL-S-3786 MIL-S-3950 MIL-C-3965 MIL-(3-5015 MIL-F-5372 MIL-S-5594 MIL-R-5757 MIL-R-6106 MIL-L-6363 MIL-S-8805 MIL-S-8834 MIL-S-8932 MIL-S-9395 MIL-S-9419 MIL-"10304 MIL-R-10509 MIL-C-10950 MIL-C-11015 MIL-C-11272
15.1 15.1 14.3 14.1 10.1 15.1 22.1 14.1 13.1 13.1 20.1 14.1,14.2 14.1 14.1 14.1 14.1 18.1 9.1 10.1 10.1 10.1
Connector, Coaxial, Radio Frequency, Series LC Connector, Plug and Receptacle, Electrical (Coaxial Series Twin) and Associated Fittings, General Specification for Switch, Rotary (Circuit Selector, Low-Current (Capacity)), General Specification for Switch, Toggle, Environmentally Sealed, General Specification for Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum, General Specification for Connector, Electrical, Circular Threaded, AN Type, General Specification for Fuse, Current Limiter Type, Aircraft Switches, Toggle, Electrically Held Sealed, General Specification for Relays, Electromagnetic,General Specification for Relay, Electromagnetic (Including Established Reliability(ER) Types), General Specification for Lamp, Incandescent, Aircraft Service, General Specification for Switches and Switch Assemblies, Sensitive and Push (Snap Action), General Specification for Switches, Toggle, Positive Break, General Specification for Switches, Pressure, Aircraft, General Specification for Switches, Pressure, (Absolute, Gage, and Differential), General Specification for Switch, Toggle, Momentary Four Position On, Center Off, General Specification for Meter, Electrical Indicating, Panel Type, Ruggedized, General Specification for Resistor, Fixed Film (High Reliability), General Specification for Capacitor, Fixed, Mica Dielectric, Button Style, General Specification for Capacitor, Fixed, Ceramic Dielectric (General Purpose), General Specification for Capacitor, Fixed, Glass Dielectric,General Specification for
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MIL-HDBK-217F NOTICE 2
~~~~
2 . O REFERENCE
DOCUMENTS
MIL-C-I 1693
10.1
Capacitor, Feed Through, Radio Intederence Reduction AC and DC, (Hermetically Sealedin Metal Cases) Established and Nonestablished Reliability, General Specification for Resistor, Fixed, Film (Power Type), General Specification for Switch, Pressure Switches, Thermostatic Sockets and Accessories for Plug-ln Electronic Components, General Specification for Capacitor, By-pass, Radio - Interference Reduction, Paper Dielectric, AC and DC, (Hermetically Sealed in Metallic Cases), General Specification for Resistor, Variable, Wirewound. Precision, General Specification for Switch, Sensitive: 30 Volts Direct Current Maximum, Waterproof Circuit Breakers, Manual and Automatic (28 Volts DG) Switches, Rotary: 28 Volt DC Relays, Electromagnetic 24 VoltDC Switches, Toggle: 28 Volt DC Capacitor, Variable (Piston Type; Tubular Trimmer), General Specification for Fuse, Instrument, Power and Telephone Switches, Rotary, Snap Action and DetenVSpring Return Action, General Specification for Coils, Electrical, Fixed and Variable, Radio Frequency, General Specification for Couplers, Directional, General Specification for Filters and Capacitors, Radio Frequency Interference, General Specification for Switches, Rotary, Enclosed Capacitor, Fixed, Metallized (Paper, Paper Plastic or Plastic Film) Dielectric, Direct Current (Hermetically Sealed in Metal Cases), General Specification for Filter, High Pass, Low Pass, Band Pass, Band Suppression and Dual Functioning, General Specification for
MIL-R-12934 M IL-S-13484 MIL-C-13516 MIL-S-13623 MIL-R-13718 MIL-S-13735 MIL-G14409 MIL-F-15160 MIL-S-15291 MIL-C15305 MIL-GI5370 MIL-F-15733 MIL-S-15743 MIL-G18312
MIL-F-18327
21 .i
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CH6 N O T I C E 2
H 9999970 0197029 8 T 8
MIL-HDBK-217F NOTICE 2
2 . O REFERENCE DOCUMENTS
MIL-R-18546 MIL-S-19500 MIL-R-19523 MIL-R-19648 MIL-C-19978 9.1 6.0 13.1 13.1
10.1
Resistor, Fixed, Wirewound (Power Type, Chassis Mounted), General Specification for Semiconductor Device, General Specification for Relays, Control Relay, Time, Delay, Thermal, General Specification for
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Capacitor, Fixed Plastic (or Paper-Plastic) Dielectric (Hermetically Sealed in Metal, Ceramic or Glass Cases), Established and Nonestablished Reliability, General Specification for Transformer, Pulse, Low Power, General Specification for Connector, Electrical, Printed Wiring Board, General Purpose, General Specification for Switches, Liquid Level, General Specification for Connectors, Plug and Receptable- Electrical Rectangular, Polarized Shell, Miniature Type Resistor, Variable, Nonwirewound (Adjustment Types), General Specification for Switches, Sensitive Resistor, Fixed, Film, Insulated, General Specification for Switches, Code Indicating Wheel (Printed Circuit), (Thumbwheel, In-line and Pushbutton), General Specification for Switches, Pushbutton, Illuminated, General Specification for Connectors, Plugs and Receptacles, Electrical, Water-Proof, Quick Disconnect, Heavy Duty Type, General Specification for Capacitors, Fixed or Variable, Vacuum or Gas Dielectric, General Specification for Capacitor, Fixed, Glass Dielectric, Established Reliability, General Specification for Resistor, Variable, Nonwirewound, General Specification for Fuse, Cartridge, Instrument Type, General Specification for Resistor, Thermal, (Thermally Sensitive Resistor), Insulated, General Specification for Connector, Plug-Receptacle, Electrical, Hexagonal, 9 Contacts, Female, 7.5 Amps Connector, Plug-Receptacle, Electrical, Hexagonal, 9 Contacts, Male, 7.5 Amps
MIL-T-21038 MIL-C-21097 MIL-S-21277 MIL-C-21617 MIL-R-22097 MIL-S-22614 MIL-R-22684 MIL-S-22710 MIL-S-22885 MIL-C-22992 MIL-C23183 MIL-C-23269 MIL-R-23285 MIL-F-23419 MIL-T-23648 MS-24055 MS-24056
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Connectors, Electric, Rectangular, Nonenvironmental, Miniature, Polarized Shell, Rack and Panel, General Specification for Switches, Multistation, Pushbutton (Illuminated and Non-Illuminated), General Specificationfor Connector, Electrical, Miniature, Coaxial, Environment Resistant Type, General Specification for Connector, Electrical (Circular, Miniature, Quick Disconnect, Environment Resisting), Receptacles and Plugs, General Specification for Connectors, General Purpose, Electrical, Miniature, Circular, Environment Resisting,General Specification for Resistor, Variable, Wirewound, Nonprecision, General Specification for Connectors, Electrical, Rectangular, Removable Contact, Formed Blade, Fork Type (For Rack and Panel and Other Applications), General Specification for Connector, Plug and Receptacle, Rectangular, Rack and Panel, Solder Type and Crimp Type Contacts, General Specification for Relay, Solid State, General Specification for
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Connectors, Plug and Receptacle, Electric Rectangular, High Density, Polarized Center Jackscrew, General Specification for, Inactive for New Designs Connector, Electrical, Circular Threaded, High Density, High Shock Shipboard, Class D, General Specification for Microcircuits, General Specification for Sockets, Chip Carrier, Ceramic,General Specification for Hybrid Microcircuits, General Specification for Integrated Circuits (Microcircuits) Manufacturing,General Specification for Connector, Electrical, Circular, Miniature, High Density, Quick Disconnect, (Bayonet, Threaded, and Breech Coupling) Environment Resistant, Removable Crimp and Hermetic Solder Contacts, General Specification for Capacitor, Fixed, Mica-Dielectric, Established Reliability, General Specification for Resistor, Variable, Wirewound, Semi-Precision, General Specification for Capacitor, Fixed, Electrolytic, (Solid Electrolyte), Tantalum, Established Reliability, General Specification for
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MIL-R-39005 MIL-G39006 MIL-R-39007 MIL-R-39008 MIL-R-39009 MIL-G3901O MIL-G39012 MIL-G39014 MIL-R-39015 MIL-R-3901 6 MIL-R-39017 MIL-G39018 MIL-C-39019
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Resistor, Fixed, Wirewound (Accurate), Established Reliability, General Specification for Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte) Tantalum Established Reliability, General Specification for Resistor, Fixed, Wirewound (Power Type), Established Reliability, General Specification for Resistor, Fixed, Composition (Insulated), Established Reliability, General Specification for Resistor, Fixed, Wirewound (Power Type, Chassis Mounted) Established Reliability, General Specification for Coils, Electrical, Fixed, Radio Frequency, Molded, Established Reliability, General Specification for Connector, Coaxial, Radio Frequency, General Specification for Capacitor, Fixed, Ceramic Dielectric (General Purpose), Established Reliability, General Specification for Resistor, Variable, Wirewound (Lead Screw Actuated), Established Reliability, General Specification for Relay, Electromagnetic, Established Reliability, General Specification for Resistor, Fixed, Film (Insulated), Established Reliability, General Specification for Capacitor, Fixed, Electrolytic (Aluminum Oxide), Established Reliability and Nonestablished Reliability, General Specification for Circuit Breakers, Magnetic, Low Power, Sealed, Trip-Free, General Specification for
or Plastic Film Capacitors, Fixed, Metallized, Paper-Plastic Film Dielectric, Direct and Alternating Current (Hermetically Sealed in Metal or Ceramic Cases), Established Reliability, General Specification for
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Resistor, Variable, Nonwirewound, Precision, General Specification for Resistor, Variable, Nonwirewound (Adjustment Type), Established Reliability, General Specification for Switch, Rotary Connectors, Plugs and Receptacle, Electrical Triaxial, Radio Frequency, General Specification for Connectors, Plug and Receptacle, Telephone, Electrical, Subassembly and Accessories and Contact Assembly, Electrical, General Specification for Printed Wiring Board, General Specification for Resistor, Fixed, Film, Established Reliability, General Specification for
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14.1 10.1
MIL-G55629 MIL-T-55631 MIL-G55681 MIL-G81511 MIL-S-81551 MIL-C-81659 MIL-S-82359 MIL-G83383 MIL-R-83401 MIL-C83421
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MIL-C-83515 Connectors, 15.1 Telecommunication, Polarized Shell, for MIL-R-83516 Relays, 13.1 Reed, Dry, MIL-C-83517 General Specification for 15.1 Connectors, Coaxial, Radio Frequency Coaxial, for Strip Transmission Line, General Specification for
General Specification
or Microstrip
MIL-R-83520 Relays, 13.1 Electromechanical, General Purpose, Non-Hermetically Sealed, Plastic Enclosure (Dust Cover),General Specification for MIL-C-83527 15.1 Connectors, Receptacle, Plug and Electrical, Rectangular Multiple Insert Type, Rackto Panel, Environment Resisting,15OOC Total Continuous Operating Temperature, General Specification for MIL-R-83536 Relays, 13.1 Electromagnetic, Established Reliability, for MIL-C-83723 Connector, 15.1 MIL-R-83725 Relay, Vacuum, 13.1 General Specification for MIL-R-83726 13.1, 13.2, Relays, 13.3 14.1 MIL-S-83731 MIL-G83733 15.1 Hybrid and Solid State, Time Delay, General Specification for Electrical (Circular Environment Resisting), Receptacles and Plugs, General Specification for General Specification
Switch, Toggle, Unsealed and Sealed Toggle, General Specification for Connector, Electrical, Miniature, Rectangular Type, Rack to Panel, Environment Resisting, 200C Total Continuous Operating Temperature, General Specification for Plug-ln Electronic Components, Dual-ln-Line (DIPS) and Single-ln-Line Packages (SIPS), General Specification for
MIL-C-85028 Connector, 15.1 Electrical, Rectangular, Individual Contact Sealing, Polarized Center Jackscrew, General Specification for STANDARD MIL-STD-756 Reliability Prediction Modeling and MIL-STD-883 Test Methods Procedures and TITLE
for Microelectronics
MIL-STD-975 NASA Standard Electrical, Electronic and Electromechanical (EEE) Parts List MIL-STD-1547 Electronic Parts, Materials and Processes for Space and Launch Vehicles, Technical Requirements for
Copies of specifications and standards required by contractors in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting officer. Single copies are also available(without charge) upon written requestto:
Standardization Document Order Desk, 700 Robins Ave., Building 4, Section D, Philadelphia, PA 19111-5094, (215) 697-2667
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INTRODUCTION
3. I Rellablllty Englneerlng Reliability is currentlyrecognized as an essential need in military electronic systems. It is looked upon as a means for reducing costs from the factory, where rework of defective components adds a non-productive overhead expense, to the field, where repair costs include but also transportation and storage. More importantly, reliability directly impacts not only parts and labor force effectiveness, measured in terms of availability or sortie rates, and determines the size of the "logistics tail"inhibiting force utilization.
The achievement of reliability is the function of reliability engineering. Every aspect of an electronic system, from the purity of materials used in its component devices to the operator's interface, has an impact on reliability. Reliability engineering must,therefore,be applied throughout the system's development in a diligent and timely fashion, and integrated with other engineering disciplines. A variety of reliability engineering fools have been developed. This handbook provides the models tool, reliability prediction. supporting a basic
3.2
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The Role of Rellablllty Predlctlon Reliability prediction provides the quantitativebaseline needed to assess progress in reliability engineering. A prediction made of a proposed design may be used in several ways.
A characteristic of Computer Aided Design is the ability to rapidly generate alternative solutions to a particular problem. Reliability predictions for each design alternative provide one measure of relative worth of the available options. which, combined with other considerations, will aid in selecting the best
Once a designis selected, the reliability prediction may be used as a guide to improvement by showing to failure. If the part stress analysis method is used, it may also reveal other fruitful the highest contributors areas for change (e.g., over stressed parts). The impactof proposed design changes on reliability canbe determined only by comparing the reliability predictions of the existing and proposed designs.
to -maintain an acceptable reliability level under environmental extremes may be The ability of the design assessed through reliability predictions, The predictions may be used to evaluate the need for environmental control systems.
The effects of complexity on the probability of mission success can be evaluated through reliability predictions. The need for redundant or back-up systems may be determined with the aid of reliability predictions. A tradeoff of redundancy against other reliability enhancing techniques (e.g.: more cooling, higher part quality, etc.)must be based on reliability predictions coupled with other pertinent cost, space limitations, etc. considerations such as The prediction will also help evaluate the significance of reported failures. For example, ifseveral failures of one type or component occur in a system, the predicted failure rate can be used to determine whether the number of failures is commensurate with the number of components usedin the system, or, that it indicates a problem area. Finally, reliability predictions are useful to various other engineering analyses.As examples, the location of built-in-test circuitry should be influenced by the predicted failure rates of the circuitry monitored, and maintenance strategy plannerscan make use of the relative probabilityof a failure's location, based on predictions, to minimize downtime. Reliability predictions are also used to evaluate the probabilities of failure events described in a failure modes, effects and criiticality analysis (FMECAs).
31
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3.3
Limitations of ReliabilityPredlctions This handbook provides a common basis for reliability predictions, based on analysisof the best available data at the timeof issue. It is intended to make reliability prediction as good a tool as possible. However, like anytool, reliability predictionmust be used intelligently, with due consideration of its limitations.
The first limitation is that the failure rate models are point estimates which are based on available data. Hence, they are valid for the conditions under which the data was obtained, and for the devices covered. Some extrapolation during model development is possible, but the inherently empirical nature of the models can be severely restrictive. For example, none of the models in this handbook predict nuclear survivability or the effects of ionizing radiation. Even when used in similar environments, the differences between system applications can be significant. Predicted and achieved reliability have always been closer for ground electronic systems than for avionic systems, because the environmental stresses vary less from system to system on the ground and hence the field conditions are in general closerto the environment under which the data was collected for the prediction model. However, failure rates are also impactedby operational scenarios,operator characteristics, maintenarice practices, measurement techniques and differencesin definition of failure. Hence, a reliability prediction should never be assumed to represent the expected field reliability as measured by the user (.e., Mean-Time-Between-Maintenance, Mean-Time-Between-Removals, etc.). This does not negate its value as a reliability engineering tool; note that none of the applications to match the field measurement. discussed above requires the predicted reliability Electronic technology is noted for its dynamic nature. New types of devices and new processes are continually introduced, compounding the difficulties of predicting reliability. Evolutionary changes may be handled by extrapolation from the existing models; revolutionary changes may defy analysis.
f reliability predictions is the mechanics of the process. The part stress analysis Another limitation o method requires a significant amount of design detail. This naturally imposes a time and cost penalty. More significantly, many of the details are not available in the early design stages. For this 'reason this handbook contains both the pad stress analysismethod (Sections 5 through 23)and a simpler parts count in early design and bid formulation stages. method (AppendixA) which can be used
Finally, a basic limitation of reliability prediction is its dependence on correct application by the user. Those who correctly apply the models and use the information ina conscientious reliability programwill find the prediction a useful tool. Those who view the prediction only asa number which must exceed a specified value can usually find a way to achieve their goal without any impact on the system.
3.4
3.4.1 Applicability This method is applicable when most of the design is completed and a detailed parts list including part stresses is available. It can also be used during later design phases for reliability a broad trade-offs vs. part selection and stresses. Sections 5 through 23 contain failure rate models for variety of parts used in electronic equipment. The parts are grouped by major categories and, where not covered appropriate, are subgrouped within categories. For mechanical and electromechanical parts to Bibliography items20 and 36 (Appendix C), by this Handbook, refer
The failure rates presented apply to equipment under normal operating conditions, .e., with power on and of any of the base failure rate performing its intended functions in its intended environment. Extrapolation models beyond the tabulated values such as high or sub-zero temperature, electrical stress values above 1.0, or extrapolation of any associated model modifiers is completely invalid. Base failure rates can be O to 1 using the underlying equations. interpolated between electrical stress values from The general procedure for determining a board level (or system level) failure rate is to sum individually calculated failure ratesfor each component. This summation is then added to a failure rate for the circuit board (which includes the effects of soldering parts to it) using Section 16, Interconnection Assemblies.
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For parts or wires soldered together (e.g.,'a jumper wire between two parts), the connections model is accounted for appearing in Section 17 is used. Finally, the effectsof connecting circuit boards together by adding in a failure rate for each connector (Section 15, Connectors). The wire between connectors is rate. For various serviceuse profiles, duty cycles and redundancies the assumed to have a zero failure procedures describedin MIL-STD-756, Reliability Modeling and Prediction, shouldbe used to determine an effective system level failure rate.
