TIP140/141/142

TIP140/141/142
Monolithic Construction With Built In BaseEmitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145/146/147
1

TO-3P

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : TIP140 : TIP141 : TIP142 Value 60 80 100 60 80 100 5 10 15 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W C C

1.Base 2.Collector 3.Emitter

Equivalent Circuit C

VCEO

Collector-Emitter Voltage : TIP140 : TIP141 : TIP142 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC TJ TSTG

R1

R2 E

R 1 8k R 2 0.12 k

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP140 : TIP141 : TIP142 Collector Cut-off Current : TIP140 : TIP141 : TIP142 ICBO Collector Cut-off Current : TIP140 : TIP141 : TIP142 IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Delay Time Rise Time Storage Time Fall Time VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 10A IC = 5A, IB = 10mA IC = 10A, IB = 40mA IC = 10A, IB = 40mA VCE = 4V, IC = 10A VCC = 30V, IC = 5A IB1 = 20mA, IB2 = -20mA RL = 6 0.15 0.55 2.5 2.5 1000 500 2 3 3.5 3 V V V V s s s s
Rev. A, February 2000

Test Condition IC = 30mA, IB = 0

Min. 60 80 100

Typ.

Max.

Units V V V

ICEO

VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0

2 2 2 1 1 1 2

mA mA mA mA mA mA mA

2000 Fairchild Semiconductor International

TIP140/141/142

Typical Characteristics

10

IB = 2000uA
9

IB =

1200

IC[A], COLLECTOR CURRENT

IB = 1800uA
8 7 6 5 4

0u 100 IB =

uA

100k

IB = 800uA IB = 600uA

V CE = 4V

IB = 1600uA IB = 1400uA

IB = 400uA

hFE, DC CURRENT GAIN

10k

1k

IB = 200uA
3 2 1 0 0 1 2 3 4 5

100

10 0.1

10

100

V CE[V], COLLECTOR-EMITTER VOLTAGE

IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10

1000

IC =500IB

f=0.1MHz

V BE(sat)
1

V CE(sat)

Cob[pF], CAPACITANCE
10 100

100

0.1

0.01 0.1

10 1 1 10 100 1000

IC[A], COLLECTOR CURRENT

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

100

150

IC[A], COLLECTOR CURRENT

125

PC[W], POWER DISSIPATION

10

100

D C

75

50

TIP140 TIP141 TIP142

25

0.1 1 10 100 1000

0 0 25 50
o

75

100

125

150

175

V CE [V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2000 Fairchild Semiconductor International

Rev. A, February 2000

TIP140/141/142

Package Demensions

TO-3P
15.60 0.20
3.80 0.20

13.60 0.20 3.20 0.10 9.60 0.20

4.80 0.20 1.50 0.05

+0.15

12.76 0.20

19.90 0.20

16.50 0.30

3.00 0.20 1.00 0.20

3.50 0.20

2.00 0.20

13.90 0.20

23.40 0.20

18.70 0.20

1.40 0.20

5.45TYP [5.45 0.30]

5.45TYP [5.45 0.30]

0.60 0.05

+0.15

Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2000 Fairchild Semiconductor International

Rev. E

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