Академический Документы
Профессиональный Документы
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Objectives
The object of this program is to study the conversion limits when converting solar energy into electricity. It is also involved in identifying mechanisms which could drastically improve the present performance of this conversion.
The development of a general theory of intermediate band cells The intermediate band solar cell is a new type of solar cell that has been proposed and patented by our group and is based on the potential that for photovoltaic conversion would have a material with semiconductor properties, but exhibiting an intermediate band within what in ordinary semiconductors would constitute the energy gap (Fig. 1). The efficiency limit of the new type of solar cell is 63.2 % (which must be compared with the efficiency limit of a single gap solar cell at 40.7 % and 55.4 % of the tandem of two solar cells). The higher power comes, on the one hand, from the capacity of the cell to absorb the low-energy photons and convert them into current on producing the absorbed photon transitions from the valence band to the intermediate and from the intermediate to the conduction bands. On the other hand, from its capacity to carry out this process without voltage degradation, which is limited by the large gaps and not by the small ones as represented in a simplified form in Fig. 2 illustrating the relationship between the voltage and the quasi-Fermi level separation.
Fig. 2. Plan which illustrates how, in an intermediate band solar cell, the voltage is limited by the total gap of the structure and not by the smallest gaps. The discontinuous lines represent the quasiFermi level splitting. The bibliography on this subject is: A.Luque and A.Mart, "A Metallic Intermediate Band High Efficiency Solar Cell", Progress in Photovoltaics, Research and Applications, V.9. N.2, pp. 73-86 (2001). L.Cuadra, A.Mart and A.Luque, "Modelling of the Intermediate Band Width in the Quantum Dot Intermediate Band Solar Cell", Proc. of the Conferencia de Dispositivos Electrnicos (Conference on Electronic Devices), 2001 p.193-196, Dep. Legal GR-133/2001, Impresin Plcido Cuadros. Gonzalo Callas 13, Granada. L.Cuadra, A.Mart and A.Luque, "Theory of the Absorption Coefficients in the Intermediate Band Solar Cell", Proc. of the Conferencia de Dispositivos Electrnicos (Conference on Electronic Devices), 2001 p.197-200, Dep. Legal GR-133/2001, Impresin Plcido Cuadros. Gonzalo Callas 13, Granada. A.Luque, A.Mart and L.Cuadra, "High Efficiency Solar Cell with Metallic Intermediate Band", Proc. of the 16th European Photovoltaic Solar Energy Conference, James & James Ltd. London, pp. 59-61 (2000). L.Cuadra, A.Mart and A.Luque, "Modelling of the Absorption Coefficient of the Intermediate Band Solar Cell", Proc. of the 16th European Photovoltaic Solar Energy Conference, James & James Ltd. London, pp. 15-21 (2000). L.Cuadra, A.Mart A.Luque,"Influencia del solapamiento de los coeficientes de absorcin de la clula solar de banda intermedia" (The influence of the overlapping of the absorption coefficients of the intermediate band solar cell), Proc. of the XV Simposium Nacional de la Unin Cientfica Internacional de Radio - URSI, ISBN: 84-600-9597-5, pp. 553-554 (2000). A.Luque and A.Mart, "Increasing the Efficiency of Ideal Solar Cells By Photon Induced Transitions at Intermediate Levels", Physical Review Letters V.78, N.26 p.5014-5017 (1997).
Identification of materials with the potential for exhibiting an intermediate band When transferring the concept of an intermediate band solar cell into practise, the first problem that arises is how to create this material. In this respect, one of the strategies that we follow consists of the identification of crystalline structures that, with its constituent atoms, of the right type and suitably situated in the network, exhibit the aforementioned intermediate band in its band diagram. As well as this, in order that this band is half full of electrons, the Fermi level must be found within this band. A number of structures have been identified that exhibit this property, like for example, one based on a compound of GaAs and Ti. Its band diagram is calculated as shown in Fig. 3. In order to determine these band diagrams, complex methods of calculation are used whose details can be found in the bibliography found at the end of this section. We still do not know, however, whether these compounds are stable or how they can be synthesised practically. P.Wahnn, C.Tablero, "Ab-Initio electronic Structure Calculations for Metallic Intermediate Band Formation in Photovoltaic Materials", Physical Review B, 65, 165115,1-10 (2002). C.Tablero, P.Wahnon, L.Cuadra, A.Mart, J.Fernndez, A.Luque, "Efficiencies of Half-filled Intermediate Band Solar Cell Designed by First Principles Calculations" Proc. 17th European PVSC, James&James, London, p. 296-299, (2002).