3.4.2 Part Quallty .The quality of a part hasa direct effecton the part failure rate and appears in the part models as a factor, ZQ. Many parts are coveredby specifications that have several quality levels, hence, the part models have values of na that are keyedto these quality levels. Such parts with their quality designators are shown in Table 3-1. The detailed requirements for these levels are clearly defined in the applicable specification, except for microcircuits. Microcircuits have quality levels which are dependent on the number of MIL-STD-883 screens(or equivalent) to which they are subjected,
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Table 3-1:
Microcircuits Discrete Semiconductors Capacitors, Established Reliability (ER) Resistors, Established Reliability (ER) Coils, Molded, R.F., Reliability (ER) Relays, Established Reliability (ER)
SI R, P, M
Some parts are covered by older specifications, usually referred to as Nonestablished Reliability (Non-ER),. two quality levels designated as that do not have multi-levels of quality. These part models generally have "MIL-SPEC.",and"Lower". If the part i s procured in complete accordance with the applicable If any requirements are waived, or if a specification, the ZQ value for MIL-SPEC should be used. ZQ value for Lower should be used. commercial part is procured, the The foregoing discussion involves the "as procured" part quality. Poor equipment design, production, of the higher quality parts requires a total and testing facilities can degrade part quality. The use equipment design and quality control process commensurate with the high part quality. It would make little sense to procure high quality parts only to have the equipment production procedures damage the parts or introduce latent defects. Total equipment program descriptions as they might vary with different part qualitymixes is beyond thescope of this Handbook. Reliability managementand quality control procedures are described in other DoD standards and publications. Nevertheless, when a proposed equipment development is pushing the state-of-the-art and has a high reliability requirement W equipment program should be given careful scrutiny and not just necessitating high quality parts, the
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the parts quality. Otherwise, the low failure ratesas predicted by the models forhigh quality parts will not be realized.
3.4.3 Use Environment All part reliability models include the effects of environmental stresses through the environmental factor, K E , except for the effects of ionizing radiation. The descriptions of these environmentsare shown in Table 3-2.The zE factor is quantified within each part failure rate model. These environments encompass the major areas of equipment use. Some equipment will experience more than one environment during its normal use, e.g., equipment in spacecraft. In such a case, the reliability analysis should be segmented, namely, missile launch (ML) conditions during boost into and return from orbit, and space flight(SF) while in orbit.
Table 3-2: Environmental Symbol and Description
~~
~~
Ground, Benign
GB
Nonmobile, temperature and humidity controlled environments readily accessible to maintenance; includes laboratory instruments and test equipment, medical electronic equipment, business and scientific computer complexes, and missiles and support equipment in ground silos, Moderately controlled environments such as installation in permanent racks with adequate cooling air and possible installation in unheated of air buildings; includes permanent installation traff c control radar and communications facilities.
. .
Ground, Fixed
GF
Ground, Mobile
Equipment installed on wheeled or tracked vehicles and equipment manually transported; includes tactical missile ground support equipment, mobile communication equipment, tactical fire direction systems, handheld cammunications equipment, laser designations and range finders. Includes sheltered or below deck conditions on surface ships and equipment installed in submarines. Unprotected surface shipborne equipment exposed to weather conditions and equipment immersed in salt water. Includes sonar on hydrofoil equipment and equipment installed vessels.
Naval, Sheltered
Naval, Unsheltered
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INTRODUCTION
Environment
Description
Airborne,lnhabited, Cargo
AIC AIT
Typical conditions in cargo compartments which can be occupied by an aircrew. Environment extremes of pressure, temperature, shock and vibration are minimal. Examples include long mission aircraft such as the C130, C5,B52, and C141. This category also applies to inhabited areas in lower performance smaller aircraft such as the T38. Same asAIC but installed on high performance aircraft such as fighters and interceptors. 6, F111, FIA 18 Examples include the F15, F1 and A l O aircraft. Environmentally uncontrolled areas which cannot be inhabited by an aircrew during flight. Environmental extremes,of pressure, temperature and shock may be severe. Examples include uninhabited areas of long mission aircraft such as the C130, CS, B52 and C141, This category also applies to uninhabited areaof lower performance smaller aircraft such as the T38. Same as AUC but installed on high performance aircraft such as fighters and interceptors. Examples include the F15, F16, F1 11 and A10 aircraft. Equipment installed on helicopters. Applies to both internally and externally mounted equipment such as laser designators, fire control systems, and communications equipment. Earth orbital. Approaches benign ground conditions. Vehicle neither under powered flight nor in atmospheric reentry; includes satellites and shuttles.
. .
Airborne, Inhabited, Fighter AIF
AIA
AUF
%A
ARW
Space, Flight
SF
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Environment
~~ ~
% Symbol
Description Conditions relatedto powered flight of air breathing missiles, cruise missiles, and missiles in unpowered free flight. Severe conditions relatedto missile launch(air, ground and sea), space vehicle boost into orbit, and vehicle re-entry and landing by parachute. Also applies to solid rocket motor propulsion powered flight, and torpedo and missile launch from submarines. Extremely severe conditions related to cannon launching of 155 mm. and 5 inch guided projectiles. Conditions apply.to the projectile from launch to target impact.
Missile, Flight
MR
M~~
Missile, Launch
ML "SL
* . .
Cannon, Launch
CL
3 . 4 . 4 Part Failure Rate Models Part failure rate models for microelectronic parts are significantly different from those for other parts and are presented entirely in Section 5.0. A typical example of the type of model used for most other part typesis the following one for discrete semiconductors: .
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~~=%XT~AXR~S~C"QXE where:
hp
hb
XE
isthepartfailurerate, is the base failure rate usually expressed by a model relating the influence of electrical and temperature stresseson the part, and the other X factors modify the base failure rate for the category of. environmental application and other parameters that affect the part reliability..
The zE and zQ factors are used in most all models and other IC factors apply onlyto specific models. The applicability of x factorsis identified in each section. The base failure rate (hb) models are presented in each part section along with identification of the applicable model factors. Tables of calculated + . , values are also provided for use in manual calculations. The model equations can, of course, be incorporated into computer programsfor machine processing. The tabulated values of are cut off at the part ratings with regard to temperature and stress, hence, use of parts beyond these cut off points will overstress the part. The use of the hb models in a computer
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program should take the part rating limits into account. The At, equations are mathematically continuous the overstressed regions. beyond the part ratings but such failure rate values are in invalid
All the part models include failure data from both catastrophic and permanent drift failures (ems., a resistor permanently falling out of rated tolerance bounds) and are based upon a constant failure rate, except for of parts into motors which showan increasing failure rate over time. Failures associated with connection circuit assemblies are not included within the part failure rate models. Information on connection reliability is provided in Sections 16 and 17.
3.4.5 Thermal Aspects The use of this prediction methodrequires the determination of the temperatures to which the parts are subjected. Since parts reliability is sensitive to temperature, the thermal analysisof any design should fairly accurately provide the ambient temperatures needed in using the part models. 0 1course, lower temperatures produce better reliability but also can produce increased penalties in terms of added loads on the environmental control system, unless achieved through improved thermal design of the equipment. The thermal analysis should be partof the design process and included in all the trade-off studies covering equipment performance, reliability, weight, volume, 17 and 34 listed in Appendix C may be usedas guides in environmental control systems, etc. References determining component temperatures.
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Table 4-1 provides a general c m t to be used as a gui& for evaluating a reliability prediction report. For completeness, the checklist includes categories for reliability modeling and allocation, which are sometimes delivered as part of a prediction report. It should be noted that the scope of any reliability analysis depends on the specific requirements called out in a statement-of-work (SOW) or system specification. The inclusion of this checklist is not intended to change the scope of these requirements.
Table 4-1: Major Concerns
dODELS
Are all functional elements included in the reliability block diagram /model? Are all modes of operation considered in the mathnmdel?
and redundancy equations are used Do the math model results show that the design Unit failure rates from the detailed part predictions in the system math achieves the reliability requirement? model (See MIL-STD-756, Reliability Prediction and Modeling).
4LLOCATION
Are system reliability requirements allocated (subdivided) to useful levels? Does the allocation process consider complexity, design flexibility, and safety margins? .
Useful levels are defined as: equipment for subcontractors, assemblies for sub-subcontractors, circuit boards for designers. Conservative values are needed to prevent reallocation at every design change.
PREDICTION
Does the sum of the parts equal the value of the moduleor unit? Are environmental conditions and part quality representative the of requirements? Are the circuit and part temperatures defined and do they represent the design? Are equipment, assembly, subassembly and part reliability drivers identified? Are alternate (Non MIL-HDBK-217) failure rates highlighted along with the rationale for their. use? Many predictions neglectto include all the parts producing optimistic results (check for solder connections, connectors, circuit boards). Optimistic quality levels and favorable environmental conditions are often assumed causing optimistic results. Temperature is the biggest driver of part failure rates: low temperature assumptions will &use optimistic results. Identification is neededso that corrective actions for reliability improvement can be considered. Use of alternate failure rates, if deemed necessary, require submission of backup data to provide credencein the values. Each component type should be sampled and failure rates completely reconstructed for accuracy. Prediction methods for advanced technology parts should be carefully evaluated for impact on the module and system.
4- 1
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MIL-HDBK-217F
5.0
MICROCIRCUITS, INTRODUCTION
This section presents failure rate prediction models for the followingten major classes of microelectronic devices:
Section
5.1 MonolithicBipolarDigitalandLinearGate/LogicArrayDevices Monolithic MOS Digital and Linear Gatenogic Array Devices MOS Digital Microprocessor Devices
5.1
5.2 Monolithic Bipolar and MOS Memory Devices 5.3 5.4 5.4 VeryHighSpeedIntegratedCircuit(VHSICNHSIC-LikeandVLSI)CMOSDevices Gates) Monolithic GaAs Digital Devices Monolithic GaAs MMlC Hybrid Microcircuits Surface Acoustic Wave Devices Magnetic Bubble Memories
(> 60K
5.5
5.6 5.7
In the title description of each n&nolithic device type, Bipolar represents all TTL, ASTTL, DTL, ECL, CML, ALSTTL, HlTL, RTL, F, LTTL, STTL, BiCMOS, LSTTL, IIL, 13L and ISL devices. MOS represents all metal-oxide microcircuits, which includes NMOS,PMOS,CMOS and MNOS fabricated on various substrates such as sapphire, polycrystalline or single crystal silicon. The hybrid model is structured to accommodate all of the monolithic chip device types and various complexity levels.
Monolithic memory complexity factors are expressed in the number of bits in accordance with JEDEC STD 21A. This standard, which is used by all government and industry agencies that deal with microcircuit memories, states that memories of 1024 bits and greater shallbe expressed as K bits,. where 1 = K1024 bits. For example, a 16K memory has 16,384 bits, a 64K memory has 65,536 bits and a 1M memory has 1,048,576 bits. Exact numbersof bits arenot used for memories of 1024 bits and greater.
not covered by MIL-M-38510 or MIL-1-38535, use the For devices havingboth linear and digital functions linear model. Line drivers and line receivers are considered linear devices. For linear devices not covered by MIL-M-38510 or MIL-1-38535, use the transistor count from the schematic diagram of the device to determine circuit complexity.
For digital devices not covered by MIL-M-38510 or MIL-1-38535, use the gate count as determined from part an LSI circuit. For the the logic diagram. A J-K or R-S flip flop is equivalent to 6 gates when used as of purpose of this Handbook, a gate is considered to be any one of the following functions: AND, OR, exclusive OR, NAND, NOR and inverter. When alogic diagram is unavailable, use device transistor count to determine gate count using the following expressions:
Technoloav
Bipolar CMOS All other MOS except CMOS
No. Gates= No. Transistors/3.0 No. Gates= No. Transistors/4.0 No. Gates = No. Transistors/3.0
51
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5.0 MICROCIRCUITS, INTRODUCTION
A detailed form of the Section 5.3 VHSICNHSIC-Like model is included as Appendix B to allow more detailed trade-offs to be performed. Reference 30 should be consultedfor more information about this model.
Reference 32 should be consulted for more information about the models appearing in Sections5.1, 5.2, 5.4,5.5, and 5.6. Reference 13 should be consulted for additional information on Section 5.7.
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165
MIL-HDBK-217F NOTICE 2
5.1
MICROCIRCUITS, GATE/LOGIC ARRAYS AND MICROPROCESSORS DESCRIPTION 1. Bipolar Devices, Digital and Linear Gate/Logic Arrays 2. MOS Devices, Digital and Linear Gate/Logic Arrays 3. Field ProgrammableLogicArray(PLA)and Programmable Array Logic (PAL) 4. Microprocessors
Linear No. Transistors 1 101 301 1,001 to 100 to 300 t o 1,000 t o 10,000
C1
.o1 o .o20
.O40
.O60
.O40 .O80
MOS Linear and Digital Gate/Logic Array Die Complexity Failure Rate Cl* Digital No. Gates 100 1 to 101 t o 1,000 1,001 t o 3,000 3,001 t o 10,000 10,001 t o 30,000 t o 60,000 Linear No. Transistors 1 101 301 1,001 to 100 to 300 t o 1,000 t o 10,000 PLA/PAL No. Gates Up to 500 501 to 1,000 2,001 to 5,000 5,001 to 20,000
C1 .o1 o .o20
C1 .o10 .o20
C1
.O40 .O80
.16 .29 30,001
,040
.O60
*NOTE: For CMOS gate counts above 60,000 use the VHSICNHSIC-Like model in Section 5.3 MicroDrocessor Die Complexity Failure Rate - Cl Bipolar
No. Bits
MOS C1
Up to 8 Up to 16 Up to 32
.O60 .12
.14
.28
.56
.24
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5-3
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5.2
MICROCIRCUITS, MEMORIES
DESCRIPTION
1. 2. 3. 4.
ReadOnlyMemories(ROM) Programmable Read Only Memories (PROM) UltravioletEraseablePROMs(UVEPROM) "Flash,"MNOSandFloatingGate Electrically EraseablePROMs(EEPROM).Includes both floating gate tunnel oxide (FLOTOX) and textured polysilicon type EEPROMs 5. StaticRandomAccessMemories (SRAM) 6. Dynamic Random Access Memories (DRAM)
XL
hp = (C1 XT + C2 X E
+ hcyc) XQ
Failures/106 Hours
Die Complexity Failure Rate- C, MOS Memory Size, B (Bits) Up to 16K 16K < B 5 64K < B S 256K cBI1M Bipolar DRAM SRAM (MOS & BiMOS) ROM, SRAM PROM
PROM, UVEPROM, EEPROM, EAPROM
ROM
3 .O0085 .O078 .O01 .O094 .O052 .O025 .O01 .O1 6 .o1 9 .o1 1 .O050 .O38 .O31 .o21 .o1 o .O42 .O75 .O62
I
T+
Flotoxl .O0070 .O01 4 .O034 .O068 .o20 .O49 .1o .14 .20 .68 1.3 2.7 3.4
TexturedPoly2 .O097 .O1 4 .O23 .O33 .O61 .14 .30 .30 .30 .30 .30 .30 .30
A2 Factor for hcyc Calculation Total No. of Programming Cycles Textured-Poly A2 Over EEPROM Life, C Up to 300K
O
u p to 100 100 c c 5 200 200 < C S 500 500cC51K 1K<C13K 3K c C S 7K 7K<CI15K 15K C 5 20K 20K c C I 30K 30K C 5 100K lOOK < C S 200K 200K C 5 400K 400K < C I500K
1.1 2.3
*T
XE,
XQI XL
hcyc(EEPROMS only)
hcyc= O
5-4
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NOTICE 2
MIL-HDBK-217F NOTICE 2
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5.2
MICROCIRCUITS, MEMORIES
A1 B1 A2 B2 NOTES:
k y c=O
&=[AI
B1
+
ed-Pdy Page 5-4 Page 5-6 Page 5-5 Page 5-6 Section 5.10
Flotox
Page 5-4 Page 5-6 Az=O BZ=O Section 5.10
Error Correction Code (ECC) Options: 1. No On-Chip ECC 2. On-Chip Hamming Code 3. Two-Needs-One Redundant Cell Approach i . See Reference24 for modelingoff-chip error detection and correction schemes at the memory system level.
2. If EEPROM type is unknown, assume Flotox.
system life of 10,000 operating hours. For EEPROMs used in systems with significantly longer or shorter expected lifetimes the Al and A2 factors should be multiplied by: System Lifetime Operating Hours 10,000
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5.2
MICROCIRCUITS, MEMORIES
lY
5-6
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9999970 007bOq3 T
MIL-HDBK-217F NOTICE 1
5.3
MICROCIRCUITS, VHSICNHSIC-LIKE
Die Base Failure RatePart Type Logic and Custom Gate Array and Memory
I
0.16 0.24
%T
"Es
Package Type Correction Factor - npT Manufacturing Process Correction Factor ZMFG Manufacturing Process I ~MFG QML or QPL Non QMLor Non QPL
1
Packane Type Pin Grid Array Chip Carrier (Surface Mount Technolo nv) DIP
55 2.0
*
I I i:! I
2.2 4.7 1,O 58 37 24 38 25
X, = Feature Size(microns)
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
(Microns) .8 O 1.o0
xCD=
((-& ) (e-
.4 c A I .7 14 8.9 5.8
P
I
ElectricalOverstress Failure Rate Acne LUV
- ARP
W .
'B P ,0026 ,0027 .O029 .O030 ,0030 .O031 ,0033 .O036 .O043 ,0043 .O047 ,0060
AEOS
.065
.053 .044
0 - 1000
> 1000 - 2000
> 2000 4000
5-7
flIL-HDBK-217F
NOTICE
I RE
9799970 0 0 7 6 0 9 4 1
MIL-HDBK-217F
5.4
MICROCIRCUITS, GaAs MMlC AND DIGITAL DEVICES
DESCRIPTION Gallium Arsenide Microwave Monolithic Integrated Circuit (GaAsMMIC) and GaAs Digital Integrated Circuits using MESFET Transistors and Gold Based Metallization
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Cl
Application MMlC Devices I 100 mW) Low Noise & Low Power ( Driver & High Power (> 100 mW) Unknown
1 to 100
1 . Cl accounts for the following active elements: transistors, diodes.
1.o
Cl
All Other Model Parameters I Refer to Parameter KT
(No. of Elements)
1 to 1000
c2
XE, XLI XQ
5-8
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5.5
DESCRIPTION Hybrid Microcircuits MICROCIRCUITS, HYBRIDS
,X , = [ Z Nc kc J (1 + .2 K E ) KF KQ tL Failures/l O6 HOUE
Nc
=
LC
The general procedure for developing an overall hybrid failure rate is to calculate an individual failure rate for each component type used in the hybrid and then sum them. This summation is then modified to account for the overall hybrid function (zF), screening level (W),and maturity (xL). The hybrid package failure rate is a function of the active component failure modified by the environmental factor(.e., (1 + .2 zE) ). Only the component types listed in the following table are considered to contribute significantly to the overall failure rate of most hybrids. All other component types (e.g., resistors, inductors, etc.) are to have a failure considered to contribute insignificantlyto the overall hybrid failure rate, and are assumed rate of zero. This simplification is valid for most hybrids; however,if the hybrid consistsof mostly passive components then a failure rate should be calculated for these devices. If factoring in other component types, assume KQ = 1, X;E=1 andTA = Hybrid Case Temperature for these calculations. Determination of h, Make These Assumptions When Determining Handbook Section
AC
Discrete Semiconductors
10
XQ
np=
1.
