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MCC 200 MCD 200

Thyristor Modules

ITRMS = 2x340 A ITAVM = 2x196 A VRRM = 1400-1800 V


6 7 5 4

VRSM VDSM V

VRRM VDRM V

Type MCC

6 7 1

5 4 2 1

3 2

1500 1400 MCC 200-14io1 MCD 200-14io1 1700 1600 MCC 200-16io1 MCD 200-16io1 1900 1800 MCC 200-18io1 MCD 200-18io1

5 4 2

MCD

Symbol ITRMS / IFRMS ITAVM / IFAVM ITSM / IFSM

Conditions TVJ = TVJM TC = 90C; 180 sine TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

Maximum Ratings 340 196 216 8000 8600 7000 7500 320 000 311 000 245 000 236 000 100 A A A A A A A A2s A2s A2s A2s A/s

Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits

i2dt

TVJ = 45C; VR = 0 TVJ = TVJM; VR = 0

(di/dt)cr

TVJ = TVJM; repetitive; IT = 500 A f = 50Hz; tP = 200s; VD = 2/3 VDRM; IG = 0.5 A; diG/dt = 0.5 A/s non repetitive; IT = 500 A

500 1000 120 60 20 10 -40...+125 125 -40...+125

A/s V/s W W W V C C C V~ V~

(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight

TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM; tP = 30 s IT = ITAVM; tP = 500 s

50/60 Hz, RMS; IISOL 1 mA;

t = 1 min t=1s

3000 3600

Mounting torque (M6) Terminal connection torque (M6) Typical including screws

2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 125 g

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

2004 IXYS All rights reserved

1-3

448

MCC 200 MCD 200


Symbol IRRM, IDRM VT / VF VT0 rT VGT IGT VGD IGD IL Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 200 A; TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM Characteristic Values 15 1.20 0.8 1.0 2 3 150 220 0.25 10 200 mA V V m V V mA mA V mA mA
0.1 10-3 1 1 6 3 2 5 4 VG V 10 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C

IGD, TVJ = 130C

4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 100 101 IG A 102

TVJ = 25C; tP = 30 s; VD = 6 V IG = 0.5 A; diG/dt = 0.5 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = VDRM IG = 0.5 A; diG/dt = 0.5 A/s TVJ = TVJM; IT = 300 A, tP = 200 s; -di/dt = 10 A/s typ. VR = 100 V; dv/dt = 50 V/s; VD = 2/3 VDRM TVJ = TVJM; IT = 300 A, -di/dt = 50 A/s per thyristor; DC current per module per thyristor; DC current per module Creepage distance on surface Strike distance through air Maximum allowable acceleration

10-2

10-1

Fig. 1 Gate trigger characteristics 150 2 200 550 235 0.13 0.065 0.18 0.09 12.7 9.6 50 mA s
tgd 100 TVJ = 25C

IH tgd tq QS IRM RthJC RthJH dS dA a

s C A

s typ. limit

10

K/W K/W K/W K/W mm mm m/s2

1 0.01 0.1 1 IG A 10

Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Dimensions in mm (1 mm = 0.0394")
500 A IT , IF 400

Fig. 2 Gate trigger delay time

300

200 TVJ = 125C 100 TVJ = 25C 0 0.0 0.4 0.8 1.2 1.6 V 2.0 VT, VF

Fig. 3 Forward current versus voltage drop

IXYS reserves the right to change limits, test conditions and dimensions

2004 IXYS All rights reserved

2-3

448

MCC 200 MCD 200


8000 A 50 Hz 80 % VRRM TVJ = 45C TVJ = 125C

106 I dt A2s
2

400 ITAVM A IFAVM 300 TVJ = 45C TVJ = 125C DC 180 sin 120 60 30

6000 ITSM IFSM 4000

105

200

2000

100

0 0.001

104
0.01 0.1 s t 1

0 1 t ms 10 0 25 50 75 100 125 C 150 TC

Fig. 4 Surge overload current ITSM / FSM: Crest value, t: duration


400 Ptot W

Fig. 5 2dt versus time (1-10 ms)

Fig. 6 Maximum forward current at case temperature

2100 W RthKA K/W 1800 Ptot 1500 1200 900 Circuit 600 300 0 0 100 200 A 300 ITRMS/IFRMS 0 25 50 75 100 125 TA C 150 0 200 400 A 600 0 IdAVM 25 50 75 100 125 TA B6 RthKA K/W

300

200 DC 180 sin 120 60 30

0.1 0.2 0.3 0.4 0.6 0.8 1.0

0.03 0.04 0.06 0.08 0.1 0.15 0.2

100

C 150

Fig. 7 Power dissipation versus on-state current and ambient temperature (per thyristor or diode)
0.30 K/W ZthJC 0.25 30 0.20 60 0.15 120 180 DC

Fig. 8

3~ rectifier bridge: Power dissipation versus direct output current and ambient temperature

Constants for ZthJC calculation (DC): i 1 2 3 4 5


s t 102

Rthi (K/W) 0.01 0.0065 0.025 0.0615 0.027

ti (s) 0.00014 0.019 0.18 0.52 1.6

0.10

0.05

0.00 10-3

10-2

10-1

100

101

Fig. 9 Transient thermal impedance junction to case at various condition angles (per thyristor or diode)
IXYS reserves the right to change limits, test conditions and dimensions
448

2004 IXYS All rights reserved

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