Fig. 3. Ga4As3Ti
band diagram calculates assuming that some Ti atoms replace the As ones in the GaAs crystalline network.
Implementation of the intermediate band cell based on quantum dot technology We have also speculated on the possibility of synthesising the intermediate band material based on quantum dot engineering. With this method, the intermediate band would come about from the energy levels corresponding to the electrons confined in the dots as detailed in Fig. 4. In order to produce the aforementioned cell, the matrix of points still has to be situated between the two layers, known as emitters, of ordinary semiconductors as shown in the outline in Fig. 5. As well as this, in order that the intermediate band can be half full of electrons, it is necessary to introduce doping (usually n type). Recently, in collaboration with the University of Glasgow and the company, Compound Semiconductor Technologies, the first prototypes of these cells have been produced (Fig. 6) which have exhibited an efficiency of 12 %. The bibliography on this subject related to us is:
A.Luque, A.Mart, P.Wahnn, L.Cuadra, C.Tablero, C.Stanley, A.McKee, D.Zhou, R.Knenkamp, R.Bayn, A.Belaidi, J.Alonso, J.Ruiz, J.Fernndez, P.Palacios, N.Lpez
, "Progress towards the practical implementation of the Intermediate Band Solar Cell" 29th IEEE PVSC, New Orleans 2002. A.Mart, L.Cuadra and A.Luque, "Quasi Drift-Diffusion Model for the Quantum Dot Intermediate Band Solar Cell", IEEE Trans. on Elec. Dev. Vol. 49, N.9, pp. 1632-1639 (2002). A.Mart, L.Cuadra and A.Luque, "Partial Filling of a Quantum Dot Intermediate Band for Solar Cells", IEEE Trans. on Elec. Dev. V.48, N.10, pp. 2394-2399, 2001. A.Mart, L.Cuadra and A.Luque, "Analysis of the space charge region of the quantum dot intermediate band solar cell" Photovoltaics for the 21st Century, Proc de la 199th Electrochemical Society Meeting, The Electrochemical Society, Pennington, pp. 46-60, 2001 L. Cuadra, A. Mart, A. Luque,C. R. Stanley, Andrew McKee "Strain Considerations for the Design of the Quantum Dot Intermediate Band Solar Cell in the InxGa1-xAs/AlyGa1-yAs Material System" Proc. 17th European PVSC, James&James, London, p. 98-101, 2001. L.Cuadra, A.Mart and A.Luque, "Modelling of the Intermediate Band Width in the Quantum Dot Intermediate Band Solar Cell", Proc. of the Conferencia de Dispositivos Electrnicos (Conference on Electronic Devices), 2001 p.193-196, Dep. Legal GR-133/2001, Impresin Plcido Cuadros. Gonzalo Callas 13, Granada A.Mart, L.Cuadra and A.Luque, "Quantum Dot Intermediate Band Solar Cell", Proc. of the 28th Photovoltaics Specialist Conference, IEEE New York, p. 940-943, 2000. L.Cuadra, A.Mart and A.Luque, "Tecnologa de Puntos Cunticos para la Obtencin de un Semiconductor de Banda Intermedia" (Quantum Point Technologies in order to Obtain an Intermediate Band Semiconductor), Proc. of the XV Simposium Nacional de la Unin Cientfica Internacional de Radio (XV National Symposium of the International Radio Scientific Union) - URSI, ISBN: 84-600-9597-5, pp. 555-556, 2000. A.Mart, L.Cuadra, A.Luque, Quantum Dot Super Solar Cell, Actas de la Conferencia sobre Dispositivos Electrnicos 1999 (Conference on Electronic Devices), Madrid, ISBN: 84:0007819-5, p. 363-366,1999.
Fig. 4. Plan
that illustrates conceptually how the intermediate band comes about from a matrix of quantum dots.
Fig. 5. Outline
Photograph of one of the first intermediate band, quantum dot solar cells produced within the European MIBCELL project.
Fig. 6.
(Updated 02/10/2002)