NOTE:
If maximum rated stress fora die is unknown, assume the same as for a discretely package die of the same type. If the same die has several ratings based on the discrete packaged type, assume the lowest rating. Power rating used should be based on case temperature for discrete semiconductors.
F
1.o 1.2 2.6 Microwave,
5.8
21
5-9
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rn
q q q q q 7 0 0397039 7 4 7
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5.6
TCQ
Environmental Factor -
E
"E
"Q
.1o
Environment GB GF
.5
2.0
4.0
4 .O
1 .o
GM
NS
NU
AIC AIF AUC AUF ARW
6.0
5 .O 5 .O
8 .O
8 .O
SF
MF
ML
.50
5 .O
12
CL
220
5-1O
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4.0
MIL-HDBK-217F
5.7 MICROCIRCUITS, MAGNETIC BUBBLE
MEMORIES
The magnetic bubble memory device in its present form is a non-hermetic assembly consisting of the following two major structural segments:
1.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor loops), and required control and detection elements (e.g., generators, various gates and detectors).
2.
A magnetic structure to provide controlled magnetic fields consisting of permanent magnets, coils, and a housing.
These two structural segments of the device are interconnected by a mechanical substrate and lead frame. The interconnect substrate in the present technology is normally a printed circuit board. It should be noted that this model does not include external support microelectronic devices requiredfor magnetic bubble memory operation. The model is based on Reference 33. The general form of the failure rate model is:
hp = hl + h2
where:
Failures/106 Hours
h,
I
NC
I
I
I
Device Complexity Failure Rates for Control and I and Ca, Detection Structure C, .
C11 = C21 = N1
=
.00095(N1).40 .0001(N1)*226 Number of Dissipative Elements on aChip (gates, detectors, 1000 generators, etc.), N1 I
Use: Ea = Ea TJ
= =
.8 to Calculate
55 to Calculate nT2
Junction Temperature (OC), 25 I T J I 1 7 5
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5.7 MICROCIRCUIT, MAGNETIC BUBBLE MEMORIES
C12 =
= =
c22 =
N2
=
lo6
WW =
No. of ReadsperWrite
All Other Model Parameters Parameter Section c2 Duty Cycle Factor - D
I
I
5.9
5.10
I,
5-12
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( R N ).3
1 . OD
Device Complexity Failure Rates for Memory Storage Structure- C12 and CZ2
MIL-HDBK-217F NOTICE 1
5.8
MICROCIRCUITS,
KT
5-13
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~~~
UIL-HDBK-ZL7F N O T I C E L RE
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5.9
MICROCIRCUITS,
i
cans4
i
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.o01 2 .O01 6 .0025 .0034 .0043 ,0053 .0062 ,0072 .0082 .o1 o .o1 1 .O13 .O17 ,019 .032 .041 .068
.098
.i 2
NOTES:
1.
2. 3. 4.
5-14
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RE
9999970 0070728 8
MIL-HDBK-217F
5.10
ZQ
. F
GM
NS NU AIC AIF AUC *U.F . ARW SF MF ML CL
..
"E 50 2.0 4.0 4.0 6.0 4.0 5.0 5.0 8.0 8.0 SO. 5.0 12 220
- zc
"Q
1:
Procured in full accordance O, Class S with MIL-M-3851 requirements. Procured in full accordance with MIL-1-38535 and Appendix B thereto (Class U). .25
2.
3.Hybrids:(Procured to Class S requirements (Quality Level K) of MIL-H-38534. Class R Cateaories; 1. Procuredin full accordance with MIL-M-38510, ClassB requirements. 1.o
I
I
.5 1 .o 1.5 2 2.0
nL = .O1 exp(5.35 - ,35Y)
I
-
I
1
Glass -1 CategpIy; Fully compliant with all requirements of paragraph 1.2.1 of MIL-STD-883 and procured to a or MIL drawing, DESC drawing other government approved documentation. (Does not include hybrids), For hybrids use custom screening section below.
2.0
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. MIL-HDBK-217F
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ZQ
s
Point Valuation
Group
1.
'NOT APPROPRIATE FOR PLASTIC PARTS. NOTES: 1 . Point valuation only assigned if used independent of Groups 1, 2 or 3. 2. Point valuation only assigned if used independentof Groups 1 or 2. 1, 2 and 3 must be followed. 3. Sequencing of tests within groups 4. TM refers to the MIL-STD-883 Test Method. 5. Nonhermetic parts should be used only in controlled environments(Le., GB and other temperature/humidity controlled environments). EXAMPLES:
1.
2.
5-16
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2'
ior Hybrids) (FinalElect&als @ Temp Extremes) and TM 1014 (Seal Test,Cond A, B, or C) and TM 2009 (Extemal Visual) TM 101O (Temwrature Cycle, Cond B Minimum) or TM 2001 (Constant' Acceleration, Cond B Minimum) TM 5004 (or 5008 for Hybrids) (Final Electricals @ Temp Extremes) A, B, or C) and TM2009 (External and TM 1014 (Seal Test, Cond Visual) Pre-Bum in Electricals TM 1015 (Burn-in B-LeveVS-Level) and TM 5004 (of 5008 for Hybrids) (Post Bum-in Electricals @ Temp Extremes)
TM 2820 Pind(ParticleImpactNoiseDetection)
.
50
37
30
36
11 11
Level) (B (S Level)
(Note 1)
7
7
7.
(Note 2)
7
7 1 1
TM 2009 (ExtemalVisual)
10 11
(Note 2)
ZQ=2+
.
XQ
=2
87 + 50+30
= 3.1
Mfg.performsinternalvisualtest,sealtestandfinalelectricaltest:
I
RQ = 2 +
ZQ =
87 7+7+1
= 5.5
10
MIL-HDBK-217F
RE
m 9999970 0070730
MIL-HDBK-217F
5.11
Ideally, device case temperatures should be determined from a detailed thermal analysis of the equipment. Device junction temperatureis then calculated with the following relationship:
TJ TC
= =
Case Temperature (C). I f not available, use the following default table. Defautt Case Temperature(Tc) for all Environments
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Tc(OC)
I 35
=
45
50
I 45
50
I 60
60
75
75
60
I 35
50
60
45
Junctionto-case thermalresistawe (OCrWatt) for a device soldered into a printed circuit board. If eJJc i s pot available, use a value contained in a specification for the closest equivalent deviceor use .the following table. Die Area> 14,400 mi12 eJC
Package Type (Ceramic Only) Dual-ln-Line Flat Package Chip Carrier Pin Grid Array Can
(W
11 10 10 10
28 22 26 20 70
The maximum power dissipation realized in a system application. If the applied power is not available, use the maximum power dissipation from the specification for the closest equivalent device.
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9999970 0070733 B
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5.12
MICROCIRCUITS, TJ DETERMINATION, (FOR HYBRIDS)
This section describes a method for estimating junction temperature (TJ) for integrated circuit dice mounted in ahybrid package. A hybrid is normally made up of one or more substrate assemblies mounted
or thin within a sealed package. Each substrate assembly consists of active and passive chips with thick
film metallization mountedon the substrate, which in turn may have multiple layers of metallization and dielectric on the surface. Figure substrate.The
5-1 is a cross-sectional view of a hybrid -with a single multi-layered
layers within the hybrid aremade up of various materials with different thermal
characteristics. The table following Figure 5-1 provides a list of commonly used hybrid materials with typical thicknesses and corresponding thermal conductivities (K). If the hybrid internal structure cannot be
. determined, use the following default values for the temperature rise from case to junction: microcircuits,
CHIP (A)
SUBSTRATE (D)
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
PACKAGE
CASE (F)
Figure' 5-1:
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II RE m 9 9 9 7 9 7 0 007bLOL 5
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Material
Typical Usage
(%)
2.20
Ki
Silicon
Chip Device Chip Device Chip Attach Chip/Substrate Attach Chip/Substrate Attach Chip Attach Glass Insulating Layer Substrate, MHP Substrate, PHP Case, MHP Case, MHP Case, PHP
GaAs
Au Eutectic Solder Epoxy (Dielectric) Epoxy (Conductive) Thick Film Dielectric Alumina
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
0.0070
0.0001 0.0030
.76
6.9 1.3
.O092
.o00014 .O023 ,58 .O23 .O045 ,039 .O038 .O48 .O043 ,0020
O. 0035
0.0035
.O060
-15 .66 .64
6.6
B
C D D F F F
0.0030
0.025 0.025
0.020
0.020 0.020
P
NOTE: MHP: Multichip Hybrid Package, PHP: Power Hybrid Package (Pwr:
2 2W, Typically)
n Ki Li A
= = =
(E)
(UserProvided or FromTable)
Thickness of thMaterial(in)(UserProvided or FromTable) Die Area (in2). If Die Area cannot be readily determined, estimate as follows: A = [ ,00278 (No. of Die Active Wire Terminals) + .041q2
TC
= Hybrid Case Temperature (OC). If unknown, use the TC Defautt Table shown in Section 5.1 1.
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5.13 MICROCIRCUITS, EXAMPLES
c,
"T
.o20
.29
Section 5.9 Section 5.10 Section 5.1 O Group 1 Tests Group 3 Tests (B-level) TOTAL 87 I C Q = ~ + - = 3.1 80
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
aQedm
80 Points
50 Points
"L
Section 5.1O
A 128K Flotox EEPROM that is expected to have aTJ of 80C andexperience 10,000 read/write cycles over the life of the system. The part is procured to all requirements of in Paragraph 1.2.1, MIL-STD-883,Class B screeninglevelrequirementsandhasbeen and will be usedin an production for three years. It is packaged in a 28 pin DIP with a glass seal airborne uninhabited cargo application.
XL
Section 5.2
5-20
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MIL-HDBK-217F
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ICE
"Q
'
MICROCIRCUITS, EXAMPLES
=
=
"L
hcyc =
= B2 = O for Flotox
Assume NO ECC, XECC = 1 Al ='.1 , 7K I C 5 15K Entry i at bottom of B1 and B2 Table) B1 = 3.8 (Use Equation Acvc A1 B1 (.1)(3.8) = .38
A MA4GM212 Single Pole Double Throw Switch, DC - 12 GHz, 4 transistors, 4 inductors, 8 resistors, maximum input PD = 30 dbrn, 16 pin hermetic flatpack, maximum TCH = 145OC in a ground benign environment. The part has been manufactured for 1 year and is screenedto Paragraph 1.2.1 of MIL-STD-883, Class B equivalent screen.
% = [ C1n-p~+ C p E I X L ~ Q
c1
XT
'
Section 5.4
= = =
S.
"A C2
'FE
"L
KQ
=
=
Section 5.4, MMlC Table, 4 Active Elements (See Footnote to Table) Section 5.8, TJ= TCH = 145C Section 5.4, Unknown Application Section 5.9 Section 5.1 O Section 5.1 O Section 5.10
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
%=
+ (.0047)(.5)]
NOTE: The passive elements are assumed to contribute negligibly to the overall device failure rate.
Example 4:
Given:
Hybrid
A linear multichip hybrid driver in a hermetically sealed Kovar package. The substrate is alumina and there are two thick film dielectric layers. The die and substrate attach materials are conductive epoxy and solder, respectively. The application environment is naval unsheltered, in production for over two years. The device is 65OC case temperature and the device has been
5-21
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MIL-HDBK-217F
5.13
MICROCIRCUITS, EXAMPLES
screened to MIL-STD-883, Method5808, in accordance with TableVIII, Class B requirements. The hybrid contains the following components: Active Components:
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
1 1 2
2 2
Passive Components:
2 17 .
LM106 Bipolar Comparator/Buff er Die (13 Transistors) LM741ABipolarOperationalAmplifierDie (24 Transistors) Si NPN Transistor Si PNP Transistor Si General Purpose Diodes Ceramic Chip Capacitors Thick Film Resistors
1.
If limited informationis available on the specific hybrid materials and'construction characteristics in the introductionto Section 5.12 can be the default case-to-junction temperature rises shown used. When detailed information becomes available the following Section 5.12 procedure should be used to determine the junction-to-case(eJC) thermal resistance and TJ values for . each component.
(Equation 1)
.O045
B
(2)(.0045) C
D
'
=
E
F
948
.1258
Die Area = [ .O0278 (No, Die Active Wire Terminals) TC+~JCPD (Equation 3)
+ .O4172
(Equation 2)
TJ =
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MIL-HDBK-217F NOTICE 2
5.13
MICROCIRCUITS, EXAMPLES
LM 106
No. of Pins
LM741A 14
Si NPN
Si PNP
3
.6
Si Diode
2
3
.6 .O025 50.3 95
.O025
rCw
50.3
TJ ("c)
2.
95
89
X T +% c2 =X [c E 1l X Q n L
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Section 5.1
Because C2 = O;
hp = C1 XTZQ XL
=
(.01)(3.8)(1)(1) = .O38Failures/106Hours
.6,
% P T ~ A X R ZSXQXE
Section 6.3;
XA, X Q , XE DefauR to
1.O
(.00074)(3.9)(1.0)(1.8)(.29)(1)(1)
.O015 Failures/106 Hours
Xp =
.O015Failures/106 Hours
E) Silicon General Purpose Diode (Analog), Voltage Stress= 60%, Metallurgically Bonded Construction.
hp =
=
V T X S xc
XQXE
Section 6.1
: XQ, XE Default to
1.O
5-23
VIL-HDBK-217F
CHG N O T I C E 2
MIL-HDBK-217F NOTICE 2
5.13
MICROCIRCUITS, EXAMPLES F) Ceramic Chip Capacitor, Voltage Stress = 50/0, TA = TCASE forthe Hybrid, 1340 pF, 125C Rated Temp.
Ap
=
=
G) Thick Film Resistors, per instructionsin Section 5.5, the contribution of these devices is considered insignificant relativeto the overall hybrid failure rate and they may be ignored.
Ap
+ (2)(.0069) + (2)(.0039)](1 +
hp
=
5-24
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F
6. O
The semiconductor transistor, diode and opto-electronic device sections present the failure rates on the basisof device type and construction. An analytical model of the failure rate is also presentedfor each device category. The various types of discrete semiconductor devices require different failure rate models that vary to some degree. The models apply to single devices unless otherwise noted. For multiple devices ina single package the hybrid model in Section 5.5 should be used. The applicable MIL specification for transistors, and optoelectronic devices is MIL-S-19500. The quality levels (JAN, JANTX, JANTXV) are as defined in MIL-S-19500. The temperature factor (ET) is based on the device junction temperature. Junction temperature should be computed based on worse case power (or maximum power dissipation) and the device junction to case thermal resistance. Determination of junction temperatures is explainedin Section 6.14. Reference 28 should be consulted for further detailed information on the models appearing in this section.
6- 1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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MIL-HDBK-237F C H G N O T I C E 2
MIL-HDBK-217F NOTICE 2
6.1
DIODES, LOW FREQUENCY DESCRIPTION Low Frequency Diodes: General Purpose Analog, Switching, Fast Recovery, Power Rectifier, Transient Suppressor, Current Regulator, Voltage Regulator, Voltage Reference
SPECIFICATION MIL-S-19500
Temperature Factor - 9
=T
1.o 1.1 1.2 1.4 1.5 1.6 1.8 2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7
TJ (c)
.O030
.O0501
Junction
TJ (c)
zT
T J (C)
nT
30 35 40 45 50 55 60 65 70 75 80 85 90 95 1O0
105 110 115 120 125 130 135 140 145 150 155 160 165 170 175
3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 6.4 6.7 7.1 7.5 7.9 8.3 8.7
25 30 35 40 45
50 55
60 65 70 75
ao
a5
90 95 1O0
1.o 1.2 1.4 1.6 1.9 2.2 2.6 3.0 3.4 3.9 4.4 5.0 5.7 6.4 7.2 8.0
105 110 115 120 125 130 135 140 145 150 155 160 165 170 1 75
9.0 10 11 12 14 15 16 18 20 21 23 25 28 30
I
L
JunctionTemperature (C)
32
1
3091
TJ
+ 273 -
E)
)
I
TJ =
6-2
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MIL-HDBK-217F
RE
9 9 9 9 9 7 0 0070740 9
MIL-HDBK-217F
6.1
"S
"Q
0.7
Transient Suppressor, Voltage Regulator, Voltage Reference, Current Regulator All Others: V , 5 .30. . 3e V , 5 .40 .4 V, 5 .50 .5 e V , 5.60 .6 V , 5 .70 .7 v, 5 .ao .8 c v , 5.90 .9<vs51.00
L
1.o
1 .o
2.4 5.5
8.0
Plastic
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
6.0
For All Except Transient Suppressor, Voltage Regulator, Voltage Reference, or Current Regulator zS = .O54
GM
9.0
9.0 19 13 29
20
(V, I.3)
(.3
"s
v ,
2.43
..vss 1)
'
43 24
.50
SF
MF
v
14 32 320
ML "C CL
i:
6-3
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6.2
RF)
SPECIFICATION MIL-S-19500
. DESCRIPTION
Si IMPATT;Bulk Effect, Gunn; Tunnel, Back: Mixer, Detector, PIN, Schottky: Varactor, Step Recovery
Failures/l O6 Hours
Base Failure Rate Temperature Factor- T (IMF 1 TJ (c) 7ct T
1.o
1.3 1.8 2.3 3.0 3.9 5.0 6.4
Diode
Si IMPAlT ( I 35 GHz) . Gunn/Bulk Effect Tunnel and Back (Including Mixers, Detectors)
I
.22 . i 8 .O023 .O081 .O27 .O025
TJ (c)
25 30 35 40 45 50 .55 60 .65 70 75 a5 90 95 1O0
Detectors) and oint Contact (200 MHz s Frequency I 35 GHz) Recovery Varactor and Step
8.1
10 13 16 19 24 29 35
TJ Cc)
25 30 35 40 45 50 55 60 65
ao
70
75 80 85 90 95 1O0
T TJ =
4.4 4.8 5.1 5.5 5.9 6.3 6.7 7.1 7.6 8.0 8.5 9.0 9.5 10 11
105 110 115 120 125 130 135 140 145 150 155 160 165 170 . 1 75
42 50. 60 71 a4 99 120 140 160 1ao 21o 250 280 320 370
e x p [ 5 2 6T 0J (+!273-K))
=
TJ
Application Factor
Application Diodes Control Voltage Varactor, Multiplier Varactor,
- ICA __
A
.50 2.5 1.o
1 2100
TJ + 273
E))
6-4
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MIL-HDBK-217F
RE M 9 9 9 9 9 7 0 0070742 2 M
. . :
MI-HDBK-217F
6.2 DIODES, HIGH FREQUENCY (MICROWAVE, RF)
Quality Factor Q
(Schot
r)
W
.50
1.o
Quality
JANTXV JANTX JAN Lower
.50
1.3
2.0
2.4
1.a 2.5
1.o
Plastic
PIN Diodes
K R = .326 &Pr)
- .25
nR
5:
1 .O
- E
1.o
2.0
.50 .
