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Vishay Semiconductors
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
D Integrated gate protection diodes D High cross modulation performance D Low noise figure
3 4 2
94 9307 96 12647
BF961 Marking: BF961 Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
12623
Tamb 60 C
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BF961
Vishay Semiconductors Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, VG1S = VG2S = 4 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF961 BF961A BF961B Type Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS VG1S(OFF) VG2S(OFF) 4 4 9.5 Min 20 8 8 Typ Max Unit V V V nA nA mA mA mA V V
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain AGC range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss Gps DGps F Min 12 Typ 15 3.7 1.6 25 1.6 20 50 1.8 Max Unit mS pF pF fF pF dB dB dB
VG1S = 0, VG2S = 4 V
GS = 2 mS, GL = 0.5 mS, f = 200 MHz VG2S = 4 to 2 V, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz
2.5
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BF961
Vishay Semiconductors Typical Characteristics (Tamb = 25_C unless otherwise specified)
Y21S Forward Transadmittance ( mS ) 300 P tot Total Power Dissipation ( mW ) 250 200 150 100 50 0 0
96 12159
20
40
60
80
0 2.01.51.00.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VG1S Gate 1 Source Voltage ( V )
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 1.5 1.0 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VG1S Gate 1 Source Voltage ( V ) VDS=15V VG2S=4V f=1MHz
96 12163
VDS=15V IDS=10mA
VG1S=0.5V 0V
0.5V
6
96 12164
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BF961
Vishay Semiconductors
3.0 C oss Output Capacitance ( pF ) 2.5 2.0 1.5 1.0 0.5 0 0
96 12165
600MHz
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 Re (y21) ( mS )
f=700MHz 600MHz 500MHz 400MHz 300MHz 200MHz 100MHz 0.2 0.4 0.6 ID=20mA VDS=15V VG2S=4V ID=5...20mA f=50...700MHz 0.8 1.0 1.2 1.4
f=700MHz 600MHz 500MHz 400MHz 300MHz 200MHz 100MHz 1 2 3 4 5 VDS=15V VG2S=4V ID=5...20mA f=50...700MHz 6 7 8 9 10 Im ( y 22 ) ( mS )
ID=5mA
Re (y11) ( mS )
Re (y22) ( mS )
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BF961
Vishay Semiconductors VDS = 15 V, ID = 5 to 20 mA, VG2S = 4 V , Z0 = 50 S11
j 120 j0.5 j2 150 j0.2 j5 30 300
W
90 60
S12
0.2 0.5 1 2 5 700 MHz j0.5 500 300 j2 j
100
50
j0.2
j5 150 30
120
12 920 12 921
90
60
S21
120 90 60
S22
j j0.5 30 j0.2 700MHz 0.8 1.6 0 0 j5 j2
0.2 0.5 1 2 5 700 MHz j0.5 j2 j
100
150
j0.2
300 500
j5
120
12 922
90
60
12 923
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BF961
Vishay Semiconductors Dimensions in mm
96 12242
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BF961
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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