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Power Transistors

2SC5127, 2SC5127A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.60.2 3.20.1 9.90.3 2.90.2

s Features
q q q q

4.10.2 8.00.2 Solder Dip

High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C)
Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150 55 to +150 Unit V

15.00.3

3.00.2

Parameter Collector to base voltage Collector to 2SC5127 2SC5127A 2SC5127

Symbol VCBO VCES VCEO VEBO ICP IC IB

13.70.2

+0.5

s Absolute Maximum Ratings

1.20.15 1.450.15 0.750.1 2.540.2 5.080.4

2.60.1 0.70.1

emitter voltage 2SC5127A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature

V V V A A A W C C

1 2 3

1:Base 2:Collector 3:Emitter TO220E Full Pack Package

PC Tj Tstg

s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC5127 2SC5127A

(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.6A IC = 0.6A, IB = 0.17A IC = 0.6A, IB = 0.17A VCE = 10V, IC = 0.1A, f = 1MHz IC = 0.6A, IB1 = 0.17A, IB2 = 0.34A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s min typ max 100 100 100 Unit A A V

Power Transistors
PC Ta
40 1.2 (1) TC=Ta (2) With a 100 100 2mm Al heat sink (3) With a 50 50 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C IB=150mA 1.0

2SC5127/2SC5127A
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 25C 0.3 TC=100C 0.1 25C 0.03 0.01 0.01 0.03

VCE(sat) IC

Collector power dissipation PC (W)

30 (1)

Collector current IC (A)

100mA 0.8 80mA 60mA 0.6 40mA

20

0.4

20mA 10mA

10

(2) (3) (4)

0.2

0 0 20 40 60 80 100 120 140 160

0 0 2 4 6 8 10 12

0.1

0.3

10

Ambient temperature Ta (C)

Collector to emitter voltage VCE (V)

Collector current IC (A)

VBE(sat) IC
100

hFE IC
Collector output capacitance Cob (pF)
IC/IB=5 1000 VCE=5V 1000

Cob VCB
IE=0 f=1MHz TC=25C

Base to emitter saturation voltage VBE(sat) (V)

30

Forward current transfer ratio hFE

300

300

10

100

100

3 TC=25C 1 100C 0.3 25C

30 25C

TC=100C

30

10

25C

10

0.1 0.01 0.03

0.1

0.3

10

1 0.01 0.03

1 0.1 0.3 1 3 10 1 3 10 30 100

Collector current IC (A)

Collector current IC (A)

Collector to base voltage VCB (V)

fT IC
100 VCE=10V f=1MHz TC=25C 100 30

ton, tstg, tf IC
Pulsed tw=1ms Duty cycle=1% IC/IB=3.5 (2IB1=IB2) VCC=200V TC=25C ton

Area of safe operation (ASO)


10 3 Non repetitive pulse TC=25C t=0.5ms 1 0.3 10ms 0.1 0.03 0.01 0.003 0.001 DC 1ms

Transition frequency fT (MHz)

Switching time ton,tstg,tf (s)

30

10 3 tstg 1 0.3

10

tf 0.1 0.03

0.3

0.1 0.01

0.01 0.03 0.1 0.3 1 0 0.5 1.0 1.5 2.0

Collector current IC (A)

10

30

100

300

1000

Collector current IC (A)

Collector current IC (A)

Collector to emitter voltage VCE (V)

Power Transistors
Area of safe operation, reverse bias ASO
4.0 3.5 Lcoil=180H IC/IB=5 (IB1=IB2) TC<100C

2SC5127/2SC5127A
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC

Collector current IC (A)

3.0 2.5 2.0 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 800

IB2

VCC

tW

Vclamp

Collector to emitter voltage VCE (V)

Rth(t) t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V 0.2A (2W) and without heat sink (2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink

Thermal resistance Rth(t) (C/W)

1000

100

(1)

10

(2)

0.1 104

103

102

101

10

102

103

104

Time t (s)