1.o
5.0
4.0
NS NU
AIC
5.0
25
11
4.0
5.0
?.O
50
For high frequency patt classes not specified to MIL-S-19500 equipment quality classeq are
defined as devices meeting the same requirements as MIL-S-19500.
12 16
.50
9.0
24
MF
ML
CL
250
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
6-5
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. .
.
,
NIL-HDBK-217F
RE
9999970 0070743 4
MIL-HDBK-217F
6.3
TRANSISTORS, LOW FREQUENCY, BIPOLAR DESCRIPTION NPN (Frequency 200 MHz) PNP (Frequency c 200 MHz)
SPEClFlCATlON MIL-S-19500
Failures/lO6 Hours
Base Failure Rate
-h
,00074
Application
I
I .5
I
-70
ci
NPN
Amplification Linear
. Switching
Temperature Factor
5ET
25 30 35 40 45 50 1.o I .1 1.3 1.4 1.6 1.7 1.9 2.1 2.3 2.5 2.8 3.0 3.3
-I
7ET 4.5 4.8 5.2 5.6 5.9 6.3 6.8 7.2 7.7 . 8.1 8.6 9.1 9.7 10 11
T J PC)
105 110 115 120 125 130 135 140 145 150 155 160 165 1?O 175
- KR
"R
.43 .77 1.o
1.8
"
55
60 65 70 75 80 85
90 95 1O0
2.3
4.3
5.5
3.6
3.9 4.2 1 exp(-2114(
10
1 TJ+273-=))
ZR = .43
ER
TJ =
(P,)*37
6-6
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MIL-HDBK-217F
6 . 3
Voltage Stress Factor ICS Applied VCE/Rated VCEO *S TRANSISTORS, LOW FREQUENCY, BIPOLAR Environment Environment GB GF
o < vs I
.3 .4 .5 .6 .7
.8 '9
.3 <vs I .4 c v, I . 5 V , I .6 V, 5 .7 c V, I .8 c V , I .9 c v, s 1.0
nE 1 .o 6.0
9.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
GM
.39
.54 .73 1.o.
.
NS
NU AIC AIF AUC.
.
9.0
19 13 29
~
20
43 24
ns
,045
exp (3.1(Vs))
(O
V, I 1 .O)
v ,
VCE
50
14 32 320
ML
CL
Quality Factor
,
- XQ
Quality JANTXV
i
.70
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6.4
TRANSISTORS, LOW FREQUENCY, Si FET DESCRIPTION N-Channel and P-Channel Si FET (Frequency 5 400 MHz)
SPECIFICATION MIL-S-19500
I
.o1 2
.O045
Application Factor ICA Application Rated (Pr, Output Power) Amplification Linear (Pr Switching Signal Small
. "A
1.5
W
-70
-I
ZT
3.9 4.2
ZT
TJ ?c) 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175
25 30 35 40 45 50 55 60 65 70 75 80 85 90
95
1O0
1.o 1.1 1.2 1.4 1.5 1.6 1.a 2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7
4.5
4.8 5.1 5.4 5.7 6.0 6.4 6.7 7.1 7.5 7.9 8.3 8.7
50 <.Pr
C
4.0
%OW
,
0.0
10 Pr 2 250W
Environment FactorEnvironment 1 GB GF GM
NS
Xe
-=))
(OC)
1 .o 6.0
9.0
'
*T
TJ =
9.0
(-lg2' (T~+273
Nu AIC
19
Junction Temperature
13
29
AIF
Quality Factor 'CQ
AUC AUF
20
43
Quality
JANTXV JANTX JAN
ARW
24
SF
MF ML CL
32 320
.50
14
Lower Plastic
6-8
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MIL-HDBK-217F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
6.5
TRANSISTORS, UNIJUNCTION
SPECIFICATION MIL-S-19500
Quality Factor
- XQ
.70
1 .o
2.4 5.5
8.0
Temperature Factor
T J ec)
TJ (Oc)
25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 1O0
1.o 1.1 1.3 1.5 1.7 1,9 2.1 2.4 2.7 3.0 3.3 3.7 4.04.4 4.9 5.3
105 110 115 120 125 130 135 140 145 150 155 160 165 170 175
'T
*'P
(-
2483 (TJ
273
"I
11
EnvironmentFactor - xE
"
Environment
"E
I .o 6.0. 9.0
"
12 13 13 14 15 16
9..o 19
"
13
29
20
Z ) )
1
43 24
TJ =
Junction Temperature
("C)
.50
14 32 320
I -
I
l
ML CL
6-9
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MIL-HDBK-217F
6.6 TRANSISTORS, LOW NOISE, HIGH FREQUENCY, BIPOLAR
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
SPECIFICATION MIL-S-19500
DESCRIPTION Bipolar, Microwave RF Transistor (Frequency > 200 MHz, Power 1W)
h, = h b ~ T ~ R ~Failures/l S ~ Q ~ O6 EHours
Application Note: The model appliesto a single die (for multiple die use the hybrid model). The model does .. apply to ganged transistors on a single die. Power Rating Factor ICR .. Base Failure Rate A,, Rated Power (Pr,Watts) R
Temperature Factor
TJ Fc) 25 *T
- nT
*T
4.5
TJ
vc)
30 35
40 45 50 55 60 65 70 75
1 . 4
1.6 1.7 i.9 2.1 2.3 2.5 .2.8
ao as
3.0 3 . 3
3.6
90
95 1 O0
3 . 9
4.2
1o5 i10 115 120 125 130 135 140 145 1.50 155 160 165 170 75
4 . 8
o
.
Pr i . I . I < Pr I .2 .2 < Pr I. 3 . 3 < Pr S .4 .4 < Pr S -5 .5 < Pr I.6 .6 < Pr I.7 .7 < Pr S .8 .8 < Pr I.9
.43
.77
.83
.88
.
.92 .96
6.3 6 . 8
7 . 2
7.7
8 . 1
8.6 9.1 9.7 10 11
1 .4
I .5
1
T TJ
a
.6 S -7
I. 8
I
exp(-2114( T J + 2 7 3 . - E ) )
Junction Temperature (C)
v , .a c v , .9 < v ,
.7 c
. 9
I 1.0
IC, =
V ,
(O
VcE
r
S
.11
.16
.2 1
.29
.39
.54 .73
1.o
V , 1 1.O)
VcEo
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MIL-HDBK-217F
6.6
Quality Factor -
Environment Factor -
Quality
JANTXV JANTX JAN
.
Q
.50
1.o 2.0
Environment
E 1 .o
2.0
5.0
4.0 11
Lower
5.0
4.0
NOTE: For these devices, JANTXV quality class must include IR Scan for die attach and screen for barrier layer pinholes on gold metallized devices.
5.0
7.0
12 16
.50
.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
9.0 24 250
6-1 1
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MIL-HDBK-217F
6.7
TRANSISTORS,
SPECIFICATION
MIL-S-19500
h, = hbzTzAz,,pQzEFailuresA O6 Hours
Base Failure Rate A+, Frequency (GHz) 1.o 5 0.5 ,040 .O39 .O38 1 .O47 .O46 2 .O67 .O65 3 .O95 .O93 4 .14 .13
5.0
.20 .62
400 .36
500
600 1.3
.74
o
+,
=
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.O32 exp(.354(F)
+ .00558(P)) F
Frequency (GHz)
Output Power
(W)
NOTE: Output power refersto the power level for the overall packaged device and tonot individual transistors within the package (if more than one transistor is ganged together). The output power represents the power output from the cycle in pulsed applications. Duty cycle is accounted for when active device and should not account for any duty determining zk
Temperature Factor
- .
leT ..
TJ (c)
a l O0
.50
.55
.50
.59 .68 18 .79 i91
.45
.30 -37 .45 .54 .64 5.1 .75 7.1 -88 1,O 13 . 1.2 1.4
.40 .49 .59 .71 .85 3.4 1.0 4.7 1.2 8.8 1.4 4.4 1.6 1.8 20
Temperature Fadtor ICT (Aluminum Metallization) V , (VCEIBVCES) TJ (C) 5.40 . -45 .50 s1 1.1 O0 -.75 .38 110 5 7 1.7 .1.1 2.3 ,84 1.7 2.5 1 130 1.2 2.4 3.6 140 150 160 6.5 3.3 1 23 180 18 12 190 31 23 7.8 15 200 30
.55
1.5 3.3 4.8
9.5
13
40
&))I
273
1
+
I
i
I
1 XT
(-
1
+
273
- K))s
RT 7.55 (vs
(.4 < v ,
VS
s 55)
exp
(-
273
- E))
I
= BVCES VCE; = =
=
= =
VCE BVCES
Operating Voltage (Volts) Collector-Emitter Breakdown Voltage with Base Shorted to Emitter (Volts) Peak Junction Temperature (OC)
VCE
BVCES
TJ
TJ
(C)
6-12
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4
MIL-HDBK-217F RE
7 9 9 9 7 7 0 0070750
MIL-HDBK-217F
6.7
Application Factor CA Duty Factor Application NIA cw Pulsed
I Q
.so
1 .o
I 1%
5% 10% 15% 20% 25% 2 30%
1
XA
.=
7.6,CW
M
1.o
2.0
2.0
5.0
NOTE: For these devices, JANTXV quality class must include IR Scan for die attach and screenfor barrier layer pinholes on gold metallized devices.
ICA =
- M
Environment
GM
5.0
4.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
6-1 3
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6.8
SPECIFICATION MIL-S-19500
DESCRIPTION
-L
2
"
e .1
.O52 .O52 .O52 ,052 .O52 ,052 .O52 ,052
"
4
"
6
"
5
6
7 '8
9 10
.O54 ,084 ,083 .13 .30 .20 .30 .46 ,72 .71 1.1
.56
.85
1*3
'
50
2.0
'
A t . , =
A+,
F
,052
Frequency (GHz)
The average output power represents the power output from the active device and should not account for any duty cycle in pulsed applications.
Temperature Factor
- zZT
24 28 33 38 44 50 58 66 75 85 97 110 120 140 150
T c ("C)
25 30 35 40 45 50
KT
1.o 1.3 1.6 2.1 2.6 3.2 4.0 4.9 5.9 7.2 8.7 10 12 15 18 21
Tc ("c)
105 110 115 120 . 125 30 135 140 145 150 155 160 165 170 175
ZA
55
60 65 70 75 80 85 90 95 1O0
I '
cw
'
~~~~~
4
~ ~
1 I I
Channel Tc Temperature
("C)
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- ..
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.O093 exp(.429(F)
+ .486(P))
4sFs10,
.1 < P 1 6
~~
IIL-HDBK-217F
NOTICE 3 RE
9999970 0076303
MIL-HDBK-217F NOTICE 1
6.8 TRANSISTORS, HIGH FREQUENCY, GaAs FET
"M
1 .o
2.0
1 .o
2.0
GM NS NU
5,O
4.0
4.0
11
- na
"Q
.50
1 .o
4.0
5.0
7.0
12 16 .50
2.0
5.0
9.0
24 250
ML
CL
page Supersedes
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6-15 of Revision F
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6-15
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F
6.9
TRANSISTORS, HIGH FREQUENCY,
S I
FET
DESCRIPTION Si FETs (Avg. Power c 300 mW, Freq. > 400 MHz)
SPECIFICATION MIL-S-19500
h , =h b 7 C T X Q 7 C E Failures/l O6 Hours
Base Failure Rate Transistor Type MOSFET JFET
.O23
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
+-,
I
I
Quality JANTX JAN
Quality Factor- XQ
i
.50
1.o
JANTXV
2.0
Temperature Factor
TJ
IZT
XT
Lower
5.0
vc)
T
1.o 1.1 1.2 1.4 1.5 1.6 1.8 2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7
TJ (c)
105 110 115 120 125 130 135 140 145 150 155 160 165 170 175
25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 1O0
-8.3
8.7
3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 6.4 6.7 7.1 7.5 7.9
GB
GF GM NS NU
1.o
2.0
5.0
4.0
11 4.0
AIF
%C AUF
5.0
7.0
12 16
AFIW
SF
.50
9.0
24
MF
ML
CL
250
6-1 6
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NIL-HDBK-217F
RE W 9997770 0070754 9
MIL-HDBK-217F
6.1 O THYRISTORS AND SCRS
SPECIFICATION MIL-S-19500
Type Device
1
I
All Types
I
I
.o022
I
I
- ZR ..
R.
.
-:
TJ (c) 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175
.O5 .1o .50 . 1.0 5.0 10 20 30 40 50 60 70 80 90 . 1O0 110 120 130 140 150 160 170 175
,30
. .40
,76 1.o 1.9 2.5 3.3 3.9 4.4 4.8 5.1 5.5 5.8 6.0 6.3 6.6 6.8 7.0 7.2 7.4 7.6 7.8 7.9
TJ =
frms
RMS RatedForwardCurrent(Amps)
6-1 7
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.
. -
..
' MIL-HDBK-217F
RE
7797770 0070755
IrS'.10
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F
Environment Environment
XE
nS
GB
GF
1 .o
6.0
us
.io .la
.27 .3a
GM
NS NU AIC AIF %C AUF ARW SF MF
9.0 9.0
19 13
.51
.65 .a2
'
29 20 43
24
1 .o
'
.50
14 32
"s
0.3)
ML
Quality Factor
- XQ
"Cl
0.7
1 .o
CL
320
Quality
JANTXV JANVX JAN
2.4
bower
Plastic
5.5
8.0
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MIL-HDBK-217F
RE W 9 9 9 9 7 7 0 O070756 2
MIL-HDBK-217F
6.1 1
EMITTERS
.o040
,0025
"Q
JANTXV
.70
Opto-Isolators
Photodiode Output, Single Device
'
Phototransistor Output, Single Device Photodarlington Output, Single Device Light Sensitive Resistor, Single Device Photodiode Output, Dual Device Phototransistor Output, Dual Device Photodarlington Output, Dual Device Light Sensitive Resistor, Dual Device
.O13
,013
.O064
.O033 .O17
.dl 7
.o086
"E.
1;o 2.0
Emitters
Infrared Light Emitting Diode (IRLD) Light Emitting Diode (LED)
.O013
00023
8.0
5.0 12
4.0
Temperature Factor
TJ ?c)
zT
1.o 1.2 1.4 1.6 1.8 2.1 2.4 2.7 3.0 3.4
nT TJ =
25 30 35 40 45 50 55 60 65 70
I
(
- nT
.
'6.0
6.0
8.0
17 .50
.
9.0
24 450
TJ
+ 273 - E))
6-1 9
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MIL-HDBK-2L7F RE
MIL-HDBK-217F
6.12 OPTOELECTRONICS, ALPHANUMERIC DISPLAYS DESCRIPTION Alphanumeric Display
SPECIFICATION MIL-S-19500
of
Ib
I 1
Diode Array Display .O0026 .O0030 .o0043
,00047 .O0060
Temperature Factor
-:
Ib
TJ (c)
25 30 35 40 45 50
%T
1.o 1.2 1.4 1.6 1.8 2.1 2.4 2.7 3.0 3.4
1 wRogicChip
2 2 wL& Chip 3 3 w/Lgic Chip
4
.O0086
,00090
*
,0013 .O013
.O017 .o018
.O0064
.o0077
55 60
65 70
6.6
4 wkogic Chip
5
.O0081
,00094 .o01 1
8.0 8.8
6
7
8
9
10 11 12 13 14 15
.O052
,0056 .O060
*T
, P ( -
2790 (TJ
+ 273
298
1
E
.O065
.O026
A+, =.00043(C) + +, for Segment Displays A+, = .O0009 + .00017(C) + A o , DMe Array Displays
C
a
1 .o
Number of Characters
,000043 for Displays with a Logic Chip 0.0 for Displays without Logic Chip
2.0
A c , .
8.0 5.0
12 4.0
.
NOTE: The number of characters in a display is the in a && sealed number of characters contained
padtage. For example, a 4 character display comprising 4 separately packaged single characters 6.0 character displays, be 4-0119 mounted together would not 1-four character display. Quality Factor FQ
AIC
AIF AUC AUF
ARW
6.0
8.0
17
SF
50
9.0
MF
ML CL
24 450
8.0
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MIL-HDBK-217F
RE
= 9999978 8[378758 b
MIL-HDBK-217F
6.13
SPECIFICATION MIL-S-19500
DESCRIPTION Laser Diodes with Optical Flux Densities 3 MW/cm2 and Forward Current < 25 amps
- +,
GaAdAI GaAs
In GaAYln GaAsP
Temperature Factor
- nT
%T
1.o 1.3 1.7 2.1 2.7
3.0
4.0 5.0 10 15 20 25
Tc1 =
-
25 30 35 40 45 50 55
60 65
()a68
3.3
4.1 5.1 6.3 7.7 9.3
1
NOTE: For Variable Current Sources, use the Initial Current Value.
70 75
T ' TJ =
+! 273 - g ))
"""""Pulsed
. .
*A
4.4
.I .2 .3
.4
.32
.45 .55
-
.5
.6
.7
Quality Factor- XQ
.8
Quality Hermetic Package Nonherrnetic with Facet Coating Nonhermetic without Facet Coating
nn
I
XA
.9 1.o
J
Pulsed
1.o 1.o
= 4.4,
cw
3.3
NOTE: A duty cycle of one in pulsed application represents the maximum amountit can be driven in a pulsed mode. This is different from continuous wave application whichwill not withstand pulsed operating levelson a cntinuous basis.
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Forward Current Factor, 1 Forward Peak Current (Amps) .O50 .O75 .1 .5 . 1.0 2.0
~.
MIL-HDBK-ZE7F R E
9999970 0670759 B W
MIL-HDBK-217F
6.13
- ICE,
nP
Environment Environment
.so
.53
GB
.I o
.15 .20 .25 .30 .35
AO
.56
, 5 4 9
6,
GM
NS
NU
2.0
.63 .67
.71
5,O
12
.77 .83
.91 1.o 1.1 1.3 1.4 1.7 2.0 2.5
.4S
.50 .55
AIC
AIF
AUC
4.0 6.0
6.0 8.0
.60. .65
.70 .75
. ,
AUF
.ao
ARW SF
17
'
10
3 . 3 5 . 0
.50
MF. ML
CL
9.0
24 450
PS Pr =
(mw)
RequiredOpticalPowerOutput
(mw)
NOTE: Each laser diode must be replaced when power outputfalls to Pr for failure rate prediction to be valid.
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8.0
MIL-HDBK-217F
RE
9 9 9 9 9 7 6 0870760 4
MIL-HDBK-217F
6.1 4
Ideally, device case temperatures should be determined from a detailed thermal analysis of the equipment. Device junction temperature is then calculated with the following relationship: TJ = T c + OXP where: TJ
=
Junction Temperature (C) Case Temperature (C). If no thermal analysis exists, the default case temperatures shownin Table 6-1 should be assumed.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
TC- = eJC =
Junction-to-Case Thermal Resistance (Cm. Thisparametershouldbe 6-2, whichever is determined from vendor, military specification sheets or Table greater. It may alsobe estimated by taking the reciprocal of the recommended derating level. For example, a device derating recommendation of .16 W/C would f result in a OJC of 6.25 OCM. If eJC cannot be determined assumea eJC value o 70CM. Device Worse Case Power Dissipation (W)
. P
The models are not applicable to devices at overstress conditions. I f the calculated junction temperature is greater than the maximum rated junction temperature on the MIL slash sheets or the vendors specifications, whichever is smaller, then the device is overstressed and these models ARE NOT APPLICABLE.
Table 6-1:
Environment GB GF GM
TC (c)
35 45 50 45 50 60 60 75
NS
NU AIC AlF AUC . AUF ARW SF
75
60 35 50 60 45
MF
ML CL
6-23
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MIL-HDBK-ZL7F
RE
9 9 9 9 9 7 00 8 7 8 7 b l
MIL-HDBK-217F
6.1 4
Table 6-2:
(eJ c )
for Semiconductor
t
1
. c
Type Package TO-1 TO-3 TO-5 TO-8 TO-9 TO-1 2 TO-18 TO-28 TO-33 TO-39 TO-41 TQ-44 TO-46 TO-52 TO-53 TO-57TO-59 TO-60 TO-61 TO-63 TO-66 TO-71 TO-72 TO-83 . TO-89 TO-92 TO-94 TO-99 TO-1 26 TO-127
eJC
?O 10 70 70 70 70 70 5 70 70 10 70 70 70 5 5 5 5 5 5 10 70 70 5 22
eJC
Type Package TO-205AD TO-205AF T01220 DO-4 DO-5 DO-7 DO-8 DO-9 DO-13 . DO-14 DO-29 DO-35 DO-41 DO-45 DO-204MB DO-205AB PA-42A,B PD-36C PD-50 PD-77 PD-180 PD-319 . PD-262 PD-975 PD-280 PD-21 6 PT-2G PT-GB . PH-1 3 PH-1 6 PH-56 PY-58 PY-373
- 70
70 5 5 5 -. 1o 5 5 10 5 10 10 10 5 70 5 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70
'
'
'When available, estimates must be based miliary on specification sheetor vendor values, whichever 8Jc s higher.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
70
5 70 5 5 10 10
'
TO-204
TO-204AA
70
90
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...
MIL-HDBK-217F
RE
m 9979970
00707b2 8
MIL-HDBK-217F
6.1 5 DISCRETE SEMICONDUCTORS, EXAMPLE
I Example
Given:
Silicon dual transistor (complementary), JAN grade, rated for 0.25 W at 25%, one side only, and 0.35 W at 25"C, both sides, with Tmax = 2OO0C, operating in linear service at 55C case temperature in a sheltered naval environment. Side one, NPN, operating at 0.1 W and 50 percent of rated voltage and side two, PNP, operating at 0.05 W and 30 MHz. percent of rated voltage. The device operates at less than 200
Since the device is a bipolar dual transistor operating at low frequency (c200 MHz), it falls into the Transistor, Low Frequency, Bipolar Group and the appropriate model is given in Section 6.3. Since the of each side separately and sum them device is a dual device, it is necessary to compute the failure rate together. Also, since 0JJc is unknown, eJC = 70C/W will be assumed. Based on the given information, the following model factors are determined from the appropriate tables shown In Section 6.3. xb 3 "T1 = "T2 = "A =
= "st = "s2 =
XR
ZQ
=
=
"E
Side 1, TJ =TC + 0Jc P = 55 + 70(.1) = 62C Side 2, TJ = 55 + 70(.05) = 59C Using equation shown with nR table, P , = .35W Side 1,50% Voltage Stress Side 2,30% Voltage Stress.
hp hp
=
= =
SIDE 1 SIDE 2% "T1 "A "R "SI ".Q XE -b % "T2 "A ".S2"Q "E
( . 0 0 0 7 4 ) ( 2 . 2 ) ( 1 . 5 ) ( . 6 8 ) ( . 2 1 ) ( 2 . 4 ) ( 9 + )(.00074)(2.1)(1s)(.68)(.11)(2.4)(9)
.O1 1 Failures/lO6 Hours
6-25
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MIL-HDBK-217F
NOTICE
L RE
= 9999970 0076L0.5 2 W
MIL-HDBK-217F
7.1
TUBES, ALL TYPES EXCEPT TWT AND MAGNETRON DESCRIPTION All Types Except Traveling Wave Tubes and Magnetrons. Includes Receivers, CRT, Thyratron, Crossed Field Amplifier, Pulsed Gridded, Transmitting, Vidicons, Twystron, Pulsed Klystron, CW Klystron
ectifier
"
KW.
'
I f the pulsed Klystron of interest is not listedabove, use the Alternate Pulsed Klystron hb Table on the following page.
7- 1
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MIL-HDBK-217F
NOTICE
L RE I 9 9 7 9 7 7 0 0 0 7 6 3 0 6 Y
MIL-HDBK-217F NOTICE 1
7.1
Po
.o 1
-30
.80 1,o
3.0
.2 16 16 16 17 18 19 21 22
.4
.6 16 17 17 18 21 25
.8
1.0
2.0
4.0
6.0
21
T (years)
1
10
16 16 17 17
16 17 18 18
23
20
22 25 28 45
5.0 8.0 10 25
28
30 34
60
35
40
3 1
75
16 16 16 16 17 20 18 18 25 21 19 2822 25 34 31 45 40 63 45 75 90 160
30 34
51 75 110
XL = =
=
I
10(T)-2.1, 1
ITS3
10,
T <1
hb =
F P
=
2.94(F)(P) + 16
1,T23
Rates.
Environment
"E .50
1 .o 14
GB
Alternate* Base Failure Rate for CW Klystrons -
+ ,
66 66
GF
GM
NS
NU
8 .O
24
5 .O
o. 1 1.o
3.0
5.0 8.0 10
30
50
30 3 1 32 33 34 35 37 30 35 45 46
55 70 80
3 1 32 33 34 36 30 39
56 71
33 33 34 35
48 58 73
34 34 35 36 49 59
30 47 39 48 40 58 49 4 1 50
42
57 57
8.0 6 .O
12
43
80 1O0
0 1
40
+,=
P
F
0.5P + .0046F
+ 29
SF
MF
ML
22
-20
57
1O00
=
=
Average Output Power in K W , 0.1 IP 4 100 and P s 8.0(1O)6(F)-1*7 Operating Frequency in MHz, 300SF18000
CL
Rates.
7-2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F NOTICE 2
7.2
DESCRIPTION
Traveling Wave Tubes
18 24 24 24 24 24 25 26 26 27 29 32 29 29 29 29 29 30 31 32 33 35 39 35 43 42 42 42 42 43 44 45 46 49 51 56 62 61 61 61 62 63
Frequency (GHz) 11 11 11 11 11 12 12 12 13 14 15 17 12 12 12 12 12 13 13 13 14 15 16 18 13 13 13 13 14 14 14 15 15 16 18 20 16 16 16 16 17 17 17 18 19 20 22 24 19 20 20 20 20 20 21 22 23 24 26 29
"E
.5
GB
GF
GM
1.5
7.0
64
66 68 71 75
NS
3.0
10
h"
P F 5 a
NU
AIC
AIF
5.0
7.0
83
91
AUC
ll(l.ooool)p (1.1)F Rated Power in Watts (Peak, if Pulsed), .O01 I P I40,OOO Operating Frequencyin GHz, .1 5 F < 18
6.0
AUF ARW
9.0
20
SF
MF
ML CI
.O5
11
If the operating frequency is a band, ortwo different values, use the geometric mean of the end point frequencies when using table.
33
500
7-3
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MIL-HDBK-217F
7.3
TUBES, MAGNETRON
h,
= hbxUxCxEFailures/106 Hours
.1 .5 1 30 5 20 10 P(MW) 7 41 24 .o1 7.6 4.6 1.4 10 6.3 1.9 30028026056 230210 34 180150120 93 .O5 110 64 39 .1 12 7.2 2.2 130 80 48 .3 15 9.0 2.8 17 10 3.1 410 370 330 290 240 200 54150 89 .5 0 230 170 100 62 1 19 11 3.5 4.4 24 14 680 630 580 530470410350280 77 210130 3 85 31 230 140 4.9 26 16 5
Frequency (GHz) . 40 . . 50
60
70
80
90
100
440 O
480 550
Pulsed Magnetrons:
hb =
I
I
5 KW):
%=I8
RI I
"E
1.o
o .o
0.1
o .2
0.3 O-4 O .5 0.6
GF
GM
2.0
4.0
NS
NU
15
47
10
16
12
O. 7 0.8
.83
.89 .94
AIC
AIF
o .9
%C
RU =
0.44 + 0.56R
AUF
23
80
ARW
SF
.50
MF
a
43
133
"C
1.o
ML CL
2000
1.o 5.4
7-4
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
i
!
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MIL-HDBK-217F RE
9 9 9 9 9 7 0 00707b7 7
MIL-HDBK-217F
8 .O
LASERS, INTRODUCTION
in this section apply to Jaserpeculia-, .e., those items The models and failure rates presented wherein the lasing action is generated and controlled. In addition to laser peculiar items, there are other assemblies used with lasers that contain electronic parts and mechanical devices (pumps, valves, hoses, etc.). The failure rates for these parts should be determined with the same procedures as used for other electronic and mechanical devices in the equipment or system of which the laser is a part.
The laser failure rate models have been developed at the "functional," rather than "piece part" level because the available data were not sufficient for "piece part" model development. Nevertheless, the laser functional models are included in this Handbook in the interest of completeness. These laser models will be revisedto include piece part models and other laser types when the data become available. Because each laser familycan be designed using a variety of approaches, the failure rate models have been structuredon three basic laser functions which are common to most laser families, but may differ in the hardware implementation of a givenfunction. These functions are the lasing media, the laser pumping mechanism (or pump), and the coupling method. Examples of media-related hardware and reliability influencing factors are the solid state rod, gas, gas pressure,vacuumintegrity,gasmix,outgassing,andtubediameter.The electrical discharge,the flashlamp, and energy level are examples of pump-related hardware and reliability influencing factors. The "Q" switch, mirrors, windows, crystals, substrates, coupling function reliability influencing factors are the coatings, and levelof dust protection provided, Some of the laser models require the number otactive optical surfaces as an input parameter. An active optical surfaceis one with which the laser energy (or beam) interacts. Internally reflecting surfaces are not . cwnted. Figure 8-1 below illustrates examples of active optical surfaces and count.
Flgure 8-1:
8- 1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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.. .
M I L = H D B K = 2 L 7 F RE m 9999970 0070768 9 m
MIL-HDBK-21I F
8.1
hp = XMEDIACE
Lasing Media Failure Rate AMEDIA Type
.
~ O U P L I N G ~Failures/l E O6
Hours
AMEDIA
Environment Environment
=B
.30
1 .o
4.0
=F
GM. NS NU AIC
3.0
4.0
4.0
AIF
Coupling FailureRate - b u P L I N G
6.0
AUC
AUF
?,O
9.0
Helium Argon
ARW
5.0
.1 o
3.0 8.0
SF MF ML CL
NOTE: The predominant argon laser failure (as mechanism is related to the gas media reflected in AMEDIA; however, when the tube is refilled periodically (preventive of maintenance) the mirrors (as part ~OUPLING) can be expectedto deteriorate after approximately104 hours of operationif in contactwith the discharge region. ~OU~LIN isG negligible for helium lasers.
NIA
8-2
Document provided by IHS.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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MIL-HDBK-ZL7F
RE
99999700070769
MIL-HDBK-217F
8.2
II
LASERS,, CARBON DIOXIDE, SEALED
. ..
AMEDIA
10 20 30 40 50
1 O0 150
AMEDIA
= 69(l) 4 0
1.
2
. .9900
nos
1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
NOTE: Only active optical surfaces are counted. An active optical surface is one with which the laser energy or beam interacts. Internally reflecting surfaces are not counted. See Figure 8-1 for examples on determining the number of optical surfaces.
"O
O
25
1.0
.75
GF
n o = 1 - .O1 ("hOverfill)
Overfill percentis based onthe percent increase over the optimum CO2 partial pressure which is normally in the range of 1.5 to 3 Torr (1 Torr = 1 m m Hg Pressure) for most sealed C02 lasers.
GM
NS
NU
AIC
AIF AUC AUF ARW
- XB
"6
SF MF ML
O 50
1 O0 150
C,
i
.
NIA 8.0
8-3
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MIL-HDBK-217F
RE
999997[3 0070770 7
MIL-HDBK-217F
8.3
UPL LING
1.o
Environment
GB
-30
1 .o
4.0
300
GF .
GM
NS
P = Average Power CSutputin M ,.O1 S P I l .D
3.0
4.0
4.0
6.0
NU
AIC AIF AUC AUF . ARW SF
Beyond the1KW range other glass failure mechanisms begin to predominate and alter the XCOU~L~NG values. CO2 flowing laser optical It should also be noted that devices are the primary source of failure occurrence. A tailored optical cleaning preventive maintenance program on optic devices greatly extends laser life.
7.0
9.0
5.0
.1o
MF
Optical Surface Factor %OS Active Optical Surfaces nos
3.0
8.0
ML
CL
NIA
1 2
1 2
NOTE: Only active optical surfaces are counted. with which the laser An active optical surface is one energy or beam interacts. Internally reflecting surfaces are not counted. See Figure 8-1 for examples on determining the number of optical surfaces.
8-4
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~~~~~~
MIL-HDBK-237F
RE
9999970 0070773
MIL-HDBK-217F
8.4
RUBY ROD
DESCRIPTION
Neodymium-Yttrium-Aluminum-Gamet (ND:YAG) Rod Lasers Ruby Rod Lasers
znE ~ Failures/l ~ ) O6
Hours
u + ~ , P
l c p ~ ~is pthe failure rate contribution of the Xenon flashlamp or flashtube. The flashlamps evaluated herein are linear types used for military solid state laser systems. Typical default model parameters are given below. PPS
*
is the failure rate contributionof the krypton flashlamp or flashtube. The flashlamps (CW) evaluted herein are the continuous wave type and are most widely used for commercial solid state applications. They are approximately 7mm in diameter and5 to 6 inches long, is the average input power in kilowatts. Default value: P = 4. is the flashlamp or flashtube arc length in inches. Default value: L = 2. isthecoolingfactordue to variouscooling media immediately surrounding the flashlamp or flashtube. z c m ~ = 1 for any air or inert gas
'
is therepetitionpulserate in pulsesper second. Typicalvaluesrangebetween1and 20 pulses per second. is the flashlamp or flashtube input energy per pulse, in joules. Its value is determined from the actual or design Input energy. For values less than30 joules, use Ej = 30. Default value: E 40.
L
z m L
Ej
i'
. cooling,
zmt
Default value: zCmL = .1, liquid cooled. Media Failure Rte - AMEDIA
L
t
in
Laser Type.
ND:YAG
Ruby
&MEDIA
O
is the truncated pulse width in microseconds. Use t= 1O0 microseconds for any truncated pulse width exceeding 100 microseconds. FOI shorter duration pulses, pulse width is to be measured at1O percent of the maximum current amplitude. Default value: t I 100. is the cooling factor due to various cooling media immediately surrounding the flashlamp or flashtube. zCwL I1.O for any air or inert gas cooling. z c m ~ .1 for all liquid cooled designs. Default value: nCmL = .1 , liquid cooled.
I
-
PPS
per second
WOOL
is the energy density in Joules per cm.2/pulse over the cross-sectional area of the laser beam, whichis nominally equivalent to the cross-sectional area of the laser rod, andits value is determined from the actual design parameter of the laser rod utilized.
I
8-5
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MIL-HDBK-2L7F
RE E 9 9 9 9 9 7 0 0870772
O E
MIL-HDBK-217F
8.4
nc
Rigorous cleanliness procedures and trained maintenance personnel. Belbws providedovw optical train,
Minimal procau&r duhg o p o n i n g , maintenaco, r o p a u . urd tosting. Bdbm pt0vid.d ovor opticaltnin.
GF
.%A
30
NS
NU
3.0
4.0
4.0 . 6.0
Minimalpr.cuttionr during op.ning, maintenance, ropair, md tuting. No belbm providd v o r opticrl tmin.
80
*IC
+F
AUC
ARW
7.0
9.0
5.0
SF
.1o
MF
ML
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
3.0
8.0 NIA
CL
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MIL-HDBK-217F
CHG NOTICE 2
MIL-HDBK-217F NOTICE 2
9.1
RESISTORS
'P = 'bzTRP
Resistor Style ;pecification MIL-R11 39008 22684 39017 551 82 55342 10509 11804 8340 1 93 39005 26 39007 18546 39009 23648 27208 39015 1 2934 19 39002 22 22097 39035 94 39023 23285
X X:
S QR E Failures/106 Hours
Description Resistor, Fixed, Composition (Insulated) Resistor, Fixed, Composition (Insulated) Est. Rel. Resistor, Fixed, Film, Insulated Resistor, Fixed, Film (Insulated), Est. Rel. Resistor, Fixed, Film, Established Reliability Resistor, Fixed, Film, Chip, Established Reliability Resistor, Fixed Film (High Stability) Resistor, Fixed, Film (Power Type) Resistor Networks, Fixed, Film Resistor, Fixed, Wirewound (Accurate) Resistor, Fixed, Wirewound (Accurate) Est. Rel. Resistor, Fixed, Wirewound (Power Type)
%
.o017 .o017 .O037 .O037 .O037 .O037 .O037 .O037 .o01 9 .O024 .O024 .O024 .O024 .O024 .O024
.o019
RC
RCR
RL
ns Table Use
Column: 2 2 1 1 1 1 1 1 VIA, X s = 1
1
1
2
RLR
RN (R, C or N)
2
2 2 2 NIA,
=1
RM
RN RD
RZ
RB
RB R
RW RWR RE
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
2
2 2 2 2 2
1 2 2
2
2
RE R
RTH
RT RTR RR RA
NIA, XT = 1 NIA, XS = 1 2 2 2 1 1
.O024 .O024
,0024
1
1
1
1 1 1 1 1 1 1 1
RK
RP
2
2
2
RJ RJ R
RV
2 1 1
RQ
RV C
9-1
flIL-HDBK-ZL7F
CHG N O T I C E 2
9 9 9 9 9 7 0 0197047 813
MIL-HDBK-217F NOTICE 2
9.1
RESISTORS
Temperature Factor
TW) Column 1 .88 1.1
- XT
Column 2
.95
Power Factor- XP
Power Dissipation (Watts) .o01
"P
.o68
20
30
1.1
.o1
.13
.i 7
.44
40
50
60
70
1.5
1.8
1 . 2
1.3 1.4 1.5 1.6
.25
.50 .75 1.o
.5a
.76
2.3
2.8
.89
1.o 1.3 1.5
ao
90
3.4 O 4 .
4.8 5.6 6.6 7.6 8.7
10
1.7
2.0
1 O0 110
1.9
2.0
2.1 2.3 2.4 2.5 1
3 . 0
4 . 0
5.0
10
1.7
1.9
120 130
140
2.5 3.5
4.6
25
50
1O0
I
nT
150
exP
6.0
7.1
150
np = (Power D i s ~ i p a t i o n ) . ~ ~
Resistor Case Temperature. Can be.approximated as ambient component temperature for low power dissipation non-power type resistors.
NOTE: 'CTvalues shown should only be used up to the temperature ratingof the device. For devices with ratings higher than 150C, use the equation to determine x,-.
9-2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F
CHG N O T I C E 2
9999970 0397048 7 5 T
MIL-HDBK-217F
NOTICE 2
9.1
RESISTORS
C ~
.79
.88
66 .81 1.o
1.2
GB
GF
.2
.3
4.0
16 12
42
.99
1.1 1.2 1.4
1.5
GM
NS
.4
1.5 1.8
.5
.6
NU
2.3
18
.7
2.8 .8
.c . -l
23 31
1.7
1.9
3.4
43
63
ARW
Column 1 : zs = .71e1.1( S )
SF
MF ML
37
.50
87 1728
S =
CL
ICQ
.O3
0.1
0.3
1.o
M
Non-Established Reliability Resistors (Most Two-Letter Styles) Commercial or Unknown Screening Level
3.0
10
NOTE: Established reliability styles are failure rate graded(S, R, P, M) based on life testing defined in the applicable military device specification. This category usually applies only to three-letter styles with an RSuff x.
9-3
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Column 1
Column 2
ICE 1 .o
MIL-HDBK-ZL7F CHG N O T I C E 2
9 9 9 9 9 7 0 0397049 b7b
MIL-HDBK-217F NOTICE 2
10.1
CAPACITORS
'P=%
X 'TC 7~ 'TC
Capacitor Style
Spec. MIL-C-
Description
.O0037
Table -
U se
Column:
1
Column:
1
Column:
1
%R
1
cz, cm
CQ,
CQR
a i
CHR
T
CY
I
Document provided by IHS.
Capacitor, Fixed, PaperDielectric, Direct Current (Hermetically Sealed in Metal Cases) Capacitor, By-pass, Radio Interference Reduction, Paper Dielectric, AC and DC (Hermetically sealed in Metallic Cases) 1 1693 Capacitor, Feed through, Radio Interference Reduction AC and DC (Hermetically sealed in metal cases), Established and Nonestablished Reliability 19978 Capacitor, Fixed Plastic (or Paper-Plastic) Dielectric (Hermetically sealed in metal, ceramic or glass cases), Established and Nonestablished Reliability 18312 Capacitor, Fixed, Metallized (Paper, Paper Plastic or Plastic Film) Dielectric, Direct Current (Hermetically Sealed in Metal Cases) 39022 Capacitor, Fixed, Metallized Paper, Paper-Plastic Film or Plastic Film Dielectric 555 14 Capacitor, Fixed, Plastic (or Metallized Plastic) Dielectric, Direct Current in Non-Metal Case: Capacitor, Fixed Supermetallized Plastic Film Dielectric (DC, AC or DC and AC) Hermetically Sealed in Metal Cases, Established Reliability Capacitors, Fixed, Mica Dielectric 39001 Capacitor, Fixed, Mica Dielectric, Established Reliability 10950 Capacitor, Fixed, Mica Dielectric, Button Style 11272 Capacitor, Fixed, Glass Dielectric Capacitor, Fixed, Glass 23269 Dielectric, Established Reliability
.O0037
.O0037
.O0051
.O0037
.O0051
.O0051
.O0051
.O0076 .O0076
2 2
2
1 1
1
2 2
1
1
2
2 2
1 1
2 2
10-1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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MIL-HDBK-217F C H G N O T I C E 2
MIL-HDBK-217F NOTICE 2
10.1
CAPACITORS
I
Description
CK
1 1O1 5
4
Capacitor, Fixed, Ceramic Dielectric (General Purpose) Capacitor, Fixed, Ceramic 3901 Dielectric (General Purpose), Established Reliability Capacitor, Fixed, Ceramic Dielectric (Temperature Compensating), Established and Nonestablished Reliabilihr Capacitor, Chip, Muttiple Layer, Fixed, Ceramic Dielectric, Established Reliability .o0099
CKR
C C , CCR
20
.o0099
.o020
CSR
CWR
39003
capacitor, Fixed, Electrolytic (Solid Electrolyte), Tantalum, Established Reliability Capacitor, Fixed, Electrolytic (Tantalum), Chip, Established Reliability Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum, Established Reliability Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum Ca?hode Capacitor, Fixed, Electrolytic (Aluminum Oxide), Established Reliability and Nonestablished Reliability
.O0040
55365
.O0005
CL CLR
3965 39006
,00040 .O0040
CRL
83500
.O0040
.o0012
CE
Capacitor, Fixed Electrolytic (DC, Aluminum, Dry Electrolyte, Polarized) 81 14409 Capacitor, Variable, Ceramic Dielectric (Trimmer) Capacitor, Variable (Piston Type, Tubular Trimmer) Capacitor, (Trimmer) Variable, Air
62.o0012
cv
PC
(TT
.O079 .O060
Dielectric 92 .O000072
CG
83
10-2
Document provided by IHS.
Supersedes Section
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MIL-HDBK-217F
CHG
NOTICE 2
MIL-HDBK-217F NOTICE 2
10.1
CAPACITORS
Temperature Factor
XT
T(%)
20
Column 1 .91 1.1 1.3 1.6 1.8 2.2 2.5 2.8 3.2
Column 2
.04
30
40 50 60
.o0001
.o001 .o01
.o1
.07
.12
.54
.20 .35
.66
.76
70
.O5
.1
.50
.5 9
.85
80
90 1O0 110 120 130 140 150
.5
1 3
8
1 .o 1.3 1.6
1.9
3.7
4.1 4.6 5.1
5.6
27
35
44
56
18 40 200 1O00
3000
nT
= exp
1 T + 273 298
2.9
15
7tc = c .o9
2. For devices with ratings higher than 150C, use the equation to determin ~ C(for T applications above 15OOC).
Column 2: TC = c.23
10-3
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F
CHG N O T I C E 2
9 9 9 9 90 71 09 7 0 5 2
180
MIL-HDBK-217F NOTICE 2
10.1 CAPACITORS
Column 1
1 .o 1 .o 1 .O
1 .1
Column 2
1 .o 1 .o 1 .o 1 .O
Column 3
1 .o 1 .o 1 .1
1.3 1.6
Column 4
1 .o
1 .o 1 .O 1 .O 1 .O
Column 5
1 .O 1.1 1.2
1.5
2.0
2.7
3.7 3.4
0.5
0.6
0.7
1.4
1.2 2.0
2.0
3.2
2.0
2.6
2.0
15 130
5.7
19 59
0.8
5.2
5.1 6.8
0.9
8.6
4.4
990
5.6
Column 1:
5900
9.0
'zv = (
3 5
Column 2:
nv = ($)'O
+1
S =
Operating Vpltage Rated Voltage
column 3:
'zv =
(2>"+ 1
Note: Operating voltage is the sum of applied DC voltage and peakAC voltage. Series Resistance Factor (Tantalum CSR Style Capacitors Only) - xSR Circuit Resistance, CR (ohms/volt)
L
>0.8
>0.6 to 0.8
>0.4 to 0.6 >0.2 to 0.4
.66
1 .O
1.3
2.0
2.7
>0.1 to 0.2
o to 0.1
CR =
3.3
Eff. Res. Between Cap. and Pwr. Supply Voltage Applied to Capacitor
10-4
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flIL-HDBK-217F
CHG NOTICE 2
9 9 9 7 9 7 0 0 3 9 7 0 5 3 0x7
MIL-HDBK-217F NOTICE 2
10.1
CAPACITORS
Environment Factor X-
~~~
Non-Established Reliability Capacitors (Most Two-Letter Styles) Commercial or Unknown Screening Level
3.0
1o.
10-5
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VIL-HDBK-217F
CHG NOTICE 2
MIL-HDBK-217F NOTICE 2
10.2
CAPACITORS, EXAMPLE
Example Given:
A 400 VDC ratedcapacitortypeCQ09AlKE153K3isbeingusedinafixedground environment, 50C component ambient temperature, and200 VDC applied with50 Vrms @ 60 Hz. The capacitoris being procured in full accordance with the applicable specification.
The letters "CQ"in the type designation indicate that the specification is MIL-C-19978 and that it is a NonEstablished Reliability quality level. The "E" in the designation correspondsto a 400 volt DC rating. The "153" in the designation expresses the capacitance in picofarads. The first two digits are significant and the third is the number of zeros to follow. Therefore, this capacitor has a capacitance of 15,000 picofarads. (NOTE: Pico = 1O-1 2, p = 1O-6) Based on the given information the following model factors are determined from the tables shown in Section 10.1. hb
XT
=
.O0051 1.6 .69 2.9 Use Table Equation (Note 15,000 pF = .O15 pF)
=
=
xc
xv
200 + fi (50) =
40 O
nSR
XQ
1
=
=
3.0 10
XE
10-6
Document provided by IHS.
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flIL-HDBK-237F
CHG N O T I C E 2
MIL-HDBK-217F NOTICE 2
11.1
SPECIFICATION MIL-T-27 MIL-T-21038 MIL-T-55631 DESCRIPTION STY LE Power Pulse High Audio, Power and TF TP INDUCTIVE DEVICES, TRANSFORMERS
Base Failure Rate 3.0 Transformer Flyback (< 20 Volts) Audio (15 -20K HZ) Low Power Pulse (Peak Pwr.< 300W, Avg. Pwr. 5W) High Power, High Power Pulse (Peak Power 2 300W, Avg. Pwr. 2 5W) RF (10K - 10M HZ)
hb (F/1O6 hrs.)
.O054
.O1 4
.o22
,049
.13
Temperature Factor- nT 20 30 40 50 60 70 80 90 1O0 110 120 130 140 150 160 170 180 190 XT .93 1.1 1.2 1.4 1.6 1.8 1.9 2.2 2.4 2.6 2.8 3.1 3.3 3.5 3.8 4.1 4.3
4.6
Quality Factor
- xn
MIL-SPEC Lower
Environment Factor
- x,
Environment GB GF GM
XE 1.o
6.0 12
5.0
NS
NU
16 6.0 8.0
7.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
9.0 24
.50
MF
ML
13 34 61 O
CL
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flIL-HDBK-217F
C H G NOTICE 2
9 9 9 9 9 7 0 0197056 826
MIL-HDBK-217F NOTICE 2
11.1
MIL-T-27
Grade
Insulation Family
Class
G4
O
576
Case
Symbol
O1 through 09,
through 50 53
37 through 4 1
Audio Transformer: 10 through 21, Pulse Transformer: 22 through 36,54
4
Grade
Insulation
X1 1OOBCOOl
Class
MIL-T-55631. The Transformers are Designated with the following Types, Grades and Classes.
Type I Type II Type 111 Grade 1 Grade2
Intermediate Frequency Transformer Radio Frequency Transformer Discriminator Transformer For Use When immersion and Moisture Resistance Tests are Required For Use When Moisture Resistance Test is Required For Use in Sealed Assemblies 85C Maximum Operating Temperature 105C Maximum Operating Temperature 125% Maximum Operating Temperature > 125C Maximum Operating Temperature
The class denotes the maximum operating temperature (temperature rise plus maximum ambient temperature).
11-2
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MIL-HDBK-217F
CHG N O T I C E 2
MIL-HDBK-217F NOTICE 2
11.2
INDUCTIVE DEVICES,
COILS
STYLE
RF Variable, and Fixed Variable, and Fixed RF, Chip Molded, RF, Est. Rel.
'P=',
Base Failure Rate- &
T Q E
n: Failures/106 Hours
Quality Factor - XQ Quality
"Q
.03
Fixed Inductor
or Choke
.O00030
S
R
.1o .30
1.o 1.o
P Temperature Factor THs(C) 20 30 40 50 60 70 80 90 1O0 110 120 130 140 150 160 170 180 190 "T .93 1.1 1.2 1.4 1.6 1.8 1.9 2.2
2.4
MIL-SPEC
Lower
3.0
Environment GB GF GM
"E
1 .o
6.0 12
3.8
4.1 4.3 4.6
AUC *UF
ARW
7.0
9.0
24 .50 13 34 61 O
SF
MF ML CL
THs
11-3
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
NS NI I
5.0
16 6.0
AIF
8.0
MIL-HDBK-217F NOTICE 2
11.3
INDUCTIVE DEVICES, DETERMINATION
Hot Spot temperaturecan be estimated as follows: THS = TA + 1.1 (AT) where: THS = TA = AT = HotSpotTemperature("C) InductiveDeviceAmbientOperatingTemperature("C) AverageTemperatureRiseAboveAmbient("C)
AT can either be determined bythe appropriate "Temperature Rise" Test Method paragraph in thedevice base specification (e.g., paragraph 4.8.12 for MIL-T-27E), or byapproximation using one of the procedures described below. For space environments a dedicated thermal analysis should be performed.
AT Approximation (Non-space Envir Iments) Information Known 1. MIL-C-39010 Slash Sheet Number MIL-C-39010/1C-3C, 5C, 7C, 9A, 10A, 13,14 MIL-C-39010/4C, 6C, 8A, 11, 12
2.
AT Approximation
AT = 15C
Power Loss Case Radiating Surface Area Power Loss Transformer Weight Input Power Transformer Weight (Assumes 80% Efficiency) Power Loss (W)
3.
4.
WL A Wt. W,
= = = =
RadiatingSurfaceArea ofCase (in2).See below forMiL-T-27CaseAreas Transformer Weight (Ibs.) Input Power (W)
NOTE: Methods are listedin preferred order(Le., most to least accurate). MIL-C-39010 are microminiature deviceswith surface areas less than 1 in2. Equations 2-4 are applicableto devices with surface areas from 3 in2 to 150 in2. Do not includethe mounting surface when determining radiating surface area.
Case AF AG AH AJ EB EA FB FA
MIL-T-27 Case Radiatinc Areas (Excludes Mounting Surface) Case Case Area (in2) Area (in2) 4 GB 33 7 LA 43 GA 11 HB MB 42 MA 18 HA 53 NB 21 58 JB 71 NA 23 JA KB 72 OA 25 KA 31 84
11-4
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F
CHG N O T I C E 2
9999970 0397059 5 3 5
MIL-HDBK-217F NOTICE 2
12.1
The following failure-rate model applies to motors with power ratings below one horsepower. This model is applicable to polyphase, capacitor start and run and shaded pole motors. It's application may be extended to other types of fractional horsepower motors utilizing rolling elementgrease packed bearings. The model is dictated by two failure modes, bearing failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and replaced and are not a failure mode. Typical applications include fans and blowers as well as various other motor applications. The model is based on References 4 and 37, which contain a more comprehensive treatment of motor life , prediction methods. The references should be reviewed when bearing loads exceed 10 percent of rated load, speeds exceed 24,000rpm or motor loads include motor speed slip of greater than 25 percent. The instantaneous failure rates, or hazard rates, experienced by motors are not constant but increase with time. The failure rate model in this section is an average failure rate for the motor operating over time period ' 7". This time period is either the system design life cycle (LC) or the time period the motor must last between complete refurbishment (or replacement). The model assumes that motors are replaced upon failure and that an effective constant failure rate is achieved after a given time due to the fact that the effective "time zero" of replaced motors becomes random after a significant portion of the population is replaced. The average failure rate, A , can be treated as a constant failure rate and P added to other part failure rates from this Handbook.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
1P = AUB hl
[-
Hours
- a~ and aw
aB (Hr.) e+05 22000 14000 91O0 61O0 e+04
aB (Hr.1
3600 70 13000 39000 78000 80000 55000 35000 7.56+03
TAaw (HI.) 6.48+06 3.28+06 1.6e+06 8.9e+05 5.08+05 4200 2900 2.98+05 1.8e+05 21 1500
aw
1.1
W.)
20 30 40 50 60
O0
aB
clw
aB aw
=
=
E
10
- 1.831
eristic Life for the Motor Bearing
Weibull Charact
Weibull Characteristic Life for the Motor Windings Ambient Temperature ("C)
TA
NOTE: See page 12-3 for method to calculate aB and a , , , ,when temperatureis not constant.
MIL-HDBK-217F NOTICE 2
12.1
I
1.9
h, and Determination
hl
Or
h2
o - .10
.11 - -20 .21 - .30
.13 .15
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.23
Example Calculation
.31 - .40 .41 - .50 .51 - .60 .61 - .70 .71 - .80
.31
.4 1 .51 .6 1 .68 .76 1 .o
A general purpose electrical motor is operating at 50C in a system witha 10 year design life(87600 hours) expectancy,
aB
=
55000 Hrs.
2.9e
aW =
"
+ 5 Hrs.
=
LC "B
1.6
.81 - .90
z 1.0
"
LC
"W
.3
hl
1.0
E=
1.6)
I
I
h2
A
= =
%=
hp
1.0 [(1.9)(55000)
=
(1.1)(2.9e + 5)
12-2
Document provided by IHS.
MIL-HDBK-217F NOTICE 2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
12.1
aCalculation for Cycled Temperature The following equation can be used to calculate a weighted characteristic life for both bearings and windings (e.g., for bearings substituteaB for all a's in equation). hl
+
a
h2
h3 +-""-h,
a= h2 hl
a
-+
-+
h -3 + "3
"""_
hm am
where:
a
=
= = = =
either aB or aw TimeatTemperature Tl Time to Cycle From Temperature Tl to T3 TimeatTemperatureT3 TimeatTemperatureTm Bearing (or Winding) Life atTl Bearing (or Winding) Life at T2 T1 + T 3 T3 2
hl h2 h3 hm
al =
a2
NOTE:
T2 =
, T4 =
12-3
MIL-HDBK-217F
CHG N O T I C E 2
MIL-HDBK-217F NOTICE 2
12.2
AND RESOLVERS
DESCRIPTION Rotating Synchrosand Resolvers
%=b
IC
S N E
n x Failures/106Hours
NOTE: Synchros and resolvers are predominately used in service requiring only slowand infrequent motion. so that the electrical failure mode dominates, and no Mechanical wearout problems are infrequent in the model above. mechanical mode failure rate is required
b
30 35 40 45 50 55 60 65 70 75 80 .O083 .O088 .O095 .o1 o .o1 1 .O1 3 .O32 .O41
.O52
110 115 120 125 .O69 ,094 .13 .19 .29 .45 .74 1.3 8.5
.O14 .O16
.o1 9 .o22 .O27
Environment
TE
1.o
\
TF
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
GB
GF GM NS NU AIC AIF AUC AUF ARW SF
2.0 12
7. O
18
4.0
6.0
16
25 26
xS Size 10-16
1.5
Size 18 or 1
1.5
.50
14 36 680
MF ML CL
2.25
12-4
Document provided by IHS.
~~
7 9 9 9 9 7 0 0197063 T b b
h, = hbynEFailures/l O6 Hours
Base Failure Rate- A ,+ . Environment Factor - nCE
Type
Environment
I
I
E
1 .o 2.0 12
2o
30
80
7.0
18
5.0
Temperature Stress Factor - CT Operating T (OC)/Rated T (c) 8.0
16
o to
.5
25
26
.a
1 .o
.8
1.0
.50
14
38 NIA
12-5
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F NOTICE 2
13.1 SPECIFICATION MIL-R-5757 MIL-R-83516 MIL-R-6106 MIL-R-83520 MIL-R-83536 MIL-R-13718 MIL-R-83725 MIL-R-19648 MIL-R-19523 MIL-R-83726 (Except Class MIL-R-39016 RELAYS, MECHANICAL
Relay
DESCRIPTION Mechanical
C, Solid State
Type)
P '
= 'bxLKC"CYC
850C1
Resistive
2.72 9.49 1.O6 1.28 1.76 2.72 4.77 9.49 21.4 1.28
54.6
.o059
.O067 .O075 .O084 .O094 .o1 o .o12 .O13 .O14 .O1 6 .O1 7 .o1 9 .o21 .O066 .O073 .O081 .O089 .O098 .o1 1 .o12 .O13 .O14 .O15 .O17 .O18 .o19 .o2 1 .o22 .O24 .O26 .O27 .O29 1 1
.05
2.
nL = exp
(3)
1.
l,,
.O059 exp
2. l , ,= .O059exp
TA
=
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
( (
For single devices which switch two different load types, evaluate nL for each possible stress load type nL). combination and use the worse case (largest Cycling Factor - xcYc Cycle Rate (Cycles per MIL-SPEC Hour)
2 1.0
z ] ) z ] )
Rate
1
xcYc
1.o0 1.50 DPST 1.75 2.00 3PST 2.50 3.00 DPDT 4.25 3PDT
5.50 8.00
10 10 1000
basic design limitationsof the relay are not valid. Design specifications should be consulted prior to evaluation of %YC
13-1
MIL-HDBK-217F NOTICE 2
13.1
RELAYS, MECHANICAL
Quality Factor - 7 c C
Quality
R P X
.1o
.3O
.45
U
M L MIL-SPEC, Non-Est. Rel. Commercial
L
.60
1 .o 1.5 1.5 2.9
- "F APlplication and Construction Factor Application Construction Contact Rating T V De Type Dry Circuit Armature (Long) Signal Dry Reed Current Mercury Wetted (Low mv Magnetic Latching and ma) Balanced Armature Solenoid 1 0-5 Amp Armature (Long) 1 General Armature Purpose
Sensitive
(O 100 mw)
Short)
=F
GM
AIC
7.0
9.0 11 12
46
AIF
AUC
AUF ARW
5-20 Amp
SF MF ML CI
.50
Thermal Time Delay Electronic Time Delay, Non-Thermal Latching, Reed Dry Magnetic Wetted Mercury armature Balanced High Voltage 20 (Glass) Vacuum (Ceramic) Vacuum Medium Armature (Long and Power Short) Wetted Mercury Latching Magnetic Mechanical Latching 2 Balanced Armature
Solenoid
10 5
5 5
3
1 2
3
2
25
66
N/A
25-600 Amp
13-2
Document provided by IHS.
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13-2 of Revision F
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Armature (Long and Short) Mercury Wetted Magnetic Latching Movement Meter Balanced Armature
7 3
1O0
MIL-HDBK-217F
CHG NOTICE 2
7999970 OL970bb 7 7 5
MIL-HDBK-217F NOTICE 2
13.2
RELAYS, SOLID STATE AND TIME DELAY DESCRIPTION Relay, Solid State Relay, Time Delay, Hybrid and Solid State
of solid state (and solid state time delay) relays is to sum The most accurate method for predicting the failure rate the failure rates for the individual components which makeup the relay. The individual component failure rates can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or from the Parts Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has about the components being used. If insufficient information is available, the following default model can be used:
hp
Base Failure RateType Relay Solid State Solid State Time Delay Hybrid
hh
.O29 .O29 .O29
Environment GB GF GM
1.o
3.0 12 6.0 17 12
19
NS
NU
AIC
Quality Factor- zQ
"0
21 32 23
.40
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
1.o
1.9
12 33 590
13-3
MIL-HDBK-ZL7F
CHG N O T I C E 2
m 9999770
Ol1970b7 bDL
MIL-HDBK-217F NOTICE 2
14.1
SWITCHES
'P='b Base Failure Rate- 2 Description Centrifugal Dual-In-line Package Limit Liquid Level Microwave (Waveguide) Pressure Pushbutton Reed Rocker Rotary Spec. M IL-SNIA 83504 8805 21 277 N/A 8932 9395 121 1 8805 22885 2431 7 55433 3950 22885 3786 13623 15291 15743 22604 2271O 45885 82359 8805 13484 2261 4 12285 24286 2271 O 3950 5594 8805 8834 941 9 13735 81551 83731
X X
L C
IC 7[:
E Failures/106 Hours
Load Stress Factor Stress S 0.05 o. 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.o
S=
Ab (F/106 Hrs.)
3.4 .o0012 4.3 2.3 1.7 2.8 .1o .o010 .O23 .11
Resistive 1.o0 1 .o2 1.O6 1.28 1.48 1.76 2.1 5 2.72 3.55
Load Type Inductive 1.o2 1.O6 1.28 1.76 1.15 2.72 4.77 9.49 21.4
p
L
XL
xL
NOTE: When the switch is rated by inductive load, then use resistive xI . .49 .O31 -18 .1o Contact Configuration Factor' - X## of Contacts,
NC 1 2 2 3 4 4 6 8 12
KC = (NC). 33
Applies to toggle and pushbutton switches only, all others use xC = 1.
Supersedes page
Document provided by IHS.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
14-1
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MIL-HDBK-ZL7F C H G N O T I C E 2
MIL-HDBK-217F NOTICE 2
14.1
9 9 9 9 9 7 0 OL970b8 5 4 8
SWITCHES
Quality Factor - xQ
Environment
XQ
Quality MIL-SPEC
Environment GB GF
1 .o
1 2
Lower
3.0
18
I I
GM NS NU
8.0
29
AIC
10
18
AIF
AUC AUF
13
22
46
ARW
SF
.50
25
MF
ML
67
1200
CL
14-2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F NOTICE 2
14.2
DESCRIPTION Circuit Breakers, Manual and Automatic Circuit Breakers, Magnetic, Unsealed, Trip-Free Circuit Breakers, Remote Control, Thermal, Trip-Free Circuit Breakers, Magnetic,Low Power, Sealed, Trip-Free Service Circuit Breakers, Molded Case, Branch Circuit and Service
Quality Factor- ~n
b
.34 .34 .34
I
Quality
nQ
1.o
MIL-SPEC Lower
I
Environment Factor- 7 t r
L
8*4
2.0
15
8.0
27
7.0
9.0
11
Use
Not Used as a Power On/Off Switch
I
1.o
I
2.5
12
46
50
25
66
ML CL
NIA
14-3
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MIL-HDBK-217F CHG N O T I C E 2
9 9 9 9 9 7 0 0377070 176
MIL-HDBK-217F NOTICE 2
15.1
CONNECTORS, GENERAL
3 L p = hb~TnKnQnE Failuredl O6
Hours
APPLICATION NOTE: The failure rate model is for a mated pair of connectors. It is sometimes desirable to assign half of the overall mated pair connector (Le., single connector) failure rate to the line replaceable unit and half to the chassis (or backplane). An example of when this would be beneficial is for input to maintainability prediction to allow a failure rate weighted repair time to be estimated for both the LRU and chassis. This f the connector are substantially accounting procedure could be significant if repair times for the two halves o different. For a single connector divide A,, by two.
Base Failure Rate- h . U Specification Description MIL-CCircular/Cylindrical 501 5 26482 26500 27599 28840 29600 38999 83723 3151 1 Card Edge (PCB)* Hexagonal Rack and Panel
Temperature Factor- nT
To (C)
nT
.o01 o
21 097 55302 24055 24056 243 08 2873 1 28748 835 15 21617 24308 28748 28804 81 659 835 1 3 83527 83733 85028 3607 3643 3650 3655 15370 25516 26637 39012 55235 8351 7 55074 22992 491 42
Rectangular
.O46
RF Coaxial
.O0041
20 30 40 50 60 70 80 90 1O0 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250
.9 1 1.1 1.3 1.5 1.8 2.0 2.3 2.7 3.0 3.4 3.7 4.1 4.6 5.0 5.5 6.0 6.5 7.0 7.5 8.1 8.6 9.2 9.8 1o.
15-1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F NOTICE 2
15.1
CONNECTORS, GENERAL
Lower
AT AT AT AT AT AT AT AT AT
= 3.256 (i).85 = 2.856 (i) .85 = 2.286 (i) = 1.345(i) = 0.989 (i) = 0.640 (i) .85 = 0.429 (i) .85 = 0.274 = 0.100 (i) .85
32 Gauge Contacts 30 Gauge Contacts 28 Gauge Contacts 24 Gauge Contacts 22 Gauge Contacts 20 Gauge Contacts 18 Gauge Contacts 16 Gauge Contacts 12 Gauge Contacts
- nE
XE 1 .o
1 .o 8.0 5.0 13
AT = i =
*IC
RF Coaxial Connectors
3.0
5.0
AIF
AU c
AU F
8.0
12 19 .50 10 27 490
ARW
SF
MF ML CL
15-2
Document provided by IHS.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
DefauIlt Insert Temperature Rise lation Amperes ict Gau(L PerContact 20 16 30 1 2 2 10 2 8 5 3 22 4 4 0 37 13 5 5 56 13 19 8 6 18 27 79 7 23 10 36 8 30 13 46 9 57 37 16 45 19 10 70 15 96 41 70 20 25 106 30 35 40
12 -O
1 1 2 3 4 5 6 7 15 26 39 54 72 92
- zK
IFK
O to .O5
> .O5 to .5 > .5 to 5 > 5 to 50
~~
MIL-HDBK-217F
CHG N O T I C E 2
MIL-HDBK-217F NOTICE 2
15.2
CONNECTORS, SOCKETS
'P=%
Base Failure Rate- Ilt, Description Dual-ln-Line Package Single-ln-Line Package Chip Carrier Pin Grid Array Relay Transistor Electron Tube, CRT Spec. MIL-S
83734 83734
5~ IC
'b
.O0064 .O0064 .O0064 .O0064 .O37
Active Contacts
1 2 3 4 5 6
Active Contacts
55 60 65 70 75 80 85 90 95 1O0 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180
nP
6.9 7.4 7.9 8.4 8.9 9.4 9.9 10 11 12 12 13 13 14 14 15 16 16
38533
NIA
12883
7
8 9 10 11 12 13 14 15 16 17 18 19 20 25 30 35 40 45 50
12883 12883
.O051
.o1 1
17
18 18 19 20 20 21 22
q
N
.39
An active contactis the conductive element which mateswith another elementfor the purpose of transferring electrical energy.
15-3
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F NOTICE 2
16.1
kp = hb[N1
N2 (xc
13)
Failures/106 Hours
APPLICATION NOTE: This model applies to board configurations with leaded devices mounted into the plated through holes and assumesfailures are predominately defect related. For boards using surface mount technology, use Section 16.2. For a mix of leaded devices mounted into plated through holes and surface 16.2 for the surface mountcontribution. mount devices, usethis model for the leaded devices and use Section A discrete wiring assembly with electroless deposit plated through holes i s basically a pattern of insulated wires laid down on an adhesive coated substrate. The primary cause of failure for both printed wiring and discrete wiring assemblies is associated with plated through-hole (PTH) problems (e.g., barrel cracking). Base Failure Rate hb Technology
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.
-
Quality MIL-SPEC or Comparable Institute for Interconnecting, and Packaging Electronic Circuits (!PC) Standards (IPC Level3) Lower
1
Discrete Wiring with Electroless .o001 1 Deposited PTH(2 2 Levels of Circuitry) Number of PTHs Factor N1 and N2 Factor
N1
Quantity Automated Techniques: Quantity of Wave Infrared (IR) or Vapor Phase Soldered Functional PTHs Quantity of Hand Soldered PTHs Complexity Factor - "C Environment Factor Environment GB GF GM
NS
"E
1 .o
N2
2.0
7.0
1 .o
"C 1 1.3 1.6 1.8 2.0 2.2 2.4 2.6 2.8 2.9 3.1 3.3 3.4 3.6 3.7
5.0
13
5.0
8.0
16
28
19
*RW
SF MF ML
.50
10 27
500
3.9
4.0
CL
2SP118
16-1
MIL-HDBK-217F
CHG N O T I C E 2
MIL-HDBK-217F NOTICE 2
16.2
INTERCONNECTIONASSEMBLIES,SURFACEMOUNTTECHNOLOGY
APPLICATION NOTE: The SMT Model was developed to assess the life integrityof leadless and leaded devices. It provides a relative measure of circuit card wearout due to thermal cycling fatigue failure of the "weakest link SMT device. An analysis should be performed on all circuit board SMT components. The component with the largest failure rate value (weakest link) is assessed as the overall board failure rate due to SMT. The model assumes the board is completely renewed upon failure of the weakest link and the results do not consider solder or lead manufacturing defects. This model is based on thetechniques developed in Reference 37.
Temperature cycling rate in cycles per calendar hour. Base on a thermal analysis of the circuit board. Use table default values if other estimates do not exist. Average number of thermal cycles to failure
Nf
ECF
of
where: d
=
Distance from center of device to the furthest solder joint in mils (thousandths of an inch) Solder joint height mils in for leadless devices. Default to h = 8 for all leaded configurations. Circuit board substrate thermal coefficient of expansion(TCE) Use environment temperature extreme difference Package material thermal coefficient of expansion (TCE) Temperature rise due dissipation (Pd)
=
.13 .15
as
AT
.23 1 .3
.41 .5 1
=
I
LC
WC
Design life cycle of the equipment in which the circuit board is operating. The Weibull characteristic life. C~SMT is a function of device and substrate material, themanufacturing methods, and the application environment used.
TRISE =
to power
Pd
8JC
eJCP
~ S M T=
P
nLC =
= =
16-2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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VIL-HDBK-217F
CHG NOTICE 2
9 9 9 7 9 7 0 0397075 788
MIL-HDBK-217F NOTICE 2
16.2
INTERCONNECTIONASSEMBLIES,SURFACEMOUNTTECHNOLOGY
CR - Cycling Rate Defat Values Number o f Equipment Type Cycles/Hour 1.o Automotive .O8 Consumer (television, radio, recorder) .17 Computer Telecommunications .O042 Commercial Aircraft .25 .o21 Industrial .O3 Military Ground Applications .12 Military Aircraft (Cargo) .5 Military Aircraft (Fighter) "LC
"LC 1 150
5,000
1
I
-Material
Plastic Ceramic
7
6
AT - Use Environment Default Temperature Difference AT Environment 7 GB GF GM NS NU AIC AIF AUC AUF ARW SF MF ML CL
F R 4 Laminate F R 4 Multilayer Board FR-4 Multilayer Board w/Copper Clad Invar Ceramic Multilayer Board Copper Clad Invar Copper Clad Molybdenum Carbon-Fiber/Epoxy Composite Kevlar Fiber Quartz Fiber Glass Fiber Epoxy/Glass Laminate Polyamide/Glass Laminate Polyamide/Kevlar Laminate PolyamidelQuartz Laminate Epoxy/Kevlar Laminate Alumina (Ceramic) Epoxy Aramid Fiber Polyamide Aramid Fiber Epoxy-Quartz Fiberglass Teflon Laminates Porcelainized Copper Clad Invar Fiberglass Ceramic Fiber
18 20 11
7
5 5
1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
3
1
5 15 13 6
8
7 7
6 9
20
7
7
2 1 26
26 61 31 31 57
57
31
EXAMPLE: A large plastic encapsulated leadless chip carrier is mounted on a epoxyglass printed wiring assembly. The design considerations are: a square package is 1480 mils on a side, solder height is 5 mils, power is dissipationis .5 watts,thermalresistance 20C/watt, the design life is 20 years and environment is military ground application. The failure rate developed is the impact of SMTfor a single circuit board and accounts for all SMT devices on this board. This failure rate is added to the sum of all of the component failure rates on the circuit board.
N/A N/A
MT
aSMT
aSMT
ECF
N/A
Nf CR
New Page
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16-3
flIL-HDBK-237F
CHG N O T I C E 2
9999970 039307b b 3 4
MIL-HDBK-217F NOTICE 2
16.2
= 5 mils
W C = 7 (Table - Plastic)
TRISE = 8JcP = 20(.5) = 10C
~ L= C1 (Table - Leadless)
For nLC:
For CR:
- Military Ground)
Nf
"
LC
%MT
F)
629,767 hrs.
= .28
ECF
=
=
MT
h s
ECF
= ~
16-4
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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NIL-HDBK-217F
CHG N O T I C E 2
MIL-HDBK-217F NOTICE 2
17.1
CONNECTIONS
APPLICATION NOTE: The failure rate model in this section applies to connections used on all assemblies except those using plated through holes or surface mount technology. Use the Interconnection Assembly Model in Section 16 to account for connections to a circuit board using either plated through hole technology or surface mount technology. The failure rate of the structure which supports the connections and parts, e.g., non-plated-through hole boards and terminal straps, is considered to be zero. Solderless wrap connections are characterized by solid wire wrapped under tension arounda post, whereas hand soldering with wrapping does not depend on a tension induced connection. The following model is for a single connection.
3p = %xE
Base Failure Rate- L U Connection Type Hand Solder, w/o Wrapping Hand Solder, w/Wrapping Crimp Weld Solderless Wrap Clip Termination Reflow Solder Spring Contact Terminal Block
Failures/l O6 Hours
Environment Factor- x ,
+, (FAO6 hrs)
.O013
.O00070
.O00015
.O000068
.o001 2
.O00069
.17
.O62
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.O0026
NIL-HDBK-ZL7F
RE
m 9999970 O070860 8 m
MIL-HDBK-217F
18.1
METERS, PANEL
X P % AXF X Q
Ease Failure Rate L
I
I
I
All
Quality
MIL-"10304
"O
I
Application Factor
.o90
I
1
1 .o
Lower
3.4
I
I
- ..
XA
1 .o 1.7
I
"E 1 .o 4.0 25 12
35
28
GF GM NS
Function Factor xc
I
I
*F 1.o 1.o
2.8
~~ ~
NU AIC
Al F
42
58
73 60 1.1
60
NIA NIA
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.
. .
.
~
.
. .. .
.
..
"
"
- .
'
MIL-HDBK-237F
RE
9999970 0070863
m
~~
MIL-HDBK-217F
19.1 SPECIFICATION MIL-C-3098 DESCRIPTION Crystal Units, Quartz
QUARTZ CRYSTALS
'P = 'b Q E
Base Failure Frequency, f(MHz)
x Failures/106 Hours
Environment Factor zE
"b
.o1 1 .O13 .o19 .o22 ,024 .O26 .O27 .O28 ,029
Environment GB . GF
"E 1 .o 3 .O
10
GM
NS
r
6.0 16
12
NU
.O30
.O31 ,032 ,033 .O33 .O34 .O35 .O35 .O36 .O36 .O37 .O37 .O37 ,038
_ .
17
22
28 23
.50
13
32
. .
CL
500
hb =
.013(f)*23
Quality Factor zQ
Xn
19-1
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NIL-HDBK-ZL7F R E
9999970 0070862
MIL-HDBK-217F
DESCRIPTION
APPLICATION NOTE: The data used to develop this model included randomly occurring catastrophic failures to tungsten filament wearout. and failures due
Environment Factor K,
Ah
Voltage, Rated
V, (Volts)
5 6 12 14 24
28 37.5
I I ::: II
59
.75 1.8 .
5.4
leu
0.10
0.10 to 0.90
> 0.90 .
0.72
. 1.0
I
1 .o
3.3
20-1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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.
'
..
..
MIL-HDBK-217F
RE
9 9 9 9 9 7 0 0070863 3 E
MIL-HDBK-217F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
2 1.1
DESCRIPTION Filters, Radio Frequency Interference Filters, High Pass, Low Pass, Band Pass, Band Suppression, and Dual Functioning (Non-tunable)
to estimate the failure rate for electronic filters is to sum the failure rates for the individual The most accurate way components which makeup the filter (e.g., IC's, diodes, resistors, etc.) using the appropriate models provided in this Handbook. The Parts Stress models or the Parts Count method given in Appendix A can be used to determine individual component failure rates. If insufficient information is. available then the following default model canbe used.
A,, =
Base Failure Rate At, TY Pe MIL-F-15733, Ceramic-Ferrite Construction (StylesF i 10-16, 22, 24, 30-32, 34,35, 38, 41-43, 45, 47-50, 61-65, 70, 81-93, 95, 96) MIL-F-15733, Discrete LC Componentsi (Styles FL 37, 53, 74)
,
XQ
XE FailuresUO6 Hours
c c . Environment Factor - 7
I :
'b
Environment.
"E
,022
9.0
11
13 11 .80
7.0
Quality Factor- Z n Quality MIL-SPEC Lower 15 120
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7777778 0870Bb4 5
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MIL-HDBK-217F
22.1
FUSES
DESCRIPTION Fuse, Cartridge Class H Fuse, Cartridge, High Interrupting Capacity Fuse, Current Limiter Type, Aircraft Fuse, Instrument Type Fuse, Instrument, Power and Telephone (Nonindicating), Style F01
hp
+, ICEFailures/106 Hours
APPLICATION NOTE: The reliability modeling of fusespresentsauniqueproblem.Unlikemostother components, there is very little correlation between the numberof fuse replacements and actual fuse failures. Generally whena fuse opens, or blows, something elsein the circuithas created-anoverload conditionand the fuse is simply functioning as designed. This model is based on life test data and represents fuse open and A short failure mode is most commonly shorting failure modes due primarily to mechanical fatigue and corrosion. caused by electrically conductive material shorting the fuse terminals together causing a to failure open condition when rated current is exceeded.
Environment Factor- xE
I
I
Environment GB GF
I
I
I
GM NS NU AIC
AlF
11
9.0
12
a
15 18 16
.9o
10 21 230
22-1
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--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MISCELLANEOUS
PARTS
h,-. Failure
P
Rates for Miscellaneous Parts (Failures/lO6 Hours) Failure Rate Part Type 15 20 40
Vibrators (MIL-V-95) 60-cycle 120-cycle 400-cycle Lamps Neon Lamps Fiber Optic Cables (Single Fiber Types Only) Single Fiber Optic Connectors' Microwave Elements (Coaxial &Waveguide) Attenuators (Fixed& Variable) Fixed Elements (Directional Couplers, Fixed Stubs & Cavities)
& Cavities) Variable Elements (Tuned Stubs
0.20
0.1 (Per Fiber Km) 0.10
-
Microwave Ferrite Devices OOW) Isolators & Circulators (51 Isolators & Circulators (>1 OOW) Phase Shifter (Latching) Dummy Loads < 1oow 1oow to I 1ooow > 1ooow -Terminations (Thin or Thick Film Loads Used in Stripline and Thin Film Circuits) 'Caution: Excessive Mating-Demating Cycles May Seriously Degrade Reliability
0.030
X
ZE
0.030X "E
23-1
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MISCELLANEOUS PARTS
Environment Factor
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- IC,
L
"E
1 .o 2.0 10
GB
GF GM
5.0.
12
NS
5.0
'
NU
*IC
17
5.0
6.0
8.0
14
22
.
8.0
7.0
11 17
AlF
AUC
AUF
ARW
SF MF ML
-
25
.50
9.0
24
.50
.
14
36
450
CL
660 .
23-2
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APPENDIX A: PARTS COUNT RELIABILITY PREDICTION
Parts Count Reliability Prediction This prediction method is applicable during bid proposal and early design phases when insufficient information is available to use the part stress analysis models shown in the main bodyof this Handbook. The information needed to apply the method is (1) generic part types (including complexity for microcircuits) and quantities, (2) pait quality levels, and (3)equipment environment. The equipment failure rate is obtained by looking up a generic failure rate in one of the following tables, multiplyingit by a quality factor, and then summing it with failure rates obtainedfor other components in the equipment. The general mathematical expression for equipment failure rate with this method is:
Equation 1 for a given equipment environment where:
hEQUIP =
hg
=
Totalequipmentfailurerate(Failures/106Hours) Generic failure rate for the i th generic part (FailuredlO6 Hours) Quality factor for the i th generic pari Quantity of
"Q
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Ni n
= =
i th generic part
pari categories in the equipment
Equation 1 applies if the entire equipment is being used in one environment. If the equipment comprises several units operating in different environments (such as avionics systems with units in airborne inhabited (Al) and uninhabited (AU) environments), then Equation 1 should be applied to the portions of the equipment in each environment. These "environment-equipment" failure rates should be added to determine total equipment failure rate. Environmental symbols are defined in Section 3. The quality factors to be usedwith each part type are shown with the applicable hgtables andare not necessarily the same values that are used in the Part Stress Analysis. Microcircuits have an additional multiplying factor, xL, which accounts for the maturity of the manufacturing process. For devices in production two years or more, no modification is needed. For those in production less than two years, h 9 should be multiplied by the appropriate 5tL factor (See page A-4).
It should be noted that no generic failure rates are shown for hybrid microcircuits. Each hybrid is a fairly uniquedevice. Sincenone of thesedevices have beenstandardized, their complexitycannot be determined from their name or function. Identically or similarly named hybrids can have a wide range of complexity that thwarts categorization for purposes of this prediction method. If hybrids are anticipated for a design, their use and construction should be thoroughly investigated on an individual basis with application of the prediction modelin Section 5.
The failure rates shown in this Appendix were calculated by assigning model default values to the failure rate models of Section 5 through 23. The specific defauR values used for the model parameters are shown with theh Tables for microcircuits. Default parameters for all other part classes are summarized in 9 the tables starting on Page A-12. For partswith characteristics which differ significantly from the assumed defaults, or parts used in large quantities, the underlying models in the main body of this Handbook can be used.
A-1
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APPENDIX A:
(
PARTS COUNT
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APPENDIX A:
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A-6
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MIL-HDBK-217F NOTICE 2
APPENDIX A: PAR' 5 COUNT
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MIL-HDBK-217F NOTICE 2
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A-1 3
MIL-HDBK-217F
APPENDIX B:
' a ,
CMOS-(DETAILED MODELL
This appendix contains the detailed version of the VHSICNLSI CMOS model containedin Section 5.3. It is provided to allow more detailed device level design trade-offs to be accomplished for predominate failure modes and mechanisms exhibited in CMOS devices. Reference30 should be consulted for a detailed derivation of this model.
VHSICNHSIC-I IKF FAll URF RATF MODFL
+.. &TCt)
b N ( t ) + &Ac + k m + hls(t)
Predicted Failure Rate as a Function o f Time Oxide Failure Rate *Metallization Failure Rate
Hot Carrier Failure Rate
ATYPEo~
.77 for Custom and Logic Devices, 1.23 for Memories and Gate Arrays
B- 1
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.21 cm2 Oxide Defect Density (If unknown, use where X . = 2 prn and X, is the feature size of the device)
gJ
-
..
1 Defect/cm2
Effective Screening Time (Actual Time of Test (in I O 6 hrs.)) (ATox (at junction screening temp.) (in OK))*
ATOX
exp
-.3
8 . 6 1 7 ~ 1 0 (L ~ TJ
k)]
+~ J C P (in
OK))
EOX
- 21 .5)
/
Maximum Power Supply Voltage VDD, divided by the gate oxide thickness (in MV/cm)
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APPENDIX B: VHSICIVHSIC-LIKE AND VLSl CMOS (DETAILED MODEL)
2 Total Chip Area (in cm ) .88 for Custom and Logic Device;, 1,12 2 -21 cm X0 Metal Defect Density (If unknown use (-)
XS
(in 106 hrs.) (in OK)) 6 . (ActualScreeningTime (in 10hrs)) (in lo6 hrs.)
(QML)
3 8 8 (Metal Type) J2 A
TMET
(QML) = . 2 if on QML, .5 if not. Metal Type = 1 for AI, 37.5 for AI-CU or for Al-Si-Cu The mean absolute value of Metal Current Density (in 1O6 Amps/cm2) sigma obtained from test data on electromigration failures from the same or a similar process. If this data isnot available usedMET = 1. time (in lo6 hrs.)
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I
APPENDIX B:
MIL-HDBK-217F
VHSIC-VHSIC-LIKE AND VLSl CMOS (DETAILED MODEL)
.O39
8.61 7x1O'5
=
( 1 TJ
k)]
(where TJ = T ~ eJ$ +
(in OK))
Id
'sub
Drain Current at Operating Temperature. Substrate Current at Operating Temperature. -0058 e -*o0689TJ (in OK) (mA) 'sub = sigmaderivedfromtestdata, (at Screening Temp.(in
If unknown use
%c
=
=
if not availableuse 1.
OK))
t0
* (Test Duration
in lo6 hours)
.hcoN
.O00022 e
-.O028 to
ATCON
-.O028
1 0
Effective Screening Time ATcon (at screening junction temperature (in O K ) ) (actual screening timein lo6 hrs.)
=
=
B-4
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=
=
+ %H
xE
ZQ
Type
Package DIP Pin Grid Array' Chip Carrier (Surface Mount Technology)
=PT
I
-
-exp
tapH '399 H; [
5230 + (1-DC)(RH) whereTJ =Tc (WRH) e (for example,for 50% Relative Humidity, use RH = 50) .74 time (in lo6 hrs.)
(k
e)]
+ eJCP (in
OK)
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APPENDIX B: VHSIC-VHSIC-LIKE AND VLSl CMOS (DETAILED MODEL)
kOS
=
.
-.O002 VTH
VTH = ESD Threshold of the device using a100 pF, 1500 ohm discharge model
exp[
-.423
where TJ = Tc + eJ$ to =
=
(in O K )
Effective Screening Time ATMls (at Scleening Temp, (in time (in lo6 hrs.)
OK))
6-6
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B W
MIL-HDBK-217F
APPENDIX C :
Publications listed with "AD" numbers may be obtained from: National Technical Information Service 5285 Port Royal Road Springfield, VA22151 (703) 487-4650 BIBLIOGRAPHY
z r .
"L": These documents are in a Documents with AD number prefix with the letter "B" or with the suffix "Limited Distribution" category. Contact the Defense Technical Information Center for ordering procedures.
Copies of MIL-STDS's, MIL-HDBKs, and specifications are available from: Standardization Document Order Desk 700 Robins Ave. Building 4, Section D Philadelphia, PA 191 11-5094 (215) 697-2667 The year of publication of the Rome Laboratory (RL) (formerly Rome Air Development Center (RADC)) documents is part of the RADC (or RL) number; e.g., RADC-TR-88-97 was published in 1988. 1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
2. "Reliability Model for Miniature Blower Motors Per MIL-8-23071 B," RADC-TR-75-178, AD A013735. 3. "High Power Microwave Tube Reliability Study," FAA-RD-76-172, AD A003361 2. ADA050179.
4."ElectricMotorReliabilityModel,"RADC-TR-77-408,
5.
'
"Development of Nonelectronic Part Cyclic Failure Rates," RADC-Tk-77-417, AD A050678. This study developed new failure rate models for relays, switches, and connectors.
6.
"Passive Device Failure Rate Models for MIL-HDBK-2178," RADC-TR-77-432, AD A050180. This study developed new failure rate models for resistors, capacitors and inductive devices.
7.
Y
"Quantification of Printed Circuit Board Connector Reliability," RADC-TR-77-433, AD A049980. "CrimpConnectionReliability,"RADC-TR-78-15,ADA050505 "LSI/Microprocessor Reliability Prediction Model Development," RADC-TR-79-97, AD AO689
"A Redundancy Notebook," RADC-TR-77-287, AD A050837. li.
8.
P.
9. 1O .
11. "Revision
c-1
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12. 13.
"Traveling Wave Tube Failure Rates," RADC-TR-80-288, AD A096055. "Reliability Prediction Modeling of New Devices," RADC-TR-80-237,AD A090029. This study-developed failure rate models for magnetic bubble memories and charge-coupled memories.
14. "Failure Rates for Fiber Optic Assemblies," RADC-TR-80-322, AD A09231 5. 15. "Printed Wiring Assembly and Interconnection Reliability," RADC-TR-81-318, AD A l 11214.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
for printed wiring assemblies, solderless wrap This study developed failure rate models assemblies, wrapped and soldered assemblies and discrete wiring assemblies with electroless deposited plated through holes.
"Avionic Environmental Factors for MIL-HDBK-217," RADC-TR-81-374, AD B064430L. "RADC Thermal Guide for Reliability Engineers," RADC-TR-82-172, A AD l 18839. "Reliability Modelingof Critical Electronic Devices," RADC-TR-83-108, AD A l 35705. This report developed failure rate prediction procedures for magnetrons, vidicions, cathode ray tubes, semiconductor lasers, helium-cadmium lasers, helium-neon lasers, Nd: YAG lasers, electronic filters, solid state relays, time delay relays (electronic hybrid), circuit breakers, LC. Sockets, thumbwheel switches, electromagnetic meters, fuses, crystals, incandescent lamps, neon glow lamps and surface acoustic wave devices.
19.
20.
21
"Reliability Prediction for Spacecraft," RADC-TR-85-229, AD A149551. This study.investigated the reliability performance histories of 300 Satellite vehicles and the is basisfor the halvingof all model nEfactors for MIL-HDBK-217E to MIL-HDKBPl7E, Notice 1.
"Surface Mount Technology: A Reliability Review," 1986, Available from Reliability Analysis Center, PO Box 4700, Rome, NY 13440-8200, 800-526-4802. "Thermal Resistances of Joint Army Navy (JAN) Certified Microcircuit Packages," RADC-TR-86-97, AD B108417. "Large Scale Memory Error Detection and Correction," RADC-TR-87-92, AD B117765L.
to calculate memory system reliability for memories This study developed models incorporating error detecting and correcting codes. For a summary of the study see 1989 IEEE Reliability and Maintainability Symposium Proceedings, page 197, "Accounting Soft for Errors in Memory Reliability Prediction."
25. "Reliability Analysisof a Surface Mounted Package Using Finite Element Simulation," RADC-TR-87177, AD A189488.
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APPENDIX C:
26.
BIBLIOGRAPHY
"VHSICImpact on System Reliability," RADC-TR-88-13,AD8122629. "Reliability Assessment of Surface Mount Technology," RADC-TR-88-72, AD A193759. for Discrete Semiconductor Devices," RADC-TR-88-97, AD
27.
This study developed new failure rate prediction models for GaAs Power FETS, Transient Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator Diodes. 29. 30. "Impact of Fiber Optics A201 946. on System Reliability and Maintainability," RADC-TR-88-124, AD
in MIL-HDBK-217F, Section
31.
"Reliability Assessment Using Finite Element Techniques," RADC-TR-89-281 , AD A216907. This study addresses surface mounted solder interconnections and microwire board's platedthrough-hole (PTH) connections. The report givesadetailedaccountofthefactors to be considered when performing an FEA and the procedure used to transfer the results to a reliability figure-of-merit.
32.
"Reliability Analysis/Assessment of Advanced Technologies," RADC-TR-90-72, ADA 223647. This study provides the basis for the revised microcircuit models (except VHSIC and Bubble Memories) appearing in MIL-HDBK-217F, Section 5.
"Improved Reliability PredictionModel for Field-AccessMagneticBubbleDevices,"AFWAL-TR81 -1052. "Reliability/Design Thermal Applications," MIL-HDBK-251 "NASA Parts Application Handbook," MIL-HDBK-978-B (NASA). This handbook is a five volume series which discusses afull range of electrical, electronic and electromechanical component parts. It provides extensive detailed technical information for eachcomponent part such as: definitions, construction details, operating characteristics, parts, environmental derating, failure mechanisms, screening techniques, standard considerations, and circuit application. "NonelectronicParts Reliability Data1991 ," NPRD-91. This report contains field failure rate data on a variety of electrical, mechanical, electromechanicalandmicrowavepartsandassemblies(1400 different part types). It is available fromtheReliability Analysis Center, PO Box 4700, Rome, NY 13440-8200, Phone: (315) 337-0900. "Reliability Assessment of Critical ElectronicComponents,"RL-TR-92-197,AD-A256996. This study is the basis for new or revised failure rate models in MIL-HDBK-217F, Notice 2, for the following device categories: resistors, capacitors, transformers, coils, motors, relays, switches, circuit breakers,connectors,printed circuitboardsandsurface mount technology.
36.
37.
page Supersedes
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MIL-HDBK-217F NOTICE 2
APPENDIX
C:
BIBLIOGRAPHY
38.
"Handbook of Reliability Prediction ProceduresforMechanicalEquipment,"NSWC-94/L07. ThisHandbookincludes a methodology for nineteenbasicmechanicalcomponentsfor evaluating a design for R&M that considers the material properties, operating environment and critical failure modes. It is available from the Carderock Division, Naval Surface Warfare Center, Bethesda,MD20084-5000,Phone(301)227-1694.
Custodians: Army - CR Navy - EC Air Force - 17 Review Activities: Army - MI, AV, ER Navy - SH, AS, OS Air Force - 11, 13, 15, 19, 99 User Activities: Army AT, ME, GL Navy - CG, MC, YD, TD Air Force - 85
ProjectNo.RELI-O074
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